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1. 发明授权

US5030550A Developer for positive type photoresists 失效
标题翻译：正型光刻胶的开发商
公开(公告)号：US5030550A
公开(公告)日：1991-07-09
申请号：US333928
申请日：1989-04-06
申请人： Yasumasa Kawabe , Hiroshi Matsumoto , Tadayoshi Kokubo
发明人： Yasumasa Kawabe , Hiroshi Matsumoto , Tadayoshi Kokubo
IPC分类号： G03C1/72 , G03F7/32 , H01L21/027
CPC分类号： G03F7/322
摘要： A positive photoresist developer containing a basic compound and from 10 to 10,000 ppm of a non-ionic surfactant represented by formula (I): ##STR1## wherein X represents an oxyethylene group; Y represents an oxypropylene group; R represents hydrogen, an alkyl group containing from 1 to 8 carbon atoms, R', or ##STR2## R' represents --O--(X).sub.m (Y).sub.n --H; R" represents R' of an alkyl group containing l carbon atoms; m and n each is an integer from 1 to 50, provided that m:n is from 20:80 to 80:20; p is 0 or 1, and q and s each is o or an integer from 1 to 4, provided that p+q+s=4; and l is an integer from 1 to 4; and r is an integer from 1 to 8, provided that l+r is an integer of 9 or more. The developer has superior art in forming properties, and prevents film residues, surface layer peeling, and film reduction.
摘要翻译：含有碱性化合物的正性光致抗蚀剂显影剂和10〜10,000ppm由式（I）表示的非离子型表面活性剂：其中X表示氧化乙烯基; Y表示氧丙烯基; R表示氢，含有1至8个碳原子的烷基，R'或R'表示-O-（X）m（Y）n -H; R“表示含有1个碳原子的烷基的R'; m和n各自为1至50的整数，条件是m：n为20:80至80:20; p为0或1，q和s各自为o或1至4的整数，条件是p + q + s = 4; l为1〜4的整数，并且r为1〜8的整数，条件是l + r为9以上的整数。显影剂具有优异的成型性能，并且防止膜残留，表面层剥离和膜还原。

2. 发明授权

US5360692A Positive type 1,2-naphthoquinonediazide photoresist composition containing benzotriazole light absorbing agent 失效
标题翻译：含有苯并三唑光吸收剂的正型1,2-萘醌二叠氮化物光致抗蚀剂组合物
公开(公告)号：US5360692A
公开(公告)日：1994-11-01
申请号：US70795
申请日：1993-06-03
申请人： Yasumasa Kawabe , Kazuya Uenishi , Tadayoshi Kokubo
发明人： Yasumasa Kawabe , Kazuya Uenishi , Tadayoshi Kokubo
IPC分类号： G03F7/004 , C07D249/20 , C07D403/10 , G03F7/022 , G03F7/023 , G03F7/09 , H01L21/027 , H01L21/30 , G03C1/61
CPC分类号： C07D403/10 , C07D249/20 , G03F7/0226 , G03F7/091
摘要： There is disclosed a positive type photoresist composition comprising an alkali-soluble resin, a compound having a 1,2-naphthoquinonediazido group, and at least one light absorbing agent selected from the group consisting of the compounds represented by the following formulae [I] and [II], the content of said light absorbing agent being in the range of 0.1 to 10% by weight based on the total solid content of the composition: ##STR1## wherein X represents a hydrogen atom, a halogen atom, an alkyl group, an aralkyl group, an alkoxy group, an acyl group, or an aryl group; Y represents a single bond, an alkylene group, --O--, --S--, --SO.sub.2 --or ##STR2## R represents a hydrogen atom, an alkyl group, or an aralkyl group; m represents an integer from 1 to 3; and n represents an integer from 1 to 4. The content of light absorbing agent in said composition is in the range of from 0.3% by weight to 5% by weight, based on the total solid content of the composition.
摘要翻译：公开了一种正型光致抗蚀剂组合物，其包含碱溶性树脂，具有1,2-萘醌二叠氮基的化合物和至少一种选自由下式[I]和 [II]中，所述光吸收剂的含量相对于组合物的总固体成分为0.1〜10重量％的范围：其中，X表示氢原子卤素原子，烷基，芳烷基，烷氧基，酰基或芳基; Y表示单键，亚烷基，-O - ， - S - ， - SO 2 - 或R 2表示氢原子，烷基或芳烷基。 m表示1〜3的整数， n表示1〜4的整数。所述组合物中的光吸收剂含量为组合物总固体成分的0.3〜5重量％。

