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1. 发明授权

US4672406A Semiconductor member and semiconductor device employing the same 失效
标题翻译：采用该半导体元件的半导体元件和半导体器件
公开(公告)号：US4672406A
公开(公告)日：1987-06-09
申请号：US684691
申请日：1984-12-21
申请人： Yasushi Sawada , Kiichi Ueyanagi , Yoshifumi Katayama , Yasuhiro Shiraki , Makoto Morioka , Takao Kuroda , Tomoyoshi Mishima
发明人： Yasushi Sawada , Kiichi Ueyanagi , Yoshifumi Katayama , Yasuhiro Shiraki , Makoto Morioka , Takao Kuroda , Tomoyoshi Mishima
IPC分类号： H01L29/812 , H01L21/338 , H01L21/8252 , H01L27/095 , H01L29/201 , H01L29/205 , H01L29/36 , H01L29/43 , H01L29/47 , H01L29/778 , H01L29/80
CPC分类号： H01L21/8252 , H01L27/095 , H01L29/432 , H01L29/475 , H01L29/7783
摘要： A semiconductor member has a structure wherein a first semiconductor layer is held between second and third semiconductor layers which have forbidden band widths greater than a forbidden band width of the first semiconductor layer, and wherein only the second semiconductor layer which is formed on a side of the first semiconductor layer close to a substrate is doped with impurities. The semiconductor member constructs the depletion type with the first and second semiconductor layers, and the enhancement type with the first and third semiconductor layers. A semiconductor device can be properly formed in the enhancement or depletion type by selectively connecting the semiconductor layers.
摘要翻译：半导体部件具有这样的结构，其中第一半导体层被保持在禁止带宽大于第一半导体层的禁带宽度的第二和第三半导体层之间，并且其中只有形成在第一半导体层靠近基板的第一半导体层掺杂有杂质。半导体部件利用第一和第二半导体层构成耗尽型，并且利用第一和第三半导体层构成增强型。可以通过选择性地连接半导体层，以增强或耗尽型形式适当地形成半导体器件。

2. 发明授权

US4673959A Heterojunction FET with doubly-doped channel 失效
标题翻译：具有双掺杂沟道的异质结FET
公开(公告)号：US4673959A
公开(公告)日：1987-06-16
申请号：US686661
申请日：1984-12-27
申请人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
发明人： Yasuhiro Shiraki , Yoshifumi Katayama , Yoshimasa Murayama , Makoto Morioka , Yasushi Sawada , Tomoyoshi Mishima , Takao Kuroda , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L29/205 , H01L29/423 , H01L29/778 , H01L29/80
CPC分类号： H01L29/42316 , H01L29/7781 , H01L29/7786
摘要： There is disclosed a semiconductor device comprising at least first and second semiconductor layers positioned to form a hetero-junction therebetween, such a hetero-junction being adapted to form a channel, means for controlling carriers, and source and drain areas on opposite edges of the channel, wherein the first and second semiconductor layers formed between the source and drain regions have an area containing only 10.sup.16 cm.sup.-3 or less of an impurity; the first semiconductor layer has a wider forbidden band than that of the second semiconductor layer; and further including at least one semiconductor layer having a higher activation efficiency of impurities than that of the first semiconductor layer, with such at least one semiconductor layer being located on the side of the first semiconductor layer not in contact with the second semiconductor layer. A multi-quantum well structure may be used as the higher impurity activation efficiency semiconductor layer. The electrical resistance in the semiconductor area constituting the source and drain regions can be lowered by utilizing such a higher impurity activation efficiency semiconductor layer.
摘要翻译：公开了一种半导体器件，其至少包括第一和第二半导体层，该第一和第二半导体层被定位以在它们之间形成异质结，这样的异质结适于形成沟道，用于控制载流子的装置，以及在其的相对边缘上的源极和漏极区域沟道，其中形成在源区和漏区之间的第一和第二半导体层具有仅含有1016cm-3或更小的杂质的面积; 第一半导体层具有比第二半导体层更宽的禁带; 并且还包括至少一个具有比第一半导体层高的杂质活化效率的半导体层，这样的至少一个半导体层位于不与第二半导体层接触的第一半导体层的一侧。可以使用多量子阱结构作为较高的杂质活化效率半导体层。通过利用这种较高的杂质活化效率的半导体层，可以降低构成源区和漏区的半导体区的电阻。

