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1. 发明授权

US5981404A Multilayer ONO structure 失效
标题翻译：多层ONO结构
公开(公告)号：US5981404A
公开(公告)日：1999-11-09
申请号：US857734
申请日：1997-05-16
申请人： Yi Chung Sheng , Yi Chih Lim , Ming Hua Liu , Ming-Tzong Yang
发明人： Yi Chung Sheng , Yi Chih Lim , Ming Hua Liu , Ming-Tzong Yang
IPC分类号： H01L21/28 , H01L21/314 , H01L29/51 , H01L29/68
CPC分类号： H01L21/28202 , H01L21/28238 , H01L21/3145 , H01L29/513 , H01L29/518 , Y10S438/954
摘要： Dielectric structures of the type that might be used in DRAMs, other memory devices, and integrated thin film transistors include repeated silicon oxide/silicon nitride layers. For example, the dielectric structure may have a silicon oxide/silicon nitride/silicon oxide/silicon nitride/silicon oxide or "ONONO" layer structure. Such repeated layer structures exhibit higher levels of breakdown voltage than more conventional "ONO" structures. Most of the growth of the five layer ONONO or more complicated dielectric structure can be accomplished in a single furnace through a series of temperature steps performed under different gas ambients. A substrate having a polysilicon lower electrode is introduced to a furnace and a lowest layer of silicon oxide is grown on the polysilicon electrode in an ammonia ambient. A first silicon nitride layer is grown in NH.sub.3 and SiH.sub.2 Cl.sub.2 and then growth of the first silicon nitride layer is interrupted by first altering or stopping the flow of reaction gases and then growing an intermediate silicon oxide layer on the first silicon nitride layer, again in an ammonia ambient. A second silicon nitride layer is then formed by reintroducing the same combination of processing gases. Growth of the second silicon nitride layer is then interrupted, and either additional repetitions of the silicon oxide/silicon nitride layer structure are formed or a surface layer of silicon oxide is grown in a steam or wet oxygen ambient.
摘要翻译：可能用于DRAM，其他存储器件和集成薄膜晶体管的类型的介质结构包括重复的氧化硅/氮化硅层。例如，电介质结构可以具有氧化硅/氮化硅/氧化硅/氮化硅/氧化硅或“ONONO”层结构。这种重复的层结构表现出比更传统的“ONO”结构更高的击穿电压水平。通过在不同气体环境下进行的一系列温度步骤，可以在单个炉中实现五层ONONO或更复杂的电介质结构的大部分生长。将具有多晶硅下电极的基板引入炉中，并且在氨气氛中在多晶硅电极上生长最低层的氧化硅。第一氮化硅层生长在NH 3和SiH 2 Cl 2中，然后通过首先改变或停止反应气体的流动然后在第一氮化硅层上再生长中间氧化硅层，从而中断第一氮化硅层的生长氨气。然后通过重新引入相同的处理气体组合来形成第二氮化硅层。然后中断第二氮化硅层的生长，并且形成氧化硅/氮化硅层结构的附加重复，或者在蒸汽或湿氧环境中生长氧化硅的表面层。

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