专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110097830A1 SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体元件，其制造方法，液晶显示装置及其制造方法
公开(公告)号：US20110097830A1
公开(公告)日：2011-04-28
申请号：US12983336
申请日：2011-01-03
申请人： Yohei Kanno , Gen Fujii
发明人： Yohei Kanno , Gen Fujii
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/78603 , H01L29/78696
摘要： In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
摘要翻译：在常规TFT形成为具有反交错型的情况下，需要通过在形成岛状半导体区域中的曝光，显影和液滴放电来形成抗蚀剂掩模。这导致过程数量和材料数量的增加。根据本发明，由于在形成源极区域和漏极区域之后，由于作为沟道区域的部分被用作沟道保护膜的绝缘膜覆盖以形成岛状半导体膜，因此可以简化工艺，因此可以仅使用金属掩模而不使用抗蚀剂掩模来制造半导体元件。

2. 发明授权

US08518728B2 Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same 有权
标题翻译：半导体元件及其制造方法，液晶显示装置及其制造方法
公开(公告)号：US08518728B2
公开(公告)日：2013-08-27
申请号：US12983336
申请日：2011-01-03
申请人： Yohei Kanno , Gen Fujii
发明人： Yohei Kanno , Gen Fujii
IPC分类号： H01L21/00 , H01L21/84 , H01L51/40
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/78603 , H01L29/78696
摘要： In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
摘要翻译：在常规TFT形成为具有反交错型的情况下，需要通过在形成岛状半导体区域中的曝光，显影和液滴放电来形成抗蚀剂掩模。这导致过程数量和材料数量的增加。根据本发明，由于在形成源极区域和漏极区域之后，由于作为沟道区域的部分被用作沟道保护膜的绝缘膜覆盖以形成岛状半导体膜，因此可以简化工艺，因此可以仅使用金属掩模而不使用抗蚀剂掩模来制造半导体元件。

3. 发明授权

US07598129B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07598129B2
公开(公告)日：2009-10-06
申请号：US10576692
申请日：2004-11-05
申请人： Yohei Kanno , Gen Fujii
发明人： Yohei Kanno , Gen Fujii
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/66765 , H01L29/78696
摘要： Especially in case that a light-emitting element composed of layers containing organic compounds or inorganic compounds is driven by a thin film transistor (TFT), a structure having at least two transistors installed with a drive TFT is required to prevent irregularities of ON current of a switching TFT provided to a pixel region. Hence, the simplification of a semiconductor element structure and a process for manufacturing a semiconductor element becomes an urgent task as a large substrate is frequently used. According to the present invention, after that a source region and a drain region are formed, an insulating film serving as a channel protective film is formed to cover a portion for serving as a channel region, then, an island-like semiconductor film is formed. Accordingly, a semiconductor element can be manufactured by using only a metallic mask without forming a resist mask, and so the process can be simplified.
摘要翻译：特别是在由薄膜晶体管（TFT）驱动由含有有机化合物或无机化合物的层构成的发光元件的情况下，需要具有安装有驱动TFT的至少两个晶体管的结构来防止导通电流的不均匀性提供给像素区域的开关TFT。因此，通常使用大的基板，半导体元件结构的简化和半导体元件的制造工艺成为迫切的任务。根据本发明，在形成源极区域和漏极区域之后，形成作为沟道保护膜的绝缘膜覆盖用作沟道区域的部分，然后形成岛状半导体膜。因此，可以仅使用金属掩模而不形成抗蚀剂掩模来制造半导体元件，因此可以简化该工艺。

4. 发明申请

US20070090358A1 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20070090358A1
公开(公告)日：2007-04-26
申请号：US10576692
申请日：2004-11-05
申请人： Yohei Kanno , Gen Fujii
发明人： Yohei Kanno , Gen Fujii
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/66765 , H01L29/78696
摘要： Especially in case that a light-emitting element composed of layers containing organic compounds or inorganic compounds is driven by a thin film transistor (TFT), a structure having at least two transistors installed with a drive TFT is required to prevent irregularities of ON current of a switching TFT provided to a pixel region. Hence, the simplification of a semiconductor element structure and a process for manufacturing a semiconductor element becomes an urgent task as a large substrate is frequently used. According to the present invention, after that a source region and a drain region are formed, an insulating film serving as a channel protective film is formed to cover a portion for serving as a channel region, then, an island-like semiconductor film is formed. Accordingly, a semiconductor element can be manufactured by using only a metallic mask without forming a resist mask, and so the process can be simplified.
摘要翻译：特别是在由薄膜晶体管（TFT）驱动由含有有机化合物或无机化合物的层构成的发光元件的情况下，需要具有安装有驱动TFT的至少两个晶体管的结构来防止导通电流的不均匀性提供给像素区域的开关TFT。因此，通常使用大的基板，半导体元件结构的简化和半导体元件的制造工艺成为迫切的任务。根据本发明，在形成源极区域和漏极区域之后，形成作为沟道保护膜的绝缘膜覆盖用作沟道区域的部分，然后形成岛状半导体膜。因此，可以仅使用金属掩模而不形成抗蚀剂掩模来制造半导体元件，因此可以简化该工艺。