3. 发明授权

US4605945A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4605945A
公开(公告)日：1986-08-12
申请号：US609446
申请日：1984-05-11
申请人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
发明人： Yoshifumi Katayama , Yasuhiro Shiraki , Ken Yamaguchi , Yoshimasa Murayama , Yasushi Sawada , Toshiyuki Usagawa , Eiichi Maruyama
IPC分类号： H01L29/812 , H01L21/338 , H01L27/06 , H01L29/10 , H01L29/778 , H01L29/80
CPC分类号： H01L27/0605 , H01L29/1075 , H01L29/7786 , H01L29/7787
摘要： In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.
摘要翻译：在具有布置成形成异质结的至少第一半导体层和第二半导体层的半导体器件中，第一半导体层的导带的边缘的能量位于能量低于导带的边缘的能量异质结附近的第二半导体层，与第一半导体层电连接的至少一对电极，以及控制在异质结附近诱发的载流子的装置; 一种半导体器件，其特征在于，在所述一对电极之间的所述第一半导体层的至少一部分中包含低杂质浓度区域，与所述一对电极中的每一对相邻的区域是高杂质浓度区域，并且至少在第一半导体层中包含含有与上述区域中所含的杂质相同或相反的导电型的杂质的一层。

4. 发明申请

US20060042545A1 Plasma treatment apparatus, method of producing reaction vessel for plasma generation, and plasma treatment method 失效
标题翻译：等离子体处理装置，等离子体生成用反应容器的制造方法以及等离子体处理方法
公开(公告)号：US20060042545A1
公开(公告)日：2006-03-02
申请号：US10529861
申请日：2004-05-26
申请人： Tetsuji Shibata , Keiichi Yamazaki , Noriyuki Taguchi , Yasushi Sawada
发明人： Tetsuji Shibata , Keiichi Yamazaki , Noriyuki Taguchi , Yasushi Sawada
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32541 , H01J2237/3325
摘要： A plasma treatment apparatus is provided, which enables to increase a treatment area and provide good treatment uniformity. This apparatus comprises a pair of electrode plates having a plurality of through holes and an insulating plate having a plurality of through holes. The insulating plate is disposed between the electrode plates such that positions of the through holes of the electrode plates correspond to the positions of the through holes of the insulating plate. A plurality of discharge spaces are formed by the through holes of the electrode plates and the through holes of the insulating plate. By applying a voltage between the electrode plates, while supplying a plasma generation gas into the discharge spaces, plasmas are generated simultaneously in the discharge spaces, and sprayed on an object to efficiently perform a large-area, uniform plasma treatment.
摘要翻译：提供了一种能够增加处理面积并提供良好的处理均匀性的等离子体处理装置。该装置包括具有多个通孔的一对电极板和具有多个通孔的绝缘板。绝缘板设置在电极板之间，使得电极板的通孔的位置对应于绝缘板的通孔的位置。多个放电空间由电极板的通孔和绝缘板的通孔形成。通过在电极板之间施加电压，在将等离子体产生气体供应到放电空间中的同时，在放电空间中同时产生等离子体，并喷射到物体上以有效地进行大面积均匀的等离子体处理。

