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1. 发明申请

US20120171805A1 METHOD OF FABRICATING A SOLAR CELL 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120171805A1
公开(公告)日：2012-07-05
申请号：US13049886
申请日：2011-03-16
申请人： Yen-Cheng Hu , Cheng-Chang Kuo , Jun-Wei Chen , Hsin-Feng Li , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Cheng-Chang Kuo , Jun-Wei Chen , Hsin-Feng Li , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/18
CPC分类号： H01L31/068 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.
摘要翻译：提供一种制造太阳能电池的方法。提供具有第一表面和第二表面的第一类型的半导体衬底。在第一类型半导体衬底的部分中形成第二类型的掺杂扩散区。第二类掺杂扩散区从第一表面在第一类型半导体衬底内延伸。在第一表面上形成与第二类掺杂扩散区接触的抗反射涂层（ARC）。在ARC上形成包括导电颗粒和掺杂剂的导电浆料。执行用于使导电浆料穿透ARC以形成嵌入ARC中的第一接触导体的共烧制方法。在共烧制过程中，掺杂剂扩散到第二类掺杂扩散区，形成第二类重掺杂扩散区。第二接触导体形成在第二表面上。

2. 发明申请

US20120138127A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120138127A1
公开(公告)日：2012-06-07
申请号：US13038388
申请日：2011-03-02
申请人： Cheng-Chang Kuo , Yen-Cheng Hu , Hsin-Feng Li , Tsung-Pao Chen , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Cheng-Chang Kuo , Yen-Cheng Hu , Hsin-Feng Li , Tsung-Pao Chen , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/06 , H01L31/0232
CPC分类号： H01L31/1864 , H01L31/022441 , H01L31/02363 , H01L31/0682 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell and a manufacturing method thereof are provided. A laser doping process is adopted to form positive and negative doping regions for an accurate control of the doping regions. No metal contact coverage issue arises since a contact opening is formed by later firing process. The solar cell is provided with a comb-like first electrode, a sheet-like second electrode corresponding to the doping regions to obtain high photoelectric conversion efficiency by fully utilizing the space in the semiconductor substrate. Furthermore, the sheet-like second electrode can be formed by a material having high reflectivity to improve the light utilization rate of the solar cell. The manufacturing process of the solar cell is simplified and the processing yield is improved.
摘要翻译：提供太阳能电池及其制造方法。采用激光掺杂工艺形成正掺杂区和负掺杂区，用于精确控制掺杂区。由于通过稍后的烧制工艺形成接触开口，所以不会出现金属接触覆盖问题。太阳能电池设置有梳状的第一电极，对应于掺杂区域的片状的第二电极，通过充分利用半导体衬底中的空间来获得高的光电转换效率。此外，片状第二电极可以由具有高反射率的材料形成，以提高太阳能电池的光利用率。太阳能电池的制造过程简化，加工成品率提高。

3. 发明申请

US20130312820A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20130312820A1
公开(公告)日：2013-11-28
申请号：US13602625
申请日：2012-09-04
申请人： Yen-Cheng HU , Wei-Shuo Ho , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Yen-Cheng HU , Wei-Shuo Ho , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/0232 , H01L31/0236
CPC分类号： H01L31/02168 , Y02E10/50
摘要： A solar cell includes a semiconductor substrate and a first antireflective layer. The semiconductor substrate has a first-type semiconductor surface and a second-type semiconductor surface opposite to each other. The first antireflective layer includes a plurality of refraction convexes and a coverage layer. The refraction convexes are formed on the second-type semiconductor surface. Each refraction convex includes a first refraction part and a second refraction part. The first refraction parts are conformally coated with the respective second refraction parts, and the first refraction part is configured to have a refractive index greater than the refractive index of the second refraction part. The coverage layer is formed to cover the second-type semiconductor surface and the refraction convexes, and the coverage layer is configured to have a refractive index smaller than the refractive index of the second refraction part. A solar cell manufacturing method is also provided.
摘要翻译：太阳能电池包括半导体衬底和第一抗反射层。半导体衬底具有彼此相对的第一类型半导体表面和第二类型半导体表面。第一抗反射层包括多个折射凸部和覆盖层。折射凸部形成在第二类半导体表面上。每个折射凸包括第一折射部分和第二折射部分。第一折射部分被共同地涂覆有相应的第二折射部分，并且第一折射部分被配置为具有大于第二折射部分的折射率的折射率。覆盖层形成为覆盖第二类型的半导体表面和折射凸起，并且覆盖层被配置为具有小于第二折射部分的折射率的折射率。还提供了一种太阳能电池的制造方法。

