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1. 发明授权

US09040955B2 Semiconductor device, optical sensor device and semiconductor device manufacturing method 有权
标题翻译：半导体装置，光传感器装置及半导体装置的制造方法
公开(公告)号：US09040955B2
公开(公告)日：2015-05-26
申请号：US13505226
申请日：2011-05-19
申请人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
发明人： Kei Fujii , Katsushi Akita , Takashi Ishizuka , Hideaki Nakahata , Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , H01L31/105 , B82Y20/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/105 , H01L31/1844
摘要： Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device 50 includes an absorption layer 3 of a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate 1, and an InP contact layer 5 located on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z≧−0.4x+24.6 is satisfied.
摘要翻译：提供了一种半导体器件和光学传感器装置，每个具有减小的暗电流，并且在近红外线中向较长波长延伸的检测能力。此外，提供了一种用于制造半导体器件的方法。半导体器件50包括位于InP衬底1上的II型（GaAsSb / InGaAs）MQW结构的吸收层3和位于MQW结构上的InP接触层5。在MQW结构中，GaAsSb的组成x（％）不小于44％，其厚度z（nm）不小于3nm，并且z≥-0.4x + 24.6。

2. 发明授权

US08564666B2 Image pickup device, visibility support apparatus, night vision device, navigation support apparatus, and monitoring device 有权
标题翻译：图像拾取装置，可见度支持装置，夜视装置，导航支援装置和监视装置
公开(公告)号：US08564666B2
公开(公告)日：2013-10-22
申请号：US13548668
申请日：2012-07-13
申请人： Youichi Nagai , Yasuhiro Iguchi
发明人： Youichi Nagai , Yasuhiro Iguchi
IPC分类号： H04N7/18
CPC分类号： B82Y20/00 , H01L27/14649 , H01L27/14694 , H01L31/035236
摘要： An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the light-receiving layer.
摘要翻译：提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散形成每个受光元件的pn结，并且杂质选择性地扩散到光接收层的浓度为5×1016 / cm3以下。扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。在扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到光接收层的5×1016 / cm3以下。

3. 发明申请

US20120223290A1 LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY 有权
标题翻译：光接收元件，光接收元件阵列，制造光接收元件的方法和制造光接收元件阵列的方法
公开(公告)号：US20120223290A1
公开(公告)日：2012-09-06
申请号：US13451031
申请日：2012-04-19
申请人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
发明人： Yasuhiro Iguchi , Kohei Miura , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035236 , B82Y20/00 , H01L21/02392 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L21/02631 , H01L27/14683 , H01L31/03046 , H01L31/102 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A light-receiving element includes a group III-V compound semiconductor stacked structure that includes an absorption layer having a pn-junction therein. The stacked structure is formed on a group III-V compound semiconductor substrate. The absorption layer has a multi- quantum well structure composed of group III-V compound semiconductors, and the pn-junction is formed by selectively diffusing an impurity element into the absorption layer. A diffusion concentration distribution control layer composed of a III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate. The bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V compound semiconductor substrate. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is 5×1016/cm3 or less toward the absorption layer.
摘要翻译：光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层。叠层结构形成在III-V族化合物半导体衬底上。吸收层具有由III-V族化合物半导体组成的多量子阱结构，并且通过选择性地将杂质元素扩散到吸收层中而形成pn结。由III-V族半导体构成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体衬底相邻的一侧相反侧的吸收层接触。扩散浓度分布控制层的带隙能量小于III-V族化合物半导体衬底的带隙能量。在扩散浓度分布控制层中选择性扩散的杂质元素的浓度朝向吸收层为5×1016 / cm3以下。

4. 发明申请

US20100327386A1 PHOTODIODE ARRAY, IMAGE PICKUP DEVICE, AND MANUFACTURING METHOD 有权
标题翻译：光电子阵列，图像拾取器件和制造方法
公开(公告)号：US20100327386A1
公开(公告)日：2010-12-30
申请号：US12494393
申请日：2009-06-30
申请人： Youichi Nagai , Yasuhiro Iguchi
发明人： Youichi Nagai , Yasuhiro Iguchi
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/18
CPC分类号： H01L27/14689 , H01L27/1446 , H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit.
摘要翻译：光电二极管阵列包括公共读出控制电路的基板; 以及排列在基板上并且各自包括吸收层的多个光电二极管，以及一对第一导电侧电极和第二导电侧电极。在该光电二极管阵列中，每个光电二极管与相邻的光电二极管隔离，第一导电侧电极设置在第一导电型区域上，并且在所有光电二极管上共同电连接，第二导电侧电极设置在第二导电型电极上导电型区域，并且分别电连接到读出控制电路的读出电极。

