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1. 发明授权

US08097745B2 Method of producing organosilicon compound 有权
标题翻译：生产有机硅化合物的方法
公开(公告)号：US08097745B2
公开(公告)日：2012-01-17
申请号：US12749735
申请日：2010-03-30
申请人： Yohei Nobe , Kang-go Chung , Ryuichi Saito
发明人： Yohei Nobe , Kang-go Chung , Ryuichi Saito
IPC分类号： C07F7/18
CPC分类号： C07F7/188 , C07F7/1876
摘要： A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.
摘要翻译：公开了制备式R 2n（OR 4）m Si-R 1 -Si（OR 4）m R 2n的有机硅化合物的简单方法。该方法包括以下两个步骤：Y-R1-Y + SiXm + 1R2n-> R2nXmSi-R1-SiXmR2n R2nXmSi-R1-SiXmR2n + M（OR4）r - →R2n（OR4）mSi-R1-Si（OR4） mR2n在式中，R1是亚甲基，亚烷基或亚芳基，R2是烷基，烯基，炔基或芳基，m和n是0-3，如果m + n = 3，至少一个m是1或更大，Y 是卤素，X是氢或卤素，R4是烷基，烯基，炔基或芳基，M是金属，r是金属的价）。有机硅化合物用于形成具有优异的耐热性，耐化学性，导电性和弹性模量的膜。

2. 发明申请

US20110042789A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM 审中-公开
标题翻译：化学气相沉积材料，含硅绝缘膜及含硅绝缘膜的生产方法
公开(公告)号：US20110042789A1
公开(公告)日：2011-02-24
申请号：US12934806
申请日：2009-03-24
申请人： Hisashi Nakagawa , Yohei Nobe , Kang-go Chung , Ryuichi Saito , Terukazu Kokubo
发明人： Hisashi Nakagawa , Yohei Nobe , Kang-go Chung , Ryuichi Saito , Terukazu Kokubo
IPC分类号： H01L21/31 , H01L23/28 , C07F7/08
CPC分类号： C23C16/401 , C07F7/1804 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/31633 , H01L21/31695 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1). wherein R1 and R2 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R3 and R4 individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.
摘要翻译：化学气相沉积材料包括由以下通式（1）表示的有机硅烷化合物。其中R1和R2各自表示氢原子，具有1至4个碳原子的烷基，乙烯基或苯基，R 3和R 4各自表示具有1至4个碳原子的烷基，乙酰基或苯基，m为0〜2的整数，n为1〜3的整数。

3. 发明申请

US20120282414A1 RUTHENIUM FILM-FORMING MATERIAL AND RUTHENIUM FILM-FORMING METHOD 有权
标题翻译：形成薄膜的成膜材料和成膜方法
公开(公告)号：US20120282414A1
公开(公告)日：2012-11-08
申请号：US13503899
申请日：2010-10-20
申请人： Ryuichi Saito , Kang-go Chung , Hideki Nishimura , Tatsuya Sakai
发明人： Ryuichi Saito , Kang-go Chung , Hideki Nishimura , Tatsuya Sakai
IPC分类号： C07F15/00 , B05D3/02 , B05D3/06 , B05D7/24
CPC分类号： C23C16/18 , C07C49/92 , C07F15/0046 , H01L21/76843 , H01L28/65
摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).
摘要翻译：公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。

4. 发明授权

US08999442B2 Ruthenium film-forming material and ruthenium film-forming method 有权
标题翻译：钌成膜材料和钌膜形成方法
公开(公告)号：US08999442B2
公开(公告)日：2015-04-07
申请号：US13503899
申请日：2010-10-20
申请人： Ryuichi Saito , Kang-go Chung , Hideki Nishimura , Tatsuya Sakai
发明人： Ryuichi Saito , Kang-go Chung , Hideki Nishimura , Tatsuya Sakai
IPC分类号： B05D1/30 , B05D1/02 , B05D5/00 , B05D7/00 , B28B19/00 , B29B15/10 , C23C18/00 , C23C20/00 , C23C28/00 , C23C16/18 , C07C49/92 , C07F15/00 , C23C16/00 , H01L21/768 , H01L49/02
CPC分类号： C23C16/18 , C07C49/92 , C07F15/0046 , H01L21/76843 , H01L28/65
摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).
摘要翻译：公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。

