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1. 发明授权

US5089448A Silicon nitride sintered body having excellent high-temperature strength and method of producing same 失效
标题翻译：具有优异的高温强度的硅氮化物烧结体及其生产方法
公开(公告)号：US5089448A
公开(公告)日：1992-02-18
申请号：US632423
申请日：1990-12-24
申请人： Yasunobu Kawakami , Kagehisa Hamazaki , Toshihiko Arakawa , Toshiyuki Mori
发明人： Yasunobu Kawakami , Kagehisa Hamazaki , Toshihiko Arakawa , Toshiyuki Mori
IPC分类号： C04B35/584 , C04B35/593 , C04B35/626
CPC分类号： C04B35/584 , C04B35/5935
摘要： A silicon nitride sintered body having a composition of 1.5-3.0 weight % of Y.sub.2 O.sub.3, 0.1-1.0 weight % of Al.sub.2 O.sub.3 and balance substantially Si.sub.3 N.sub.4, a weight ratio of Y.sub.2 O.sub.3 /Al.sub.2 O.sub.3 being 2.5 or more, which has a density of 3.0 g/cm.sup.3 or more and has a structure in which the minor axes of grains are substantially 6 .mu.m or less. This silicon nitride sintered body is produced by preparing a powder mixture containing Y.sub.2 O.sub.3 powder, Al.sub.2 O.sub.3 powder and silicon nitride powder in the above proportions, the silicon nitride powder having an oxygen content of 1.2 weight % or less, a specific surface area of 9-11 m.sup.2 /g and a metal impurity content of 200 ppm or less; and sintering the powder mixture at a temperature of 1900.degree.-2100.degree. C. and a pressure of 5 kg/cm.sup.2 G or more in a nitrogen atmosphere.

2. 发明授权

US5733498A Method for producing silicon nitride reaction-sintered body 失效
标题翻译：氮化硅反应烧结体的制造方法
公开(公告)号：US5733498A
公开(公告)日：1998-03-31
申请号：US650553
申请日：1996-05-20
申请人： Yasunobu Kawakami , Kazumi Miyake , Hitoshi Toyoda , Naoki Ota , Kagehisa Hamazaki
发明人： Yasunobu Kawakami , Kazumi Miyake , Hitoshi Toyoda , Naoki Ota , Kagehisa Hamazaki
IPC分类号： B28B3/00 , C04B35/591 , C04B35/593 , C04B33/32 , B28B1/24
CPC分类号： B28B3/003 , C04B35/591 , C04B35/5935
摘要： A silicon nitride reaction-sintered body having a high mechanical strength without surface working can be produced by (1) forming a silicon powder mixture of at least two types of silicon powders having substantially independent particle size distribution ranges into a green body, the silicon powder mixture having an average particle size ranging from 5 .mu.m to 300 .mu.m; (2) heating the green body in a nitrogen-containing atmosphere for nitrogenation; and (3) sintering the nitrogenated green body at a temperature of 1900.degree. C. or higher.
摘要翻译：可以通过（1）将至少两种具有基本上独立的粒度分布范围的硅粉末的硅粉混合物形成为生坯体来生产具有无机械强度的无表面加工的氮化硅反应烧结体，硅粉末平均粒度为5〜300μm的混合物; （2）在含氮气氛中加热生坯以进行氮化; 和（3）在1900℃以上的温度下烧结氮化生坯。

3. 发明授权

US5158914A Method of heat-treating silicon nitride sintered body 失效
标题翻译：加热氮化硅烧结体的方法
公开(公告)号：US5158914A
公开(公告)日：1992-10-27
申请号：US758105
申请日：1991-09-12
申请人： Kagehisa Hamazaki , Kazumi Miyake , Yasunobu Kawakami
发明人： Kagehisa Hamazaki , Kazumi Miyake , Yasunobu Kawakami
IPC分类号： C04B35/584 , C04B35/64 , C04B41/00 , C04B41/50 , C04B41/80 , C04B41/86
CPC分类号： C04B41/009 , C04B41/0072 , C04B41/5023 , C04B41/80 , C04B41/86
摘要： In the method of heat-treating a silicon nitride sintered body which was produced from silicon nitride powder and sintering aid powder in order to provide it with an increased crystallinity, the silicon nitride sintered body is heat-treated in a non-oxidizing atmosphere under conditions such that the silicon nitride sintered body is embedded in at least one selected from the group consisting of powders of W, Mo, Ta, Re and carbides thereof.

