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1. 发明申请

US20110233652A1 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：非挥发性半导体存储器件
公开(公告)号：US20110233652A1
公开(公告)日：2011-09-29
申请号：US13156727
申请日：2011-06-09
申请人： Yasuhiro Shino , Atsuhiro Sato , Takeshi Kamigaichi , Fumitaka Arai
发明人： Yasuhiro Shino , Atsuhiro Sato , Takeshi Kamigaichi , Fumitaka Arai
IPC分类号： H01L27/115
CPC分类号： H01L27/11578 , H01L27/11573 , H01L27/11582
摘要： A non-volatile semiconductor storage device includes: a memory cell area in which a plurality of electrically rewritable memory cells are formed; and a peripheral circuit area in which transistors that configure peripheral circuits to control the memory cells are formed. The memory cell area has formed therein: a semiconductor layer formed to extend in a vertical direction to a semiconductor substrate; a plurality of conductive layers extending in a parallel direction to, and laminated in a vertical direction to the semiconductor substrate; and a property-varying layer formed between the semiconductor layer and the conductive layers and having properties varying depending on a voltage applied to the conductive layers. The peripheral circuit area has formed therein a plurality of dummy wiring layers that are formed on the same plane as each of the plurality of conductive layers and that are electrically separated from the conductive layers.
摘要翻译：非易失性半导体存储装置包括：形成有多个电可重写存储单元的存储单元区域; 以及外围电路区域，其中形成配置外围电路以控制存储单元的晶体管。在其中形成存储单元区域：形成为在垂直方向上延伸到半导体衬底的半导体层; 多个导电层，沿着与半导体基板的垂直方向平行的方向延伸并层叠; 以及形成在所述半导体层和所述导电层之间的性质变化层，并且具有根据施加到所述导电层的电压而变化的特性。外围电路区域中形成有多个虚拟布线层，其形成在与多个导电层中的每一个相同的平面上，并且与导电层电分离。

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