专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08772785B2 Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device 有权
标题翻译：半导体器件，肖特基势垒二极管，电子器件，以及半导体器件的制造方法
公开(公告)号：US08772785B2
公开(公告)日：2014-07-08
申请号：US13141448
申请日：2009-11-26
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
IPC分类号： H01L29/15
CPC分类号： H01L29/872 , H01L29/08 , H01L29/2003 , H01L29/475
摘要： A semiconductor device includes semiconductor layers, an anode electrode, and a cathode electrode. The semiconductor layers include a composition change layer, the anode electrode is electrically connected to one of principal surfaces of the composition change layer through a formation of a Schottky junction between the anode electrode and a part of the semiconductor layers, the cathode electrode is electrically connected to the other of the principal surfaces of the composition change layer through a formation of a junction between the cathode electrode and another part of the semiconductor layers, the anode electrode and the cathode electrode are capable of applying a voltage to the composition change layer in a direction perpendicular to the principal surface.
摘要翻译：半导体器件包括半导体层，阳极电极和阴极电极。半导体层包括组成变化层，阳极电极通过在阳极电极和一部分半导体层之间形成肖特基结而与组合物变化层的主表面电连接，阴极电连接通过在阴极电极和另一部分半导体层之间形成接合而形成组合物变化层的另一个主表面，阳极电极和阴极电极能够向组合物变化层施加电压方向垂直于主表面。

2. 发明申请

US20110297954A1 SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，肖特基二极管二极管，电子设备和生产半导体器件的方法
公开(公告)号：US20110297954A1
公开(公告)日：2011-12-08
申请号：US13141448
申请日：2009-11-26
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
IPC分类号： H01L29/20 , H01L21/329
CPC分类号： H01L29/872 , H01L29/08 , H01L29/2003 , H01L29/475
摘要： [Problem to be Solved] Provided is a semiconductor device in which the trade-off between the pressure resistance and the on-state resistance is improved and the performance is improved.[Solution] The semiconductor device 1 of the present invention comprises semiconductor layers 20 to 23, an anode electrode 12, and a cathode electrode 13, wherein the semiconductor layers include a composition change layer 23, the anode electrode 12 is electrically connected to one of principal surfaces of the composition change layer through a formation of a Schottky junction between the anode electrode 12 and a part of the semiconductor layers, the cathode electrode 13 is electrically connected to the other of the principal surfaces of the composition change layer through a formation of a junction between the cathode electrode 13 and another part of the semiconductor layers, the anode electrode 12 and the cathode electrode 13 are capable of applying a voltage to the composition change layer 23 in a direction perpendicular to the principal surface, andthe composition change layer 23 has composition that changes from a cathode electrode 13 side toward an anode electrode 12 side in the direction perpendicular to the principal surface of the composition change layer, has a negative polarization charge that is generated due to the composition that changes, and contains a donor impurity.
摘要翻译： [待解决的问题]提供了一种半导体器件，其中改善了耐压性和通态电阻之间的折衷，并提高了性能。 [解决方案]本发明的半导体器件1包括半导体层20至23，阳极电极12和阴极电极13，其中半导体层包括组成变化层23，阳极电极12电连接到通过在阳极12和半导体层的一部分之间形成肖特基结，组成变化层的主表面通过形成阴极电极13而与组合物改变层的另一个主表面电连接阴极电极13和半导体层的另一部分之间的接合点，阳极电极12和阴极电极13能够在垂直于主表面的方向上向组合物变化层23施加电压，并且组成变化层 23具有从阴极电极13侧向阳极电极12侧变化的组成具有垂直于组成变化层的主表面的方向具有由于组成变化而产生并且包含施主杂质的负极化电荷。