3. 发明授权

US4894311A Positive-working photoresist composition 失效
标题翻译：正光刻胶组合物
公开(公告)号：US4894311A
公开(公告)日：1990-01-16
申请号：US113951
申请日：1987-10-29
申请人： Kazuya Uenishi , Yasumasa Kawabe , Tadayoshi Kokubo
发明人： Kazuya Uenishi , Yasumasa Kawabe , Tadayoshi Kokubo
IPC分类号： G03C1/72 , G03F7/022 , H01L21/027 , H01L21/30
CPC分类号： G03F7/022
摘要： A positive-working photoresist composition containing an alkali-soluble novolak resin and a photosensitive compound represented by the formula ##STR1## wherein D.sub.1 and D.sub.2, which may be the same or different, each represents a 1,2-naphthoquinonediazido-5-sulfonyl group or a 1,2-naphthoquinonediazido-4-sulfonyl group; R.sub.1 and R.sub.2, which may be the same or different, each represents an alkoxy group, or an alkyl ester group; and a, b, c, and d each is 0 or an integer from 1 to 5, provided that (a+b).gtoreq.1 and (c+d).gtoreq.1.The photoresist composition is excellent in sensitivity and resolving power and forms a resist pattern having good sectional shape and high heat resistance on, for example, a semiconductor. The photoresist composition is also applicable for forming a resist pattern having a line width of less than 1 .mu.m.
摘要翻译：含有碱溶性酚醛清漆树脂和式（I）表示的光敏化合物的正性光致抗蚀剂组合物，其中D1和D2可以相同或不同，表示1,2-萘醌二叠氮基-5 磺酰基或1,2-萘醌二叠氮基-4-磺酰基; R 1和R 2可以相同或不同，各自表示烷氧基或烷基酯基; 并且a，b，c和d各自为0或1至5的整数，条件是（a + b）> / = 1和（c + d）> / = 1。光致抗蚀剂组合物的灵敏度和分辨能力优异，并且在例如半导体上形成具有良好截面形状和高耐热性的抗蚀剂图案。光致抗蚀剂组合物也可用于形成线宽小于1μm的抗蚀剂图案。

4. 发明授权

US4863828A Positive-working o-quinone diazide photoresist composition 失效
标题翻译：正活性邻醌二叠氮光致抗蚀剂组合物
公开(公告)号：US4863828A
公开(公告)日：1989-09-05
申请号：US145862
申请日：1988-01-20
申请人： Yasumasa Kawabe , Kazuya Uenishi , Tadayoshi Kokubo
发明人： Yasumasa Kawabe , Kazuya Uenishi , Tadayoshi Kokubo
IPC分类号： G03C1/72 , G03F7/022
CPC分类号： G03F7/0226
摘要： A positive-working photoresist composition is disclosed, which comprises a light-sensitive substance of 1,2-naphthoquinonediazide-4- and/or -5-sulfonate of 2,3,4,3',4',5'-hexahydroxybenzophenone and an alkali-soluble novolak resin dissolved in ethyl lactate or methyl lactate.

5. 发明授权

US5576139A Positive type photoresist composition comprising a novolak resin made with a silica-magnesia solid catalyst 失效
标题翻译：正型光致抗蚀剂组合物，其包含用二氧化硅 - 氧化镁固体催化剂制备的酚醛清漆树脂
公开(公告)号：US5576139A
公开(公告)日：1996-11-19
申请号：US783346
申请日：1991-10-28
申请人： Kazuya Uenishi , Shiro Tan , Yasumasa Kawabe , Tadayoshi Kokubo
发明人： Kazuya Uenishi , Shiro Tan , Yasumasa Kawabe , Tadayoshi Kokubo
IPC分类号： C08G8/08 , C08L61/04 , C08L61/06 , G03F7/022 , G03F7/023 , H01L21/027
CPC分类号： C08G8/08 , G03F7/022 , G03F7/0236
摘要： A novel positive type photoresist composition is provided, comprising an alkali-soluble novolak resin obtained by the condensation of substituted or unsubstituted phenols and aldehydes in the presence of a silica-magnesia solid catalyst and a light-sensitive material containing 1,2-naphthoquinone-diazido-5-(and/or -4-) sulfonate as main component.
摘要翻译：提供了一种新型的正型光致抗蚀剂组合物，其包含通过在二氧化硅 - 氧化镁固体催化剂和含有1,2-萘醌的固体催化剂存在下缩合取代或未取代的酚和醛而获得的碱溶性酚醛清漆树脂，重氮基-5-（和/或-4-）磺酸盐为主要成分。