5. 发明授权

US06731874B2 Optical transmission apparatus and optical systems 失效
标题翻译：光传输设备和光学系统
公开(公告)号：US06731874B2
公开(公告)日：2004-05-04
申请号：US10172811
申请日：2002-06-14
申请人： Hideaki Tsushima , Shigeki Kitajima , Yasushi Sawada
发明人： Hideaki Tsushima , Shigeki Kitajima , Yasushi Sawada
IPC分类号： H04B1008
CPC分类号： H04B10/0731 , H01S3/10015 , H01S3/1301 , H04Q11/0001 , H04Q11/0005 , H04Q11/0062 , H04Q2011/0039 , H04Q2011/0049 , H04Q2011/0069 , H04Q2011/0083
摘要： An optical transmission apparatus, an optical repeater using the optical transmission apparatus, and an optical cross-connect equipment for controlling switches depending on supervisory information, comprising: a doped fiber for amplifying an optical signal of wavelength Od; a wavelength multiplexer for outputting a pumping light to the doped fiber; a wavelength multiplexer for multiplexing an amplified optical signal and a supervisory optical signal to as to output it to an optical fiber at downstream side; a pumping and supervisory light source; an optical coupler for distributing the light from the light source at a ratio of N:1 to the wavelength multiplexers; and a driver for controlling the light source by adding the supervisory information and a direct current signal.
摘要翻译：光传输装置，使用该光传输装置的光中继器，以及根据监控信息控制开关的光交叉连接设备，包括：用于放大波长为λ的光信号的掺杂光纤; 波长多路复用器，用于向掺杂光纤输出泵浦光; 用于将放大的光信号和监视光信号复用以将其输出到下游侧的光纤的波长多路复用器; 泵浦和监控光源; 光耦合器，用于将来自光源的光以N:1的比率分配给波长多路复用器; 以及通过添加监视信息和直流信号来控制光源的驱动器。

6. 发明授权

US4985225A Process for producing aluminum nitride powders 失效
标题翻译：氮化铝粉末的制造方法
公开(公告)号：US4985225A
公开(公告)日：1991-01-15
申请号：US273761
申请日：1988-08-22
申请人： Noboru Hashimoto , Yasushi Sawada , Hiroyoshi Yoden , Shigehito Deki , Hisamitsu Takahashi
发明人： Noboru Hashimoto , Yasushi Sawada , Hiroyoshi Yoden , Shigehito Deki , Hisamitsu Takahashi
IPC分类号： C01B21/072
CPC分类号： C01B21/0726 , C01P2004/62 , C01P2006/10 , C01P2006/32
摘要： A process for producing aluminum nitride powders is disclosed, which comprises mixing a water-soluble aluminum-containing compound or an aluminum alkoxide and a water-soluble carbon-containing compound and/or a water-soluble nitrogen-containing compound, with water; drying the mixture to obtain a solid; and calcining the solid in a nitrogen-containing non-oxidative atmosphere. According to the process of the invention, high-purity uniform aluminum nitride fine powders can be obtained rapidly and inexpensively.
摘要翻译：公开了一种制备氮化铝粉末的方法，其包括将水溶性含铝化合物或烷氧基铝与水溶性含碳化合物和/或水溶性含氮化合物与水混合; 干燥混合物得到固体; 并将固体在含氮非氧化性气氛中煅烧。根据本发明的方法，可以快速且廉价地获得高纯度均匀的氮化铝细粉。

