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1. 发明授权

US08546786B2 Stacked multiple cell nonvolatile memory device 有权
标题翻译：堆叠多单元非易失性存储器件
公开(公告)号：US08546786B2
公开(公告)日：2013-10-01
申请号：US13344680
申请日：2012-01-06
申请人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
发明人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
IPC分类号： H01L45/00 , H01L29/06
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译：非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构构件，并且包括贯穿所述多个电介质膜的多个电极膜和所述多个所述电极膜的多个电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。

2. 发明申请

US20120104340A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20120104340A1
公开(公告)日：2012-05-03
申请号：US13344680
申请日：2012-01-06
申请人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
发明人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
IPC分类号： H01L45/00
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译：非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构构件，并且包括贯穿所述多个电介质膜的多个电极膜和所述多个所述电极膜的多个电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。

3. 发明授权

US08115245B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08115245B2
公开(公告)日：2012-02-14
申请号：US12554581
申请日：2009-09-04
申请人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
发明人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
IPC分类号： H01L29/788
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译：非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构件，并且包括穿过所述多个电介质膜的多个电极膜和所述多个电极膜沿所述多个电极膜的堆叠方向电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。

4. 发明申请

US20100078622A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20100078622A1
公开(公告)日：2010-04-01
申请号：US12554581
申请日：2009-09-04
申请人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
发明人： Yasuhito Yoshimizu , Fumiki Aiso , Atsushi Fukumoto , Takashi Nakao
IPC分类号： H01L27/115 , H01L45/00 , H01L21/8247
CPC分类号： H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2481 , H01L29/792 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory device includes: a substrate; a stacked structure member including a plurality of dielectric films and a plurality of electrode films alternately stacked on the substrate and including a through-hole penetrating through the plurality of the dielectric films and the plurality of the electrode films in a stacking direction of the plurality of the dielectric films and the plurality of the electrode films; a semiconductor pillar provided in the through-hole; and a charge storage layer provided between the semiconductor pillar and each of the plurality of the electrode films. At least one of the dielectric films includes a film generating one of a compressive stress and a tensile stress, and at least one of the electrode films includes a film generating the other of the compressive stress and the tensile stress.
摘要翻译：非易失性存储器件包括：衬底; 包括多个电介质膜和交替层叠在所述基板上的多个电极膜的堆叠结构构件，并且包括贯穿所述多个电介质膜的多个电极膜和所述多个所述电极膜的多个电介质膜和多个电极膜; 设置在所述通孔中的半导体柱; 以及设置在所述半导体柱与所述多个所述电极膜中的每一个之间的电荷存储层。电介质膜中的至少一个包括产生压缩应力和拉伸应力之一的膜，并且至少一个电极膜包括产生另一个压缩应力和拉伸应力的膜。

5. 发明申请

US20100117135A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100117135A1
公开(公告)日：2010-05-13
申请号：US12564349
申请日：2009-09-22
申请人： Makoto MIZUKAMI , Kiyohito Nishihara , Masaki Kondo , Takashi Izumida , Hirokazu Ishida , Atsushi Fukumoto , Fumiki Aiso , Daigo Ichinose , Tadashi Iguchi
发明人： Makoto MIZUKAMI , Kiyohito Nishihara , Masaki Kondo , Takashi Izumida , Hirokazu Ishida , Atsushi Fukumoto , Fumiki Aiso , Daigo Ichinose , Tadashi Iguchi
IPC分类号： H01L27/12 , H01L21/86
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device is formed on a SOI substrate having a semiconductor substrate, a buried oxide film formed on the semiconductor substrate, and a semiconductor layer formed on the buried oxide film, the semiconductor substrate having a first conductive type, the semiconductor layer having a second conductive type, wherein the buried oxide film has a first opening opened therethrough for communicating the semiconductor substrate with the semiconductor layer, the semiconductor layer is arranged to have a first buried portion buried in the first opening in contact with the semiconductor substrate and a semiconductor layer main portion positioned on the first buried portion and on the buried oxide film, the semiconductor substrate has a connection layer buried in a surface of the semiconductor substrate and electrically connected to the first buried portion in the first opening, the connection layer having the second conductive type, and the semiconductor device includes a contact electrode buried in a second opening, a side surface of the contact electrode being connected to the semiconductor layer main portion, a bottom surface of the contact electrode being connected to the connection layer, the second opening passing through the semiconductor layer main portion and the buried oxide film, and the second opening reaching a surface portion of the connection layer.
摘要翻译：半导体器件形成在具有半导体衬底的SOI衬底上，形成在半导体衬底上的掩埋氧化膜以及形成在掩埋氧化膜上的半导体层，该半导体衬底具有第一导电类型，该半导体层具有第二导电型导电型，其中所述掩埋氧化物膜具有通过其开口的第一开口，用于使所述半导体衬底与所述半导体层连通，所述半导体层被布置为具有埋在所述第一开口中的与所述半导体衬底接触的第一掩埋部分和半导体层主要部分位于第一掩埋部分和掩埋氧化膜上，半导体衬底具有埋在半导体衬底的表面中并与第一开口中的第一掩埋部分电连接的连接层，连接层具有第二导电类型，并且半导体器件包括接触电极阴极埋入第二开口中，接触电极的侧表面连接到半导体层主体部分，接触电极的底表面连接到连接层，第二开口穿过半导体层主体部分和埋设氧化膜，第二开口到达连接层的表面部分。

