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1. 发明授权

US06310751B1 Anti-parallel longitudinal patterned exchange biased dual stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：反平行纵向图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06310751B1
公开(公告)日：2001-10-30
申请号：US09182775
申请日：1998-10-30
申请人： Yimin Guo , Kochan Ju , Hui-Chuan Wang , Simon H. Liao
发明人： Yimin Guo , Kochan Ju , Hui-Chuan Wang , Simon H. Liao
IPC分类号： G11B539
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3932 , G11B5/3954
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned longitudinal magnetic biasing layers formed of a single longitudinal magnetic biasing material longitudinally magnetically biased in substantially anti-parallel directions. When longitudinally magnetically biasing the second pair of patterned longitudinal magnetic biasing layers there is employed a thermal annealing method employing a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field strength such that the pair of longitudinally magnetically biased patterned first longitudinal magnetic biasing layers is not substantially demagnetized.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双条磁阻（DSMR）传感器元件时，采用两对图案化的纵向磁偏置层，该纵向磁偏置层由基本反平行方向纵向磁偏置的单个纵向磁偏置材料形成。当纵向磁偏置第二对图案化的纵向磁偏置层时，采用采用热退火温度，热退火曝光时间和非本征偏磁场强度的热退火方法，使得该对纵向磁偏压图案化的第一纵向磁性偏压层基本上不退磁。

2. 发明授权

US06449131B2 Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：垂直图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06449131B2
公开(公告)日：2002-09-10
申请号：US09818963
申请日：2001-03-28
申请人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
发明人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
IPC分类号： G11B539
CPC分类号： G11B5/3954 , G11B5/3932 , H04R15/00 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对成对的第一对横向磁偏压图案化磁偏置层时，基本上不消磁向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

3. 发明授权

US06230390B1 Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
标题翻译：垂直图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法
公开(公告)号：US06230390B1
公开(公告)日：2001-05-15
申请号：US09182761
申请日：1998-10-30
申请人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
发明人： Yimin Guo , Kochan Ju , Po-Kang Wang , Cherng-Chyi Han , Hui-Chuan Wang
IPC分类号： G11B5127
CPC分类号： G11B5/3954 , G11B5/3932 , H04R15/00 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.
摘要翻译：双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对的第一对横向磁偏压图案化的偏磁层基本上消磁时，向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

4. 发明授权

US07111386B2 Lead plating method for GMR head manufacture 失效
公开(公告)号：US07111386B2
公开(公告)日：2006-09-26
申请号：US11266418
申请日：2005-11-03
申请人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
发明人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49128
摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

5. 发明申请

US20060048375A1 Lead plating method for GMR head manufacture 失效
公开(公告)号：US20060048375A1
公开(公告)日：2006-03-09
申请号：US11266418
申请日：2005-11-03
申请人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
发明人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
IPC分类号： G11B5/127 , H04R31/00 , C25D5/02
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49128
摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

6. 发明授权

US06973712B2 Lead plating method for GMR head manufacture 失效
标题翻译： GMR头制造的铅电镀方法
公开(公告)号：US06973712B2
公开(公告)日：2005-12-13
申请号：US10093106
申请日：2002-03-07
申请人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
发明人： Chao-Peng Chen , Kevin Lin , Jei-Wei Chang , Kochan Ju , Hui-Chuan Wang
IPC分类号： G11B5/31 , G11B5/39 , G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49128
摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.
摘要翻译： GMR结构的Lead Overlay设计中的一个主要问题是磁性读取磁道宽度比物理读取磁道宽度宽。这是由于引线和GMR层之间的高界面电阻，这是现有技术方法的不可避免的副作用。本发明使用在湿蚀刻之前的电镀来制造引线。该方法仅需要在GMR层上的薄保护层，以确保接口电阻最小。使用湿表面清洁可以避免溅射缺陷，电镀与此相容，因此清洁表面被保留只需要一个光刻步骤来定义轨道，因为没有重新沉积。

7. 发明授权

US06322640B1 Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element 失效
标题翻译：用于形成反铁磁交换偏磁电阻（MR）传感器元件的多重热退火方法
公开(公告)号：US06322640B1
公开(公告)日：2001-11-27
申请号：US09489969
申请日：2000-01-24
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Hui-Chuan Wang , Jei-Wei Chang , Cherng-Chyi Han , Kochan Ju
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Hui-Chuan Wang , Jei-Wei Chang , Cherng-Chyi Han , Kochan Ju
IPC分类号： H01F4100
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F41/302 , H01L43/12 , Y10T29/49034
摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.
摘要翻译：一种用于形成磁偏置磁阻（MR）层的方法。首先提供基板。然后在衬底上形成铁磁磁阻（MR）材料层。然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。

8. 发明授权

US07262941B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US07262941B2
公开(公告)日：2007-08-28
申请号：US10856180
申请日：2004-05-28
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5/39
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译：一种具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件和包括单个镜面反射纳米氧化物层（NOL）或包含非金属层的双层和镜面反射纳米氧化物层反射纳米氧化层。由于它们的结构及其制造方法的结果，这些元件具有比现有技术的元件更高的GMR比和更低的电阻。

9. 发明授权

US07180712B1 Shield structure design to improve the stability of an MR head 有权
标题翻译：盾构结构设计提高MR头的稳定性
公开(公告)号：US07180712B1
公开(公告)日：2007-02-20
申请号：US09513873
申请日：2000-02-28
申请人： Min Li , Simon H. Liao , Cheng T. Horng , Kochan Ju
发明人： Min Li , Simon H. Liao , Cheng T. Horng , Kochan Ju
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/112 , G11B5/3912 , H01L43/08
摘要： A method for forming a laminated shield to improve the stability and performance of an MR read head and the MR read head formed using that shield. The shield consists of two layers of ferromagnetic material separated by a layer of ruthenium, allowing the ferromagnetic layers to form an antiferromagnetic configuration by means of a quantum mechanical exchange interaction. The antiferromagnetic configuration has a stable domain structure and a magnetization that forms closed loops around the shield edges thereby reducing noise in the readback signal and reducing disturbances to the magnetic state of the sensor element.
摘要翻译：一种用于形成层叠屏蔽以提高使用该屏蔽形成的MR读取头和MR读取头的稳定性和性能的方法。屏蔽由两层铁磁材料组成，由一层钌分离，允许铁磁层通过量子力学交换相互作用形成反铁磁性结构。反铁磁构造具有稳定的畴结构和磁化，其在屏蔽边缘周围形成闭环，从而降低回读信号中的噪声并减少对传感器元件的磁状态的干扰。

10. 发明授权

US06909583B2 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US06909583B2
公开(公告)日：2005-06-21
申请号：US10437090
申请日：2003-05-13
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译：一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

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