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1. 发明授权

US5633189A Method of making metal to metal antifuse 失效
标题翻译：制造金属对金属反熔丝的方法
公开(公告)号：US5633189A
公开(公告)日：1997-05-27
申请号：US425122
申请日：1995-04-18
申请人： Yeouchung Yen , Shih-Oh Chen
发明人： Yeouchung Yen , Shih-Oh Chen
IPC分类号： H01L23/525 , H01L21/70
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed by means of collimated sputter deposition in the antifuse cell opening to form a layer of uniform thickness existing only within the antifuse cell opening in order to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer and optionally formed by collimated sputter deposition, and a top electrode disposed over the second barrier metal layer.
摘要翻译：本发明的反熔丝结构包括底部平面化电极，设置在底部电极上的ILD，暴露底部电极的ILD中和穿过暴露底部电极的ILD的反熔丝电池，通过反熔丝中的准直溅射沉积设置的第一阻挡金属层电池开口以形成仅在反熔丝电池开口内存在的均匀厚度的层，以便防止反熔丝材料层从底部电极扩散并形成减小面积的有效底部电极，从而降低器件的电容，反熔丝材料层设置在第一阻挡金属层的反熔丝电池开口中，第二阻挡金属层设置在反熔丝材料层上并且任选地通过准直的溅射沉积形成;以及顶部电极，设置在第二阻挡金属层上。

2. 发明授权

US5663091A Method for fabricating an electrically programmable antifuse 失效
标题翻译：制造电可编程反熔丝的方法
公开(公告)号：US5663091A
公开(公告)日：1997-09-02
申请号：US644335
申请日：1996-05-09
申请人： Yeouchung Yen , Shih-Oh Chen , Hung-Kwei Hu
发明人： Yeouchung Yen , Shih-Oh Chen , Hung-Kwei Hu
IPC分类号： H01L23/525 , H01L21/70 , H01L27/00
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： A method for fabricating the antifuse of the present invention comprises the steps of forming a lower antifuse electrode; forming a relatively thick interlayer dielectric layer over the surface of the lower antifuse electrode; forming a masking layer, preferably a photoresist, including an aperture therein having a first area over the interlayer dielectric layer; performing a first vertical etching step on the interlayer dielectric layer to a first selected depth; enlarging the aperture in the masking layer until it has a second area; performing a final vertical etching step on the interlayer dielectric layer to expose the upper surface of the lower electrode. Depending on the thickness of the interlayer dielectric, additional enlarging steps and vertical etching steps may be performed prior to the final vertical etching step which exposes the upper surface of the lower electrode. An aperture having a staircase profile is thereby formed, the aperture having a number of steps thus reducing and/or eliminating cusping and/or thinning at the corner and bottom of the antifuse cell opening allowing for the uniform deposit of dielectric and upper antifuse electrode materials.
摘要翻译：制造本发明的反熔丝的方法包括以下步骤：形成下反熔丝电极; 在所述下部反熔丝电极的表面上形成相对较厚的层间电介质层; 形成掩模层，优选光致抗蚀剂，包括其中具有在所述层间介质层上的第一区域的孔; 在所述层间电介质层上进行第一垂直蚀刻步骤至第一选定深度; 扩大掩模层中的孔径，直到其具有第二区域; 在层间电介质层上进行最终的垂直蚀刻步骤以暴露下电极的上表面。取决于层间电介质的厚度，可以在暴露下电极的上表面的最终垂直蚀刻步骤之前执行附加的放大步骤和垂直蚀刻步骤。由此形成具有阶梯轮廓的孔，所述孔具有多个步骤，从而减少和/或消除了在反熔丝电池开口的角落和底部的捣实和/或变薄，从而均匀地沉积介电层和上部反熔丝电极材料。

3. 发明授权

US5550404A Electrically programmable antifuse having stair aperture 失效
标题翻译：电可编程反熔丝具有开启孔径
公开(公告)号：US5550404A
公开(公告)日：1996-08-27
申请号：US292801
申请日：1994-08-10
申请人： Yeouchung Yen , Shih-Oh Chen , Hung-Kwei Hu
发明人： Yeouchung Yen , Shih-Oh Chen , Hung-Kwei Hu
IPC分类号： H01L23/525 , H01L29/04 , H01L27/10 , H01L29/00
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011
摘要： An antifuse comprises a lower electrode and an upper electrode separated by an interlayer dielectric. An antifuse cell opening is disposed in the interlayer dielectric. The antifuse cell opening comprises at least two steps, wherein a first portion thereof has a first area and a second portion thereof disposed above the first portion has a second area larger than said first area. Additional portions may be provided above the second portion having successively larger areas if the thickness of the interlayer dielectric warrants their inclusion.
摘要翻译：反熔丝包括由层间电介质隔开的下电极和上电极。反熔丝电池开口设置在层间电介质中。反熔丝电池开口包括至少两个步骤，其中其第一部分具有第一区域，并且设置在第一部分上方的第二部分具有大于所述第一区域的第二区域。如果层间电介质的厚度保证其包含，则可以在第二部分上方设置附加部分，其具有相继较大的面积。