3. 发明授权

US08981434B2 Semiconductor device and field effect transistor 有权
标题翻译：半导体器件和场效应晶体管
公开(公告)号：US08981434B2
公开(公告)日：2015-03-17
申请号：US13393002
申请日：2010-06-23
申请人： Hironobu Miyamoto , Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
发明人： Hironobu Miyamoto , Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
IPC分类号： H01L29/76 , H01L29/812 , H01L29/201 , H01L29/78 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/417 , H01L29/423
CPC分类号： H01L29/8122 , H01L29/0657 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/7809 , H01L29/7812 , H01L29/7813 , H01L29/8128
摘要： Provided is a semiconductor device in which the trade-off between the withstand voltage and the on-resistance is improved and the performance is increased. A semiconductor device comprises a substrate 1, a first n-type semiconductor layer 21′, a second n-type semiconductor layer 23, a p-type semiconductor layer 24, and a third n-type semiconductor layer 25′, wherein the first n-type semiconductor layer 21′, the second n-type semiconductor layer 23, the p-type semiconductor layer 24, and the third n-type semiconductor layer 25′ are laminated at the upper side of the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 21′ and the source electrode 12 is in ohmic-contact with the third n-type semiconductor layer 25′. A gate electrode 14 is arranged so as to fill an opening portion to be filled that extends from the third n-type semiconductor layer 25′ to the second n-type semiconductor layer 23, and the gate electrode 14 is in contact with the upper surface of the second n-type semiconductor layer 23, the side surfaces of the p-type semiconductor layer 24, and the side surfaces of the third n-type semiconductor layer 25′. The second n-type semiconductor layer 23 has composition that changes from the drain electrode 13 side toward the source electrode 12 side in the direction perpendicular to the plane of the substrate 1 and contains donor impurity.
摘要翻译：提供一种半导体器件，其中耐压和导通电阻之间的折衷被提高并且性能提高。半导体器件包括衬底1，第一n型半导体层21'，第二n型半导体层23，p型半导体层24和第三n型半导体层25'，其中第一n型半导体层型半导体层21'，第二n型半导体层23，p型半导体层24和第三n型半导体层25'依次层叠在基板1的上侧。漏电极13与第一n型半导体层21'欧姆接触，源电极12与第三n型半导体层25'欧姆接触。栅电极14被布置成填充从第三n型半导体层25'延伸到第二n型半导体层23的待填充的开口部分，并且栅电极14与上表面第二n型半导体层23，p型半导体层24的侧表面和第三n型半导体层25'的侧表面。第二n型半导体层23具有从垂直于基板1的平面的方向从漏电极13侧向源电极12侧变化的成分，并且含有施主杂质。

4. 发明申请

US20120199889A1 SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR 有权
标题翻译：半导体器件和场效应晶体管
公开(公告)号：US20120199889A1
公开(公告)日：2012-08-09
申请号：US13393002
申请日：2010-06-23
申请人： Hironobu Miyamoto , Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
发明人： Hironobu Miyamoto , Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
IPC分类号： H01L29/78
CPC分类号： H01L29/8122 , H01L29/0657 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/7809 , H01L29/7812 , H01L29/7813 , H01L29/8128
摘要： Provided is a semiconductor device in which the trade-off between the withstand voltage and the on-resistance is improved and the performance is increased.A semiconductor device comprises a substrate 1, a first n-type semiconductor layer 21′, a second n-type semiconductor layer 23, a p-type semiconductor layer 24, and a third n-type semiconductor layer 25′, wherein the first n-type semiconductor layer 21′, the second n-type semiconductor layer 23, the p-type semiconductor layer 24, and the third n-type semiconductor layer 25′ are laminated at the upper side of the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 21′ and the source electrode 12 is in ohmic-contact with the third n-type semiconductor layer 25′. A gate electrode 14 is arranged so as to fill an opening portion to be filled that extends from the third n-type semiconductor layer 25′ to the second n-type semiconductor layer 23, and the gate electrode 14 is in contact with the upper surface of the second n-type semiconductor layer 23, the side surfaces of the p-type semiconductor layer 24, and the side surfaces of the third n-type semiconductor layer 25′. The second n-type semiconductor layer 23 has composition that changes from the drain electrode 13 side toward the source electrode 12 side in the direction perpendicular to the plane of the substrate 1 and contains donor impurity.
摘要翻译：提供一种半导体器件，其中耐压和导通电阻之间的折衷被提高并且性能提高。半导体器件包括衬底1，第一n型半导体层21'，第二n型半导体层23，p型半导体层24和第三n型半导体层25'，其中第一n型半导体层型半导体层21'，第二n型半导体层23，p型半导体层24和第三n型半导体层25'依次层叠在基板1的上侧。漏电极13与第一n型半导体层21'欧姆接触，源电极12与第三n型半导体层25'欧姆接触。栅电极14被布置成填充从第三n型半导体层25'延伸到第二n型半导体层23的待填充的开口部分，并且栅电极14与上表面第二n型半导体层23，p型半导体层24的侧表面和第三n型半导体层25'的侧表面。第二n型半导体层23具有从垂直于基板1的平面的方向从漏电极13侧向源电极12侧变化的成分，并且含有施主杂质。

