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1. 发明授权

US08903594B2 Driving diagnosis apparatus and program for same 有权
标题翻译：驾驶诊断仪器及程序相同
公开(公告)号：US08903594B2
公开(公告)日：2014-12-02
申请号：US13176048
申请日：2011-07-05
申请人： Yasushi Sakuma , Yasuyuki Itoh , Kazunao Yamada , Yusuke Mizuno
发明人： Yasushi Sakuma , Yasuyuki Itoh , Kazunao Yamada , Yusuke Mizuno
IPC分类号： G01M17/00 , G07C5/08
CPC分类号： G07C5/0808 , G07C5/085
摘要： When an accelerator is put in an OFF state to decelerate a vehicle and perform inertia travel with supply of fuel being cut off, measurement of an accelerator OFF lapse time is started. When a travel speed falls down to be lower than a pre-stop speed, a measured lapse time is stored in a memory, with the measurement of the lapse time being further continued. After finishing a travel of a downward slope, the travel speed is reduced to fall down to the pre-stop speed again, a lapse time continuously measured up to that time is updated in the memory. When the travel speed falls to a stop speed, the measurement of the lapse time is finished and the continuously-measured lapse time is determined as a required stop time of the vehicle. As the required stop time increases, driving is diagnosed as being fuel-efficient.
摘要翻译：当加速器处于关闭状态以使车辆减速并且随着燃料供应被切断而进行惯性行驶时，开始加速器关闭经过时间的测量。当行驶速度下降到低于预停速度时，将测量的经过时间存储在存储器中，并且进一步继续经过时间的测量。在完成向下坡度的行进之后，行进速度降低到再次下降到预停速度，直到该时间连续测量的经过时间被更新在存储器中。当行驶速度下降到停止速度时，经过时间的测量结束，并且将连续测量的经过时间确定为车辆的所需停止时间。随着所需停车时间的增加，驾驶被诊断为节能。

2. 发明授权

US08755961B2 Hybrid vehicle battery charge management apparatus 有权
标题翻译：混合动力汽车蓄电池充电管理装置
公开(公告)号：US08755961B2
公开(公告)日：2014-06-17
申请号：US13245958
申请日：2011-09-27
申请人： Kazunao Yamada , Yusuke Mizuno , Yasushi Sakuma , Yasuyuki Itoh
发明人： Kazunao Yamada , Yusuke Mizuno , Yasushi Sakuma , Yasuyuki Itoh
IPC分类号： B60W20/00 , B60W30/18 , B60L11/18
CPC分类号： B60W30/18127 , B60K6/46 , B60L11/1861 , B60L11/1862 , B60W10/06 , B60W10/26 , B60W20/00 , B60W20/13 , B60W20/14 , B60W2510/244 , B60W2710/242 , Y02T10/6217 , Y02T10/6291 , Y02T10/7044 , Y02T10/7258 , Y02T10/7283 , Y02T10/92 , Y10S903/907
摘要： A drive condition, which is used to determine a SOC management plan, is collected from each of road sections and is cumulatively memorized in a durable memory medium. When a remaining charge amount of a battery reaches a lower limit standard value or an upper limit standard value at a certain location, a candidate control section is defined around and includes such point. The candidate control section is defined to extend a predetermined distance forward and backward from such point. The drive conditions stored for the candidate control section are used to determine the SOC management plan that controls the remaining charge amount of the battery to be controlled within a standard range. When the vehicle enters the candidate control section, the drive control of a power source in the vehicle is performed according to the SOC management plan for the candidate control section.
摘要翻译：用于确定SOC管理计划的驱动条件是从每个路段收集的，并累积记录在耐用存储介质中。当电池的剩余电量达到特定位置的下限标准值或上限标准值时，候选控制部分被围绕并且包括这些点。候选控制部被定义为从该点向前和向后延伸预定距离。用于候选控制部分存储的驱动条件用于确定控制在标准范围内控制的电池的剩余电量的SOC管理计划。当车辆进入候选控制部时，根据候选控制部的SOC管理计划进行车辆的电源的驱动控制。