6. 发明授权

US07986000B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07986000B2
公开(公告)日：2011-07-26
申请号：US12564349
申请日：2009-09-22
申请人： Makoto Mizukami , Kiyohito Nishihara , Masaki Kondo , Takashi Izumida , Hirokazu Ishida , Atsushi Fukumoto , Fumiki Aiso , Daigo Ichinose , Tadashi Iguchi
发明人： Makoto Mizukami , Kiyohito Nishihara , Masaki Kondo , Takashi Izumida , Hirokazu Ishida , Atsushi Fukumoto , Fumiki Aiso , Daigo Ichinose , Tadashi Iguchi
IPC分类号： H01L29/76 , H01L21/00 , H01L21/84
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/11521 , H01L27/11524
摘要： A semiconductor device is formed on a SOI substrate having a semiconductor substrate, a buried oxide film formed on the semiconductor substrate, and a semiconductor layer formed on the buried oxide film, the semiconductor substrate having a first conductive type, the semiconductor layer having a second conductive type, wherein the buried oxide film has a first opening opened therethrough for communicating the semiconductor substrate with the semiconductor layer, the semiconductor layer is arranged to have a first buried portion buried in the first opening in contact with the semiconductor substrate and a semiconductor layer main portion positioned on the first buried portion and on the buried oxide film, the semiconductor substrate has a connection layer buried in a surface of the semiconductor substrate and electrically connected to the first buried portion in the first opening, the connection layer having the second conductive type, and the semiconductor device includes a contact electrode buried in a second opening, a side surface of the contact electrode being connected to the semiconductor layer main portion, a bottom surface of the contact electrode being connected to the connection layer, the second opening passing through the semiconductor layer main portion and the buried oxide film, and the second opening reaching a surface portion of the connection layer.
摘要翻译：半导体器件形成在具有半导体衬底的SOI衬底上，形成在半导体衬底上的掩埋氧化膜以及形成在掩埋氧化膜上的半导体层，该半导体衬底具有第一导电类型，该半导体层具有第二导电型导电型，其中所述掩埋氧化物膜具有通过其开口的第一开口，用于使所述半导体衬底与所述半导体层连通，所述半导体层被布置为具有埋在所述第一开口中的与所述半导体衬底接触的第一掩埋部分和半导体层主要部分位于第一掩埋部分和掩埋氧化膜上，半导体衬底具有埋在半导体衬底的表面中并与第一开口中的第一掩埋部分电连接的连接层，连接层具有第二导电类型，并且半导体器件包括接触电极阴极埋入第二开口中，接触电极的侧表面连接到半导体层主体部分，接触电极的底表面连接到连接层，第二开口穿过半导体层主体部分和埋设氧化膜，第二开口到达连接层的表面部分。

7. 发明授权

US07651930B2 Method of manufacturing semiconductor storage device 有权
标题翻译：制造半导体存储装置的方法
公开(公告)号：US07651930B2
公开(公告)日：2010-01-26
申请号：US12146802
申请日：2008-06-26
申请人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
发明人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/115 , H01L21/76264 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203 , H01L29/66825
摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要翻译：一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在开口部。然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。然后，在硅单晶层上形成存储单元阵列。

8. 发明授权

US07863166B2 Method of manufacturing semiconductor storage device 有权
标题翻译：制造半导体存储装置的方法
公开(公告)号：US07863166B2
公开(公告)日：2011-01-04
申请号：US12646563
申请日：2009-12-23
申请人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
发明人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/115 , H01L21/76264 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203 , H01L29/66825
摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要翻译：一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在开口部。然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。然后，在硅单晶层上形成存储单元阵列。

9. 发明申请

US20090004833A1 METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US20090004833A1
公开(公告)日：2009-01-01
申请号：US12146802
申请日：2008-06-26
申请人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
发明人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/115 , H01L21/76264 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203 , H01L29/66825
摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要翻译：一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在开口部。然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。然后，在硅单晶层上形成存储单元阵列。

10. 发明申请

US20100112791A1 METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US20100112791A1
公开(公告)日：2010-05-06
申请号：US12646563
申请日：2009-12-23
申请人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
发明人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/115 , H01L21/76264 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203 , H01L29/66825
摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要翻译：一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在开口部。然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。然后，在硅单晶层上形成存储单元阵列。

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