5. 发明申请

US20100051905A1 MOISTURE DETECTOR, BIOLOGICAL BODY MOISTURE DETECTOR, NATURAL PRODUCT MOISTURE DETECTOR, AND PRODUCT/MATERIAL MOISTURE DETECTOR 有权
标题翻译：水分检测器，生物体水分检测器，天然产品水分检测器和产品/材料水分检测器
公开(公告)号：US20100051905A1
公开(公告)日：2010-03-04
申请号：US12508008
申请日：2009-07-23
申请人： Yasuhiro Iguchi , Youichi Nagai
发明人： Yasuhiro Iguchi , Youichi Nagai
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03042 , H01L31/03046 , Y02E10/544
摘要： A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×1016/cm3 or less. The moisture detector receives light having at least one wavelength included in an absorption band of water lying in a wavelength range of 3 μm or less, thereby detecting moisture.
摘要翻译：水分检测器包括具有pn结的吸收层或受光元件的阵列的光接收元件，其中吸收层具有由III-V族半导体组成的多量子阱结构，pn- 通过选择性地将杂质元素扩散到吸收层中而形成结，并且吸收层中的杂质浓度为5×1016 / cm3以下。水分检测器接收具有在3μm以下的波长范围内的水的吸收带中包含的至少一个波长的光，从而检测水分。

6. 发明申请

US20070264835A1 Photodiode Array, Method For Manufacturing The Same, And The Optical Measurement System Thereof 审中-公开
标题翻译：光电二极管阵列，制造方法及其光学测量系统
公开(公告)号：US20070264835A1
公开(公告)日：2007-11-15
申请号：US11741226
申请日：2007-04-27
申请人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
发明人： Yasuhiro Iguchi , Hiroshi Inada , Youichi Nagai
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L27/1446 , H01L31/1035 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A photodiode array for near infrared rays that includes photodiodes having a uniform size and a uniform shape, has high selectivity for the wavelength of received light between the photodiodes, and has high sensitivity with the aid of a high-quality semiconducting crystal containing a large amount of nitrogen, a method for manufacturing the photodiode array, and an optical measurement system are provided. The steps of forming a mask layer 2 having a plurality of openings on a first-conductive-type or semi-insulating semiconductor substrate 1, the openings being arranged in one dimension or two dimensions, and selectively growing a plurality of semiconductor layers 3a, 3b, and 3c including an absorption layer 3b in the openings are included.
摘要翻译：包括具有均匀尺寸和均匀形状的光电二极管的近红外线光电二极管阵列对于光电二极管之间的接收光的波长具有高选择性，并且借助于含有大量的高质量半导体晶体具有高灵敏度的氮，制造光电二极管阵列的方法和光学测量系统。在第一导电型或半绝缘半导体衬底1上形成具有多个开口的掩模层2的步骤，所述开口一维或二维地布置，并且选择性地生长多个半导体层3a，包括在开口中包括吸收层3b的3b和3c。

7. 发明授权

US08546758B2 Food quality examination device, food component examination device, foreign matter component examination device, taste examination device, and changed state examination device 有权
标题翻译：食品质量检测装置，食品成分检查装置，异物成分检查装置，味觉检查装置和状态检查装置
公开(公告)号：US08546758B2
公开(公告)日：2013-10-01
申请号：US13119619
申请日：2009-07-24
申请人： Youichi Nagai , Yasuhiro Iguchi
发明人： Youichi Nagai , Yasuhiro Iguchi
IPC分类号： G01J5/20 , H01L29/861
CPC分类号： G01N21/3563 , G01J3/02 , G01J3/0218 , G01J3/2803 , G01N21/359 , G01N33/025 , G01N2201/08 , G01N2201/129 , H01L27/14678 , H01L31/03046 , H01L31/0352 , H01L31/109 , Y02E10/544
摘要： A food quality examination device using a high-sensitivity light-receiving element. The light-receiving element includes a III-V compound semiconductor stacked structure including an absorption layer having a pn-junction therein, wherein the absorption layer has a multiquanturn well structure composed of group III-V compound semiconductors, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, a diffusion concentration distribution control layer composed of III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the group III-V compound semiconductor substrate,the bandgap energy of the diffusion concentration distribution control layer is smaller than that of the group III-V semiconductor substrate,the concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the absorption layer.
摘要翻译：使用高灵敏度光接收元件的食品质量检查装置。光接收元件包括III-V族化合物半导体层叠结构，其包括其中具有pn结的吸收层，其中吸收层具有由III-V族化合物半导体构成的多量子阱结构，pn结由选择性地将杂质元素扩散到吸收层中，将由III-V族半导体组成的扩散浓度分布控制层设置成与吸收层的与III-V族化合物半导体相邻侧相反侧的吸收层接触扩散浓度分布控制层的带隙能量比III-V族半导体衬底的能隙小，则扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到5×1016 / cm3，较少吸收层。