4. 发明授权

US5543656A Metal to metal antifuse 失效
标题翻译：金属对金属反熔丝
公开(公告)号：US5543656A
公开(公告)日：1996-08-06
申请号：US328247
申请日：1994-10-24
申请人： Yeouchung Yen , Shih-Oh Chen
发明人： Yeouchung Yen , Shih-Oh Chen
IPC分类号： H01L21/768 , H01L23/525 , H01L23/532 , H01L23/48 , H01L27/02 , H01L29/46 , H01L29/62
CPC分类号： H01L23/53223 , H01L23/5252 , H01L2924/0002
摘要： The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed by means of collimated sputter deposition in the antifuse cell opening to form a layer of uniform thickness existing only within the antifuse cell opening in order to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer and optionally formed by collimated sputter deposition, and a top electrode disposed over the second barrier metal layer.
摘要翻译：本发明的反熔丝结构包括底部平面化电极，设置在底部电极上的ILD，暴露底部电极的ILD中和穿过暴露底部电极的ILD的反熔丝电池，通过反熔丝中的准直溅射沉积设置的第一阻挡金属层电池开口以形成仅在反熔丝电池开口内存在的均匀厚度的层，以便防止反熔丝材料层从底部电极扩散并形成减小面积的有效底部电极，从而降低器件的电容，反熔丝材料层设置在第一阻挡金属层的反熔丝电池开口中，第二阻挡金属层设置在反熔丝材料层上并且任选地通过准直的溅射沉积形成;以及顶部电极，设置在第二阻挡金属层上。

5. 发明授权

US5411917A Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayer 失效
标题翻译：电可编程反熔丝结合电介质和非晶硅中间层
公开(公告)号：US5411917A
公开(公告)日：1995-05-02
申请号：US4912
申请日：1993-01-19
申请人： Abdul R. Forouhi , John L. McCollum , Shih-Oh Chen
发明人： Abdul R. Forouhi , John L. McCollum , Shih-Oh Chen
IPC分类号： H01L27/10 , H01L21/82 , H01L21/822 , H01L21/8247 , H01L23/525 , H01L23/532 , H01L27/04 , H01L27/115 , H01L21/44
CPC分类号： H01L23/5252 , H01L23/53223 , H01L2924/0002 , H01L2924/3011 , Y10S148/055
摘要： An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first electrode, a first dielectric layer disposed over the lower first electrode, a layer of amorphous silicon disposed above the first dielectric layer, a second dielectric layer disposed above the amorphous silicon layer, and an upper second electrode disposed above the second dielectric layer.
摘要翻译：反熔丝可以被制造为集成电路的一部分，位于位于半导体衬底上方并与半导体衬底绝缘的层中。反熔丝包括下部第一电极，设置在下部第一电极上的第一电介质层，设置在第一电介质层上方的非晶硅层，设置在非晶硅层上方的第二电介质层，以及设置在第一电极上方的上部第二电极第二电介质层。

6. 发明授权

US5087958A Misalignment tolerant antifuse 失效
标题翻译：不对抗容错的反熔丝
公开(公告)号：US5087958A
公开(公告)日：1992-02-11
申请号：US609177
申请日：1990-11-05
申请人： Shih-Oh Chen , Steve S. Chiang , Gregory W. Bakker
发明人： Shih-Oh Chen , Steve S. Chiang , Gregory W. Bakker
IPC分类号： H01L21/82 , H01L23/525
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： A misalignment tolerant antifuse includes a lower electrode, bounded by a relatively thick first insulating layer, an upper electrode separated from the lower electrode by a second insulating layer having a thickness less than that of the first insulating layer, a pair of antifuse window regions in the second insulating layer, abutting the first insulating layer on opposite sides of the lower electrode, the insulating material in the window regions being thinner than the remainder of the second insulating layer, and an upper electrode disposed above the second insulating layer and lying over the pair of regions and at least a portion of the first insulating layer.

7. 发明授权

US6001693A Method of making a metal to metal antifuse 失效
标题翻译：制造金属对金属反熔丝的方法
公开(公告)号：US6001693A
公开(公告)日：1999-12-14
申请号：US999970
申请日：1995-09-01
申请人： Yen Yeouchung , Shih-Oh Chen , Leuh Fang , Elaine K. Poon , James B. Kruger
发明人： Yen Yeouchung , Shih-Oh Chen , Leuh Fang , Elaine K. Poon , James B. Kruger
IPC分类号： H01L23/525 , H01L21/82
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed in the antifuse cell opening to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer, and a top electrode disposed over the second barrier metal layer.
摘要翻译：本发明的反熔丝结构包括底部平面化电极，设置在底部电极上的ILD，暴露底部电极的ILD中和穿过ILD的反熔丝电池;设置在反熔丝电池开口中的第一阻挡金属层，以保护反熔丝材料层从底部电极扩散并形成减小面积的有效底部电极，因此降低了器件的电容，设置在反熔丝电池开口中并在第一阻挡金属层上方的反熔丝材料层，第二阻挡金属层设置在反熔丝材料层之上，以及设置在第二阻挡金属层上的顶电极。

8. 发明授权

US5541441A Metal to metal antifuse 失效
标题翻译：金属对金属反熔丝
公开(公告)号：US5541441A
公开(公告)日：1996-07-30
申请号：US319170
申请日：1994-10-06
申请人： Yen Yeuochung , Shih-Oh Chen , Leuh Fang , Elaine K. Poon , James B. Kruger
发明人： Yen Yeuochung , Shih-Oh Chen , Leuh Fang , Elaine K. Poon , James B. Kruger
IPC分类号： H01L23/525 , H01L29/08
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed in the antifuse cell opening to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer, and a top electrode disposed over the second barrier metal layer.
摘要翻译：本发明的反熔丝结构包括底部平面化电极，设置在底部电极上的ILD，暴露底部电极的ILD中和穿过ILD的反熔丝电池;设置在反熔丝电池开口中的第一阻挡金属层，以保护反熔丝材料层从底部电极扩散并形成减小面积的有效底部电极，因此降低了器件的电容，设置在反熔丝电池开口中并在第一阻挡金属层上方的反熔丝材料层，第二阻挡金属层设置在反熔丝材料层之上，以及设置在第二阻挡金属层上的顶电极。

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