7. 发明授权

US06519441B1 Roll paper unit having paper path switching member and image forming apparatus employing the same 失效
标题翻译：具有纸张路径切换部件的卷纸单元和使用其的图像形成装置
公开(公告)号：US06519441B1
公开(公告)日：2003-02-11
申请号：US09341455
申请日：1999-09-09
申请人： Yasushi Sawada
发明人： Yasushi Sawada
IPC分类号： G03G1500
CPC分类号： G03G15/6517 , B41J11/48 , B41J11/70 , B41J13/009 , B41J15/04 , B41J15/042 , B65H16/00 , B65H23/04 , B65H2301/121 , B65H2301/34 , B65H2404/63 , B65H2701/1862 , G03G15/6523 , G03G2215/00447 , G03G2215/00455
摘要： When a roll paper unit 200 is incorporated into an image formation apparatus, a second outlet guide member 92 is turned around a pivot 92a in the direction of an arrow G, i.e., moved from a position of solid lines to a position of two-dot chain lines, a rear end portion 92b of this second outlet guide member 92 pressing down a front end portion 80c of a guide member 80 to cause the guide member 80 to be turned around a central shaft 80d in the direction of an arrow H, i.e., moved from a position of solid lines to a position of two-dot chain line. Consequently, a path extending in the direction of an arrow C is closed, while a path extending in the direction of an arrow F is opened, the roll paper 72 being transferred in the paper feed direction. When the roll paper unit 200 is drawn out, the second outlet guide member 92 and the guide member 80 are turned in the directions opposite to those mentioned above. Consequently, the path extending in the direction of the arrow F is closed, while the path extending in the direction of the arrow C is opened, the roll paper 72 being transferred in the paper discharge direction.
摘要翻译：当卷纸单元200被结合到图像形成装置中时，第二出口引导构件92围绕枢轴92a沿箭头G的方向转动，即从实线的位置移动到双点位置该第二出口引导构件92的后端部分92b压下引导构件80的前端部分80c，以引导构件80绕箭头H的方向绕中心轴80d转动，即从实线位置移动到双点划线的位置。因此，沿着箭头C的方向延伸的路径被封闭，同时沿着箭头F的方向延伸的路径被打开，卷纸72沿供纸方向转印。当卷纸单元200被拉出时，第二出口引导构件92和引导构件80沿与上述相反的方向转动。因此，沿着箭头F的方向延伸的路径是闭合的，而沿着箭头C方向延伸的路径被打开，卷纸72沿排纸方向转印。

8. 发明授权

US06429400B1 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06429400B1
公开(公告)日：2002-08-06
申请号：US09667437
申请日：2000-09-22
申请人： Yasushi Sawada , Keiichi Yamazaki , Yoshitami Inoue , Sachiko Okazaki , Masuhiro Kogoma
发明人： Yasushi Sawada , Keiichi Yamazaki , Yoshitami Inoue , Sachiko Okazaki , Masuhiro Kogoma
IPC分类号： B23K1000
CPC分类号： H01J37/32366 , H05H1/2406 , H05H2001/2443
摘要： A plasma processing apparatus for performing plasma processing of an article, comprising: a central electrode; a tubular outer electrode which is provided so as to surround the central electrode; a tubular reaction pipe which is disposed between the central electrode and the outer electrode so as to electrically insulate the central electrode and the outer electrode from each other; a gas supply device for supplying a plasma producing gas to a discharge space defined between the central electrode and the outer electrode in the reaction pipe; an AC power source for applying an AC voltage between the central electrode and the outer electrode; wherein not only the plasma producing gas is supplied to the discharge space by the gas supply device but the AC voltage is applied between the central electrode and the outer electrode by the AC power source so as to generate a glow discharge in the discharge space under atmospheric pressure such that a plasma jet is blown to the article from a blow-off outlet of the reaction pipe; and a cooling device for cooling the central electrode and the outer electrode.
摘要翻译：一种用于执行制品的等离子体处理的等离子体处理装置，包括：中心电极; 设置成围绕中心电极的管状外电极; 管状反应管，其设置在所述中心电极和所述外部电极之间，以使所述中心电极和所述外部电极彼此电绝缘; 气体供给装置，用于将等离子体产生气体供给到在反应管中的中心电极和外部电极之间限定的放电空间; 用于在中心电极和外部电极之间施加AC电压的AC电源; 其中不仅通过气体供应装置将等离子体产生气体供应到放电空间，而且通过AC电源将AC电压施加在中心电极和外部电极之间，以便在大气中的放电空间中产生辉光放电压力使得等离子体射流从反应管的吹出口吹送到制品; 以及用于冷却中心电极和外部电极的冷却装置。

