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1. 发明授权

US08097745B2 Method of producing organosilicon compound 有权
标题翻译：生产有机硅化合物的方法
公开(公告)号：US08097745B2
公开(公告)日：2012-01-17
申请号：US12749735
申请日：2010-03-30
申请人： Yohei Nobe , Kang-go Chung , Ryuichi Saito
发明人： Yohei Nobe , Kang-go Chung , Ryuichi Saito
IPC分类号： C07F7/18
CPC分类号： C07F7/188 , C07F7/1876
摘要： A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.
摘要翻译：公开了制备式R 2n（OR 4）m Si-R 1 -Si（OR 4）m R 2n的有机硅化合物的简单方法。该方法包括以下两个步骤：Y-R1-Y + SiXm + 1R2n-> R2nXmSi-R1-SiXmR2n R2nXmSi-R1-SiXmR2n + M（OR4）r - →R2n（OR4）mSi-R1-Si（OR4） mR2n在式中，R1是亚甲基，亚烷基或亚芳基，R2是烷基，烯基，炔基或芳基，m和n是0-3，如果m + n = 3，至少一个m是1或更大，Y 是卤素，X是氢或卤素，R4是烷基，烯基，炔基或芳基，M是金属，r是金属的价）。有机硅化合物用于形成具有优异的耐热性，耐化学性，导电性和弹性模量的膜。

2. 发明申请

US20110042789A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM 审中-公开
标题翻译：化学气相沉积材料，含硅绝缘膜及含硅绝缘膜的生产方法
公开(公告)号：US20110042789A1
公开(公告)日：2011-02-24
申请号：US12934806
申请日：2009-03-24
申请人： Hisashi Nakagawa , Yohei Nobe , Kang-go Chung , Ryuichi Saito , Terukazu Kokubo
发明人： Hisashi Nakagawa , Yohei Nobe , Kang-go Chung , Ryuichi Saito , Terukazu Kokubo
IPC分类号： H01L21/31 , H01L23/28 , C07F7/08
CPC分类号： C23C16/401 , C07F7/1804 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/31633 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1). wherein R1 and R2 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R3 and R4 individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.
摘要翻译：化学气相沉积材料包括由以下通式（1）表示的有机硅烷化合物。其中R1和R2各自表示氢原子，具有1至4个碳原子的烷基，乙烯基或苯基，R 3和R 4各自表示具有1至4个碳原子的烷基，乙酰基或苯基，m为0〜2的整数，n为1〜3的整数。

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