3. 发明申请

US20120078458A1 VEHICLE DRIVE CONTROL APPARATUS 有权
标题翻译：车辆驾驶控制装置
公开(公告)号：US20120078458A1
公开(公告)日：2012-03-29
申请号：US13245958
申请日：2011-09-27
申请人： Kazunao YAMADA , Yusuke Mizuno , Yasushi Sakuma , Yasuyuki Itoh
发明人： Kazunao YAMADA , Yusuke Mizuno , Yasushi Sakuma , Yasuyuki Itoh
IPC分类号： B60W20/00
CPC分类号： B60W30/18127 , B60K6/46 , B60L11/1861 , B60L11/1862 , B60W10/06 , B60W10/26 , B60W20/00 , B60W20/13 , B60W20/14 , B60W2510/244 , B60W2710/242 , Y02T10/6217 , Y02T10/6291 , Y02T10/7044 , Y02T10/7258 , Y02T10/7283 , Y02T10/92 , Y10S903/907
摘要： A drive condition, which is used to determine a SOC management plan, is collected from each of road sections and is cumulatively memorized in a durable memory medium. When a remaining charge amount of a battery reaches a lower limit standard value or an upper limit standard value at a certain location, a candidate control section is defined around and includes such point. The candidate control section is defined to extend a predetermined distance forward and backward from such point. The drive conditions stored for the candidate control section are used to determine the SOC management plan that controls the remaining charge amount of the battery to be controlled within a standard range. When the vehicle enters the candidate control section, the drive control of a power source in the vehicle is performed according to the SOC management plan for the candidate control section.
摘要翻译：用于确定SOC管理计划的驱动条件是从每个路段收集的，并累积记录在耐用存储介质中。当电池的剩余电量达到特定位置的下限标准值或上限标准值时，候选控制部分被围绕并且包括这些点。候选控制部被定义为从该点向前和向后延伸预定距离。用于候选控制部分存储的驱动条件用于确定控制在标准范围内控制的电池的剩余电量的SOC管理计划。当车辆进入候选控制部时，根据候选控制部的SOC管理计划进行车辆的电源的驱动控制。

4. 发明申请

US20120010773A1 DRIVING DIAGNOSIS APPARATUS AND PROGRAM FOR SAME 有权
标题翻译：驾驶诊断设备及程序
公开(公告)号：US20120010773A1
公开(公告)日：2012-01-12
申请号：US13176048
申请日：2011-07-05
申请人： Yasushi SAKUMA , Yasuyuki Itoh , Kazunao Yamada , Yusuke Mizuno
发明人： Yasushi SAKUMA , Yasuyuki Itoh , Kazunao Yamada , Yusuke Mizuno
IPC分类号： G06F7/00
CPC分类号： G07C5/0808 , G07C5/085
摘要： When an accelerator is put in an OFF state to decelerate a vehicle and perform inertia travel with supply of fuel being cut off, measurement of an accelerator OFF lapse time is started. When a travel speed falls down to be lower than a pre-stop speed, a measured lapse time is stored in a memory, with the measurement of the lapse time being further continued. After finishing a travel of a downward slope, the travel speed is reduced to fall down to the pre-stop speed again, a lapse time continuously measured up to that time is updated in the memory. When the travel speed falls to a stop speed, the measurement of the lapse time is finished and the continuously-measured lapse time is determined as a required stop time of the vehicle. As the required stop time increases, driving is diagnosed as being fuel-efficient.
摘要翻译：当加速器处于关闭状态以使车辆减速并且随着燃料供应被切断而进行惯性行驶时，开始加速器关闭经过时间的测量。当行驶速度下降到低于预停速度时，将测量的经过时间存储在存储器中，并且进一步继续经过时间的测量。在完成向下坡度的行进之后，行进速度降低到再次下降到预停速度，直到该时间连续测量的经过时间被更新在存储器中。当行驶速度下降到停止速度时，经过时间的测量结束，并且将连续测量的经过时间确定为车辆的所需停止时间。随着所需停车时间的增加，驾驶被诊断为节能。