4. 发明授权

US06187706B1 Silicon nitride sintered body and method of producing the same 失效
标题翻译：氮化硅烧结体及其制造方法
公开(公告)号：US06187706B1
公开(公告)日：2001-02-13
申请号：US08807539
申请日：1997-02-28
申请人： Masanori Okabe , Kagehisa Hamazaki
发明人： Masanori Okabe , Kagehisa Hamazaki
IPC分类号： C04B35587
CPC分类号： C04B35/5935
摘要： There is disclosed a silicon nitride sintered body produced by sintering a molded article which comprises a mixture of a silicon nitride powder as the main component and plural kinds of sintering additives, wherein said silicon nitride powder is set to be 0.1 to 1.0 &mgr;m in average grain size, and said plural kinds of sintering additives includes first and second sintering additives, said first sintering additive comprising oxide powders of at least one element of Group 3a element, said second sintering additive comprising oxide powders of at least one element selected from Zr (zirconium), Hf (hafnium), Nb (niobium), Ta (tantalum) and W (tungsten), said first sintering additive having the average grain size set to be 0.1 to 10 times as large as the average grain size of said silicon nitride powder and being incorporated in an amount ranging from 0.1 to 10% by weight to the mixture, said second sintering additive being such particles as that part of the particles are of grain size in the range from 10 to 100 times as large as the average grain size of said silicon nitride powder but the number of such part of the particles is in the 5 to 50% range of the total particle number and being incorporated in an amount ranging from 0 to 10% by weight to the mixture (provided that 0% by weight is not included). The sintering process of the molded article comprises a primary sintering in an atmosphere containing a nitrogen gas under the atmospheric pressure from 1 to 20 kgf/cm2 at 1600-1800° C., and subsequently secondary sintering in an atmosphere containing a nitrogen gas under the atmospheric pressure ranging from 100 to 2000 kgf/cm2 at a temperature lower than that of primary sintering.
摘要翻译：公开了一种通过烧结包含以氮化硅粉末为主要成分的混合物和多种烧结添加剂的模制品制造的氮化硅烧结体，其中所述氮化硅粉末的平均粒径设定为0.1〜1.0μm 并且所述多种烧结添加剂包括第一和第二烧结添加剂，所述第一烧结添加剂包含至少一种第3a族元素元素的氧化物粉末，所述第二烧结添加剂包含选自Zr（锆）中的至少一种元素的氧化物粉末），Hf（铪），Nb（铌），Ta（钽）和W（钨），所述第一烧结添加剂的平均粒径设定为所述氮化硅粉末的平均粒径的0.1〜10倍并且以相对于混合物为0.1至10重量％的量引入，所述第二烧结添加剂是颗粒的一部分在颗粒尺寸为的范围为所述氮化硅粉末的平均晶粒尺寸的10至100倍，但这些部分颗粒的数量在总颗粒数的5至50％范围内，并且以0至 10重量％的混合物（不包括0重量％）。模制品的烧结过程包括在大气压下在1600-1800℃的大气压下，在含有氮气的气氛中进行一次烧结，随后在含有氮气的气氛中二次烧结大气压在100〜2000kgf / cm2的范围内，温度低于初级烧结温度。

