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1. 发明授权

US07528049B2 Method for manufacturing bonded SOI wafer and bonded SOI wafer manufactured thereby 有权
标题翻译：用于制造由此制造的接合SOI晶片和键合SOI晶片的方法
公开(公告)号：US07528049B2
公开(公告)日：2009-05-05
申请号：US11878255
申请日：2007-07-23
申请人： Yasunobu Ikeda , Shinichi Tomita , Hiroyuki Miyahara
发明人： Yasunobu Ikeda , Shinichi Tomita , Hiroyuki Miyahara
IPC分类号： H01L21/00
CPC分类号： H01L21/02052 , H01L21/3226 , H01L21/76256
摘要： A bonded SOI wafer is manufactured by performing bonding in a state where organics exist on a surface of an active layer wafer and/or on a surface of a supporting wafer and performing heat-treating for bonding reinforcement in a state where the organics are trapped at an interface between the active layer wafer and the supporting wafer to form crystal defects at an interface between the active layer wafer and an oxide film and/or at an interface between the supporting wafer and the oxide film. This allows a simple and inexpensive gettering source to be formed at the interface between an SOI layer and an insulating layer (oxide film). Also, the bonded SOI wafer of the present invention that is manufactured by this method can effectively remove heavy-metal impurities that may have a negative impact on the characteristics of the device and/or the withstand voltage characteristics of the oxide film. Therefore, the manufacturing method and the bonded SOI wafer according to the present invention can be utilized widely as an SOI wafer with improved device characteristics or as a manufacturing method thereof.
摘要翻译：通过在有源层晶片的表面和/或支撑晶片的表面上存在有机物的状态下进行结合，并且在有机物被捕获的状态下进行接合强化的热处理来制造键合SOI晶片有源层晶片和支撑晶片之间的界面，以在有源层晶片和氧化物膜之间的界面处和/或在支撑晶片和氧化物膜之间的界面处形成晶体缺陷。这允许在SOI层和绝缘层（氧化物膜）之间的界面处形成简单且廉价的吸气源。此外，通过该方法制造的本发明的接合SOI晶片可以有效地去除可能对器件的特性和/或氧化膜的耐电压特性具有负面影响的重金属杂质。因此，根据本发明的制造方法和接合SOI晶片可以广泛地用作具有改进的器件特性的SOI晶片或其制造方法。

2. 发明申请

US20080020541A1 Method for manufacturing bonded SOI wafer and bonded SOI wafer manufactured thereby 有权
标题翻译：用于制造由此制造的接合SOI晶片和键合SOI晶片的方法
公开(公告)号：US20080020541A1
公开(公告)日：2008-01-24
申请号：US11878255
申请日：2007-07-23
申请人： Yasunobu Ikeda , Shinichi Tomita , Hiroyuki Miyahara
发明人： Yasunobu Ikeda , Shinichi Tomita , Hiroyuki Miyahara
IPC分类号： H01L21/762 , H01L29/00
CPC分类号： H01L21/02052 , H01L21/3226 , H01L21/76256
摘要： A bonded SOI wafer is manufactured by performing bonding in a state where organics exist on a surface of an active layer wafer and/or on a surface of a supporting wafer and performing heat-treating for bonding reinforcement in a state where the organics are trapped at an interface between the active layer wafer and the supporting wafer to form crystal defects at an interface between the active layer wafer and an oxide film and/or at an interface between the supporting wafer and the oxide film. This allows a simple and inexpensive gettering source to be formed at the interface between an SOI layer and an insulating layer (oxide film). Also, the bonded SOI wafer of the present invention that is manufactured by this method can effectively remove heavy-metal impurities that may have a negative impact on the characteristics of the device and/or the withstand voltage characteristics of the oxide film. Therefore, the manufacturing method and the bonded SOI wafer according to the present invention can be utilized widely as an SOI wafer with improved device characteristics or as a manufacturing method thereof.
摘要翻译：通过在有源层晶片的表面和/或支撑晶片的表面上存在有机物的状态下进行结合，并且在有机物被捕获的状态下进行接合强化的热处理来制造键合SOI晶片有源层晶片和支撑晶片之间的界面，以在有源层晶片和氧化物膜之间的界面处和/或在支撑晶片和氧化物膜之间的界面处形成晶体缺陷。这允许在SOI层和绝缘层（氧化物膜）之间的界面处形成简单且廉价的吸气源。此外，通过该方法制造的本发明的接合SOI晶片可以有效地去除可能对器件的特性和/或氧化膜的耐电压特性具有负面影响的重金属杂质。因此，根据本发明的制造方法和接合SOI晶片可以广泛地用作具有改进的器件特性的SOI晶片或其制造方法。

