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1. 发明授权

US08551290B2 Apparatus for substrate processing with fluid 有权
标题翻译：用流体衬底处理的装置
公开(公告)号：US08551290B2
公开(公告)日：2013-10-08
申请号：US12243254
申请日：2008-10-01
申请人： Yi-Cheng Wang
发明人： Yi-Cheng Wang
IPC分类号： B65G47/22
CPC分类号： H01L21/67051 , H01L21/6708
摘要： An apparatus for substrate processing, mainly includes a processing unit and a fluid supply unit. The processing unit includes a platform for laying a substrate. The platform includes a plurality of injection holes defined thereon, the injection holes obliquely and downwardly extend from a top surface of the platform. The fluid supply unit includes a plurality of containers containing fluids for supplying to the processing unit and fluid-connected to the injection holes of the platform. The fluids from the fluid supply unit can be obliquely injected out from the injection holes and slightly floats and moves the substrate over the platform and reacts with the substrate.
摘要翻译：一种基板处理装置，主要包括处理单元和流体供给单元。处理单元包括用于铺设基板的平台。平台包括限定在其上的多个喷射孔，喷射孔从平台的顶表面倾斜地向下延伸。流体供应单元包括多个容器，其容纳用于供给到处理单元并流体连接到平台的喷射孔的流体。来自流体供应单元的流体可以从注射孔倾斜地注入并稍微漂浮并将基底移动到平台上并与基底反应。

2. 发明授权

US10242863B2 Substrate processing apparatus 有权
公开(公告)号：US10242863B2
公开(公告)日：2019-03-26
申请号：US15283923
申请日：2016-10-03
申请人： WET Technology Co., Ltd. , Yi-Cheng Wang
发明人： Yi-Cheng Wang
IPC分类号： H01L21/02 , H01L21/768 , H01L21/683 , H01L21/67
摘要： A substrate processing apparatus for processing a wafer including a temporary substrate and a semiconductor device. The substrate processing apparatus includes a first half portion, a second half portion and a liquid supply unit. The first half portion includes a working platform. The second half portion includes an upper cover having a first surface and a plurality of second holes. The liquid supply unit provides a liquid. The wafer is placed on the working platform, and a second surface of the semiconductor device and the first surface are spaced by a distance sufficient for allowing the liquid to come into contact with the first surface when the liquid flows at the second surface to generate a suction force on the second surface. As such, a peel force is formed between the temporary substrate and the semiconductor device to cause the two to separate from each other.

3. 发明申请

US20180096837A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180096837A1
公开(公告)日：2018-04-05
申请号：US15283923
申请日：2016-10-03
申请人： Yi-Cheng Wang , WET Technology Co., Ltd.
发明人： Yi-Cheng Wang
IPC分类号： H01L21/02 , H01L21/768
CPC分类号： H01L21/02068 , H01L21/67 , H01L21/6835 , H01L21/76814 , H01L2221/68381
摘要： A substrate processing apparatus for processing a wafer including a temporary substrate and a semiconductor device. The substrate processing apparatus includes a first half portion, a second half portion and a liquid supply unit. The first half portion includes a working platform. The second half portion includes an upper cover having a first surface and a plurality of second holes. The liquid supply unit provides a liquid. The wafer is placed on the working platform, and a second surface of the semiconductor device and the first surface are spaced by a distance sufficient for allowing the liquid to come into contact with the first surface when the liquid flows at the second surface to generate a suction force on the second surface. As such, a peel force is formed between the temporary substrate and the semiconductor device to cause the two to separate from each other.

4. 发明申请

US20060113602A1 MOS circuit arrangement 审中-公开
标题翻译： MOS电路布置
公开(公告)号：US20060113602A1
公开(公告)日：2006-06-01
申请号：US10999722
申请日：2004-11-29
申请人： Cheng-Yu Fang , Wei-Jung Chen , Sheng-Ti Lee , Chien-Peng Yu , Yi-Cheng Wang
发明人： Cheng-Yu Fang , Wei-Jung Chen , Sheng-Ti Lee , Chien-Peng Yu , Yi-Cheng Wang
IPC分类号： H01L29/94
CPC分类号： H01L27/0266 , H01L29/78
摘要： A MOS circuit arrangement includes a silicon substrate, a semiconductor device, a field oxide layer, and a poly-protective layer. The silicon substrate has a conductive doping incorporated therein, wherein the semiconductor device is electrically connected with the silicon substrate. The field oxide layer is formed on the silicon substrate at a position spaced apart from the terminal of the semiconductor device to form an active region between the field oxide layer and the semiconductor device. The poly-protective layer deposited on the active region to communicate the field oxide layer with the terminal of the semiconductor device, wherein the poly-protective layer provides a junction breakdown path between the semiconductor device and the silicon substrate to increase a junction breakdown voltage of the semiconductor device.
摘要翻译： MOS电路装置包括硅衬底，半导体器件，场氧化物层和多保护层。硅衬底具有掺入其中的导电掺杂，其中半导体器件与硅衬底电连接。场氧化物层形成在硅衬底上与半导体器件的端子间隔开的位置处，以在场氧化物层和半导体器件之间形成有源区。沉积在有源区上的多晶硅保护层将场氧化物层与半导体器件的端子连通，其中多晶硅保护层在半导体器件和硅衬底之间提供结击穿通路径，以增加晶体管的击穿电压半导体器件。