5. 发明申请

US20140118934A1 Power Semiconductor Module and Power Converter Using the Same 有权
标题翻译：功率半导体模块和使用它的电源转换器
公开(公告)号：US20140118934A1
公开(公告)日：2014-05-01
申请号：US14126955
申请日：2012-06-15
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Tokihito Suwa
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Tokihito Suwa
IPC分类号： H05K7/20
CPC分类号： H05K7/2089 , H01L23/367 , H01L23/4334 , H01L23/473 , H01L24/33 , H01L25/115 , H01L25/18 , H01L2224/32245 , H01L2924/07802 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H02M7/003 , H05K7/1432 , H05K7/209 , H01L2924/00 , H01L2924/00012
摘要： A power semiconductor module includes a first package having an upper arm circuit section, a second package having a lower arm circuit section, a metal case having a storage space to store the first package and the second package and an opening connecting with the storage space, and an intermediate connecting conductor to couple the upper arm circuit section with the lower arm circuit section; the case includes a first radiating section and a second radiating section facing the first radiating section through the storage space; the first package is arranged so that the arrangement direction of the first and second packages may be parallel to the respective surfaces facing the first and second radiating sections; and the intermediate connecting conductor couples an emitter side terminal extending from the first package with a collector side terminal extending from the second package in the storage space.
摘要翻译：功率半导体模块包括具有上臂电路部分的第一封装，具有下臂电路部分的第二封装，具有存储第一封装和第二封装的存储空间的金属外壳以及与存储空间连接的开口，以及将上臂电路部分与下臂电路部分连接的中间连接导体; 壳体包括通过存储空间面向第一辐射部分的第一辐射部分和第二辐射部分; 第一包装被布置成使得第一和第二包装件的布置方向可以平行于面向第一和第二辐射部分的相应表面; 并且中间连接导体将从第一封装延伸的发射极侧端子与从存储空间中的第二封装延伸的集电极侧端子耦合。

6. 发明申请

US20120087095A1 Power Module and Power Conversion Device 有权
标题翻译：电源模块和电源转换装置
公开(公告)号：US20120087095A1
公开(公告)日：2012-04-12
申请号：US13266675
申请日：2010-04-16
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Hideaki Ishikawa
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Hideaki Ishikawa
IPC分类号： H05K7/20 , H05K5/04
CPC分类号： H01L23/467 , B60K1/02 , B60K6/365 , B60K6/445 , B60L3/003 , B60L11/123 , B60L11/14 , B60L2200/10 , B60L2200/26 , B60L2200/32 , B60L2200/36 , B60L2220/12 , B60L2220/14 , B60L2240/36 , B60L2240/525 , C25D11/08 , C25D11/10 , C25D11/12 , H01L23/367 , H01L23/433 , H01L23/473 , H01L24/33 , H01L25/072 , H01L2224/73265 , H01L2224/83101 , H01L2224/8384 , H01L2924/01327 , H01L2924/07802 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H02M7/003 , Y02T10/6217 , Y02T10/6239 , Y02T10/7077 , H01L2924/00
摘要： A power module according to the present invention includes: a semiconductor element for converting DC current to AC current by switching operation; an electrical wiring board to which the semiconductor element is electrically connected, with the semiconductor element being disposed upon one of its principal surfaces; an insulating resin layer provided on the other principal surface of the electrical wiring board; a first insulation layer that is disposed opposite from the electrical wiring board, separated by the insulating resin layer, and that is joined to the insulating resin layer; a second insulation layer that is disposed opposite from the insulating resin layer, separated by the first insulation layer, and that ensures electrical insulation of the semiconductor element; and a metallic heat dissipation member that is disposed opposite from the first insulation layer, separated by the second insulation layer, and that radiates heat generated by the semiconductor element via the electrical wiring board, the insulating resin layer, the first insulation layer, and the second insulation layer.
摘要翻译：根据本发明的电源模块包括：用于通过切换操作将DC电流转换成AC电流的半导体元件; 半导体元件电连接的电气布线板，半导体元件设置在其主表面之一上; 绝缘树脂层，设置在所述电气布线板的另一个主表面上; 第一绝缘层，与所述电布线板相对设置，由所述绝缘树脂层隔开，并且与所述绝缘树脂层接合; 第二绝缘层，与绝缘树脂层相对设置，由第一绝缘层隔开，并且确保半导体元件的电绝缘; 以及金属散热构件，其与所述第一绝缘层相对设置，由所述第二绝缘层隔开，并且经由所述电布线板，所述绝缘树脂层，所述第一绝缘层和所述第二绝缘层辐射由所述半导体元件产生的热量第二绝缘层。