5. 发明授权

US08053780B2 Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same 有权
标题翻译：半导体元件及其制造方法，液晶显示装置及其制造方法
公开(公告)号：US08053780B2
公开(公告)日：2011-11-08
申请号：US10577057
申请日：2004-11-05
申请人： Yohei Kanno , Gen Fujii
发明人： Yohei Kanno , Gen Fujii
IPC分类号： H01L31/036 , G02F1/1333
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/78603 , H01L29/78696
摘要： In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
摘要翻译：在常规TFT形成为具有反交错型的情况下，需要通过在形成岛状半导体区域中的曝光，显影和液滴放电来形成抗蚀剂掩模。这导致过程数量和材料数量的增加。根据本发明，由于在形成源极区域和漏极区域之后，由于作为沟道区域的部分被用作沟道保护膜的绝缘膜覆盖以形成岛状半导体膜，因此可以简化工艺，因此可以仅使用金属掩模而不使用抗蚀剂掩模来制造半导体元件。

6. 发明申请

US20070131976A1 Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same 有权
标题翻译：半导体元件及其制造方法，液晶显示装置及其制造方法
公开(公告)号：US20070131976A1
公开(公告)日：2007-06-14
申请号：US10577057
申请日：2004-11-05
申请人： Yohei Kanno , Gen Fujii
发明人： Yohei Kanno , Gen Fujii
IPC分类号： H01L27/148 , H01L29/768 , H01L29/74
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L29/42384 , H01L29/78603 , H01L29/78696
摘要： In case that a conventional TFT is formed to have an inversely staggered type, a resist mask is required to be formed by an exposing, developing, and droplet discharging in forming an island-like semiconductor region. It resulted in the increase in the number of processes and the number of materials. According to the present invention, a process can be simplified since after forming a source region and a drain region, a portion serving as a channel region is covered by an insulating film serving as a channel protecting film to form an island-like semiconductor film, and so a semiconductor element can be manufactured by using only metal mask without using a resist mask.
摘要翻译：在常规TFT形成为具有反交错型的情况下，需要通过在形成岛状半导体区域中的曝光，显影和液滴放电来形成抗蚀剂掩模。这导致过程数量和材料数量的增加。根据本发明，由于在形成源极区域和漏极区域之后，由于作为沟道区域的部分被用作沟道保护膜的绝缘膜覆盖以形成岛状半导体膜，因此可以简化工艺，因此可以仅使用金属掩模而不使用抗蚀剂掩模来制造半导体元件。

7. 发明授权

US09013303B2 Product management system 有权
标题翻译：产品管理系统
公开(公告)号：US09013303B2
公开(公告)日：2015-04-21
申请号：US13555519
申请日：2012-07-23
申请人： Yasuyuki Arai , Mai Akiba , Yuko Tachimura , Yohei Kanno
发明人： Yasuyuki Arai , Mai Akiba , Yuko Tachimura , Yohei Kanno
IPC分类号： G08B1/08 , H04B5/00 , G06K7/10 , G06K17/00 , G06K19/077 , H04Q5/22 , G08B13/14 , H01L21/336
CPC分类号： H04B5/0012 , G06K7/10178 , G06K17/00 , G06K19/07758 , G06K2017/0051 , H04B5/0056 , H04B5/0081
摘要： One feature of the present invention is a product management system that includes a package body for packing a product attached with an ID tag, and a reader/writer. The ID tag includes a thin film integrated circuit portion and an antenna, the package body includes a resonance circuit portion having an antenna coil and a capacitor, and the resonance circuit portion can communicate with the reader/writer and the ID tag. Accordingly, the stability of communication between an ID tag attached to a product and an R/W can be secured, and management of products can be conducted simply and efficiently, even if a product is packed by a package body.
摘要翻译：本发明的一个特征是产品管理系统，其包括用于打包附有ID标签的产品的包装体和读取器/写入器。 ID标签包括薄膜集成电路部分和天线，封装主体包括具有天线线圈和电容器的谐振电路部分，并且谐振电路部分可以与读取器/写入器和ID标签通信。因此，即使产品被包装体包装，也可以确保附着在产品上的ID标签与R / W之间的通信的稳定性，并且可以简单有效地进行产品的管理。

