专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08314455B2 Non-volatile semiconductor storage device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08314455B2
公开(公告)日：2012-11-20
申请号：US13156727
申请日：2011-06-09
申请人： Yasuhiro Shiino , Atsuhiro Sato , Takeshi Kamigaichi , Fumitaka Arai
发明人： Yasuhiro Shiino , Atsuhiro Sato , Takeshi Kamigaichi , Fumitaka Arai
IPC分类号： H01L29/792
CPC分类号： H01L27/11578 , H01L27/11573 , H01L27/11582
摘要： A non-volatile semiconductor storage device includes: a memory cell area in which a plurality of electrically rewritable memory cells are formed; and a peripheral circuit area in which transistors that configure peripheral circuits to control the memory cells are formed. The memory cell area has formed therein: a semiconductor layer formed to extend in a vertical direction to a semiconductor substrate; a plurality of conductive layers extending in a parallel direction to, and laminated in a vertical direction to the semiconductor substrate; and a property-varying layer formed between the semiconductor layer and the conductive layers and having properties varying depending on a voltage applied to the conductive layers. The peripheral circuit area has formed therein a plurality of dummy wiring layers that are formed on the same plane as each of the plurality of conductive layers and that are electrically separated from the conductive layers.
摘要翻译：非易失性半导体存储装置包括：形成有多个电可重写存储单元的存储单元区域; 以及外围电路区域，其中形成配置外围电路以控制存储单元的晶体管。在其中形成存储单元区域：形成为在垂直方向上延伸到半导体衬底的半导体层; 多个导电层，沿着与半导体基板的垂直方向平行的方向延伸并层叠; 以及形成在所述半导体层和所述导电层之间的性质变化层，并且具有根据施加到所述导电层的电压而变化的特性。外围电路区域中形成有多个虚拟布线层，其形成在与多个导电层中的每一个相同的平面上，并且与导电层电分离。

2. 发明授权

US08279679B2 Non-volatile semiconductor memory device, method of reading data therefrom, and semiconductor device 有权
标题翻译：非挥发性半导体存储器件，从其读取数据的方法以及半导体器件
公开(公告)号：US08279679B2
公开(公告)日：2012-10-02
申请号：US12979796
申请日：2010-12-28
申请人： Takeshi Kamigaichi , Kenji Sawamura
发明人： Takeshi Kamigaichi , Kenji Sawamura
IPC分类号： G11C16/06
CPC分类号： G11C16/3454 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C2211/5621
摘要： A control circuit is configured to perform, in a write operation to a memory cell and a verify operation for verifying a threshold voltage of the memory cell, a voltage control to provide the memory cell with threshold voltage distributions. The circuit is configured to apply, in a read operation from the memory cell, to a selected memory cell a read voltage between the lower and upper limits of the threshold voltage distributions, and apply to an unselected memory cell a first read-pass voltage higher than the upper limit of a first threshold voltage distribution that is the maximum distribution of the threshold voltage distributions. The circuit is configured to apply, at least during a verify operation in a first write operation conducted before a second write operation that completes writing to the first threshold voltage distribution, a second read-pass voltage lower than the first read-pass voltage to the unselected memory cell, and apply to the semiconductor layer and the source-line a positive voltage.
摘要翻译：控制电路被配置为在对存储器单元的写入操作和用于验证存储器单元的阈值电压的验证操作中执行电压控制，以向存储器单元提供阈值电压分布。该电路被配置为在从存储器单元的读取操作中将阈值电压分布的下限和上限之间的读取电压应用于所选择的存储器单元，并将其应用于未选择的存储器单元的第一读取通过电压超过作为阈值电压分布的最大分布的第一阈值电压分布的上限。该电路被配置为至少在第二写入操作期间在完成对第一阈值电压分布的写入的第二写入操作期间的验证操作期间施加低于第一读通过电压的第二读通过电压未选择的存储单元，并且应用于半导体层和源极线的正电压。

