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    • 5. 发明授权
    • Method of forming a pattern
    • 形成图案的方法
    • US08105952B2
    • 2012-01-31
    • US12222916
    • 2008-08-19
    • Naoko KiharaHiroyuki HiedaYoshiyuki Kamata
    • Naoko KiharaHiroyuki HiedaYoshiyuki Kamata
    • H01L21/302H01L21/461
    • G11B5/82B82Y10/00B82Y40/00G03F7/0002G11B5/855
    • A pattern forming method is provided, which includes forming, above a substrate, a layer of a diblock copolymer composition containing at least PS and PEO, subjecting the layer to phase separation to obtain a phase-separated layer, thereby forming an easy-to-etch region constituted by PS and having a cylindrical or lamellar configuration extending in a first direction, forming an imprinting resist layer on the phase-separated layer, subjecting the imprinting resist layer to imprinting to form, on the imprinting resist layer, an uneven pattern consisting of projections and recesses extending in a second direction intersecting with the first direction, selectively removing, from the imprinting resist layer, the recesses, thereby leaving only the projections and, at the same time, selectively removing the PS from the phase-separated layer to obtain an etching resistive pattern containing PEO, and etching the substrate using, as a mask, not only the projections but also the etching resistive pattern.
    • 提供了图案形成方法,其包括在基底上形成含有至少PS和PEO的二嵌段共聚物组合物层,使该层相分离以获得相分离层,由此形成易于 蚀刻区域由PS构成并且具有在第一方向上延伸的圆柱形或层状结构,在相分离层上形成刻印抗蚀剂层,使压印抗蚀剂层压印以在压印抗蚀剂层上形成不均匀图案,该不均匀图案包括 在与第一方向相交的第二方向上延伸的突起和凹部,从压印抗蚀剂层选择性地去除凹部,从而仅留下突起,并且同时从相分离层选择性地去除PS 获得含有PEO的蚀刻电阻图案,并且使用不仅突起而且还具有抗蚀刻性,作为掩模来蚀刻基板 ve模式。
    • 6. 发明申请
    • Method of forming a pattern
    • 形成图案的方法
    • US20090078673A1
    • 2009-03-26
    • US12222916
    • 2008-08-19
    • Naoko KiharaHiroyuki HiedaYoshiyuki Kamata
    • Naoko KiharaHiroyuki HiedaYoshiyuki Kamata
    • C25F3/14
    • G11B5/82B82Y10/00B82Y40/00G03F7/0002G11B5/855
    • A pattern forming method is provided, which includes forming, above a substrate, a layer of a diblock copolymer composition containing at least PS and PEO, subjecting the layer to phase separation to obtain a phase-separated layer, thereby forming an easy-to-etch region constituted by PS and having a cylindrical or lamellar configuration extending in a first direction, forming an imprinting resist layer on the phase-separated layer, subjecting the imprinting resist layer to imprinting to form, on the imprinting resist layer, an uneven pattern consisting of projections and recesses extending in a second direction intersecting with the first direction, selectively removing, from the imprinting resist layer, the recesses, thereby leaving only the projections and, at the same time, selectively removing the PS from the phase-separated layer to obtain an etching resistive pattern containing PEO, and etching the substrate using, as a mask, not only the projections but also the etching resistive pattern.
    • 提供了图案形成方法,其包括在基底上形成含有至少PS和PEO的二嵌段共聚物组合物层,使该层相分离以获得相分离层,由此形成易于 蚀刻区域由PS构成并且具有在第一方向上延伸的圆柱形或层状结构,在相分离层上形成刻印抗蚀剂层,使压印抗蚀剂层压印以在压印抗蚀剂层上形成不均匀图案,该不均匀图案包括 在与第一方向相交的第二方向上延伸的突起和凹部,从压印抗蚀剂层选择性地去除凹部,从而仅留下突起,并且同时从相分离层选择性地去除PS 获得含有PEO的蚀刻电阻图案,并且使用不仅突起而且还具有抗蚀刻性,作为掩模来蚀刻基板 ve模式。
    • 8. 发明授权
    • Method for pattern formation
    • 图案形成方法
    • US07931819B2
    • 2011-04-26
    • US11727158
    • 2007-03-23
    • Naoko KiharaHiroyuki Hieda
    • Naoko KiharaHiroyuki Hieda
    • H01L21/302
    • H01L21/3086B82Y10/00Y10S438/942
    • There is provided a method for pattern formation, including a step of coating a composition comprising a block copolymer, a silicon compound, and a solvent for dissolving these components onto an object to form a layer of the composition on the object, a step of subjecting the layer of the composition to self-organization of the block copolymer to cause phase separation into a first phase, in which the silicon compound is localized, having higher etching resistance by heat treatment or/and oxygen plasma treatment, and a second phase comprising a polymer phase and having lower etching resistance by heat treatment or/and oxygen plasma treatment, and thereby forming a pattern layer with a fine pattern, and a step of etching the object using as a mask the thus formed pattern layer.
    • 提供了一种形成图案的方法,其包括将包含嵌段共聚物,硅化合物和溶剂的组合物涂布到物体上以形成该物质层的步骤, 所述组合物层自组织所述嵌段共聚物以引起相分离成其中所述硅化合物定位的第一相,通过热处理或/和氧等离子体处理具有较高的耐蚀刻性,以及第二相,其包含 聚合物相,并且通过热处理或/和氧等离子体处理具有较低的耐腐蚀性,从而形成具有精细图案的图案层,以及使用由此形成的图案层作为掩模蚀刻该物体的步骤。