8. 发明授权

US07994617B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07994617B2
公开(公告)日：2011-08-09
申请号：US10587237
申请日：2005-02-01
申请人： Yasuyuki Arai , Yuko Tachimura , Yohei Kanno , Mai Akiba
发明人： Yasuyuki Arai , Yuko Tachimura , Yohei Kanno , Mai Akiba
IPC分类号： H01L23/02
CPC分类号： H01L27/1266 , G06K19/025 , G06K19/07728 , G06K19/07749 , H01L27/1214 , H01L27/13 , H01L2221/6835 , H01L2224/73204
摘要： An object of the present invention is providing a semiconductor device that is capable of improving the reliability of a semiconductor element and enhancing the mechanical strength without suppressing the scale of a circuit. The semiconductor device includes an integrated circuit sandwiched between first and second sealing films, an antenna electrically connected to the integrated circuit, the first sealing film sandwiched between a substrate and the integrated circuit, which includes a plurality of first insulating films and at least one second insulating film sandwiched therebetween, the second sealing film including a plurality of third insulating films and at least one fourth insulating film sandwiched therebetween. The second insulating film has lower stress than the first insulting film and the fourth insulating film has lower stress than the third insulating film. The first and third insulating films are inorganic insulating films.
摘要翻译：本发明的目的在于提供一种能够提高半导体元件的可靠性并提高机械强度而不抑制电路规模的半导体装置。半导体器件包括夹在第一和第二密封膜之间的集成电路，与集成电路电连接的天线，夹在基板和集成电路之间的第一密封膜，其包括多个第一绝缘膜和至少一个第二绝缘膜夹在其间的绝缘膜，所述第二密封膜包括多个第三绝缘膜和夹在其间的至少一个第四绝缘膜。第二绝缘膜具有比第一绝缘膜低的应力，并且第四绝缘膜具有比第三绝缘膜更低的应力。第一和第三绝缘膜是无机绝缘膜。

9. 发明授权

US07465647B2 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device 有权
公开(公告)号：US07465647B2
公开(公告)日：2008-12-16
申请号：US11896509
申请日：2007-09-04
申请人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
发明人： Shunpei Yamazaki , Toru Takayama , Yohei Kanno
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/6835 , G06K19/0704 , G06K19/0723 , G06K19/07703 , G06K19/07718 , G06K19/07745 , G06K19/07749 , G06K19/0775 , G06K19/07758 , G06K19/07779 , G06K19/07781 , G06K19/07783 , H01L23/49855 , H01L2221/68318 , H01L2221/68359 , H01L2221/68368 , H01L2224/45147 , H01L2224/49171 , H01L2924/00014 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/3011 , H01L2924/00 , H01L2224/48 , H01L2924/00011
摘要： With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip.A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.

10. 发明授权

US08322847B2 Liquid droplet ejection system and control program of ejection condition of compositions 有权
标题翻译：液滴喷射系统和组合物喷射条件控制程序
公开(公告)号：US08322847B2
公开(公告)日：2012-12-04
申请号：US13049078
申请日：2011-03-16
申请人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Shinji Maekawa , Yohei Kanno
发明人： Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Shinji Maekawa , Yohei Kanno
IPC分类号： B41J2/01 , B05B7/06 , H01L21/36
CPC分类号： H01L51/0004 , H01L51/56 , H05K1/0269 , H05K3/0008 , H05K3/1241
摘要： When using a liquid droplet ejection method, a conventional photomask is not required, however, it is required instead that a moving path of a nozzle or a substrate is controlled with accuracy at least in ejecting liquid droplets. According to the characteristics of compositions to be ejected or their pattern, such ejection conditions are desirably set as the moving rate of a nozzle or a substrate, ejection quantity, ejection distance and ejection rate of compositions, atmosphere of the space that the compositions are ejected, the temperature and moisture of the space, and heating temperature of the substrate. A liquid droplet ejection system in accordance with the invention comprises an input means for inputting data of a thin film pattern, a set means for setting a nozzle for a ejecting a composition containing a material for forming the thin film or setting a moving path of the substrate to which the composition is ejected, an image pick-up means for detecting an alignment marker formed on a substrate and a control means for controlling the moving path of the nozzle or the substrate.
摘要翻译：当使用液滴喷射方法时，不需要常规的光掩模，然而，需要至少在喷射液滴时精确地控制喷嘴或基板的移动路径。根据要喷射的组合物或其图案的特征，这种喷射条件期望设置为喷嘴或基底的移动速率，喷射量，喷射距离和组合物的喷射速率，组合物喷出的空间的气氛，空间的温度和湿度，以及基板的加热温度。根据本发明的液滴喷射系统包括用于输入薄膜图案的数据的输入装置，用于设置用于喷射包含用于形成薄膜的材料的组合物的喷嘴的设定装置或设置该薄膜图案的移动路径用于检测形成在基板上的取向标记的图像拾取装置和用于控制喷嘴或基板的移动路径的控制装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式