6. 发明授权

US5340688A Positive type photoresist composition 失效
标题翻译：正型光致抗蚀剂组合物
公开(公告)号：US5340688A
公开(公告)日：1994-08-23
申请号：US15578
申请日：1993-02-10
申请人： Yasumasa Kawabe , Toshiaki Aoai , Tadayoshi Kokubo
发明人： Yasumasa Kawabe , Toshiaki Aoai , Tadayoshi Kokubo
IPC分类号： G03F7/022 , H01L21/027 , G03F7/021 , G03F7/30
CPC分类号： G03F7/022
摘要： Disclosed is a novel positive type photoresist composition comprising a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic ester of a member selected from the group consisting of the polyhydroxy compounds represented by the following formula (I), (II) or (III) and an alkali-soluble resin: ##STR1## wherein the variables of Formula I are defined in the specification; ##STR2## wherein the variables of Formula II are defined in the specification; ##STR3## wherein the variables of Formula III are defined in the specification.
摘要翻译：公开了一种新型的正型光致抗蚀剂组合物，其包含选自由下式（I）表示的多羟基化合物，（I），（I）表示的多羟基化合物的组分的1,2-萘醌二叠氮基-5-（和/或-4-）磺酸酯， II）或（III）和碱溶性树脂：其中式I的变量在说明书中定义; （II）其中式II的变量在说明书中定义; （III）其中式III的变量在本说明书中定义。

7. 发明授权

US5153096A Positive type photoresist composition comprising as a photosensitive ingredient a derivative of a triphenylmethane condensed with an o-quinone diazide 失效
标题翻译：正型光致抗蚀剂组合物，其包含与邻醌重氮化物缩合的三苯甲烷的衍生物作为感光成分
公开(公告)号：US5153096A
公开(公告)日：1992-10-06
申请号：US670513
申请日：1991-03-18
申请人： Kazuya Uenishi , Yasumasa Kawabe , Tadayoshi Kokubo
发明人： Kazuya Uenishi , Yasumasa Kawabe , Tadayoshi Kokubo
IPC分类号： G03C1/72 , G03F7/022 , H01L21/027
CPC分类号： G03F7/022
摘要： A positive type photoresist composition comprising at least one light-sensitive material, as defined herein, and an alkali-soluble novolak resin, has a high resolving power, particularly when used in semiconductor devices, accurately reproduces mask dimensions over a wide photomask line width range, from a resist pattern in a cross-sectional form having a high aspect ratio in a pattern having a line width of no greater than 1 .mu.m, has a wide developing latitude and excellent heat resistance.
摘要翻译：包含如本文所定义的至少一种感光材料和碱溶性酚醛清漆树脂的正型光致抗蚀剂组合物具有高分辨能力，特别是当用于半导体器件时，在宽的光掩模线宽度范围内精确地再现掩模尺寸从具有不大于1μm的线宽的图案的具有高纵横比的横截面形式的抗蚀剂图案具有宽的显影宽度和优异的耐热性。

8. 发明授权

US5429905A Positive working photoresist composition containing naphthoquinone diazide sulfonic acid ester of polyhydroxy compound 失效
标题翻译：含有多羟基化合物的萘醌二叠氮磺酸酯的正性光刻胶组合物
公开(公告)号：US5429905A
公开(公告)日：1995-07-04
申请号：US227011
申请日：1994-04-13
申请人： Shiro Tan , Yasumasa Kawabe , Tadayoshi Kokubo
发明人： Shiro Tan , Yasumasa Kawabe , Tadayoshi Kokubo
IPC分类号： G03F7/022 , H01L21/027 , G03F7/023
CPC分类号： G03F7/022
摘要： The present invention relates to a positive-working photoresist composition comprising at least one of the 1,2-naphthoquinonediazido-5- sulfonic acid ester of a polyhydroxy compound represented by formula (1) and the 1,2-naphthoquinonediazido-4-sulfonic acid ester of a polyhydroxy compound represented by formula (1): ##STR1## wherein R represents a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, an alkyl group having from 1 to 6 carbon atoms, an aryl group, or an alkenyl group; and R.sub.1 to R.sub.15, which may be the same or different, each represents a hydrogen atom, a hydroxy group, a halogen atom, an alkyl group having from 1 to 6 carbon atoms, an alkoxy group, or a substituted or unsubstituted cycloalkyl group, with the proviso that at least one of R.sub.1 to R.sub.15 is a substituted or unsubstituted cycloalkyl group.
摘要翻译：本发明涉及一种正性光致抗蚀剂组合物，其包含由式（1）表示的多羟基化合物的1,2-萘醌二叠氮基-5-磺酸酯和1,2-萘醌二叠氮基-4-磺酸中的至少一种由式（1）表示的多羟基化合物的酯：其中R表示氢原子，羟基，卤素原子，硝基，具有1至6个碳原子的烷基，芳基基团或烯基; R 1〜R 15可以相同或不同，表示氢原子，羟基，卤素原子，碳原子数1〜6的烷基，烷氧基或取代或未取代的环烷基，条件是R 1至R 15中的至少一个是取代或未取代的环烷基。