8. 发明授权

US08373156B2 Biological component detection device 有权
标题翻译：生物成分检测装置
公开(公告)号：US08373156B2
公开(公告)日：2013-02-12
申请号：US13122926
申请日：2009-07-30
申请人： Youichi Nagai , Yasuhiro Iguchi
发明人： Youichi Nagai , Yasuhiro Iguchi
IPC分类号： H01L29/06 , H01L31/0232 , H01L31/102
CPC分类号： A61B5/1455 , A61B5/14532 , G01J3/0218 , G01J2003/2866 , G01N21/359 , G01N21/474 , H01L27/1446 , H01L31/035209 , H01L31/1035
摘要： Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer 3 has a multiple quantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusing an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration. The biological component detection device is characterized in that an examination is conducted by receiving light having at least one wavelength of 3 μm or less, the wavelength being included in an absorption band of the biological component.
摘要翻译：本发明提供一种生物成分检测装置，其通过使用其中暗电流减小而不使用冷却机构的InP基光电二极管，以高灵敏度检测生物成分，并且灵敏度延伸至1.8μm以上的波长。吸收层3具有由III-V族半导体构成的多量子阱结构，通过选择性地扩散吸收层中的杂质元素形成pn结15，并且吸收层中杂质元素的浓度为5× 1016 / cm3以下，扩散浓度分布控制层在扩散前的n型杂质浓度为2×1015 / cm3以下，扩散浓度分布控制层具有与吸收层相邻的部分，该部分具有杂质浓度低。生物成分检测装置的特征在于，通过接收具有3μm以下的波长的波长的波长包含在生物成分的吸收带中进行检查。

9. 发明申请

US20120274771A1 IMAGE PICKUP DEVICE, VISIBILITY SUPPORT APPARATUS, NIGHT VISION DEVICE, NAVIGATION SUPPORT APPARATUS, AND MONITORING DEVICE 有权
标题翻译：图像拾取设备，可视性支持设备，夜视设备，导航支持设备和监控设备
公开(公告)号：US20120274771A1
公开(公告)日：2012-11-01
申请号：US13548668
申请日：2012-07-13
申请人： Youichi Nagai , Yasuhiro Iguchi
发明人： Youichi Nagai , Yasuhiro Iguchi
IPC分类号： H01L31/0352 , H04N7/18 , B82Y15/00
CPC分类号： B82Y20/00 , H01L27/14649 , H01L27/14694 , H01L31/035236
摘要： An image pickup device, a visibility support apparatus, a night vision device, a navigation support apparatus, and a monitoring device are provided in which noise and dark current are suppressed to thereby provide clear images regardless of whether it is day or night. The device includes a light-receiving layer 3 having a multi-quantum well structure and a diffusion concentration distribution control layer 4 disposed on the light-receiving layer so as to be opposite an InP substrate 1, wherein the light-receiving layer has a band gap wavelength of 1.65 to 3 μm, the diffusion concentration distribution control layer has a lower band gap energy than InP, a pn junction is formed for each light-receiving element by selective diffusion of an impurity element, and the impurity selectively diffused in the light-receiving layer has a concentration of 5×1016/cm3 or less. A diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the light-receiving layer, the portion having a low impurity concentration. The concentration of the impurity element selectively diffused in the diffusion concentration distribution control layer is decreased to be 5×1016/cm3 or less toward the light-receiving layer.
摘要翻译：提供了一种图像拾取装置，可视性支持装置，夜视装置，导航支持装置和监视装置，其中抑制噪声和暗电流，从而提供清晰的图像，而不管它是白天还是夜晚。该装置包括具有多量子阱结构的光接收层3和设置在光接收层上以与InP衬底1相对的扩散浓度分布控制层4，其中光接收层具有带间隙波长为1.65〜3μm，扩散浓度分布控制层具有比InP低的带隙能量，通过杂质元素的选择性扩散形成每个受光元件的pn结，并且杂质选择性地扩散在光接收层的浓度为5×1016 / cm3以下。扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与光接收层相邻的部分，该杂质浓度低的部分。在扩散浓度分布控制层中选择性扩散的杂质元素的浓度降低到光接收层的5×1016 / cm3以下。

10. 发明授权

US07999231B2 Moisture detector, biological body moisture detector, natural product moisture detector, and product/material moisture detector 有权
标题翻译：水分检测仪，生物体水分检测仪，天然产物水分检测仪，以及产品/材料水分检测仪
公开(公告)号：US07999231B2
公开(公告)日：2011-08-16
申请号：US12508008
申请日：2009-07-23
申请人： Yasuhiro Iguchi , Youichi Nagai
发明人： Yasuhiro Iguchi , Youichi Nagai
IPC分类号： G01J5/20
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03042 , H01L31/03046 , Y02E10/544
摘要： A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×1016/cm3 or less. The moisture detector receives light having at least one wavelength included in an absorption band of water lying in a wavelength range of 3 μm or less, thereby detecting moisture.
摘要翻译：水分检测器包括具有pn结的吸收层或受光元件的阵列的光接收元件，其中吸收层具有由III-V族半导体组成的多量子阱结构，pn- 通过选择性地将杂质元素扩散到吸收层中而形成结，并且吸收层中的杂质浓度为5×1016 / cm3以下。水分检测器接收具有在3μm以下的波长范围内的水的吸收带中包含的至少一个波长的光，从而检测水分。

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