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1. 发明授权

US06754106B1 Reference cell with various load circuits compensating for source side loading effects in a non-volatile memory 有权
标题翻译：具有补偿非易失性存储器中的源极负载效应的各种负载电路的参考电池
公开(公告)号：US06754106B1
公开(公告)日：2004-06-22
申请号：US10245146
申请日：2002-09-16
申请人： Yider Wu , Jean Yang , Jiang Li
发明人： Yider Wu , Jean Yang , Jiang Li
IPC分类号： G11C1606
CPC分类号： G11C11/5642 , G11C16/28 , G11C2211/5634
摘要： A load circuit for compensating for source side loading effects in a non-volatile memory. Specifically, embodiments of the present invention describe a reference cell that is coupled to a plurality of load circuits. At least one of the plurality of load circuits, an mth load circuit, comprises a select transistor coupled to m resistors that are coupled in series. The mth load circuit matches a source side loading effect of a corresponding mth memory cell located m memory cells away from a source line node on a source line coupling source regions in memory cells of a row of memory cells.
摘要翻译：用于补偿非易失性存储器中源侧负载效应的负载电路。具体地，本发明的实施例描述了耦合到多个负载电路的参考单元。多个负载电路中的至少一个负载电路包括耦合到串联耦合的m个电阻器的选择晶体管。第m个负载电路将位于m个存储单元的相应的第m个存储器单元的源极负载效应与源极线上的源极线节点耦合，该源极线耦合存储器单元的行的存储器单元中的源极区域。

2. 发明授权

US06628545B1 Memory circuit for suppressing bit line current leakage 有权
标题翻译：用于抑制位线电流泄漏的存储电路
公开(公告)号：US06628545B1
公开(公告)日：2003-09-30
申请号：US10306080
申请日：2002-11-26
申请人： Jiang Li , Yider Wu , Zhizheng Liu
发明人： Jiang Li , Yider Wu , Zhizheng Liu
IPC分类号： G11C1604
CPC分类号： G11C16/3404
摘要： A memory circuit employed in a memory device is disclosed. According to one embodiment, the memory circuit comprises a first memory cell and a second memory cell. The first memory cell has a drain terminal connected to a bit line, which is connected to a sensing circuit. The first memory cell also has a control gate connected to a word line. The second memory cell also has a drain terminal connected to the bit line. The second memory cell has its control gate coupled to ground. The memory circuit supplies a source voltage greater than a ground voltage to a source terminal of the first memory cell and to a source terminal of the second memory cell such that the gate-to-source voltage of the second memory cell is less than the threshold voltage of the second memory cell.
摘要翻译：公开了一种在存储器件中使用的存储器电路。根据一个实施例，存储器电路包括第一存储单元和第二存储单元。第一存储单元具有连接到位线的漏极端子，该位线连接到感测电路。第一存储单元还具有连接到字线的控制栅极。第二存储单元还具有连接到位线的漏极端子。第二存储单元的控制栅极接地。存储器电路将大于接地电压的源极电压提供给第一存储单元的源极端子和第二存储器单元的源极端子，使得第二存储器单元的栅极 - 源极电压小于阈值第二存储单元的电压。