7. 发明授权

US07978471B2 Electric power conversion apparatus 有权
标题翻译：电力转换装置
公开(公告)号：US07978471B2
公开(公告)日：2011-07-12
申请号：US12388910
申请日：2009-02-19
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Keisuke Horiuchi , Toshiya Satoh , Hideki Miyazaki
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Keisuke Horiuchi , Toshiya Satoh , Hideki Miyazaki
IPC分类号： H05K7/20
CPC分类号： H05K7/20927 , B60K6/26 , B60K6/28 , B60K6/46 , B60K17/16 , B60L11/1803 , B60L15/007 , B60L2210/40 , B60L2220/14 , B60L2240/429 , B60Y2200/92 , H01L23/3121 , H01L23/36 , H01L23/3675 , H01L23/473 , H01L23/492 , H01L23/49517 , H01L24/45 , H01L25/072 , H01L2224/40137 , H01L2924/00014 , H01L2924/0002 , H01L2924/1203 , H01L2924/13055 , H02M7/003 , H02M7/537 , H02P27/06 , H05K1/0262 , H05K7/2089 , Y10S903/906 , Y10S903/907 , Y10S903/909 , H01L2924/00 , H01L2224/45099
摘要： An electric power conversion apparatus includes: a channel case in which a cooling water channel is formed; a double side cooling semiconductor module that comprises an upper and lower arms series circuit of an inverter circuit; a capacitor module; a direct current connector; and an alternate current connector. The semiconductor module comprises a first and a second heat dissipation metals whose outer surfaces are heat dissipation surfaces, the upper and lower arms series circuit is disposed tightly between the first heat dissipation metal and the second heat dissipation metal, and the semiconductor module further comprises a direct current positive terminal, a direct current negative terminal, and an alternate current terminal which protrude to outside. The channel case is provided with the cooling water channel which extends from a cooling water inlet to a cooling water outlet, and a first opening which opens into the cooling water channel.
摘要翻译：电力转换装置包括：形成冷却水通道的通道壳体; 包括逆变器电路的上臂和下臂串联电路的双面冷却半导体模块; 电容器模块; 直流连接器; 和备用电流连接器。半导体模块包括第一和第二散热金属，其外表面是散热表面，上下臂串联电路紧密地设置在第一散热金属和第二散热金属之间，并且半导体模块还包括直流正极端子，直流负极端子和突出到外部的交流电流端子。通道壳体设置有从冷却水入口延伸到冷却水出口的冷却水通道以及通向冷却水通道的第一开口。

8. 发明授权

US07826196B2 Ceramic laminated device and method for manufacturing same 有权
标题翻译：陶瓷层压装置及其制造方法
公开(公告)号：US07826196B2
公开(公告)日：2010-11-02
申请号：US12161901
申请日：2007-03-06
申请人： Ryuichi Saito , Koichi Shigeno , Hiroshi Kagata
发明人： Ryuichi Saito , Koichi Shigeno , Hiroshi Kagata
IPC分类号： H01G4/06 , H01G4/005
CPC分类号： H05K1/0306 , H01G4/0085 , H01G4/129 , H01G4/30 , H03H7/0115 , H03H2001/0085 , H05K3/4611 , H05K3/4629 , Y10T29/435
摘要： The present invention relates to a ceramic laminated device including a dielectric ceramic and an Ag electrode. In a dielectric ceramic that can be sintered at low temperatures and has a high dielectric constant and Q value, reactivity between the ceramic and Ag during sintering is suppressed low and segregation of specific elements in the proximity of the electrode is controlled. Thus, a filter having a high Q value and low loss is produced stably. For this purpose, in a ceramic laminated body including at least a ceramic and a Si-containing glass, a ratio of A/B, i.e. a ratio of a Si element concentration (A) within a range at a distance of 5 μm or smaller from the Ag electrode to a Si element concentration (B) within a range at a distance larger than 5 μm from the Ag electrode, is set equal to or smaller than 2.
摘要翻译：本发明涉及包括电介质陶瓷和Ag电极的陶瓷层压装置。在可以在低温下烧结且具有高介电常数和Q值的电介质陶瓷中，抑制烧结期间陶瓷与Ag之间的反应性，并且控制电极附近的特定元素的偏析。因此，稳定地产生具有高Q值和低损耗的滤波器。为此，在至少包含陶瓷和含Si玻璃的陶瓷层叠体中，A / B的比率即Si元素浓度（A）在5μm以下的范围内的比例从Ag电极到距离Ag电极大于5μm的距离的范围内的Si元素浓度（B）被设定为2以下。

