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1. 发明授权

US4388140A Apparatus for wet treatment of wafer materials 失效
标题翻译：用于湿处理晶片材料的设备
公开(公告)号：US4388140A
公开(公告)日：1983-06-14
申请号：US279314
申请日：1981-07-01
申请人： Yasuaki Nakazato , Yasushi Miyazaki , Makoto Osuga , Masao Kodaira
发明人： Yasuaki Nakazato , Yasushi Miyazaki , Makoto Osuga , Masao Kodaira
IPC分类号： C23F1/08 , H01L21/00 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/67086 , H01L21/67075
摘要： The invention provides a novel apparatus for the wet treatment, e.g. chemical etching treatment, of a plural number of wafer materials such as wafers of high purity silicon semiconductors. The apparatus comprises a liquid tub for containing the treatment liquid, e.g. etching solution, a pair of screw shafts horizontally held in the liquid tub in parallel with each other to be rotatable in the same direction at the same velocity to serve as a kind of screw conveyor and a traveling drum carriage mounted on the screw shafts as engaged with the threads of the shafts at the circular end plates so as to be rotated and transferred in the treatment liquid simultaneously as the screw shafts rotate. The traveling drum carriage holds a wafer basket containing a plural number of the wafer materials perpendicularly to the axis so that the wafer materials are also rotated together with the rotation of the carriage and the surfaces of them are always in contact with the treatment liquid during traveling from one end of the screw shafts to the other.
摘要翻译：本发明提供了用于湿处理的新颖设备，例如，化学蚀刻处理，多个晶片材料，例如高纯度硅半导体的晶片。该装置包括用于容纳处理液体的液体桶。水平地保持在液槽中的一对螺杆轴彼此平行地以相同的速度在相同的方向上旋转，以用作一种螺旋输送机和安装在螺杆轴上的行进滚筒架，作为啮合轴的螺纹在圆形端板处，以便当螺杆轴旋转时同时旋转并转移到处理液中。移动滚筒架保持包含垂直于轴线的多个晶片材料的晶片篮，使得晶片材料也随着滑架的旋转而一起旋转，并且它们的表面在行进期间总是与处理液体接触从螺杆轴的一端到另一端。

2. 发明授权

US5554303A Magnetic recording medium preparation 失效
标题翻译：磁记录介质制备
公开(公告)号：US5554303A
公开(公告)日：1996-09-10
申请号：US397564
申请日：1995-03-02
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara , Noboru Tamai , Yasuaki Nakazato
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara , Noboru Tamai , Yasuaki Nakazato
IPC分类号： G11B5/84 , B44C1/22 , H01L21/00
CPC分类号： G11B5/8404
摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium by forming a magnetic recording layer of a magnetic alloy on the surface of a non-magnetic substrate plate of, e.g., silicon so as to impart the magnetic recording medium with improved CSS (contact-start-stop) characteristics still without affecting the magnetic recording density. The improvement can be obtained by subjecting the surface of the substrate plate, prior to the formation of the magnetic recording layer, to a surface-roughening treatment which is performed either by a dry-process such as plasma etching and reactive ion etching or by a wet-process of anisotropic etching by using an aqueous solution of sodium or potassium hydroxide as the anisotropic etching solution. In particular, the plasma etching or reactive ion etching is conducted in the presence of a particulate scattering source body of aluminum, etc. placed in the vicinity of the CSS zone so that the surface-roughening effect is limited to the CSS zone by the deposition of particulates scattered therefrom leaving the recording zone unroughened not to decrease the recording density.
摘要翻译：通过在例如硅的非磁性基板的表面上形成磁性合金的磁记录层，在制备磁记录介质的方法中提出了一种改进，以使磁记录介质具有改进的 CSS（接触开始 - 停止）特性仍然不影响磁记录密度。可以通过在形成磁记录层之前将基板的表面进行表面粗糙化处理来获得改进，所述表面粗糙化处理通过诸如等离子体蚀刻和反应离子蚀刻之类的干法进行，或通过通过使用氢氧化钠或氢氧化钾的水溶液作为各向异性蚀刻溶液进行各向异性蚀刻的湿法。特别地，等离子体蚀刻或反应离子蚀刻在放置在CSS区域附近的铝等微粒散射源体的存在下进行，使得表面粗糙化效果通过沉积被限制到CSS区域从而离开记录区未变粗糙的颗粒不会降低记录密度。