3. 发明授权

US06331954B1 Determination of misalignment for floating gates near a gate stack bending point in array of flash memory cells 失效
标题翻译：确定闪存单元阵列中栅堆叠弯曲点附近浮动栅极的未对准
公开(公告)号：US06331954B1
公开(公告)日：2001-12-18
申请号：US09894777
申请日：2001-06-28
申请人： John J. Wang , Jiang Li , Yider Wu
发明人： John J. Wang , Jiang Li , Yider Wu
IPC分类号： G11C1634
CPC分类号： G11C29/50 , G11C16/04 , G11C29/24 , G11C2029/5002 , G11C2029/5006
摘要： For electrically determining the level of misalignment of floating gate structures closest to a gate stack bending point in an array of flash memory cells, a plurality of test flash memory cells are formed with each test flash memory cell having a respective floating gate structure designed to be disposed a respective displacement distance from a respective gate stack bending point. An erase operation is performed for each of the test flash memory cells by biasing the test flash memory cells with voltages from a plurality of voltage sources. Each of the test flash memory cells are then biased with test voltages from the plurality of voltage sources. A respective current meter then measures a respective amount of current flowing through each of the test flash memory cells when biased with the test voltages. The level of misalignment is determined depending on which of the test flash memory cells conducts a current level that is greater than a threshold current level when biased with the test voltages. The level of misalignment is approximately equal to a highest one of the respective displacement distance corresponding to one of the test flash memory cells that conducts a current level that is greater than the threshold current level.
摘要翻译：为了电气地确定最靠近闪速存储器单元阵列中的栅堆叠弯曲点的浮栅结构的未对准电平，形成多个测试闪存单元，每个测试闪速存储单元具有相应的浮栅结构，其设计为从相应的栅堆叠弯曲点设置相应的位移距离。通过利用来自多个电压源的电压偏置测试闪存单元，对每个测试闪存单元执行擦除操作。然后每个测试闪存单元被来自多个电压源的测试电压偏置。然后，相应的电流表随着测试电压的偏差测量流过每个测试闪存单元的相应电流量。根据测试闪速存储器单元中的哪一个导通当被测试电压偏置时大于阈值电流电平的电流电平来确定未对准电平。未对准的电平近似等于对应于传导大于阈值电流电平的电流电平的测试闪存单元之一的相应位移距离中的最高一个。

4. 发明授权

US10171892B2 System and method for monitoring water level on a roof 有权
公开(公告)号：US10171892B2
公开(公告)日：2019-01-01
申请号：US15347409
申请日：2016-11-09
申请人： John Petrachek , Xuewen Zhu , Jiang Li , Jianbin Xiao
发明人： John Petrachek , Xuewen Zhu , Jiang Li , Jianbin Xiao
IPC分类号： H04Q9/00 , G01F23/30 , H04L29/08 , E04D5/14 , E04D13/00 , G01K1/02 , G01K1/14 , G08B21/18 , G08B17/06
摘要： A drain monitor, a system, and a method monitor water level on a roof. The drain monitor includes a base for attaching to the roof, a riser attached to the base and projecting from the roof, a water level sensor attached to the riser for measuring water level on the roof, and a communication system positioned on the riser for transmitting measurement data received from the water level sensor.

5. 发明授权

US10081754B2 Gel compositions for hydraulic fracturing applications 有权
$Gel compositions for hydraulic fracturing applications$
公开(公告)号：US10081754B2
公开(公告)日：2018-09-25
申请号：US14770668
申请日：2014-02-28
申请人： Kemira Oyj , Jiang Li , Roopa Tellakula
发明人： Jiang Li , Roopa Tellakula
IPC分类号： C09K8/66 , C09K8/12 , C09K8/68 , C09K8/80 , C09K8/88
CPC分类号： C09K8/12 , C09K8/685 , C09K8/805 , C09K8/88 , C09K8/887 , C09K2208/12 , C09K2208/28 , C09K2208/32
摘要： Gel compositions comprising an acrylamide polymer or copolymer crosslinked with dialdehyde, methods to produce the gel compositions, wellbore treatment fluids comprising the gel compositions, and methods of treating a well bore comprising injecting the gel compositions, are provided. In the drilling, completion, and stimulation of oil and gas wells, well treatment fluids are often pumped into well bore holes under high pressure and at high flow rates causing the rock formation surrounding the well bore to fracture.

6. 发明申请

US20160024375A1 Friction Reducing Polymers 审中-公开
标题翻译：摩擦减少聚合物
公开(公告)号：US20160024375A1
公开(公告)日：2016-01-28
申请号：US14774438
申请日：2014-03-18
申请人： Jiang LI , Ronald SON , Philip WATSON , Logan JACKSON , Kemira Oyj
发明人： Jiang Li , Ronald Robinson , Philip Watson , Logan Jackson
IPC分类号： C09K8/68 , E21B43/20 , E21B43/26
CPC分类号： C09K8/68 , C08F8/12 , C08F2810/50 , C09K8/035 , C09K2208/28 , C09K2208/34 , E21B43/20 , E21B43/26 , C08F220/56 , C08F218/08 , C08F220/06 , C08F216/06
摘要： Described herein are friction reducing polymers comprising two or more recurring units wherein at least one recurring unit is an acrylic acid or acrylamide monomer and at least one recurring unit is a vinyl monomer selected from a vinyl alcohol, a vinyl ester, and a vinyl ether.
摘要翻译：本文描述的是包含两个或多个重复单元的减摩聚合物，其中至少一个重复单元是丙烯酸或丙烯酰胺单体，并且至少一个重复单元是选自乙烯醇，乙烯基酯和乙烯基醚的乙烯基单体。

