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    • 6. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    • 半导体发光器件及其制造方法
    • US20110049541A1
    • 2011-03-03
    • US12719464
    • 2010-03-08
    • Hiroshi KatsunoYasuo OhbaKei KanekoMitsuhiro Kushibe
    • Hiroshi KatsunoYasuo OhbaKei KanekoMitsuhiro Kushibe
    • H01L33/02H01L33/12H01L33/00
    • H01L33/405H01L33/0079
    • A semiconductor light emitting device, includes: a stacked structural unit including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided therebetween; and an electrode including a first and second metal layers, the first metal layer including silver or silver alloy and being provided on a side of the second semiconductor layer opposite to the light emitting layer, the second metal layer including at least one element selected from gold, platinum, palladium, rhodium, iridium, ruthenium, and osmium and being provided on a side of the first metal layer opposite to the second semiconductor layer. A concentration of the element in a region including an interface between the first and second semiconductor layers is higher than that of the element in a region of the first metal layer distal to the interface.
    • 一种半导体发光器件,包括:堆叠结构单元,包括第一导电类型的第一半导体层,第二导电类型的第二半导体层和设置在其间的发光层; 以及包括第一和第二金属层的电极,所述第一金属层包括银或银合金,并且设置在与所述发光层相对的所述第二半导体层的一侧,所述第二金属层包括选自金的至少一种元素 ,铂,钯,铑,铱,钌和锇,并且设置在与第二半导体层相对的第一金属层的一侧。 包括第一和第二半导体层之间的界面的区域中的元素的浓度高于在第一金属层远离界面的区域中的元素的浓度。
    • 7. 发明申请
    • SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    • 半导体发光器件及其制造方法
    • US20100051987A1
    • 2010-03-04
    • US12400396
    • 2009-03-09
    • Hiroshi KatsunoYasuo OhbaKei KanekoMitsuhiro Kushibe
    • Hiroshi KatsunoYasuo OhbaKei KanekoMitsuhiro Kushibe
    • H01L33/00H01L21/28
    • H01L33/44H01L33/0025H01L33/06H01L33/24H01L33/38H01L2224/05001H01L2224/05022H01L2224/05124H01L2224/05139H01L2224/05155H01L2224/05166H01L2224/05169H01L2224/05171H01L2224/05181H01L2224/05184H01L2224/05568H01L2224/05644H01L2224/05664H01L2224/05669H01L2224/13H01L2224/48091H01L2224/73265H01L2924/00014H01L2924/013H01L2924/01013
    • A semiconductor light-emitting device includes: a laminated structure, a first electrode, a second electrode and a dielectric laminated film. The laminated structure includes, a first semiconductor layer, a second semiconductor layer, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, in which the second semiconductor layer and the light-emitting layer are selectively removed and a part of the first semiconductor layer is exposed to a first main surface on the side of the second semiconductor layer. The first electrode is provided on the first main surface of the laminated structure and connected to the first semiconductor layer and has a first region including a first metal film provided on the first semiconductor layer of the first main surface, and a second region including a second metal film provided on the first semiconductor layer and having a higher reflectance for light emitted from the light-emitting layer than the first metal film and having a higher contact resistance with respect to the first semiconductor layer than the first metal film. The second electrode is provided on the first main surface of the laminated structure and connected to the second semiconductor layer. The dielectric laminated film is provided on the first and second semiconductor layer being not covered with the first and second electrode and has a plurality of dielectric films having different refractive indices being laminated.
    • 半导体发光器件包括:层叠结构,第一电极,第二电极和电介质层压膜。 层叠结构包括第一半导体层,第二半导体层和设置在第一半导体层和第二半导体层之间的发光层,其中第二半导体层和发光层被选择性地去除,并且 第一半导体层的一部分暴露于第二半导体层侧的第一主表面。 第一电极设置在层压结构的第一主表面上并连接到第一半导体层,并且具有包括设置在第一主表面的第一半导体层上的第一金属膜的第一区域和包括第二半导体层 金属膜,其设置在第一半导体层上,并且对于从第一金属膜发射的发光层的光具有较高的反射率,并且相比于第一金属膜具有比第一半导体层更高的接触电阻。 第二电极设置在层叠结构的第一主表面上并连接到第二半导体层。 电介质层叠膜设置在不被第一和第二电极覆盖的第一和第二半导体层上,并且具有层叠具有不同折射率的多个电介质膜。
    • 9. 发明授权
    • Semiconductor light-emitting device
    • 半导体发光装置
    • US08729583B2
    • 2014-05-20
    • US12873670
    • 2010-09-01
    • Hiroshi KatsunoYasuo OhbaMitsuhiro KushibeKei KanekoShinji Yamada
    • Hiroshi KatsunoYasuo OhbaMitsuhiro KushibeKei KanekoShinji Yamada
    • H01L33/22
    • H01L33/382H01L33/22H01L33/405H01L2224/48091H01L2224/73265H01L2924/19107H01L2924/00014
    • According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer.
    • 根据一个实施例,半导体发光器件包括第一半导体层,第二半导体层,发光层,第三半导体层和第一电极。 第一导电类型的第一半导体层具有设置有第一表面粗糙度的第一主表面。 第二导电类型的第二半导体层设置在第一半导体层与第一主表面相对的一侧上。 发光层设置在第一和第二半导体层之间。 第一半导体层设置在第三半导体层和发光层之间。 第三半导体层的杂质浓度低于第一半导体层的杂质浓度,并且包括露出第一表面粗糙度的开口。 第一电极通过开口与第一表面凹凸接触,并且反射到从发光层发射的发射光。
    • 10. 发明授权
    • Semiconductor light emitting device and wafer
    • 半导体发光器件和晶圆
    • US08692228B2
    • 2014-04-08
    • US13671578
    • 2012-11-08
    • Kei KanekoYasuo OhbaHiroshi KatsunoMitsuhiro Kushibe
    • Kei KanekoYasuo OhbaHiroshi KatsunoMitsuhiro Kushibe
    • H01L29/06
    • H01L33/0025H01L33/06H01L33/325
    • A semiconductor light emitting device includes a first layer including at least one of n-type GaN and n-type AlGaN; a second layer including Mg-containing p-type AlGaN; and a light emitting section provided between the first and second layers. The light emitting section includes barrier layers of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a well layer provided between the barrier layers and made of GaInN or AlGaInN. The barrier layers have a nearest barrier layer nearest to the second layer among the barrier layers and a far barrier layer. The nearest barrier layer includes a first portion made of Si-containing AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1), and a second portion provided between the first portion and the second layer and made of AlxGa1-x-yInyN (0≦x, 0≦y, x+y≦1). The Si concentration in the second portion is lower than those in the first portion and in the far barrier layer.
    • 半导体发光器件包括包括n型GaN和n型AlGaN中的至少一种的第一层; 包含含Mg的p型AlGaN的第二层; 以及设置在第一层和第二层之间的发光部。 发光部分包括含Si的Al x Ga 1-x-y In y N(0&nl E; x,0&nl E; y,x + y≦̸ 1)的势垒层,以及设置在阻挡层之间并由GaInN或AlGaInN制成的阱层。 阻挡层在阻挡层和远的阻挡层之间具有最接近第二层的阻挡层。 最接近的阻挡层包括由含Si的Al x Ga 1-x-y In y N(0&nl; x,0&nl; y,x + y≦̸ 1)制成的第一部分,以及设置在第一部分和第二层之间的第二部分, Al x Ga 1-x-y In y N(0&nl E; x,0&nl E; y,x + y≦̸ 1)。 第二部分中的Si浓度低于第一部分和远侧阻挡层中的Si浓度。