3. 发明授权

US5191738A Method of polishing semiconductor wafer 失效
标题翻译：抛光半导体晶片的方法
公开(公告)号：US5191738A
公开(公告)日：1993-03-09
申请号：US781644
申请日：1991-10-25
申请人： Yasuaki Nakazato , Hiroo Ogawara
发明人： Yasuaki Nakazato , Hiroo Ogawara
IPC分类号： B24B37/013
CPC分类号： B24B37/013
摘要： A method of polishing a semiconductor wafer, wherein the semiconductor wafer bonded to a plate is polished to a desired thickness by pressing the semiconductor wafer against a rotating turntable side, and at the same time, a thickness regulating member, whose surface layer is made of a material slower to polish than the semiconductor wafer, is arranged on the plane of the plate to control the thickness of the semiconductor wafer. The matrix of the thickness regulating member is made of silicon and the surface layer facing said turntable is a silicon oxide film.
摘要翻译：一种半导体晶片的研磨方法，其中通过将半导体晶片压靠在旋转的转盘侧而将与板结合的半导体晶片抛光至所需厚度，同时，将表面层由将比半导体晶片更慢的抛光材料布置在板的平面上以控制半导体晶片的厚度。厚度调节元件的矩阵由硅制成，面向所述转盘的表面层是氧化硅膜。

4. 发明授权

US5931147A Method of cutting a workpiece with a wire saw 失效
标题翻译：用线锯切割工件的方法
公开(公告)号：US5931147A
公开(公告)日：1999-08-03
申请号：US822087
申请日：1997-03-20
申请人： Yasuaki Nakazato , Noriaki Kubota , Hisakazu Takano , Mitsufumi Koyama
发明人： Yasuaki Nakazato , Noriaki Kubota , Hisakazu Takano , Mitsufumi Koyama
IPC分类号： B24B27/06 , B28D5/04 , B28D1/06
CPC分类号： B28D5/045
摘要： There is disclosed a method of slicing a semiconductor ingot in which the ingot is pressed against a moving wire. A thinner portion of the wire is used at the beginning of slicing to cut a portion of the ingot where the cutting length is shorter than a predetermined length, and a thicker portion of the wire is used when the cutting length becomes longer than the predetermined length. Subsequently, a thinner portion of the wire is used when the slicing approaches to the end and the cutting length becomes shorter than a predetermined length. A portion of the wire used in previous slicing is used as the thinner portion. Alternatively, the thinner portion is formed through use of a die. The slicing method makes it possible to cut the ingot into a plurality of wafers having a uniform thickness.
摘要翻译：公开了一种将晶锭压在移动金属丝上的半导体锭的切割方法。在切割开始时，使用较薄部分的线切割切割长度短于预定长度的锭的一部分，并且当切割长度变得长于预定长度时使用较粗的部分。随后，当切片接近末端并且切割长度变得短于预定长度时，使用较薄的线的部分。在先前切片中使用的电线的一部分用作较薄部分。或者，通过使用模具形成较薄部分。切片方法使得可以将锭切割成具有均匀厚度的多个晶片。