3. 发明授权

US06620285B2 Method for bonding substrates 有权
公开(公告)号：US06620285B2
公开(公告)日：2003-09-16
申请号：US09972851
申请日：2001-10-10
申请人： Shinichi Tomita , Shuhei Tsuda , Yasunobu Ikeda
发明人： Shinichi Tomita , Shuhei Tsuda , Yasunobu Ikeda
IPC分类号： B29C6500
CPC分类号： B32B38/1833 , B32B2038/1891 , H01L21/76251 , Y10T156/1702 , Y10T156/1744
摘要： A method for bonding substrates to tightly bond two overlaid substrates comprises the steps of: aligning the substrates, freely falling a second substrate onto a first substrate to overlay the first and second substrates; interposing an air layer between the joining surfaces of the first and second substrates, aligning the first and second substrates and holding the aligned first and second substrates; and pressing one point of the aligned two substrates. Thus, the bonded substrates which can be aligned accurately and free from occurrence of voids or the like can be obtained.

4. 发明授权

US07781313B2 Method for manufacturing silicon wafer 有权
标题翻译：硅晶片制造方法
公开(公告)号：US07781313B2
公开(公告)日：2010-08-24
申请号：US12584269
申请日：2009-09-01
申请人： Shinichi Tomita , Masao Yoshimuta , Yasuyuki Hashimoto , Akira Nakashima
发明人： Shinichi Tomita , Masao Yoshimuta , Yasuyuki Hashimoto , Akira Nakashima
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/304 , H01L21/02024 , H01L21/2007 , H01L21/76256
摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.
摘要翻译：硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造其厚度从晶片外周朝向晶片中心减小的凹晶片。然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个主表面。通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。

5. 发明申请

US20080132032A1 METHOD FOR MANUFACTURING SILICON WAFER 有权
标题翻译：制造硅波的方法
公开(公告)号：US20080132032A1
公开(公告)日：2008-06-05
申请号：US11946643
申请日：2007-11-28
申请人： Shinichi Tomita , Masao Yoshimuta , Yasuyuki Hashimoto , Akira Nakashima
发明人： Shinichi Tomita , Masao Yoshimuta , Yasuyuki Hashimoto , Akira Nakashima
IPC分类号： H01L21/30
CPC分类号： H01L21/304 , H01L21/02024 , H01L21/2007 , H01L21/76256
摘要： A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface. By the method, an SOI wafer or an epitaxial silicon wafer having a high degree of flatness is obtained.
摘要翻译：硅晶片的制造方法的特征在于对薄盘状硅晶片进行研磨抛光中的一个或两个以给出在晶片表面的中心部分凹陷的碗形翘曲。吸附并保持薄盘形硅晶片的一个主表面，并且对另一个主表面进行研磨和抛光中的一个或两个以制造厚度从晶片外周朝向晶片中心增加的凸形晶片，或者制造其厚度从晶片外周朝向晶片中心减小的凹晶片。然后，基于弹性变形，另一个主表面被吸附并保持成一个主表面侧的中心或周边突出。研磨抛光中的一个或两个相对于一个主表面进行，以平坦化主表面，并且释放吸附和保持以产生碗形翘曲，其在中心部分处凹入另一个主表面或一个主表面。通过该方法，获得具有高度平坦度的SOI晶片或外延硅晶片。