5. 发明授权

US07682528B2 Oxide ion conductor 失效
标题翻译：氧化物离子导体
公开(公告)号：US07682528B2
公开(公告)日：2010-03-23
申请号：US11522869
申请日：2006-09-18
申请人： Yoshikatsu Higuchi , Masayuki Sugawara , Kagehisa Hamazaki , Keizo Uematsu , Susumu Nakayama
发明人： Yoshikatsu Higuchi , Masayuki Sugawara , Kagehisa Hamazaki , Keizo Uematsu , Susumu Nakayama
IPC分类号： H01B1/08 , H01M4/48 , H01M8/00 , C04B35/50 , C04B35/00
CPC分类号： C01G17/00 , C01B13/14 , C01B33/20 , C01P2002/30 , C01P2002/72 , C01P2002/77 , C01P2006/40 , C04B35/01 , C04B35/16 , C04B35/6262 , C04B2235/3224 , C04B2235/3227 , C04B2235/3287 , C04B2235/605 , C04B2235/767 , C04B2235/787 , C04B2235/79 , H01B1/08 , H01B1/122 , H01M8/1246 , Y02E60/525 , Y02P70/56
摘要： An La2O3 powder and an SiO2 powder are mixed with each other, and then heated. By heating, a porous material of LaXSi6O1.5X+12 (8≦X≦10) as a composite oxide is produced. Subsequently, the porous material is pulverized to obtain a powder, and the powder is added to a solvent to prepare a slurry. The slurry is solidified in a magnetic field to prepare a compact. After that, the compact is sintered, and an oxide ion conductor is obtained thereby.
摘要翻译：将La 2 O 3粉末和SiO 2粉末彼此混合，然后加热。通过加热，产生作为复合氧化物的LaXSi6O1.5X + 12（8＆amp; NlE; X＆lt; 10; 10）的多孔材料。随后，将多孔材料粉碎以获得粉末，并将粉末加入到溶剂中以制备浆料。将浆料在磁场中固化以制备成型体。之后，将烧结体烧成，得到氧化物离子导体。

6. 发明授权

US07128995B2 Method of producing oxide ion conductor 失效
标题翻译：生产氧化物离子导体的方法
公开(公告)号：US07128995B2
公开(公告)日：2006-10-31
申请号：US10779052
申请日：2004-02-12
申请人： Yoshikatsu Higuchi , Masayuki Sugawara , Kagehisa Hamazaki , Keizo Uematsu , Susumu Nakayama
发明人： Yoshikatsu Higuchi , Masayuki Sugawara , Kagehisa Hamazaki , Keizo Uematsu , Susumu Nakayama
IPC分类号： H01B1/08 , H01M4/48 , C04B35/50
CPC分类号： C01G17/00 , C01B13/14 , C01B33/20 , C01P2002/30 , C01P2002/72 , C01P2002/77 , C01P2006/40 , C04B35/01 , C04B35/16 , C04B35/6262 , C04B2235/3224 , C04B2235/3227 , C04B2235/3287 , C04B2235/605 , C04B2235/767 , C04B2235/787 , C04B2235/79 , H01B1/08 , H01B1/122 , H01M8/1246 , Y02E60/525 , Y02P70/56
摘要： An La2O3 powder and an SiO2 powder are mixed with each other, and then heated. By heating, a porous material of LaXSi6O1.5X+12 (8≦X≦10) as a composite oxide is produced. Subsequently, the porous material is pulverized to obtain a powder, and the powder is added to a solvent to prepare a slurry. The slurry is solidified in a magnetic field to prepare a compact. After that, the compact is sintered, and an oxide ion conductor is obtained thereby.
摘要翻译：将二氧化钛粉末和二氧化硅粉末彼此混合，然后加热。通过加热作为复合氧化物的La xSiO 6 O 1.5 X + 12（8 = = X 10）的多孔材料生产。随后，将多孔材料粉碎以获得粉末，并将粉末加入到溶剂中以制备浆料。将浆料在磁场中固化以制备成型体。之后，将烧结体烧成，得到氧化物离子导体。

