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    • 1. 发明授权
    • Method and apparatus for reducing OPC model errors
    • 减少OPC模型误差的方法和装置
    • US07325225B2
    • 2008-01-29
    • US11243933
    • 2005-10-05
    • Yasushi TanakaMasahiro InoharaMatthew Angyal
    • Yasushi TanakaMasahiro InoharaMatthew Angyal
    • G06F17/50
    • G03F1/36G03F1/68
    • It is important to assess and reduce errors that arise in mask correction techniques such as optical proximity correction. A preliminary mask is obtained using an OPC model. An etched wafer is created from the preliminary mask using lithography, and first and second critical dimensions (CD) are measured on the wafer and. An edge placement error (EPE) is determined that corresponds to a difference between a measured value and a desired value of the second CD. These steps are repeated for a plurality of different values of the first CD, and of for each of the values of, the measured value of the second CD is correlated with its corresponding value on the mask as predicted by the OPC model. Δ difference ΔCD is obtained between the difference of the mask CDs calculated by interpolation of wafer CD measurements and by OPC model predictions and is transformed into an OPC model error.
    • 重要的是评估和减少在诸如光学邻近校正的掩模校正技术中出现的错误。 使用OPC模型获得初步掩模。 使用光刻从初步掩模创建蚀刻的晶片,并且在晶片上测量第一和第二临界尺寸(CD)。 确定对应于测量值和第二CD的期望值之间的差的边缘放置误差(EPE)。 对于第一CD的多个不同值重复这些步骤,并且对于每个值,第二CD的测量值与由OPC模型预测的掩模上的对应值相关。 在通过晶片CD测量的插值和OPC模型预测计算出的掩模CD的差异之间获得差值DeltaCD,并将其转换为OPC模型误差。
    • 2. 发明申请
    • Method and apparatus for reducing OPC model errors
    • 减少OPC模型误差的方法和装置
    • US20070079278A1
    • 2007-04-05
    • US11243933
    • 2005-10-05
    • Yasushi TanakaMasahiro InoharaMatthew Angyal
    • Yasushi TanakaMasahiro InoharaMatthew Angyal
    • G06F17/50
    • G03F1/36G03F1/68
    • A method is provided of accessing model error in an optical proximity correction (OPC) model. The method begins by obtaining a preliminary mask using an OPC model, creating an etched wafer from the preliminary mask using lithography, and measuring a specified critical dimension (CD) on the wafer and a second CD on the wafer. An edge placement error (EPE) is determined that corresponds to a difference between a measured value of the second CD on the wafer and a desired value of the second CD on the wafer. The aforementioned steps are repeated for a plurality of different values of the specified CD to obtain an EPE for each of the different values of the specified CD. For each of the plurality of values of the specified CD, a measured value of a second CD on the wafer is correlated with a corresponding value of the second CD on the mask. For each of the plurality of values of the specified CD, the measured value of the second CD on the wafer is correlated with its corresponding value of the second CD on the mask as predicted by the OPC model. For each of the immediately preceding correlations that are obtained, and at a selected measured value of the second CD on the wafer, a difference Δ is obtained between the difference of the mask CDs calculated by interpolation of wafer CD measurements and by OPC model predictions. Each value of Δ is transformed into an OPC model error that each correspond to a particular value of the specified CD.
    • 提供了一种访问光学邻近校正(OPC)模型中的模型误差的方法。 该方法开始于使用OPC模型获得初步掩模,使用光刻从初步掩模创建蚀刻晶片,并测量晶片上的指定临界尺寸(CD)和晶片上的第二CD。 确定对应于晶片上的第二CD的测量值与晶片上的第二CD的期望值之间的差异的边缘放置误差(EPE)。 针对指定CD的多个不同值重复上述步骤,以获得指定CD的每个不同值的EPE。 对于指定CD的多个值中的每一个,晶片上的第二CD的测量值与掩模上的第二CD的相应值相关。 对于指定CD的多个值中的每一个,晶片上的第二CD的测量值与由OPC模型预测的掩模上的第二CD的对应值相关。 对于所获得的每个先前相关性,并且在晶片上的第二CD的选定测量值处,通过硅片CD测量的插值和通过OPC模型预测计算出的掩模CD的差异获得差值Delta。 Delta的每个值被转换成OPC模型错误,每个对应于指定CD的特定值。
    • 4. 发明申请
    • ELECTROPHOTOGRAPHIC PHOTORECEPTOR, METHOD FOR MANUFACTURING SAME, AND ELECTROPHOTOGRAPHIC APPARATUS USING SAME
    • 电子照相机,其制造方法和使用相同的电子照相设备
    • US20140199619A1
    • 2014-07-17
    • US14232900
    • 2011-08-05
    • Seizo KitagawaYasushi TanakaShinjiro SuzukiHiroshi EmoriKazuki Nebashi
    • Seizo KitagawaYasushi TanakaShinjiro SuzukiHiroshi EmoriKazuki Nebashi
    • G03G15/00B05D5/12
    • G03G5/047B05D1/18G03G5/04G03G5/0503G03G5/0525G03G5/0564G03G5/0696
    • A layered, positively-charged electrophotographic photoreceptor, a method for manufacturing the photoreceptor and an electrophotographic apparatus using the photoreceptor are disclosed. The layered, positively-charged electrophotographic photoreceptor includes a conductive support on which is provided a sequential stack composed of a charge transport layer containing at least a first hole transport material and a first binder resin; and a charge generation layer containing at least a charge generation material, a second hole transport material, an electron transport material, and a second binder resin, wherein the charge generation layer and the charge transport layer have a total amount of residual solvents that is 50 μg/cm2 or less. The photoreceptor is highly sensitive, highly durable, and has excellent image qualities including low image defects from cracks generated due to image memory or contact contamination. The photoreceptor is applicable to a high-resolution and high-speed positively-charged electrophotographic apparatuses and provides excellent operational stability.