3. 发明申请

US20110316065A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20110316065A1
公开(公告)日：2011-12-29
申请号：US13226224
申请日：2011-09-06
申请人： Takeshi MURATA , Takeshi KAMIGAICHI
发明人： Takeshi MURATA , Takeshi KAMIGAICHI
IPC分类号： H01L29/78
CPC分类号： H01L27/11551 , H01L27/11524 , H01L27/11556 , H01L29/66825 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a first stack unit with a first selection transistor and a second selection transistor formed on a semiconductor substrate and a second stack unit with first insulating layers and first conductive layers stacked alternately on the upper surface of the first stack unit. The second stack unit includes a second insulating layer formed in contact with side walls of the first insulating layer and the first conductive layer, a charge storage layer formed in contact with the second insulating layer for storing electrical charges, a third insulating layer formed in contact with the charge storage layer, and a first semiconductor layer formed in contact with the third insulating layer so as to extend in a stacking direction, with one end connected to one diffusion layer of the first selection transistor and the other end connected to a diffusion layer of the second selection transistor.
摘要翻译：非易失性半导体存储器件包括具有第一选择晶体管的第一堆叠单元和形成在半导体衬底上的第二选择晶体管和具有第一绝缘层的第二堆叠单元和在第一堆叠单元的上表面上交替堆叠的第一导电层。第二堆叠单元包括与第一绝缘层和第一导电层的侧壁接触形成的第二绝缘层，与用于存储电荷的第二绝缘层接触形成的电荷存储层，形成为接触的第三绝缘层与电荷存储层形成的第一半导体层以及与第三绝缘层接触形成的层叠方向延伸的第一半导体层，一端与第一选择晶体管的一个扩散层连接，另一端与扩散层连接的第二选择晶体管。

4. 发明申请

US20110235413A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：非易失性半导体存储器件和控制非易失性半导体存储器件的方法
公开(公告)号：US20110235413A1
公开(公告)日：2011-09-29
申请号：US12886847
申请日：2010-09-21
申请人： Takeshi KAMIGAICHI
发明人： Takeshi KAMIGAICHI
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3418
摘要： A control circuit of a nonvolatile semiconductor memory device according to an embodiment of the present invention sets the lower limit of an intermediate distribution in a page writing operation such that an amount of shift from a first threshold voltage distribution to a second threshold voltage distribution is substantially equal to an amount of shift from the intermediate distribution to a fourth threshold voltage distribution, and raises the lower limit of the intermediate distribution as the number of times writing has been executed increases. When the threshold voltage distribution of a second memory cell adjoining a reading target first memory cell and subject to data write after the first memory cell is the second or fourth threshold voltage distribution, the control circuit executes control of applying a second reading pass voltage higher than the first reading pass voltage to the second memory cell.
摘要翻译：根据本发明的实施例的非易失性半导体存储器件的控制电路在页写入操作中设定中间分布的下限，使得从第一阈值电压分布到第二阈值电压分布的偏移量基本上等于从中间分布到第四阈值电压分布的偏移量，并且随着写入次数的增加，提高了中间分布的下限。当与第一存储单元相邻的第二存储单元与第一存储单元相邻并经受数据写入的阈值电压分布是第二或第四阈值电压分布时，控制电路执行施加高于第一读取通过电压到第二存储单元。

5. 发明授权

US08026546B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08026546B2
公开(公告)日：2011-09-27
申请号：US12434305
申请日：2009-05-01
申请人： Takeshi Murata , Takeshi Kamigaichi
发明人： Takeshi Murata , Takeshi Kamigaichi
IPC分类号： H01L29/792
CPC分类号： H01L27/11551 , H01L27/11524 , H01L27/11556 , H01L29/66825 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a first stack unit with a first selection transistor and a second selection transistor formed on a semiconductor substrate and a second stack unit with first insulating layers and first conductive layers stacked alternately on the upper surface of the first stack unit. The second stack unit includes a second insulating layer formed in contact with side walls of the first insulating layer and the first conductive layer, a charge storage layer formed in contact with the second insulating layer for storing electrical charges, a third insulating layer formed in contact with the charge storage layer, and a first semiconductor layer formed in contact with the third insulating layer so as to extend in a stacking direction, with one end connected to one diffusion layer of the first selection transistor and the other end connected to a diffusion layer of the second selection transistor.
摘要翻译：非易失性半导体存储器件包括具有第一选择晶体管的第一堆叠单元和形成在半导体衬底上的第二选择晶体管和具有第一绝缘层的第二堆叠单元和在第一堆叠单元的上表面上交替堆叠的第一导电层。第二堆叠单元包括与第一绝缘层和第一导电层的侧壁接触形成的第二绝缘层，与用于存储电荷的第二绝缘层接触形成的电荷存储层，形成为接触的第三绝缘层与电荷存储层形成的第一半导体层以及与第三绝缘层接触形成的层叠方向延伸的第一半导体层，一端与第一选择晶体管的一个扩散层连接，另一端与扩散层连接的第二选择晶体管。