5. 发明授权

US07112889B1 Semiconductor device having an alignment mark formed by the same material with a metal post 有权
公开(公告)号：US07112889B1
公开(公告)日：2006-09-26
申请号：US09577932
申请日：2000-05-25
申请人： Shigeyuki Maruyama , Yasuyuki Itoh , Tetsurou Honda , Kazuhiro Tashiro , Makoto Haseyama , Kenichi Nagashige , Yoshiyuki Yoneda , Hirohisa Matsuki
发明人： Shigeyuki Maruyama , Yasuyuki Itoh , Tetsurou Honda , Kazuhiro Tashiro , Makoto Haseyama , Kenichi Nagashige , Yoshiyuki Yoneda , Hirohisa Matsuki
IPC分类号： H01L23/544
CPC分类号： H01L22/12 , G01R31/2891 , H01L21/67282 , H01L21/6838 , H01L22/32 , H01L23/544 , H01L24/97 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5448 , H01L2223/54493 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05647 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , Y10T29/49998 , Y10T279/11 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.

6. 发明授权

US08404496B2 Method of testing a semiconductor device and suctioning a semiconductor device in the wafer state 有权
标题翻译：测试半导体器件并在晶片状态下抽吸半导体器件的方法
公开(公告)号：US08404496B2
公开(公告)日：2013-03-26
申请号：US11439119
申请日：2006-05-24
申请人： Shigeyuki Maruyama , Yasuyuki Itoh , Tetsurou Honda , Kazuhiro Tashiro , Makoto Haseyama , Kenichi Nagashige , Yoshiyuki Yoneda , Hirohisa Matsuki
发明人： Shigeyuki Maruyama , Yasuyuki Itoh , Tetsurou Honda , Kazuhiro Tashiro , Makoto Haseyama , Kenichi Nagashige , Yoshiyuki Yoneda , Hirohisa Matsuki
IPC分类号： G01R31/26
CPC分类号： H01L22/12 , G01R31/2891 , H01L21/67282 , H01L21/6838 , H01L22/32 , H01L23/544 , H01L24/97 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5448 , H01L2223/54493 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05647 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , Y10T29/49998 , Y10T279/11 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.
摘要翻译：半导体器件具有可以被常规晶片探测器识别的对准标记。再分布层将半导体器件的电极连接到位于再分布层的预定位置的电极焊盘。在再分配层的电极焊盘上形成配置有外部连接电极的金属柱。在再分布层上形成由与金属柱相同的材料制成的标记构件。标记构件用作与金属柱形成预定位置关系的对准标记。

7. 发明授权

US06313539B1 Semiconductor memory device and production method of the same 失效
标题翻译：半导体存储器件及其制造方法相同
公开(公告)号：US06313539B1
公开(公告)日：2001-11-06
申请号：US09219310
申请日：1998-12-23
申请人： Seiichi Yokoyama , Shun Mitarai , Masaya Nagata , Jun Kudo , Nobuhito Ogata , Yasuyuki Itoh
发明人： Seiichi Yokoyama , Shun Mitarai , Masaya Nagata , Jun Kudo , Nobuhito Ogata , Yasuyuki Itoh
IPC分类号： H01L2348
CPC分类号： H01L27/11502 , H01L21/31683 , H01L21/76841 , H01L21/76864 , H01L21/7687 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2
摘要翻译：半导体存储器件包括：形成在衬底上并包括下电极，电介质膜和上电极的电容器; 形成在所述基板上的选择晶体管; 用于在所述选择晶体管和所述电容器之间提供电连接的导电插头; 以及设置在电容器的导电插头和下电极之间的扩散阻挡膜。扩散阻挡膜是TaxSi1-xNy膜或HfxSi1-xNy膜（其中0.2