5. 发明授权

US5223080A Method for controlling thickness of single crystal thin-film layer in SOI substrate 失效
标题翻译：控制SOI衬底中单晶薄膜厚度的方法
公开(公告)号：US5223080A
公开(公告)日：1993-06-29
申请号：US799182
申请日：1991-11-27
申请人： Yutaka Ohta , Masatake Katayama , Takao Abe , Yasuaki Nakazato
发明人： Yutaka Ohta , Masatake Katayama , Takao Abe , Yasuaki Nakazato
IPC分类号： H01L21/66 , C30B33/00 , G01B11/06 , H01L21/20 , H01L21/302 , H01L21/3065 , H01L21/762 , H01L21/84
CPC分类号： C30B29/06 , C30B33/00 , G01B11/0683 , H01L21/3065 , H01L21/76251 , H01L22/12 , H01L22/20
摘要： A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said method comprises selectively and hypothetically dividing the entire surface of said single crystal silicon layer destined to undergo a chemical vapor-phase corrosion reaction for the sake of said conversion into necessary minute sections and, at the sametime, taking preparatory measurement of the thickness of said single crystal silicon layer in each of said minute sections, and effecting on each of said minute sections said conversion to a thin film by a chemical vapor-phase corrosion reaction adjusted in accordance with the measured thickness of layer. The conversion to a thin film is attained with the dispersion of thickness of the single crystal silicon layer controlled with high accuracy.

6. 发明授权

US5266824A SOI semiconductor substrate 失效
标题翻译： SOI半导体衬底
公开(公告)号：US5266824A
公开(公告)日：1993-11-30
申请号：US852064
申请日：1992-03-16
申请人： Takao Abe , Yasuaki Nakazato , Atsuo Uchiyama
发明人： Takao Abe , Yasuaki Nakazato , Atsuo Uchiyama
IPC分类号： H01L21/02 , G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/762 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/01 , H01L39/00
CPC分类号： H01L21/76251 , H01L21/2007 , G02F1/13454 , Y10S438/977
摘要： The present invention provides a semiconductor substrate which is formed by bonding wafers together by heat treatment without causing the substrate to be thermally damaged to have thermal strain, separation, cracks, etc. due to the difference in the thermal expansion coefficient of the wafers, and particularly a semiconductor substrate having an SOI structure which can provide a silicon film thin enough to allow various integrated circuits or TFT-LCD to be formed In the present invention, after wafers are bonded temporarily in a low temperature range, one of the wafers is made thin by chemical treatment, then the wafers were bonded fully by heat treatment in a temperature range (where the thermal expansion coefficient of the wafer are not affected) higher than the above low temperature range, and then said one wafer can be made thinner by mechanical grinding or polishing mechano-chemically. Thus according to the present invention, even if a semiconductor substrate is formed by sticking a silicon wafer and a quartz wafer together, damages that will be caused thermally due to thermal expansion can be prevented and a film which is made thin enough required for forming various integrated circuits or TFT-LCD or the like can be easily obtained.

7. 发明授权

US5232870A Method for production of bonded wafer 失效
标题翻译：生产粘结波的方法
公开(公告)号：US5232870A
公开(公告)日：1993-08-03
申请号：US754767
申请日：1991-09-04
申请人： Tatsuo Ito , Yasuaki Nakazato
发明人： Tatsuo Ito , Yasuaki Nakazato
IPC分类号： H01L21/02 , H01L21/20 , H01L21/316 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76251 , H01L21/2007 , H01L21/31654 , Y10S148/012 , Y10S438/974
摘要： A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxygen immediately before the two semiconductor wafers are joined to each other. One of the two semiconductor wafers to be used for the bonded wafer optionally has an oxide film formed on one surface thereof. One of the component wafers of the bonded wafer is optionally polished until the component wafer is reduced to a thin film.