6. 发明申请

US20110186921A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING ELEMENT ISOLATING REGION OF TRENCH TYPE 有权
标题翻译：具有元件分离区域的非挥发性半导体存储器件
公开(公告)号：US20110186921A1
公开(公告)日：2011-08-04
申请号：US13085884
申请日：2011-04-13
申请人： Michiharu MATSUI , Seiichi Mori , Riichiro Shirota , Yuji Takeuchi , Takeshi Kamigaichi
发明人： Michiharu MATSUI , Seiichi Mori , Riichiro Shirota , Yuji Takeuchi , Takeshi Kamigaichi
IPC分类号： H01L29/788
CPC分类号： H01L27/11526 , H01L21/76229 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11529 , H01L27/11531 , H01L27/11543 , H01L29/7887
摘要： Disclosure is semiconductor device of a selective gate region, comprising a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the first insulating layer, an element isolating region comprising an element isolating insulating film formed to extend through the first electrode layer and the first insulating film to reach an inner region of the semiconductor layer, the element isolating region isolating a element region and being self-aligned with the first electrode layer, a second insulating film formed on the first electrode layer and the element isolating region, an open portion exposing a surface of the first electrode layer being formed in the second insulating film, and a second electrode layer formed on the second insulating film and the exposed surface of the first electrode layer, the second electrode layer being electronically connected to the first electrode layer via the open portion.
摘要翻译：公开是选择性栅极区域的半导体器件，包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘层上的第一电极层，元件隔离区域，其包括形成为延伸穿过的元件隔离绝缘膜所述第一电极层和所述第一绝缘膜到达所述半导体层的内部区域，所述元件隔离区域隔离元件区域并且与所述第一电极层自对准;第二绝缘膜，形成在所述第一电极层上，元件隔离区域，暴露在第二绝缘膜中形成的第一电极层的表面的开口部分和形成在第二绝缘膜和第一电极层的暴露表面上的第二电极层，第二电极层是电子经由开口部与第一电极层连接。

7. 发明授权

US07939908B2 High-voltage transistor having shielding gate 有权
标题翻译：具有屏蔽门的高电压晶体管
公开(公告)号：US07939908B2
公开(公告)日：2011-05-10
申请号：US11510584
申请日：2006-08-28
申请人： Hiroyuki Kutsukake , Kikuko Sugimae , Takeshi Kamigaichi
发明人： Hiroyuki Kutsukake , Kikuko Sugimae , Takeshi Kamigaichi
IPC分类号： H01L21/76
CPC分类号： H01L27/11526 , G11C16/0408 , G11C16/08 , H01L23/528 , H01L27/0207 , H01L27/105 , H01L27/11286 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/0649 , H01L29/402 , H01L29/404
摘要： A semiconductor device includes a plurality of high-voltage insulated-gate field-effect transistors arranged in a matrix form on the main surface of a semiconductor substrate and each having a gate electrode, a gate electrode contact formed on the gate electrode, and a wiring layer which is formed on the gate electrode contacts adjacent in a gate-width direction to electrically connect the gate electrodes arranged in the gate-width direction. And the device includes shielding gates provided on portions of an element isolation region which lie between the transistors adjacent in the gate-width direction and gate-length direction and used to apply reference potential or potential of a polarity different from that of potential applied to the gate of the transistor to turn on the current path of the transistor to the element isolation region.
摘要翻译：半导体器件包括在半导体衬底的主表面上以矩阵形式布置的多个高电压绝缘栅场效应晶体管，每个具有栅电极，形成在栅电极上的栅电极接触和布线形成在栅极电极上的层在栅极宽度方向上相邻地接触以电连接沿栅极宽度方向布置的栅电极。并且该器件包括设置在位于栅极宽度方向和栅极长度方向相邻的晶体管之间的元件隔离区域的部分上的屏蔽栅极，用于施加与施加到栅极宽度方向上的电位的极性不同的参考电位或电位晶体管的栅极，以将晶体管的电流路径导通到元件隔离区域。

