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    • 4. 发明授权
    • Memory error detecting apparatus and method
    • 存储器错误检测装置和方法
    • US08738976B2
    • 2014-05-27
    • US13163606
    • 2011-06-17
    • Rikizo NakanoOsamu IshibashiSadao Miyazaki
    • Rikizo NakanoOsamu IshibashiSadao Miyazaki
    • G11C29/00
    • G11C29/44G11C5/00G11C5/04G11C29/56G11C2029/4002
    • A memory error detecting apparatus for detecting an error of a subject memory, the memory error detecting apparatus includes a memory bus connected to the subject memory, a mirror memory connected to the memory bus so as to receive the same data as data to be written into and read from the subject memory, the received data being written into the mirror memory, an address acquiring portion configured to acquire an address related to the data written into the subject memory, a mirror memory controller configured to control data writing or reading to or from the mirror memory on the basis of the acquired address, a comparator configured to compare data read from the subject memory and data read from the mirror memory, and an error detector configured to detect a data error on the basis of a result of the comparison.
    • 一种用于检测对象存储器的错误的存储器错误检测装置,所述存储器错误检测装置包括连接到所述对象存储器的存储器总线,连接到所述存储器总线的镜像存储器,以便接收与要写入的数据相同的数据 从所述主体存储器读取所接收的数据被写入所述镜像存储器,地址获取部分,被配置为获取与写入所述对象存储器的数据相关的地址;镜像存储器控制器,被配置为控制数据写入或读取; 基于所获取的地址的镜像存储器,比较器,被配置为比较从所述对象存储器读取的数据和从所述镜像存储器读取的数据;以及错误检测器,被配置为基于所述比较的结果来检测数据错误。
    • 5. 发明授权
    • Memory controlling apparatus and method
    • 存储器控制装置及方法
    • US08495463B2
    • 2013-07-23
    • US12725893
    • 2010-03-17
    • Sadao MiyazakiOsamu IshibashiRikizo Nakano
    • Sadao MiyazakiOsamu IshibashiRikizo Nakano
    • G11C29/00
    • G11C29/44G11C5/04G11C29/4401G11C29/76G11C2029/0407G11C2029/1208
    • A memory control device is provided. The memory control device is configured to control access to a storage device including a plurality of storage areas. The memory control device includes a defect detecting unit configured to detect a defective area of a storage area into which data may not be stored. The memory control device also includes a storage processing unit configured to store defect information including address information of the defective area detected using the defect detecting unit into a memory area. A data writing unit is also included in the memory control device. The data writing unit is configured to write data, which has been written into the defective area, into a storage area other than the storage area comprising the defective area based on the defect information stored using the storage processing unit.
    • 提供存储器控制装置。 存储器控制装置被配置为控制对包括多个存储区域的存储装置的访问。 存储器控制装置包括:缺陷检测单元,被配置为检测可能不存储数据的存储区域的缺陷区域。 存储器控制装置还包括:存储处理单元,被配置为将包括使用缺陷检测单元检测到的缺陷区域的地址信息的缺陷信息存储到存储区域中。 数据写入单元也包括在存储器控制装置中。 数据写入单元被配置为基于使用存储处理单元存储的缺陷信息将已写入缺陷区域的数据写入除了包括缺陷区域的存储区域之外的存储区域中。
    • 6. 发明授权
    • Optical switch
    • 光开关
    • US08400703B2
    • 2013-03-19
    • US12663398
    • 2008-06-18
    • Eiji AkiyamaFujio OkumuraOsamu Ishibashi
    • Eiji AkiyamaFujio OkumuraOsamu Ishibashi
    • G02B26/00G02F1/01G02F1/03G02F1/07
    • G02F1/29G02F1/292G02F2201/122G02F2202/20
    • An optical switch for switching between transmission and total reflection of incident light 101 applied to electro-optical crystal 104 by applying an electric field to electro-optical crystal 104 to thereby change the refractive index of electro-optical crystal 104 includes a plurality of electrodes 105 disposed in electro-optical crystal 104 to provide electrode assembly 106 for applying the electric field to electro-optical crystal 104. Electro-optical crystal 104 has a refractive index changing portion (not shown) whose refractive index is changed by the electric field applied by electrode assembly 106, the refractive index changing portion enclosing electrode assembly 106 in its entirety. The refractive index changing portion has a flat refractive index boundary.
    • 用于通过向电光晶体104施加电场以改变电光晶体104的折射率而将施加到电光晶体104的入射光101的透射和全反射之间切换的光开关包括多个电极105 设置在电光晶体104中以提供用于将电场施加到电光晶体104的电极组件106.电光晶体104具有折射率变化部分(未示出),其折射率由施加的电场的折射率改变 电极组件106,整体折射率变化部分包围电极组件106。 折射率变化部分具有平坦的折射率边界。
    • 8. 发明申请
    • OPTICAL SWITCH
    • 光开关
    • US20110255148A1
    • 2011-10-20
    • US13140965
    • 2009-12-16
    • Masahiko OhtaOsamu IshibashiFujio Okumura
    • Masahiko OhtaOsamu IshibashiFujio Okumura
    • G02F1/29
    • G02F1/315G02F1/0305G02F1/0316G02F2203/21
    • An optical switch changes the refractive index of an electro-optical crystal according to an electric field applied to the electro-optical crystal so as to switch depending on whether the electro-optical crystal enables incident light to pass through or whether the electro-optical crystal enables incident light to be totally reflected. The optical switch includes an electrode section including a plurality of electrodes and formed in the electro-optical crystal, a principal plane including the largest area of each electrode on a same plane of the electro-optical crystal; an insulator layer on at least one plane of the electro-optical crystal, the plane being parallel with the electrode section, the insulator layer made of an insulator with lower dielectric constant than the electro-optical crystal; and a temperature control device formed on and in contact with the insulator layer and controls a temperature of the electrode section or dissipates heat generated in the electrode section.
    • 光开关根据施加到电光晶体的电场来改变电光晶体的折射率,以根据电光晶体是否使入射光通过,或者电光晶体 使入射光完全反射。 该光开关包括:电极部分,包括多个电极并形成在电光晶体中,包括在电光晶体的同一平面上的每个电极的最大面积的主平面; 在所述电光晶体的至少一个平面上的绝缘体层,所述平面与所述电极部分平行,所述绝缘体层由具有比所述电光晶体低的介电常数的绝缘体制成; 以及形成在绝缘体层上并与绝缘体接触的温度控制装置,并且控制电极部分的温度或散发在电极部分中产生的热量。