4. 发明授权

US08338217B2 Method of fabricating a solar cell 有权
标题翻译：制造太阳能电池的方法
公开(公告)号：US08338217B2
公开(公告)日：2012-12-25
申请号：US13049886
申请日：2011-03-16
申请人： Yen-Cheng Hu , Cheng-Chang Kuo , Jun-Wei Chen , Hsin-Feng Li , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Cheng-Chang Kuo , Jun-Wei Chen , Hsin-Feng Li , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/18
CPC分类号： H01L31/068 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.
摘要翻译：提供一种制造太阳能电池的方法。提供具有第一表面和第二表面的第一类型的半导体衬底。在第一类型半导体衬底的部分中形成第二类型的掺杂扩散区。第二类掺杂扩散区从第一表面在第一类型半导体衬底内延伸。在第一表面上形成与第二类掺杂扩散区接触的抗反射涂层（ARC）。在ARC上形成包括导电颗粒和掺杂剂的导电浆料。执行用于使导电浆料穿透ARC以形成嵌入ARC中的第一接触导体的共烧制方法。在共烧制过程中，掺杂剂扩散到第二类掺杂扩散区，形成第二类重掺杂扩散区。第二接触导体形成在第二表面上。

5. 发明授权

US08334163B1 Method of forming solar cell 有权
标题翻译：形成太阳能电池的方法
公开(公告)号：US08334163B1
公开(公告)日：2012-12-18
申请号：US13439879
申请日：2012-04-05
申请人： Yen-Cheng Hu , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Yen-Cheng Hu , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L21/00
CPC分类号： H01L21/2225 , H01L21/2254 , H01L31/022425 , H01L31/02363 , H01L31/0288 , H01L31/068 , Y02E10/547
摘要： A method of forming solar cell includes forming a doping paste on a first surface of a semiconductor substrate to form a selective emitter, to render the selective emitter a non-textured surface, and forming a texturing barrier layer on a second surface of the semiconductor substrate to render the second surface a non-textured surface.
摘要翻译：一种形成太阳能电池的方法包括在半导体衬底的第一表面上形成掺杂膏以形成选择性发射极，使选择性发射极成为非纹理表面，并在半导体衬底的第二表面上形成纹理阻挡层以使第二表面成为非纹理表面。

6. 发明申请

US20120264253A1 METHOD OF FABRICATING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20120264253A1
公开(公告)日：2012-10-18
申请号：US13190498
申请日：2011-07-26
申请人： Ming-Hui Chiu , Shih-Hsien Yang , Yen-Cheng Hu , Yu-Chun Chen , Tsung-Pao Chen , Kuan-Chen Wang , Jen-Chieh Chen , Zhen-Cheng Wu
发明人： Ming-Hui Chiu , Shih-Hsien Yang , Yen-Cheng Hu , Yu-Chun Chen , Tsung-Pao Chen , Kuan-Chen Wang , Jen-Chieh Chen , Zhen-Cheng Wu
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/0288 , H01L31/02963 , H01L31/0323 , H01L31/068 , H01L31/1804 , H01L31/1828 , Y02E10/541 , Y02E10/543 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a solar cell is provided. A first type substrate having a first surface and a second surface is provided. A first doping process is performed on the first surface of the first type substrate by using a first dopant, so as to form a first type lightly doped layer. A second doping process is performed on a portion of the first type lightly doped layer by using a second dopant, so as to form a second type heavily doped region. A molecular weight of the second dopant is larger than a molecular weight of the first dopant, and a temperature of the first doping process is higher than a temperature of the second doping process. A first electrode is formed on the second type heavily doped region. A second electrode is formed on the second surface of the first type substrate.
摘要翻译：提供一种制造太阳能电池的方法。提供具有第一表面和第二表面的第一类型基底。通过使用第一掺杂剂在第一类型衬底的第一表面上进行第一掺杂工艺，以形成第一类型的轻掺杂层。通过使用第二掺杂剂在第一类型轻掺杂层的一部分上进行第二掺杂工艺，以形成第二类型重掺杂区域。第二掺杂剂的分子量大于第一掺杂剂的分子量，并且第一掺杂工艺的温度高于第二掺杂工艺的温度。在第二种重掺杂区域上形成第一电极。第二电极形成在第一类型基板的第二表面上。

7. 发明申请

US20120097246A1 SOLAR CELL AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20120097246A1
公开(公告)日：2012-04-26
申请号：US13074015
申请日：2011-03-29
申请人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Zhen-Cheng Wu , Shuo-Wei Liang , Jen-Chieh Chen , Chung-Wei Lai , Tsung-Pao Chen
发明人： Chee-Wee Liu , Wei-Shuo Ho , Yen-Yu Chen , Chun-Yuan Ku , Zhen-Cheng Wu , Shuo-Wei Liang , Jen-Chieh Chen , Chung-Wei Lai , Tsung-Pao Chen
IPC分类号： H01L31/036 , H01L31/20
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a crystalline semiconductor substrate; a first crystalline semiconductor layer; an amorphous semiconductor layer; a first metal electrode layer and a second metal electrode layer. The crystalline semiconductor substrate has a first surface and a second surface, and the crystalline semiconductor substrate has a first doped type. The first crystalline semiconductor layer is disposed on the first surface of the crystalline semiconductor substrate, where the first crystalline semiconductor layer has a second doped type contrary to the first doped type. The amorphous semiconductor layer is disposed on the first crystalline semiconductor layer, and the amorphous semiconductor layer has the second doped type. The first metal electrode layer is disposed on the amorphous semiconductor layer. The second metal electrode layer is disposed on the second surface of the crystalline semiconductor substrate.
摘要翻译：太阳能电池包括晶体半导体衬底; 第一晶体半导体层; 非晶半导体层; 第一金属电极层和第二金属电极层。晶体半导体衬底具有第一表面和第二表面，并且晶体半导体衬底具有第一掺杂型。第一晶体半导体层设置在晶体半导体衬底的第一表面上，其中第一晶体半导体层具有与第一掺杂类型相反的第二掺杂型。非晶半导体层设置在第一结晶半导体层上，非晶半导体层具有第二掺杂型。第一金属电极层设置在非晶半导体层上。第二金属电极层设置在晶体半导体衬底的第二表面上。