    • 公开了层状的带正电荷的电子照相感光体,感光体的制造方法和使用感光体的电子照相设备。 层状的带正电荷的电子照相感光体包括导电支撑体,其上设置有由至少含有第一空穴传输材料和第一粘合剂树脂的电荷输送层构成的顺序叠层; 以及至少包含电荷产生材料,第二空穴传输材料,电子传输材料和第二粘合剂树脂的电荷产生层,其中电荷产生层和电荷输送层具有总量为50的残留溶剂 μg/ cm2以下。 感光体高度敏感,高度耐用,并且具有优异的图像质量,包括由于图像记忆或接触污染而产生的裂纹的低图像缺陷。 感光体适用于高分辨率和高速正电照相设备,并提供优异的操作稳定性。
    • 5. 发明申请
    • HIGH STRENGTH PRESS-FORMED MEMBER AND METHOD FOR MANUFACTURING THE SAME
    • 高强度压制成型体及其制造方法
    • US20130048161A1
    • 2013-02-28
    • US13583407
    • 2011-02-28
    • Hiroshi MatsudaYoshimasa FunakawaYasushi Tanaka
    • Hiroshi MatsudaYoshimasa FunakawaYasushi Tanaka
    • C21D8/02C22C38/04C22C38/38C22C38/08C22C38/12C22C38/16C22C38/02C22C38/06
    • C21D8/0247C21D1/22C21D8/0205C21D9/46C21D2211/001C21D2211/002C21D2211/008C22C38/001C22C38/02C22C38/04C22C38/06
    • A high strength press-formed member includes a steel sheet constituting the member including a composition including by mass %, C: 0.12% to 0.69%, Si: 3.0% or less, Mn: 0.5% to 3.0%, P: 0.1% or less, S: 0.07% or less, Al: 3.0% or less, N: 0.010% or less, Si+Al: at least 0.7%, and remainder as Fe and incidental impurities, wherein a microstructure of the steel sheet includes martensite, retained martensite, and bainite containing bainitic ferrite, an area ratio of said martensite with respect to the entire microstructure of the steel sheet is 10% to 85%, at least 25% of said martensite is tempered martensite, content of retained austenite is 5% to 40%, area ratio of said bainitic ferrite in said bainite with respect to the entire microstructure of the steel sheet is at least 5%, total of area ratios of said martensite, said retained austenite, and said bainitic ferrite in said bainite with respect to the entire microstructure of the steel sheet is at least 65%, and average carbon concentration in the retained austenite is at least 0.65 mass %.
    • 高强度压力成形构件包括构成该构件的钢板,该钢板包括质量%C:0.12%〜0.69%,Si:3.0%以下,Mn:0.5〜3.0%,P:0.1% S:0.07%以下,Al:3.0%以下,N:0.010%以下,Si + Al:0.7%以上,剩余部分作为Fe和附带杂质,其中,钢板的显微组织包括马氏体, 所含马氏体的贝氏体含有贝氏体铁素体,所述马氏体相对于钢板整体的面积比为10%〜85%,所述马氏体的回弹马氏体的至少25%为回火马氏体,残留奥氏体含量为5% 至所述贝氏体中所述贝氏体铁素体相对于钢板整体的面积比至少为40%,所述贝氏体中的所述马氏体,所述残留奥氏体和所述贝氏体铁素体的面积率为所述贝氏体的面积率的至少5% 钢板的整个微观结构至少为65%,平均碳浓度为 残留奥氏体中的残留率为0.65质量%以上。