6. 发明申请

US20050014347A1 Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method 有权
标题翻译：层叠基板，基板的制造方法以及用于该方法的晶片外周加压夹具
公开(公告)号：US20050014347A1
公开(公告)日：2005-01-20
申请号：US10499028
申请日：2003-05-02
申请人： Shinichi Tomita , Kouji Yoshimaru
发明人： Shinichi Tomita , Kouji Yoshimaru
IPC分类号： H01L21/00 , H01L21/68 , H01L21/762 , H01L21/30
CPC分类号： B24B37/30 , H01L21/76251
摘要： Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After the surface grinding, a periphery removing polishing is applied from an active layer wafer side of a bonding wafer so that a peripheral region of the active layer may be removed and a central region thereof may be left un-removed. Consequently, a periphery grinding and a periphery etching according to the prior art can be eliminated. Furthermore, an etch pit on a circumferential face of a wafer which could be caused by the periphery etching and a contamination or a scratching in an SOI layer which could be caused by a silicon oxide film left un-ground-off can be prevented, thereby achieving high yield and low cost.
摘要翻译：提供了通过在表面研磨后对其进行研磨而除去有源层的周边区域的不良接合部的接合基板，同一基板的制造方法和晶片周边加压夹具。在表面研磨之后，从接合晶片的有源层晶片侧施加周边去除抛光，使得有源层的周边区域可以被去除并且其中心区域可以被去除。因此，可以消除根据现有技术的周边磨削和周边蚀刻。此外，可以防止可能由外围蚀刻引起的晶片圆周面上的蚀刻凹坑以及可能由未氧化硅膜导致的SOI层中的污染或刮擦而导致的，实现高产量和低成本。

7. 发明授权

US09058957B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US09058957B2
公开(公告)日：2015-06-16
申请号：US14232279
申请日：2012-05-28
申请人： Kunji Shigeto , Mitsugu Sato , Noriko Iizumi , Hiroyuki Noda , Masako Nishimura , Shunya Watanabe , Mami Konomi , Shinichi Tomita , Ryuichiro Tamochi
发明人： Kunji Shigeto , Mitsugu Sato , Noriko Iizumi , Hiroyuki Noda , Masako Nishimura , Shunya Watanabe , Mami Konomi , Shinichi Tomita , Ryuichiro Tamochi
IPC分类号： H01J37/153 , H01J37/10 , H01J37/28 , H01J37/26
CPC分类号： H01J37/153 , H01J37/10 , H01J37/265 , H01J37/28 , H01J2237/1532 , H01J2237/21
摘要： A charged particle beam apparatus is provided with a parameter adjustment practice function for allowing any user to easily learn manual focus adjustment and stigma adjustment. Control conditions of the focus arrangement of an objective lens, an X-stigmator and a Y-stigmator are set according to the user's operation. According to a group of the focus adjustment, an X-stigma adjustment and a Y-stigma adjustment which are set, a practice-purpose image corresponding to the control conditions is read out from a storage device and is displayed on a screen.
摘要翻译：带电粒子束装置具有用于允许任何用户容易地学习手动聚焦调整和柱头调节的参数调整实践功能。根据使用者的操作设定物镜，X形扫描器和Y型标枪器的聚焦结构的控制条件。根据一组焦点调整，设置了X字样调整和Y字符调整，从存储装置读出与控制条件相对应的实用目的图像，并将其显示在屏幕上。

8. 发明申请

US20140131590A1 CHARGED PARTICLE BEAM APPARATUS 有权
标题翻译：充电颗粒光束装置
公开(公告)号：US20140131590A1
公开(公告)日：2014-05-15
申请号：US14232279
申请日：2012-05-28
申请人： Kunji Shigeto , Mitsugu Sato , Noriko Iizumi , Hiroyuki Noda , Masako Nishimura , Shunya Watanabe , Mami Konomi , Shinichi Tomita , Ryuichiro Tamochi
发明人： Kunji Shigeto , Mitsugu Sato , Noriko Iizumi , Hiroyuki Noda , Masako Nishimura , Shunya Watanabe , Mami Konomi , Shinichi Tomita , Ryuichiro Tamochi
IPC分类号： H01J37/153 , H01J37/10
CPC分类号： H01J37/153 , H01J37/10 , H01J37/265 , H01J37/28 , H01J2237/1532 , H01J2237/21
摘要： In recent years, a range of users for a charged particle beam apparatus such as a scanning electron microscope has been broadened. All users want to learn a manual adjustment technology, but it is very difficult to adjust all parameters for observation to have an appropriate value. Therefore, a beginner is unlikely to sufficiently show a performance of an apparatus. This disclosure aims to provide the charged particle beam apparatus including a parameter adjustment practice function for allowing any user to easily learn the manual adjustment technology.In order to solve the above-described problem, there is provided means for practicing a focus adjustment and a stigma adjustment. Control conditions of the focus arrangement of an objective lens, an X-stigmator and a Y-stigmator are set according to the user's operation. According to a group of the focus adjustment, an X-stigma adjustment and a Y-stigma adjustment which are set, a practice-purpose image corresponding to the control conditions is read out from a storage device and is displayed on a screen.
摘要翻译：近年来，扫描型电子显微镜等带电粒子束装置的使用范围已经扩大。所有用户想要学习手动调整技术，但是很难调整所有观察参数以获得适当的值。因此，初学者不太可能充分显示设备的性能。本公开旨在提供包括用于允许任何用户容易地学习手动调整技术的参数调整实践功能的带电粒子束装置。为了解决上述问题，提供了用于实施焦点调整和柱头调节的装置。根据使用者的操作设定物镜，X形扫描器和Y型标枪器的聚焦结构的控制条件。根据一组焦点调整，设置了X字样调整和Y字符调整，从存储装置读出与控制条件相对应的实用目的图像，并将其显示在屏幕上。