5. 发明授权

US08552471B2 Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same 失效
标题翻译：具有反向阻挡特性的半导体装置及其制造方法
公开(公告)号：US08552471B2
公开(公告)日：2013-10-08
申请号：US13139789
申请日：2009-12-11
申请人： Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Kazuki Ota , Takashi Inoue , Hironobu Miyamoto , Kazuomi Endo
发明人： Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Kazuki Ota , Takashi Inoue , Hironobu Miyamoto , Kazuomi Endo
IPC分类号： H01L29/66
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/2003 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/7787
摘要： There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer including a channel layer, a source electrode formed on the first semiconductor layer, a drain electrode formed at a distance from the source electrode on the first semiconductor layer, and a gate electrode formed between the source electrode and the drain electrode on the first semiconductor layer. The drain electrode includes a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region.
摘要翻译：提供了能够实现反向阻挡特性和低导通电阻的半导体装置。半导体装置包括：第一半导体层，包括沟道层，形成在第一半导体层上的源电极，在第一半导体层上与源极间隔一定距离处形成的漏电极，以及形成在源电极和第一半导体层上的漏电极。漏电极包括第一漏极区，其中第一半导体层和第一漏极区之间的反向电流被阻挡，以及形成在比栅极电极比第一漏极区更远的距离处的第二漏区，半导体层和第二漏极区域比第一半导体层和第一漏极区域之间的电阻低。

6. 发明申请

US20110260217A1 SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110260217A1
公开(公告)日：2011-10-27
申请号：US13139789
申请日：2009-12-11
申请人： Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Kazuki Ota , Takashi Inoue , Hironobu Miyamoto , Kazuomi Endo
发明人： Yasuhiro Okamoto , Yuji Ando , Tatsuo Nakayama , Kazuki Ota , Takashi Inoue , Hironobu Miyamoto , Kazuomi Endo
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/2003 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/7787
摘要： There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer including a channel layer, a source electrode formed on the first semiconductor layer, a drain electrode formed at a distance from the source electrode on the first semiconductor layer, and a gate electrode formed between the source electrode and the drain electrode on the first semiconductor layer. The drain electrode includes a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region.
摘要翻译：提供了能够实现反向阻挡特性和低导通电阻的半导体装置。半导体装置包括：第一半导体层，包括沟道层，形成在第一半导体层上的源电极，在第一半导体层上与源极间隔一定距离处形成的漏电极，以及形成在源电极和第一半导体层上的漏电极。漏电极包括第一漏极区，其中第一半导体层和第一漏极区之间的反向电流被阻挡，以及形成在比栅极电极比第一漏极区更远的距离处的第二漏区，半导体层和第二漏极区域比第一半导体层和第一漏极区域之间的电阻低。