7. 发明授权

US5648028A Method of manufacturing a sintered composite body of silicon nitride and silicon carbide 失效
标题翻译：制造氮化硅和碳化硅烧结复合体的方法
公开(公告)号：US5648028A
公开(公告)日：1997-07-15
申请号：US413445
申请日：1995-03-30
申请人： Kazumi Miyake , Kagehisa Hamazaki , Hitoshi Toyoda , Yoshikatsu Higuchi
发明人： Kazumi Miyake , Kagehisa Hamazaki , Hitoshi Toyoda , Yoshikatsu Higuchi
IPC分类号： C01B21/068 , C04B35/573 , C04B35/575 , C04B35/591 , C04B35/593 , B28B3/00 , C04B33/32
CPC分类号： C01B21/0682 , C01B21/068 , C04B35/573 , C04B35/575 , C04B35/591 , C04B35/593 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12
摘要： A sintered composite body of silicon nitride and silicon carbide is manufactured by mixing a silicon powder with a carbonaceous powder and a sintering additive, producing a mixture, molding the mixture into a molded body, heat-treating the molded body in an atmosphere containing a nitrogen gas for thereby simultaneously nitriding and carbonizing silicon contained in the molded body, and subsequently firing the molded body in a nitrogen gas atmosphere. A composite powder of silicon nitride and silicon carbide which is produced by simultaneously nitriding and carbonizing silicon contained in the molded body has a content of .alpha.-type silicon nitride which is at least 30% of all silicon nitride in the composite powder. To produce such a composite powder, a silicon powder is mixed with a carbonaceous powder and a sintering additive, producing a mixture, and the mixture is heat-treated in an atmosphere containing a nitrogen gas at a temperature of at most 1450.degree. C. for thereby simultaneously nitriding and carbonizing silicon contained in the mixture, the arrangement being such that the temperature of the mixture is increased at a rate lower than 2.degree. C./minute from a temperature before the silicon starts being nitrided and carbonized up to the temperature of at most 1450.degree. C.
摘要翻译：通过将硅粉与碳质粉末和烧结添加剂混合制造氮化硅和碳化硅的烧结复合体，制造混合物，将混合物成型为成型体，在含有氮气的气氛中对成型体进行热处理气体，从而同时对包含在成型体中的硅进行氮化和碳化，随后在氮气气氛中焙烧成型体。通过同时对包含在成型体中的硅进行氮化和碳化而制造的氮化硅和碳化硅的复合粉末具有在复合粉末中为所有氮化硅的至少30％的α型氮化硅的含量。为了制造这种复合粉末，将硅粉末与碳质粉末和烧结添加剂混合，制成混合物，将混合物在含有氮气的气氛中在至多1450℃的温度下进行热处理，从而同时氮化和碳化混合物中所含的硅，该配置使得混合物的温度以低于2℃/分钟的速率从硅开始氮化和碳化之前的温度升高到至多1450℃

8. 发明申请

US20070015027A1 Oxide ion conductor 失效
标题翻译：氧化物离子导体
公开(公告)号：US20070015027A1
公开(公告)日：2007-01-18
申请号：US11522869
申请日：2006-09-18
申请人： Yoshikatsu Higuchi , Masayuki Sugawara , Kagehisa Hamazaki , Keizo Uematsu , Susumu Nakayama
发明人： Yoshikatsu Higuchi , Masayuki Sugawara , Kagehisa Hamazaki , Keizo Uematsu , Susumu Nakayama
IPC分类号： H01M8/10
CPC分类号： C01G17/00 , C01B13/14 , C01B33/20 , C01P2002/30 , C01P2002/72 , C01P2002/77 , C01P2006/40 , C04B35/01 , C04B35/16 , C04B35/6262 , C04B2235/3224 , C04B2235/3227 , C04B2235/3287 , C04B2235/605 , C04B2235/767 , C04B2235/787 , C04B2235/79 , H01B1/08 , H01B1/122 , H01M8/1246 , Y02E60/525 , Y02P70/56
摘要： An La2O3 powder and an SiO2 powder are mixed with each other, and then heated. By heating, a porous material of LaXSi6O1.5X+12 (8≦X≦10) as a composite oxide is produced. Subsequently, the porous material is pulverized to obtain a powder, and the powder is added to a solvent to prepare a slurry. The slurry is solidified in a magnetic field to prepare a compact. After that, the compact is sintered, and an oxide ion conductor is obtained thereby.
摘要翻译：将二氧化钛粉末和二氧化硅粉末彼此混合，然后加热。通过加热作为复合氧化物的La xSiO 6 O 1.5 X + 12（8 = = X 10）的多孔材料生产。随后，将多孔材料粉碎以获得粉末，并将粉末加入到溶剂中以制备浆料。将浆料在磁场中固化以制备成型体。之后，将烧结体烧成，得到氧化物离子导体。