9. 发明授权

US08143573B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US08143573B2
公开(公告)日：2012-03-27
申请号：US12490775
申请日：2009-06-24
申请人： Sukehiro Ito , Junichi Katane , Shigeru Kawamata , Shinichi Tomita
发明人： Sukehiro Ito , Junichi Katane , Shigeru Kawamata , Shinichi Tomita
IPC分类号： G02F1/1335 , G01K1/08
CPC分类号： H01J37/1478 , H01J37/153 , H01J37/265 , H01J37/28 , H01J2237/2611
摘要： A charged particle beam impinging on a specimen is set to have left and right tilt angles corresponding to a parallactic angle. A control unit is provided which scans the beam over the specimen while giving a left tilt and a right tilt corresponding to the parallactic angle alternately to the beam on each scanning line. In this way, images are acquired. A three-dimensional image in which deterioration of the resolution is suppressed is displayed in real time by combining aberration cancellation means with the control of the beam according to the parallactic angle. The aberration cancellation means uses an optical system having plural stages of lenses to provide overall cancellation of aberrations by making use of the action of a lens to deflect the beam back to the optical axis.
摘要翻译：照射在试样上的带电粒子束被设定为具有对应于副视角的左右倾斜角。提供了一种控制单元，其在垂直于每个扫描线上的光束上交替地向左侧倾斜和对准视角的右侧倾斜扫描样本上的光束。以这种方式，获取图像。通过将像差消除装置与根据近视角的光束的控制组合来实时显示分辨率的劣化被抑制的三维图像。像差消除装置使用具有多级透镜的光学系统，通过利用透镜的作用将光束偏转回光轴来提供像差的整体消除。

10. 发明授权

US07378332B2 Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method 有权
标题翻译：层叠基板，基板的制造方法以及用于该方法的晶片外周加压夹具
公开(公告)号：US07378332B2
公开(公告)日：2008-05-27
申请号：US10499028
申请日：2003-05-02
申请人： Shinichi Tomita , Kouji Yoshimaru
发明人： Shinichi Tomita , Kouji Yoshimaru
IPC分类号： H01L21/30
CPC分类号： B24B37/30 , H01L21/76251
摘要： Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After the surface grinding, a periphery removing polishing is applied from an active layer wafer side of a bonding wafer so that a peripheral region of the active layer may be removed and a central region thereof may be left un-removed. Consequently, a periphery grinding and a periphery etching according to the prior art can be eliminated. Furthermore, an etch pit on a circumferential face of a wafer which could be caused by the periphery etching and a contamination or a scratching in an SOI layer which could be caused by a silicon oxide film left un-ground-off can be prevented, thereby achieving high yield and low cost.
摘要翻译：提供了通过在表面研磨后对其进行研磨而除去有源层的周边区域的不良接合部的接合基板，同一基板的制造方法和晶片周边加压夹具。在表面研磨之后，从接合晶片的有源层晶片侧施加周边去除抛光，使得有源层的周边区域可以被去除并且其中心区域可以被去除。因此，可以消除根据现有技术的周边磨削和周边蚀刻。此外，可以防止可能由外围蚀刻引起的晶片圆周面上的蚀刻凹坑以及可能由未氧化硅膜导致的SOI层中的污染或刮擦而导致的，实现高产量和低成本。

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