7. 发明授权

US09160794B2 Network address translators (NAT) type detection techniques 有权
标题翻译：网络地址转换器（NAT）类型检测技术
公开(公告)号：US09160794B2
公开(公告)日：2015-10-13
申请号：US12328296
申请日：2008-12-04
申请人： Qingwei Lin , Jiang Li , Jian-guang Lou , Yusuo Hu , Fan Li
发明人： Qingwei Lin , Jiang Li , Jian-guang Lou , Yusuo Hu , Fan Li
IPC分类号： G06F15/16 , H04L29/08 , H04L12/26 , H04L29/12 , H04L12/24 , H04L29/06
CPC分类号： H04L67/104 , H04L29/12339 , H04L41/12 , H04L43/50 , H04L61/2503 , H04L69/28
摘要： Techniques described herein enable peers to determine each peer's NAT type much more efficiently and quickly than when compared with existing techniques. To do so, a peer simultaneously sends multiple test messages to a server. The peer then waits to either receive a response for each of the multiple test messages or may store an indication that no response has been received after a predetermined timeout period. The peer then analyzes the received responses and/or the stored timeout indications to determine the peer's NAT type or to determine that the peer is operating free from concealment by a NAT/firewall device. By simultaneously sending the multiple test messages, the peer may determine the NAT type within a maximum time defined by the predetermined timeout period or a roundtrip time period that is required for communication between the peer and the server. As such, the tools allow for efficient NAT-type detection.
摘要翻译：本文描述的技术使得对等体能够比与现有技术相比更有效和快速地确定每个对等体的NAT类型。为此，对等体同时向服务器发送多个测试消息。然后，对等体等待接收多个测试消息中的每一个的响应，或者可以存储在预定的超时时段之后没有接收到响应的指示。对等体然后分析接收到的响应和/或存储的超时指示以确定对等体的NAT类型或者确定对等体正在从NAT /防火墙设备的隐藏中运行。通过同时发送多个测试消息，对等体可以在由对等体和服务器之间的通信所需的预定超时时间段或往返时间周期限定的最大时间内确定NAT类型。因此，这些工具允许有效的NAT类型检测。

8. 发明授权

US09054482B1 Laser diode stack assembly and method of manufacturing 有权
标题翻译：激光二极管组件及其制造方法
公开(公告)号：US09054482B1
公开(公告)日：2015-06-09
申请号：US14271709
申请日：2014-05-07
申请人： Jiang Li
发明人： Jiang Li
IPC分类号： H01S3/04 , H01S5/022 , H01S5/024 , H01S5/40 , H01L23/36 , H01L21/48 , H01L23/367 , H01L27/15
CPC分类号： H01L21/4871 , H01L23/36 , H01L23/3672 , H01L23/3677 , H01L27/156 , H01L2924/0002 , H01S3/04 , H01S3/0405 , H01S5/02264 , H01S5/02272 , H01S5/024 , H01S5/02476 , H01S5/4025 , H01S5/405 , H01L2924/00
摘要： A laser diode sub-assembly includes a plurality of laser diode bars, electrically conductive spacers and electrically insulative heat spreaders. The spacers and laser diode bars are arranged by alternating to affix each other via the solder preforms and aligned on the front surfaces, while the back surfaces of the spacers affix the top metalized surfaces of the heat spreaders via the same type of solder preforms. Specially designed fixtures can hold all the components in positions and go through the reflowing. The subassembly can be formed by one heating step. The laser diode stack can be formed by soldering the bottom metalized surfaces of the heat spreaders, via a lower melting temperature solder preform, to a heat sink.
摘要翻译：激光二极管子组件包括多个激光二极管条，导电间隔物和电绝缘散热器。间隔物和激光二极管条通过交替地经由焊料预成型件彼此贴合并且在前表面上对准地布置，而间隔件的后表面通过相同类型的焊料预制件固定散热器的顶部金属化表面。特殊设计的夹具可以将所有部件保持在位置并通过回流。子组件可以通过一个加热步骤形成。激光二极管堆叠可以通过将散热器的底部金属化表面通过较低熔点的焊料预制件焊接到散热器来形成。

