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1. 发明授权

US5682060A Process for manufacturing integrated circuit capacitors and resistors and the capacitors and resistors 失效
标题翻译：集成电路电容器和电阻器以及电容器和电阻器的制造工艺
公开(公告)号：US5682060A
公开(公告)日：1997-10-28
申请号：US427474
申请日：1995-04-24
申请人： Yingsheng Tung , Robert E. Dixon
发明人： Yingsheng Tung , Robert E. Dixon
IPC分类号： H01L21/02 , H01L29/00 , H01L23/48 , H01L29/40
CPC分类号： H01L28/20 , H01L28/40
摘要： A method of making an integrated circuit capacitor and/or resistor and the capacitor and/or resistor wherein the method comprises providing an electrically conductive region, preferably highly doped silicon, forming a first electrode of a capacitor, forming a layer of electrically insulating material, preferably silicon oxide, silicon nitride or a combination thereof, over the surface and forming a layer of a metal silicide, preferably titanium silicide, over the layer of electrically insulating material by forming a layer of polysilicon over the layer of electrically insulating material, forming a layer of a metal, preferably titanium, which forms an electrically conductive composition when reacted with polysilicon over the layer of polysilicon, reacting the metal with the polysilicon to form an electrically conductive layer therewith and removing any unreacted metal. In accordance with a second embodiment, wherein both capacitor electrodes are accessible from one side of the capacitor, a portion of the first electrode is exposed and the layer of a metal silicide extends to and contacts the exposed portion of the first electrode. The portion of the layer of metal silicide contacting the first electrode is electrically isolated from a predetermined other portion of the layer of metal silicide which is disposed over the region to form a second electrode.
摘要翻译：一种制造集成电路电容器和/或电阻器以及电容器和/或电阻器的方法，其中所述方法包括提供导电区域，优选高度掺杂的硅，形成电容器的第一电极，形成电绝缘材料层，优选氧化硅，氮化硅或其组合，并通过在电绝缘材料层上形成多晶硅层在电绝缘材料层上形成金属硅化物层，优选硅化钛层，形成金属层，优选为钛，当与多晶硅层上的多晶硅反应时，其形成导电组合物，使金属与多晶硅反应以与其形成导电层并除去任何未反应的金属。根据第二实施例，其中两个电容器电极可从电容器的一侧接近，第一电极的一部分被暴露，并且金属硅化物层延伸到第一电极的暴露部分并与其接触。接触第一电极的金属硅化物层的部分与设置在该区域上的金属硅化物层的预定的其它部分电隔离以形成第二电极。

2. 发明授权

US5500387A Method of making high performance capacitors and/or resistors for integrated circuits 失效
标题翻译：制造用于集成电路的高性能电容器和/或电阻器的方法
公开(公告)号：US5500387A
公开(公告)日：1996-03-19
申请号：US197439
申请日：1994-02-16
申请人： Yingsheng Tung , Robert E. Dixon , Shih-Hsin Ying
发明人： Yingsheng Tung , Robert E. Dixon , Shih-Hsin Ying
IPC分类号： H01L21/02 , H01L27/06 , H01L21/8242
CPC分类号： H01L28/20 , H01L27/0629 , H01L28/40 , Y10S438/981
摘要： A method of making an integrated circuit containing a capacitor comprising the steps of providing a semiconductor substrate having an active region and an oxide region on the substrate defining the active region, forming a mask on the active region, forming a region of heavily doped polysilicon on the oxide region having a doping level of from about 10 to about 15 ohms/square, removing the mask from the active region, commencing fabrication of an active device in the active region, forming a layer of electrically insulating material over the region of heavily doped polysilicon and a layer of electrically insulating material over the active region, forming a layer of heavily doped polysilicon having a doping level of from about 10 to about 15 ohms/square on the electrically insulating material to complete fabrication of the capacitor and on the active region and completing fabrication of an active device in the active region. More than one capacitor can be formed, this being accomplished by concurrently duplication of the above described process of forming a capacitor on another region of the substrate. The capacitors can have different capacitance by enlarging the insulating layer thereof, this being accomplished either by removal of oxide from or addition of oxide to one of the capacitors to the exclusion of the other during processing.
摘要翻译：一种制造包含电容器的集成电路的方法，包括以下步骤：在限定有源区的衬底上提供具有有源区和氧化物区的半导体衬底，在有源区上形成掩模，形成重掺杂多晶硅区域所述氧化物区域具有约10至约15欧姆/平方的掺杂水平，从有源区域移除掩模，开始在有源区域中制造有源器件，在重掺杂区域上形成电绝缘材料层多晶硅和电绝缘材料层，在电绝缘材料上形成具有约10至约15欧姆/平方的掺杂水平的重掺杂多晶硅层，以完成电容器的制造和有源区并且在有源区域中完成有源器件的制造。可以形成多于一个的电容器，这通过在衬底的另一区域上形成电容器的上述工艺的同时复制来实现。电容器可以通过扩大其绝缘层而具有不同的电容，这通过从处理中除去氧化物或氧化物添加到电容器之一来排除另外的电容来实现。

3. 发明授权

US4632058A Apparatus for uniform chemical vapor deposition 失效
标题翻译：用于均匀化学气相沉积的设备
公开(公告)号：US4632058A
公开(公告)日：1986-12-30
申请号：US584073
申请日：1984-02-27
申请人： Robert E. Dixon , James McDiarmid
发明人： Robert E. Dixon , James McDiarmid
IPC分类号： C23C16/44 , C23C16/46 , C23C16/24
CPC分类号： C23C16/44 , C23C16/46
摘要： A vertical reactor for chemical vapor deposition having an H.sub.1 /D.sub.1 ratio in the range of 1.10 to 1.40, where H.sub.1 is the height of the reactor bell jar enclosure above the susceptor and D.sub.1 is the diameter of the susceptor. Reactor performance is further improved by extending the outermost coil of the induction coil heating the susceptor beyond the outer diameter of the susceptor and by extending the innermost coil of the induction coil within the inner diameter of the susceptor.
摘要翻译：用于化学气相沉积的垂直反应器，其H1 / D1比在1.10至1.40的范围内，其中H1是基座上方的反应器钟罩外壳的高度，D1是基座的直径。通过将感应线圈的最外线圈延伸超过基座的外径并将感应线圈的最内线圈延伸到基座的内径内，来进一步提高反应器的性能。

4. 发明授权

US5888303A Gas inlet apparatus and method for chemical vapor deposition reactors 失效
标题翻译：用于化学气相沉积反应器的进气装置和方法
公开(公告)号：US5888303A
公开(公告)日：1999-03-30
申请号：US826764
申请日：1997-04-07
申请人： Robert E. Dixon
发明人： Robert E. Dixon
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45576
摘要： A gas inlet apparatus and method for introducing gas streams into the process chamber of a chemical vapor deposition reactor. The inlet includes conduits that are coaxially arranged and spaced radially apart, with the passageways formed therebetween carrying the gas streams. A conical surface is provided at the stream-exiting end of the inlet so that gases impinge upon it and are then dispersed within the reactor.
摘要翻译：一种用于将气流引入化学气相沉积反应器的处理室的气体入口装置和方法。入口包括同轴布置并且径向间隔开的导管，其间形成的通道携带气流。锥形表面设置在入口的流出射端处，使得气体撞击在其上，然后分散在反应器内。

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