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1. 发明授权

US6153530A Post-etch treatment of plasma-etched feature surfaces to prevent corrosion 失效
标题翻译：蚀刻后处理等离子蚀刻特征表面以防止腐蚀
公开(公告)号：US6153530A
公开(公告)日：2000-11-28
申请号：US270286
申请日：1999-03-16
申请人： Yan Ye , Xiaoye Zhao , Chang-Lin Hsieh , Xian-Can Deng , Wen-Chiang Tu , Chung-Fu Chu , Diana Xiaobing Ma
发明人： Yan Ye , Xiaoye Zhao , Chang-Lin Hsieh , Xian-Can Deng , Wen-Chiang Tu , Chung-Fu Chu , Diana Xiaobing Ma
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52 , H01L21/00
CPC分类号： H01L21/02071
摘要： Disclosed herein is a post-etch treatment for plasma etched metal-comprising features in semiconductor devices. The post-etch treatment significantly reduces or eliminates surface corrosion of the etched metal-comprising feature. It is particularly important to prevent the formation of moisture on the surface of the feature surface prior to an affirmative treatment to remove corrosion-causing contaminants from the feature surface. Avoidance of moisture formation is assisted by use of a high vacuum; use of an inert, moisture-free purge gas; and by maintaining the substrate at a sufficiently high temperature to volatilize moisture. The affirmative post-etch treatment utilizes a plasma to expose the etched metal-comprising feature to sufficient hydrogen which is in a kinetic state permitting reaction with residual halogen-comprising residues on the etched surface, while maintaining the etched feature surface at a temperature which supports volatilization of the byproducts of a reaction between the active hydrogen species and the halogen-comprising residues. For an etched copper surface, if moisture forms on the etched surface prior to an affirmative treatment to remove corrosion-causing contaminants, it is very important to avoid contact of the etched surface with pollutants which are capable of forming copper carbonates and/or copper sulfates.
摘要翻译：本文公开了用于半导体器件中等离子体蚀刻金属的特征的后蚀刻处理。蚀刻后处理显着地减少或消除了蚀刻的金属包含特征的表面腐蚀。特别重要的是在肯定处理之前防止在特征表面的表面上形成湿气以从特征表面除去腐蚀性污染物。通过使用高真空来辅助避免水分形成; 使用惰性，无湿气的吹扫气体; 并且通过将基底保持在足够高的温度以使水分挥发。肯定的后蚀刻处理利用等离子体将含蚀刻金属的特征暴露于足够的氢气，该氢气处于动态状态，允许与蚀刻表面上的残留的含卤素残留物反应，同时将蚀刻的特征表面保持在支持活性氢物质与含卤素残基之间的反应的副产物挥发。对于蚀刻的铜表面，如果在进行肯定处理以除去腐蚀性污染物之前在蚀刻表面上形成水分，则避免蚀刻表面与能够形成碳酸铜和/或硫酸铜的污染物接触是非常重要的。

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