9. 发明授权

US08973231B1 Methods for forming electrically precise capacitors, and structures formed therefrom 有权
标题翻译：用于形成电精密电容器的方法和由其形成的结构
公开(公告)号：US08973231B1
公开(公告)日：2015-03-10
申请号：US13868916
申请日：2013-04-23
申请人： Arvind Kamath , Criswell Choi , Patrick Smith , Erik Scher , Jiang Li
发明人： Arvind Kamath , Criswell Choi , Patrick Smith , Erik Scher , Jiang Li
IPC分类号： H01G4/06 , H01G4/01 , H01G13/00
CPC分类号： H01G4/40 , H01G4/002 , H01G4/005 , H01G4/008 , H01G4/01 , H01G4/10 , H01G4/1209 , H01G4/224 , H01G4/30 , H01G4/306 , H01G4/33 , H01G13/00 , H01L23/66 , H01L27/016 , H01L28/60 , H01L2223/6677 , H01Q1/22 , H01Q1/2283 , H01Q1/38 , Y10T29/43 , Y10T29/435 , Y10T29/49002 , Y10T29/49016
摘要： High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition are disclosed. The method generally includes the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. The methods provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
摘要翻译：公开了一种高精度电容器及其形成方法，其利用精确且高度保形的沉积工艺在绝缘层上沉积各种粗糙度和组成的衬底。该方法通常包括以下步骤：通过原子层沉积（ALD）在金属衬底上沉积第一绝缘层; （b）在所述第一绝缘层上形成第一电容器电极; 和（c）在所述第一绝缘层上形成第二绝缘层，并且在所述第一电容器电极上或与所述第一电容器电极相邻。这些方法提供了一种改进的沉积工艺，其在宽范围的衬底上产生高度保形的绝缘层，从而产生改进的电容器。

10. 发明授权

US08475212B1 Charging connector 失效
标题翻译：充电连接器
公开(公告)号：US08475212B1
公开(公告)日：2013-07-02
申请号：US13401760
申请日：2012-02-21
申请人： Jiang Li , Ming-Han Lin , Li-Jun Xu
发明人： Jiang Li , Ming-Han Lin , Li-Jun Xu
IPC分类号： H01R13/648
CPC分类号： H01R24/38 , H01R4/023
摘要： A charging connector adapted for connecting between a mated connector and a cable includes an insulating housing, a terminal and a shielding shell surrounding the insulating housing. The insulating housing has a base body, and a protruding portion protruding upward from a top surface of the base body. The insulating housing defines a terminal groove. The terminal has a locating piece located on the top surface of the base body. A front of the locating piece defines a contact piece disposed in the terminal groove with a front thereof electrically contacting with the mated connector. A rear of the locating piece defines a soldering piece disposed to a rear of the insulating housing to be soldered with the cable. A side of the shielding shell defines a soldering plate disposed to one side of the insulating housing to be soldered with the cable.
摘要翻译：适于连接在配合连接器和电缆之间的充电连接器包括绝缘壳体，端子和围绕绝缘壳体的屏蔽壳。绝缘壳体具有基体和从基体的顶面向上突出的突出部。绝缘壳体限定端子槽。端子具有位于基体顶面的定位片。定位件的前部限定了设置在端子槽中的接触片，其前端与配合连接器电接触。定位件的后部限定了设置在绝缘壳体的后部以与电缆焊接的焊件。屏蔽壳的一侧限定了一个焊接板，该焊盘设置在待与电缆焊接的绝缘壳体的一侧。

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