8. 发明授权

US5800251A Apparatus and method of lapping works 失效
标题翻译：研磨工具的装置和方法
公开(公告)号：US5800251A
公开(公告)日：1998-09-01
申请号：US822461
申请日：1997-03-21
申请人： Yasuaki Nakazato , Kazuo Kubota , Hisakazu Takano
发明人： Yasuaki Nakazato , Kazuo Kubota , Hisakazu Takano
IPC分类号： B24B57/02 , B24B5/00
CPC分类号： B24B57/02 , B24B37/042
摘要： A lapping apparatus and a method for effectively utilizing a regenerated abrasive fluid in the lapping process of works such as semiconductor wafers or quartz wafers without causing any damage such as scratches to the works. A work lapping method using a regenerated abrasive fluid prepared from a used abrasive fluid and a new abrasive fluid, which comprises the steps of preliminarily lapping a work using the regenerated abrasive fluid to a predetermined stock removal of the work, and finally lapping the preliminarily lapped work using the new abrasive fluid.
摘要翻译：一种研磨装置和一种在半导体晶片或石英晶片等工件的研磨过程中有效利用再生研磨液的研磨装置和方法，而不会对工件造成任何损伤。一种使用由使用过的磨料流体和新的磨料流体制备的再生磨料流体的工作研磨方法，其包括以下步骤：使用再生磨料流体将工件研磨成预定的料料去除工件，最后研磨预先重叠的使用新的磨料液工作。

9. 发明授权

US5521781A Substrate for magnetic recording medium 失效
标题翻译：磁记录介质基板
公开(公告)号：US5521781A
公开(公告)日：1996-05-28
申请号：US447056
申请日：1995-05-22
申请人： Hideo Kaneko , Yasuaki Nakazato , Toyofumi Aoki , Itsuo Kuroyanagi
发明人： Hideo Kaneko , Yasuaki Nakazato , Toyofumi Aoki , Itsuo Kuroyanagi
IPC分类号： G11B5/73 , G11B5/84 , G11B5/82 , H01L21/302
CPC分类号： G11B5/7315 , G11B5/8404
摘要： Proposed is a substrate of a magnetic recording medium in the form of an annular disk made from a single crystal of silicon which is imparted with greatly improved mechanical strengths to withstand mechanical shocks and high-velocity revolution. Different from conventional annular disks as formed by a mechanical working to form the outer contour and the circular center opening, the peripheral surfaces of the inventive annular disk are freed from the work-stressed surface layer by a chemical etching treatment undertaken after the mechanical working.
摘要翻译：提出了由单晶硅制成的环形盘形式的磁记录介质的衬底，其被赋予大大改进的机械强度以承受机械冲击和高速旋转。不同于通过机械加工形成外轮廓和圆形中心孔的常规环形盘，通过在机械加工之后进行的化学蚀刻处理，本发明的环形盘的周边表面与工作应力表面层脱离。

10. 发明授权

US5395788A Method of producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US5395788A
公开(公告)日：1995-03-07
申请号：US116279
申请日：1993-09-03
申请人： Takao Abe , Yasuaki Nakazato , Atsuo Uchiyama
发明人： Takao Abe , Yasuaki Nakazato , Atsuo Uchiyama
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/762 , H01L21/76
CPC分类号： H01L21/2007 , H01L21/76251 , G02F1/13454 , Y10S148/012 , Y10S148/15
摘要： The present invention provides a method of making a semiconductor substrate having an SOI structure by temporarily bonding together two wafers having different thermal expansion coefficients to allow thinning of at least one of the wafers by chemical and/or mechanical treatment(s) to reduce the risk of strain, separation, cracks to the wafers followed by one or more heat treating steps to fully bond the wafers together. The method can produce semiconductor substrate having an SOI structure which can provide a silicon layer thin enough to allow various integrated circuits, or TFL-LCD or the like to be formed.
摘要翻译：本发明提供一种制造具有SOI结构的半导体衬底的方法，该半导体衬底通过将具有不同热膨胀系数的两个晶片暂时接合在一起，以允许通过化学和/或机械处理使至少一个晶片变薄以降低风险的应变，分离，裂纹到晶片，随后进行一个或多个热处理步骤以将晶片完全结合在一起。该方法可以制造具有SOI结构的半导体衬底，其能够提供足够薄的硅层，以允许形成各种集成电路或TFL-LCD等。

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