8. 发明申请

US20100065900A1 SEMICONDUCTOR DEVICE INCLUDING RESISTANCE ELEMENT 审中-公开
标题翻译：包括电阻元件的半导体器件
公开(公告)号：US20100065900A1
公开(公告)日：2010-03-18
申请号：US12560783
申请日：2009-09-16
申请人： Takeshi MURATA , Takeshi Kamigaichi , Itaru Kawabata , Shinya Takahashi
发明人： Takeshi MURATA , Takeshi Kamigaichi , Itaru Kawabata , Shinya Takahashi
IPC分类号： H01L29/8605 , H01L29/792 , H01L23/48
CPC分类号： H01L28/20 , H01L27/0629 , H01L27/11526 , H01L27/11529
摘要： A semiconductor device includes a resistance element. The resistance element includes a first and second conductive films, second insulating film, and contact plugs. The first conductive film is formed on a semiconductor substrate with a first insulating film interposed therebetween. The second insulating film is formed on the first conductive film. The second conductive film is formed on the second insulating film. In the first connection portion, the second insulating film is removed. The first connection portion connects the first conductive film and the second conductive film together. The contact plugs are formed on the second conductive film. The contact plugs are arranged such that a region located on the second conductive film and immediately above the connection portion is sandwiched between the contact plugs.
摘要翻译：半导体器件包括电阻元件。电阻元件包括第一和第二导电膜，第二绝缘膜和接触插塞。第一导电膜形成在半导体衬底上，其间插入有第一绝缘膜。第二绝缘膜形成在第一导电膜上。第二导电膜形成在第二绝缘膜上。在第一连接部分中，去除第二绝缘膜。第一连接部分将第一导电膜和第二导电膜连接在一起。接触插塞形成在第二导电膜上。接触插塞被布置成使得位于第二导电膜上并紧邻连接部分的区域夹在接触插塞之间。

9. 发明授权

US07671475B2 Nonvolatile semiconductor memory having a word line bent towards a select gate line side 有权
标题翻译：具有向选择栅线侧弯曲的字线的非易失性半导体存储器
公开(公告)号：US07671475B2
公开(公告)日：2010-03-02
申请号：US11764416
申请日：2007-06-18
申请人： Takeshi Kamigaichi , Takeshi Murata , Itaru Kawabata
发明人： Takeshi Kamigaichi , Takeshi Murata , Itaru Kawabata
IPC分类号： H01L29/41 , H01L27/115
CPC分类号： H01L27/11519 , G11C5/06 , G11C5/063 , G11C16/04 , G11C16/0483 , H01L27/115 , H01L27/11524
摘要： A nonvolatile semiconductor memory includes a cell unit having a select gate transistor and a memory cell connected in series, a select gate line connected to the select gate transistor, and a word line connected to the memory cell. One end of the word line is bent to the select gate line side, and a fringe is connected between a bent point and a distal end of the word line.
摘要翻译：非易失性半导体存储器包括具有选择栅极晶体管和串联连接的存储单元的单元单元，连接到选择栅极晶体管的选择栅极线和连接到存储单元的字线。字线的一端弯曲到选择栅线侧，并且边缘连接在字线的弯曲点和远端之间。

10. 发明申请

US20090221128A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING ELEMENT ISOLATING REGION OF TRENCH TYPE 有权
标题翻译：具有元件分离区域的非挥发性半导体存储器件
公开(公告)号：US20090221128A1
公开(公告)日：2009-09-03
申请号：US12435842
申请日：2009-05-05
申请人： Michiharu MATSUI , Seiichi MORI , Riichiro SHIROTA , Yuji TAKEUCHI , Takeshi KAMIGAICHI
发明人： Michiharu MATSUI , Seiichi MORI , Riichiro SHIROTA , Yuji TAKEUCHI , Takeshi KAMIGAICHI
IPC分类号： H01L21/28 , H01L21/762
CPC分类号： H01L27/11526 , H01L21/76229 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L27/11529 , H01L27/11531 , H01L27/11543 , H01L29/7887
摘要： Disclosure is semiconductor device of a selective gate region, comprising a semiconductor layer, a first insulating film formed on the semiconductor layer, a first electrode layer formed on the first insulating layer, an element isolating region comprising an element isolating insulating film formed to extend through the first electrode layer and the first insulating film to reach an inner region of the semiconductor layer, the element isolating region isolating a element region and being self-aligned with the first electrode layer, a second insulating film formed on the first electrode layer and the element isolating region, an open portion exposing a surface of the first electrode layer being formed in the second insulating film, and a second electrode layer formed on the second insulating film and the exposed surface of the first electrode layer, the second electrode layer being electronically connected to the first electrode layer via the open portion.
摘要翻译：公开是选择性栅极区域的半导体器件，包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘层上的第一电极层，元件隔离区域，其包括形成为延伸穿过的元件隔离绝缘膜所述第一电极层和所述第一绝缘膜到达所述半导体层的内部区域，所述元件隔离区域隔离元件区域并且与所述第一电极层自对准;第二绝缘膜，形成在所述第一电极层上，元件隔离区域，暴露在第二绝缘膜中形成的第一电极层的表面的开口部分和形成在第二绝缘膜和第一电极层的暴露表面上的第二电极层，第二电极层是电子经由开口部与第一电极层连接。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式