9. 发明授权

US5928601A Method for producing silicon nitride reaction sintered body 失效
标题翻译：氮化硅反应烧结体的制造方法
公开(公告)号：US5928601A
公开(公告)日：1999-07-27
申请号：US953317
申请日：1997-10-17
申请人： Kazumi Miyake , Hitoshi Toyoda , Kagehisa Hamazaki
发明人： Kazumi Miyake , Hitoshi Toyoda , Kagehisa Hamazaki
IPC分类号： C04B35/591 , C04B33/32
CPC分类号： C04B35/591
摘要： A silicon nitride reaction-sintered body having a high mechanical strength without surface working can be produced by (1) forming a silicon powder mixture of at least two types of silicon powders having substantially independent particle size distribution ranges into a green body, the silicon powder mixture having an average particle size ranging from 5 .mu.m to 300 .mu.m; (2) heating the green body in a nitrogen-containing atmosphere for nitrogenation; and (3) sintering the nitrogenated green body at a temperature of 1900.degree. C. or higher.
摘要翻译：可以通过（1）将至少两种具有基本上独立的粒度分布范围的硅粉末的硅粉混合物形成为生坯体来生产具有无机械强度的无表面加工的氮化硅反应烧结体，硅粉末平均粒度为5〜300μm的混合物; （2）在含氮气氛中加热生坯以进行氮化; 和（3）在1900℃以上的温度下烧结氮化生坯。

10. 发明授权

US5912200A Composite powder and method of manufacturing sintered body therefrom 失效
标题翻译：复合粉末及其制造方法
公开(公告)号：US5912200A
公开(公告)日：1999-06-15
申请号：US857463
申请日：1997-05-16
申请人： Kazumi Miyake , Kagehisa Hamazaki , Hitoshi Toyoda , Yoshikatsu Higuchi
发明人： Kazumi Miyake , Kagehisa Hamazaki , Hitoshi Toyoda , Yoshikatsu Higuchi
IPC分类号： C01B21/068 , C04B35/575 , C04B35/591 , C04B35/593 , C04B35/565 , B28B3/00 , C04B35/584
CPC分类号： C01B21/068 , C04B35/575 , C04B35/591 , C04B35/593 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12 , Y10S977/776 , Y10S977/777
摘要： A composite powder having a specific surface area of 7 m.sup.2 /g or more is produced by mixing a silicon powder with a carbonaceous powder and a sintering aid powder, and heat-treating the resultant mixed powder in a nitrogen-containing atmosphere at a temperature of 1,450.degree. C. or lower thereby nitriding and carbonizing silicon in the mixed powder. The temperature elevation speed in the heat treatment for nitriding and carbonizing is less than 2.degree. C./minute at least in a range from a temperature at which the nitriding and carbonizing of silicon starts to take place to a temperature at which the composite powder is kept for nitriding and carbonizing of silicon. The composite sintered body is produced by sintering such a composite powder at a temperature of 1,600.degree. C. to 2,200.degree. C.
摘要翻译：比较表面积为7m 2 / g以上的复合粉末是通过将硅粉与碳质粉末和烧结助剂粉末混合，在氮气气氛中，在温度为 1,450℃以下，从而使混合粉末中的硅氮化和碳化。氮化和碳化热处理中的升温速度至少在从硅的氮化和碳化开始发生的温度到复合粉末的温度的范围内至少在2℃/ 保持硅的氮化和碳化。复合烧结体是通过在1600℃〜2200℃的温度下烧结这样的复合粉末来制造的。

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