8. 发明授权

US5965942A Semiconductor memory device with amorphous diffusion barrier between capacitor and plug 失效
标题翻译：半导体存储器件在电容器和插头之间具有非晶扩散阻挡层
公开(公告)号：US5965942A
公开(公告)日：1999-10-12
申请号：US851895
申请日：1997-05-06
申请人： Yasuyuki Itoh , Shigeo Onishi , Jun Kudo , Keizo Sakiyama
发明人： Yasuyuki Itoh , Shigeo Onishi , Jun Kudo , Keizo Sakiyama
IPC分类号： H01L21/02 , H01L21/768 , H01L27/108
CPC分类号： H01L21/7687 , H01L27/10808 , H01L28/60 , H01L28/55 , H01L28/75
摘要： In a semiconductor memory device, a tantalum silicon nitride film or hafnium silicon nitride film is provided, as a diffusion barrier layer, between a polysilicon plug which electrically connects a source/drain region to a lower platinum electrode of a capacitor, formed on a silicon substrate, and the lower platinum electrode.The tantalum silicon nitride film has a composition of Ta.sub.X Si.sub.1-X N.sub.Y wherein 0.75 .ltoreq.X.ltoreq.0.95 and 1.0 .ltoreq.Y.ltoreq.1.1.The hafnium silicon nitride film has a composition of Hf.sub.X Si.sub.1-X N.sub.Y wherein 0.2
摘要翻译：在半导体存储器件中，在形成于硅上的电容器的源极/漏极区域与电容器的下部铂电极电连接的多晶硅插塞之间，设置有作为扩散阻挡层的氮化硅氮化硅膜或氮化铪膜基板和下部铂电极。钽硅氮化物膜具有TaXSi1-XNY的组成，其中0.75≤X≤0.95和1.0≤Y≤1.1。氮化铪膜的组成为HfXSi1-XNY，其中0.2

9. 发明授权

US5776356A Method for etching ferroelectric film 失效
标题翻译：腐蚀铁电薄膜的方法
公开(公告)号：US5776356A
公开(公告)日：1998-07-07
申请号：US388828
申请日：1995-02-15
申请人： Seiichi Yokoyama , Yasuyuki Itoh , Shigeo Onishi , Jun Kudo , Keizo Sakiyama , Hitoshi Urashima
发明人： Seiichi Yokoyama , Yasuyuki Itoh , Shigeo Onishi , Jun Kudo , Keizo Sakiyama , Hitoshi Urashima
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3065
CPC分类号： H01L21/31122 , H01L28/55
摘要： A method for etching a ferroelectric film made of a compound containing lead of the present invention, includes the steps of: forming an insulating film, metal films, and a ferroelectric film on a substrate in this order; forming an etching resistant film on the ferroelectric film, followed by patterning; and etching the ferroelectric film with a mixed gas containing an inert gas and a halogen gas or a halogenated gas as an etching gas, using the patterned etching resistant film as an etching mask.
摘要翻译：本发明的由含铅化合物构成的铁电体膜的蚀刻方法包括以下步骤：在基板上依次形成绝缘膜，金属膜和铁电体膜; 在强电介质膜上形成耐蚀刻膜，然后进行图案化; 并使用图案化抗蚀剂膜作为蚀刻掩模，用包含惰性气体和卤素气体或卤化气体的混合气体作为蚀刻气体来蚀刻铁电体膜。

10. 发明申请

US20110178673A1 WEIGHT DETECTION DEVICE FOR VEHICLE AND METHOD FOR DETECTING WEIGHT OF VEHICLE COMPONENT 审中-公开
标题翻译：车辆重量检测装置及检测车辆重量的方法
公开(公告)号：US20110178673A1
公开(公告)日：2011-07-21
申请号：US12972872
申请日：2010-12-20
申请人： Tsutomu Nakamura , Kenji Takeda , Yasuyuki Itoh
发明人： Tsutomu Nakamura , Kenji Takeda , Yasuyuki Itoh
IPC分类号： G06F19/00
CPC分类号： G01G3/16 , G01G19/08
摘要： A vehicle includes a wheel and a vehicle body connected with each other via a suspension having a spring. An oscillation detection unit detects an oscillation of the vehicle body in forward and backward directions. A resonance frequency detection unit detects a resonance frequency of the vehicle body according to a detection result of the oscillation detection unit. A weight determination unit determines a weight of the vehicle body according to the resonance frequency detected by the resonance frequency detection unit.
摘要翻译：车辆包括通过具有弹簧的悬架彼此连接的车轮和车体。振动检测单元检测前后方向的车身振动。谐振频率检测单元根据振荡检测单元的检测结果检测车身的共振频率。重量确定单元根据由共振频率检测单元检测的共振频率来确定车体的重量。

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