7. 发明授权

US08921894B2 Field effect transistor, method for producing the same, and electronic device 有权
标题翻译：场效应晶体管，其制造方法和电子器件
公开(公告)号：US08921894B2
公开(公告)日：2014-12-30
申请号：US13637555
申请日：2010-12-15
申请人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
发明人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
IPC分类号： H01L29/778 , H01L21/8252 , H01L29/78 , H01L29/20 , H01L29/423 , H01L29/66
CPC分类号： H01L29/78 , H01L21/8252 , H01L29/2003 , H01L29/4232 , H01L29/66477 , H01L29/7785 , H01L29/7787
摘要： The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer 112, a channel layer 113, a barrier layer 114, and a spacer layer 115 is formed of a group-III nitride semiconductor, and each of the upper surfaces thereof is a group-III atomic plane that is perpendicular to a (0001) crystal axis. The lattice-relaxed buffer layer 112, the channel layer 113 having a compressive strain, and the barrier layer 114 having a tensile strain, and the spacer layer 115 having a compressive strain are laminated on a substrate 100 in this order. The gate insulating film 14 is arranged on the spacer layer 115. The gate electrode 15 is arranged on the gate insulating film 14. The source electrode 161 and the drain electrode 162 are electrically connected to the channel layer 113 directly or via another component.
摘要翻译：本发明提供了能够实现高阈值电压和低通态电阻两者的场效应晶体管，其制造方法和电子器件。在场效应晶体管中，由III族氮化物半导体形成缓冲层112，沟道层113，势垒层114和间隔层115，其上表面为III族原子平面垂直于（0001）晶轴。栅格弛豫缓冲层112，具有压缩应变的沟道层113和具有拉伸应变的阻挡层114以及具有压缩应变的间隔层115以此顺序层压在基板100上。栅极绝缘膜14布置在间隔层115上。栅电极15布置在栅极绝缘膜14上。源极161和漏极162直接或经由另一个部件电连接到沟道层113。

8. 发明申请

US20130099245A1 FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE 审中-公开
标题翻译：场效应晶体管，其制造方法和电子器件
公开(公告)号：US20130099245A1
公开(公告)日：2013-04-25
申请号：US13637316
申请日：2010-12-15
申请人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
发明人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
IPC分类号： H01L29/205 , H01L29/66 , H01L29/78
CPC分类号： H01L29/205 , H01L29/2003 , H01L29/4232 , H01L29/66431 , H01L29/7785 , H01L29/7787 , H01L29/78
摘要： The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer 112, a channel layer 113, a barrier layer 114, and a spacer layer 115 is formed of a group-III nitride semiconductor, and each of the upper surfaces thereof is a group-III atomic plane that is perpendicular to a (0001) crystal axis. The lattice-relaxed buffer layer 112, the lattice-relaxed channel layer 113, and the barrier layer 114 having a tensile strain, and the spacer layer 115 are laminated on a substrate 100 in this order. The gate insulating film 14 is arranged on the spacer layer 115. The gate electrode 15 is arranged on the gate insulating film 14. The source electrode 161 and the drain electrode 162 are electrically connected to the channel layer 113 directly or via another component.
摘要翻译：本发明提供了能够实现高阈值电压和低通态电阻两者的场效应晶体管，其制造方法和电子器件。在场效应晶体管中，由III族氮化物半导体形成缓冲层112，沟道层113，势垒层114和间隔层115，其上表面为III族原子平面垂直于（0001）晶轴。晶格弛豫缓冲层112，晶格松弛沟道层113和具有拉伸应变的势垒层114和间隔层115依次层压在基板100上。栅极绝缘膜14布置在间隔层115上。栅电极15布置在栅极绝缘膜14上。源极161和漏极162直接或经由另一个部件电连接到沟道层113。