9. 发明授权

US07638904B2 Isolated bidirectional DC-DC converter 有权
标题翻译：隔离双向DC-DC转换器
公开(公告)号：US07638904B2
公开(公告)日：2009-12-29
申请号：US11206226
申请日：2005-08-18
申请人： Hiroyuki Shoji , Akihiko Kanouda , Ryuichi Saito , Seigou Yukutake , Katsuhiro Higuchi
发明人： Hiroyuki Shoji , Akihiko Kanouda , Ryuichi Saito , Seigou Yukutake , Katsuhiro Higuchi
IPC分类号： G01R1/20
CPC分类号： H02M1/34 , H02M3/33584 , H02M2001/342 , Y02B70/1491
摘要： The DC-DC converter connects a first and a second switching circuit for converting power mutually between direct current and alternating current respectively to a first DC power source and a second DC power source and has a transformer between the AC terminals thereof. Here, between the AC terminals of the second switching circuit and the negative pole terminal of the DC power source, a voltage clamp circuit composed of a series unit of switching devices with a reverse parallel diode and a clamp condenser is connected.An isolated bidirectional DC-DC converter which prevents a reduction in a circulating current at time of buck and an occurrence of a surge voltage at time of voltage boost and realizes highly efficiency, low noise, and miniaturization is provided.
摘要翻译： DC-DC转换器将用于将直流和交流之间的功率相互转换的第一和第二开关电路分别连接到第一直流电源和第二直流电源，并且在其AC端子之间具有变压器。这里，在第二开关电路的交流端子和直流电源的负极端子之间，连接由串联的具有反向并联二极管的开关器件和钳位电容器组成的电压钳位电路。提供一种隔离的双向DC-DC转换器，其防止降压时的循环电流的降低和在升压时的浪涌电压的发生，并且实现高效率，低噪声和小型化。

10. 发明授权

US07592886B2 Dielectric porcelain composition and high frequency device using the same 失效
标题翻译：介电瓷组成及使用高频装置
公开(公告)号：US07592886B2
公开(公告)日：2009-09-22
申请号：US11814946
申请日：2006-03-22
申请人： Ryuichi Saito , Hiroshi Kagata , Hidenori Katsumura , Muneyuki Sawada
发明人： Ryuichi Saito , Hiroshi Kagata , Hidenori Katsumura , Muneyuki Sawada
IPC分类号： C04B35/00 , H01P7/00
CPC分类号： H01G4/30 , C04B35/462 , C04B35/468 , C04B35/6262 , C04B2235/3203 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3281 , C04B2235/3284 , C04B2235/3287 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/36 , C04B2235/5445 , C04B2235/604 , C04B2235/656 , C04B2235/6567 , C04B2235/78 , C04B2235/96 , C04B2235/9623 , C04B2235/9669 , H01B3/12 , H01G4/1227
摘要： A dielectric porcelain composition of the present invention includes a first component and second component. If the first component is represented by the general formula of xBaO-yNd2O3-zTiO2-wBi2O3 (provided that x+y+z+w=100), x, y, z, and w satisfy 12≦x≦16, 12≦y≦16, 65≦z≦69, and 2≦w≦5, respectively. The second component includes 30 to 37 wt % of BaO, 33 to 46 wt % of SiO2, 8 to 12 wt % of La2O3, 3 to 7 wt % of Al2O3, 0 to 1 wt % of SrO, 0 to 10 wt % of Li2O, 0 to 20 wt % of ZnO, and 7 wt % or less of B203. The compounding ratio of the second component is between 10 wt % and 30 wt % when the sum of the first and second components is 100. In addition, 0.1 to 1 parts by weight of Li2O and 3 to 10 parts by weight of ZnO, relative to 100 parts by weight of the sum of the first and second components, is also contained as a third component. An average particle diameter of the dielectric mixed powder forming dielectric porcelain composition before firing is 0.9 μm or less.
摘要翻译：本发明的电介质瓷组合物包括第一组分和第二组分。如果第一组分由通式xBaO-yNd2O3-zTiO2-wBi2O3（条件是x + y + z + w = 100）表示，x，y，z和w满足12 <= x <= 16,12 <= y <= 16,65 <= z <= 69，2 <= w <= 5。第二组分包括30至37重量％的BaO，33至46重量％的SiO 2，8至12重量％的La 2 O 3，3至7重量％的Al 2 O 3，0至1重量％的SrO，0至10重量％的 Li 2 O，0〜20重量％的ZnO和7重量％以下的B 2 O 3。当第一和第二组分的总和为100时，第二组分的配合比例为10重量％至30重量％。此外，相对于0.1重量份的Li 2 O 3和10重量份的Li 2 O 3和10重量份至100重量份的第一和第二组分的总和也被包含为第三组分。烧成前的介电混合粉末形成介电瓷组合物的平均粒径为0.9μm以下。

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