9. 发明授权

US4871645A Positive-working photoresist composition 失效
标题翻译：正光刻胶组合物
公开(公告)号：US4871645A
公开(公告)日：1989-10-03
申请号：US202780
申请日：1988-06-06
申请人： Kazuya Uenishi , Tadayoshi Kokubo , Yasumasa Kawabe
发明人： Kazuya Uenishi , Tadayoshi Kokubo , Yasumasa Kawabe
IPC分类号： G03C1/00 , G03C1/72 , G03F7/022 , G03F7/075
CPC分类号： G03F7/022 , G03F7/0755
摘要： A positive-working photoresist composition is disclosed. The composition comprises a light-sensitive compound represented by general formula (A) and an alkali-soluble novolak resin. ##STR1## wherein R.sub.a, R.sub.b, R.sub.c, R.sub.d, R.sub.e and R.sub.f, which may be the same or different, each represents H, --X--R.sub.1, ##STR2## provided that among the six substituents represented by R.sub.a to R.sub.f, the number of the substituents representing H is a real number of more than 0 and not more than 3 calculated in terms of average value per molecule of the light-sensitive compound, the number of the substituents representing --X--R.sub.1 is a real number of not less than 0.3 calculated in terms of average value per molecule of the light-sensitive compound, and the number of the substituents representing ##STR3## is a real number of not less than 2.5 caluclated in terms of average value per molecule of the light-sensitive compound; X represents a simple bond, ##STR4## R.sub.1 represents a substituted or unsubstituted aliphatic group or a substituted or unsubstituted aromatic group; and R.sub.2 and R.sub.3, which may be the same or different, each represents H or a substituted or unsubstituted aliphatic group or a substituted or unsubstituted aromatic group.The positive-working photoresist composition is excellent in resolving power, speed, resist profile and heat resistance and is particularly suitable for forming a pattern of fine structure.
摘要翻译：公开了一种正性光致抗蚀剂组合物。该组合物包含由通式（A）表示的感光性化合物和碱溶性酚醛清漆树脂。（A）其中Ra，Rb，Rc，Rd，Re和Rf可以相同或不同，各自表示H，-X-R1，，条件是在由Ra至Rf表示的六个取代基中，代表H的取代基的数目是以每分子光敏化合物的平均值计算的大于0且不大于3的实数，表示-X-R1的取代基的数目是实数以每分子感光性化合物的平均值计算不小于0.3，代表的取代基的数目是以每分子光的平均值计算的不少于2.5的实数敏感化合物; X表示简单的键，R 1表示取代或未取代的脂族基或取代或未取代的芳基; 并且R 2和R 3可以相同或不同，表示H或取代或未取代的脂族基团或取代或未取代的芳族基团。正性光致抗蚀剂组合物的分辨能力，速度，抗蚀剂轮廓和耐热性优异，特别适合于形成精细结构的图案。

10. 发明授权

US5494773A Positive photoresist composition comprising a novolak resin having a cycloalkylidene-bisphenol group 失效
标题翻译：正型光致抗蚀剂组合物，其包含具有环亚烷基 - 双酚基团的酚醛清漆树脂
公开(公告)号：US5494773A
公开(公告)日：1996-02-27
申请号：US399046
申请日：1995-03-06
申请人： Shiro Tan , Yasumasa Kawabe , Tadayoshi Kokubo
发明人： Shiro Tan , Yasumasa Kawabe , Tadayoshi Kokubo
IPC分类号： G03F7/022 , G03F7/023 , H01L21/027
CPC分类号： G03F7/0236
摘要： A positive photoresist composition comprising an alkali-soluble novolak resin and a 1,2-quinonediazide compound is described, wherein the alkali-soluble novolak resin contains a novolak resin to be obtained by condensing a mixture of (a) at least one phenol represented by the following formula (1) and at least one compound represented by the following formula (2) and (b) at least one aldehyde: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different and each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, an alkenyl group, an aryl group, an aralkyl group, an alkoxycarbonyl group or an arylcarbonyl group; R.sub.4, R.sub.5, R.sub.6 and R.sub.7 are the same or different and each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, an alkenyl group, an aryl group or an aralkyl group; and n represents an integer of from 4 to 7.
摘要翻译：描述了包含碱溶性酚醛清漆树脂和1,2-醌二叠氮化合物的正型光致抗蚀剂组合物，其中碱溶性酚醛清漆树脂含有酚醛清漆树脂，其通过将（a）至少一种由（1）和至少一种由下式（2）和（b）表示的化合物至少一种醛：其中R 1，R 2和R 3相同或不同，各自表示氢原子，羟基，卤素原子，烷基，烷氧基，烯基，芳基，芳烷基，烷氧基羰基或芳基羰基; R4，R5，R6和R7相同或不同，各自表示氢原子，羟基，卤素原子，烷基，环烷基，烷氧基，烯基，芳基或芳烷基 ; n表示4〜7的整数。

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