8. 发明授权

US08605022B2 Image displaying method for display device 有权
公开(公告)号：US08605022B2
公开(公告)日：2013-12-10
申请号：US13275419
申请日：2011-10-18
申请人： Jen-Chieh Chen , Chao-Ching Hsu , Tzu-Hui Hsu
发明人： Jen-Chieh Chen , Chao-Ching Hsu , Tzu-Hui Hsu
IPC分类号： G09G5/02
CPC分类号： G09G3/3614 , G09G3/2044
摘要： An exemplary image displaying method for a display device includes steps of: providing display data to pixels of the display device for displaying images; taking a special amount of frame of images as an image group, making polarities of a same pixel being of adjacent two frame of images in the image group and using a same polarity inversion in the adjacent two frame of images be different from each other, and making polarities of a same pixel being of the last frame of image in a former one of adjacent two image groups and of the first frame of image in a latter one of the adjacent two image groups and using the same polarity inversion in the last and first frame of images be the same with each other.

9. 发明申请

US20080279104A1 METHODS AND SYSTEMS FOR CENTRALIZED LINK POWER MANAGEMENT CONTROL (CLMC) 有权
标题翻译：用于集中式连接电源管理控制（CLMC）的方法和系统
公开(公告)号：US20080279104A1
公开(公告)日：2008-11-13
申请号：US11836833
申请日：2007-08-10
申请人： Jen-Chieh Chen , Chung-Che Wu
发明人： Jen-Chieh Chen , Chung-Che Wu
IPC分类号： H04L12/26
CPC分类号： H04L43/0817 , G06F1/3215 , G06F1/324 , G06F1/3253 , H04L41/0833 , Y02D10/126 , Y02D10/151
摘要： A method for centralized link power management control (CLMC), performed by a north-bridge of a processing unit, comprises the following steps. A data transmission status of a bus is monitored. CLMC is activated to configure devices corresponding to the bus in order to speed up data transmission of the bus when detecting that the data transmission status of the bus is continually busy. CLMC is activated to configure devices corresponding to the bus in order to slow down data transmission of the bus when detecting that the data transmission status of the bus is continually idle.
摘要翻译：由处理单元的北桥执行的集中式链路功率管理控制（CLMC）的方法包括以下步骤。监视总线的数据传输状态。激活CLMC以配置对应于总线的设备，以便在检测到总线的数据传输状态持续繁忙时加速总线的数据传输。当检测到总线的数据传输状态持续空闲时，CLMC被激活以配置对应于总线的设备，以便减慢总线的数据传输。

10. 发明申请

US20080178026A1 COMPUTER SYSTEM AND POWER SAVING METHOD THEREOF 有权
标题翻译：计算机系统及其节能方法
公开(公告)号：US20080178026A1
公开(公告)日：2008-07-24
申请号：US11626622
申请日：2007-01-24
申请人： Jen-Chieh Chen
发明人： Jen-Chieh Chen
IPC分类号： G06F1/32
CPC分类号： G06F1/3203 , G06F1/3246 , G06F1/3253 , G06F1/3287 , Y02D10/151 , Y02D10/171
摘要： A power saving method is disclosed. A halt instruction is issued to enable transition from an operational state to a power saving state. The processor broadcasts a message to a chipset. The chipset receives the sleep message and enters a power saving state, and asserts a hardware pin to disable a data bus connecting the processor and the chipset. It is determined whether a request for data transaction required during the power saving process is issued to the chipset. If the request is issued to the chipset, the chipset deasserts the hardware pin to enable the data bus, transmits the request to the processor; and, when data transaction is complete, asserts the hardware pin by the chipset to disable the data bus.
摘要翻译：公开了省电方法。发出停止指令以使得能够从操作状态转换到省电状态。处理器向芯片组广播消息。芯片组接收到睡眠消息并进入省电状态，并断言硬件引脚禁用连接处理器和芯片组的数据总线。确定在功率节省过程中是否向芯片组发出对数据交易的请求。如果请求被发送到芯片组，则芯片组将硬件引脚置为无效，使能数据总线，将该请求发送给处理器; 并且当数据事务完成时，由芯片组断言硬件引脚以禁止数据总线。

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