9. 发明申请

US20130105811A1 FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE 有权
标题翻译：场效应晶体管，其制造方法和电子器件
公开(公告)号：US20130105811A1
公开(公告)日：2013-05-02
申请号：US13637555
申请日：2010-12-15
申请人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
发明人： Yuji Ando , Takashi Inoue , Kazuki Ota , Yasuhiro Okamoto , Tatsuo Nakayama , Kazuomi Endo
IPC分类号： H01L29/78 , H01L29/66 , H01L29/20
CPC分类号： H01L29/78 , H01L21/8252 , H01L29/2003 , H01L29/4232 , H01L29/66477 , H01L29/7785 , H01L29/7787
摘要： The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer 112, a channel layer 113, a barrier layer 114, and a spacer layer 115 is formed of a group-III nitride semiconductor, and each of the upper surfaces thereof is a group-III atomic plane that is perpendicular to a (0001) crystal axis. The lattice-relaxed buffer layer 112, the channel layer 113 having a compressive strain, and the barrier layer 114 having a tensile strain, and the spacer layer 115 having a compressive strain are laminated on a substrate 100 in this order. The gate insulating film 14 is arranged on the spacer layer 115. The gate electrode 15 is arranged on the gate insulating film 14. The source electrode 161 and the drain electrode 162 are electrically connected to the channel layer 113 directly or via another component.
摘要翻译：本发明提供了能够实现高阈值电压和低通态电阻两者的场效应晶体管，其制造方法和电子器件。在场效应晶体管中，由III族氮化物半导体形成缓冲层112，沟道层113，势垒层114和间隔层115，其上表面分别为III族原子平面垂直于（0001）晶轴。栅格弛豫缓冲层112，具有压缩应变的沟道层113和具有拉伸应变的阻挡层114以及具有压缩应变的间隔层115以此顺序层压在基板100上。栅极绝缘膜14布置在间隔层115上。栅电极15布置在栅极绝缘膜14上。源极161和漏极162直接或经由另一个部件电连接到沟道层113。

10. 发明授权

US09240858B2 Optical communication system, optical communication method, optical communication device, and method and program for controlling the same 有权
标题翻译：光通信系统，光通信方式，光通信装置及其控制方法和程序
公开(公告)号：US09240858B2
公开(公告)日：2016-01-19
申请号：US13988444
申请日：2011-11-22
申请人： Kazuomi Endo , Yoichi Hashimoto
发明人： Kazuomi Endo , Yoichi Hashimoto
IPC分类号： H04B10/00 , H04J14/06 , H04B10/556 , H04B10/61
CPC分类号： H04J14/06 , H04B10/5561 , H04B10/6166
摘要： In order to perform the polarization demultiplexing of the polarization multiplexed BPSK signal using a small-scale circuit by means of optical phase modulation of the polarization multiplexed BPSK signal into the pseudo polarization multiplexed QPSK signal, an optical communication system for communicating by using polarization multiplexed optical signals includes an optical phase modulation means for modulating phases of a plurality of optical signals employing BPSK modulation system including information to be communicated, and for generating a plurality of optical signals to become signals by pseudo QPSK modulation system; and a signal restoration means for performing polarization demultiplexing of a plurality of polarization multiplexed optical signals from a plurality of optical signals modulated into the pseudo QPSK modulation system, and for restoring the information to be communicated.
摘要翻译：为了通过偏振多路复用的BPSK信号的光相位调制使用小尺度电路将偏振复用的BPSK信号的偏振解复用进入伪偏振复用的QPSK信号，通过使用偏振复用光信号进行通信的光通信系统信号包括光相位调制装置，用于使用包括要传送的信息的BPSK调制系统来调制多个光信号的相位，并且用于通过伪QPSK调制系统产生多个光信号成为信号; 以及信号恢复装置，用于从被调制到伪QPSK调制系统的多个光信号中进行多个偏振复用光信号的偏振解复用，并用于恢复要传送的信息。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式