9. 发明授权

US06424445B1 Optical transmission apparatus and optical systems 失效
标题翻译：光传输设备和光学系统
公开(公告)号：US06424445B1
公开(公告)日：2002-07-23
申请号：US09025331
申请日：1998-02-18
申请人： Hideaki Tsushima , Shigeki Kitajima , Yasushi Sawada
发明人： Hideaki Tsushima , Shigeki Kitajima , Yasushi Sawada
IPC分类号： H04J1402
CPC分类号： H04B10/0731 , H01S3/10015 , H01S3/1301 , H04Q11/0001 , H04Q11/0005 , H04Q11/0062 , H04Q2011/0039 , H04Q2011/0049 , H04Q2011/0069 , H04Q2011/0083
摘要： An optical transmission apparatus, an optical repeater using the optical transmission apparatus, and an optical cross-connect equipment for controlling switches depending on supervisory information, comprising: a doped fiber for amplifying an optical signal of wavelength &lgr;d; a wavelength multiplexer for outputting a pumping light to the doped fiber; a wavelength multiplexer for multiplexing an amplified optical signal and a supervisory optical signal to as to output it to an optical fiber at downstream side; a pumping and supervisory light source; an optical coupler for distributing the light from the light source at a ratio of N:1 to the wavelength multiplexers; and a driver for controlling the light source by adding the supervisory information and a direct current signal.
摘要翻译：一种光传输装置，使用该光传输装置的光中继器，以及根据监控信息控制开关的光交叉连接设备，包括：用于放大波长lambdd的光信号的掺杂光纤; 波长多路复用器，用于向掺杂光纤输出泵浦光; 波长多路复用器，用于将放大的光信号和监控光信号复用成将其输出到下游侧的光纤; 泵浦和监控光源; 光耦合器，用于将来自光源的光以N:1的比率分配给波长多路复用器; 以及通过添加监视信息和直流信号来控制光源的驱动器。

10. 发明授权

US5585147A Process for a surface treatment of a glass fabric 失效
标题翻译：玻璃织物的表面处理方法
公开(公告)号：US5585147A
公开(公告)日：1996-12-17
申请号：US446476
申请日：1995-05-22
申请人： Satoru Ogawa , Yasushi Sawada , Masahiro Matsumura , Yoshihiko Nakamura
发明人： Satoru Ogawa , Yasushi Sawada , Masahiro Matsumura , Yoshihiko Nakamura
IPC分类号： C03C25/62 , H05K1/03 , H05H1/00
CPC分类号： C03C25/1095 , H05K1/0366
摘要： A surface treatment of a glass fabric used for a fiber reinforced composite such as multilayer circuit boards comprises the steps of exposing the glass fabric to an atmospheric pressure plasma of a mixture gas to obtain a plasma-treated surface of the glass fabric, and coating an organosilane compound on the plasma-treated surface. The mixture gas contains as a reaction gas at least one of an oxidative gas and a fluorine-containing gas, and a rare gas as a carrier of the reaction gas. The mixture gas is pre-heated prior to the plasma excitation thereof. When the glass fabric includes an organic compound as a sizing agent, the organic compound can be efficiently removed from the glass fabric by the exposing step. For example, the organosilane compound can be coated on the plasma-treated surface by exposing the plasma-treated surface to a second atmospheric pressure plasma of a second mixture gas containing an organosilane monomer. The surface treatment of the present invention is useful to efficiently produce a multilayer circuit board having excellent adhesion between the glass fabric and a resin, and resistance to CAF (Conductive Anodic Filaments).
摘要翻译：用于诸如多层电路板的纤维增强复合材料的玻璃织物的表面处理包括将玻璃织物暴露于混合气体的大气压等离子体以获得玻璃织物的等离子体处理表面的步骤，在等离子体处理的表面上的有机硅烷化合物。混合气体作为反应气体含有氧化性气体和含氟气体中的至少一种，作为反应气体的载体的稀有气体。混合气在其等离子体激发之前被预热。当玻璃织物包含作为施胶剂的有机化合物时，可以通过曝光步骤从玻璃织物中有效地除去有机化合物。例如，通过将等离子体处理的表面暴露于含有有机硅烷单体的第二混合气体的第二大气压等离子体中，可以将有机硅烷化合物涂覆在等离子体处理的表面上。本发明的表面处理可有效地制造玻璃织物和树脂之间具有优异粘合性和耐CAF（导电阳极丝）的多层电路板。

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