5. 发明申请

US20050115672A1 Chemical etching process and system 审中-公开
标题翻译：化学蚀刻工艺和系统
公开(公告)号：US20050115672A1
公开(公告)日：2005-06-02
申请号：US10494107
申请日：2001-03-25
申请人： Yi-Cheng Wang
发明人： Yi-Cheng Wang
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01L21/67253
摘要： A chemical etching process and apparatus includes a control unit, an etching unit, an etchant supply unit and an air supply unit. The control unit has a programmable electronic device through which various process parameters are input to control the operations of the etching unit, the etchant supply unit and the air supply unit. The etching unit has an etching table incorporated with the etchant supply unit and the air supply unit for providing a proper etching environment for a working object to be etched. The etchant supply unit is equipped with flow control valves and electromagnetic valves respectively for controlling the flow rate and the on/off operation of etchant supply through the control unit. Also, the air supply unit is equipped with flow control valves and electromagnetic valves respectively for controlling the flow rate and the on/off operation of air supply through the control unit.
摘要翻译：化学蚀刻工艺和设备包括控制单元，蚀刻单元，蚀刻剂供应单元和空气供应单元。控制单元具有可编程电子设备，通过该可编程电子设备输入各种工艺参数以控制蚀刻单元，蚀刻剂供应单元和空气供应单元的操作。蚀刻单元具有与蚀刻剂供应单元和空气供应单元结合的蚀刻台，用于为要蚀刻的工作对象提供适当的蚀刻环境。蚀刻剂供应单元分别配备有流量控制阀和电磁阀，用于控制通过控制单元的蚀刻剂供应的流量和开/关操作。此外，供气单元分别配备有流量控制阀和电磁阀，用于控制通过控制单元的空气供给的流量和开/关操作。

6. 发明申请

US20070175585A1 System and method for manufacturing process with fluid 审中-公开
标题翻译：用流体制造工艺的系统和方法
公开(公告)号：US20070175585A1
公开(公告)日：2007-08-02
申请号：US11342550
申请日：2006-01-31
申请人： Yi-Cheng Wang
发明人： Yi-Cheng Wang
IPC分类号： H01L21/306
CPC分类号： H01L21/67051 , H01L21/6708
摘要： A system and a method for manufacturing process is provided, in which the fluid used to process the processed component is also used to move the processed component through the steps during the process. The system includes a chemical supply unit, a processing platform, and a control unit. The chemical supply unit is a device for supplying a chemical fluid to react with the processed component, as well as clean water or air that may be required in the process. The processing platform receives the chemical fluid, water and air from the chemical supply unit and provides a processing environment to process the processed component. The processing platform is designed to work with the chemical supply unit so that the chemical fluid can be supplied to the processing platform to move and react with the processed component. The control unit is a programmable electronic device. The control unit controls the operations of both the chemical supply unit and the processing platform by inputting the parameters required for the manufacturing process.
摘要翻译：提供了一种用于制造工艺的系统和方法，其中用于处理经处理的部件的流体也用于在处理过程中通过步骤移动经处理的部件。该系统包括一个化学品供应单元，一个处理平台和一个控制单元。化学品供应单元是用于供应化学流体以与处理的组分反应的装置，以及在该过程中可能需要的清洁的水或空气。处理平台从化学品供应单元接收化学液体，水和空气，并提供加工处理环境。处理平台设计用于与化学品供应单元配合使用，可将化学液体供应至处理平台，以与处理过的部件一起移动和反应。控制单元是可编程电子设备。控制单元通过输入制造过程所需的参数来控制化学品供应单元和处理平台的操作。

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