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    • 3. 发明授权
    • Active matrix organic electroluminescent device and method of manufacture thereof
    • 有源矩阵有机电致发光器件及其制造方法
    • US08278820B2
    • 2012-10-02
    • US12770726
    • 2010-04-30
    • Junsheng YuYadong JiangJian ZhongHui Lin
    • Junsheng YuYadong JiangJian ZhongHui Lin
    • H01L51/52
    • H01L27/3258
    • An active matrix organic electroluminescent device includes a thin-film transistor, an organic electroluminescent device, and a spacer layer deposited between the thin-film transistor and the organic electroluminescent device, wherein the spacer layer is made of adhesive for a dual curing system selected from the group consisting of ultraviolet curing-thermal curing, ultraviolet curing-microwave curing, ultraviolet curing-anaerobic curing, and ultraviolet curing-electron beam curing system. The present invention solves the poor adhesiveness between the thin-film transistor and the organic electroluminescent device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate of the device.
    • 有源矩阵有机电致发光器件包括薄膜晶体管,有机电致发光器件和沉积在薄膜晶体管和有机电致发光器件之间的间隔层,其中间隔层由用于双固化系统的粘合剂制成,所述双固化系统选自 紫外线固化 - 热固化,紫外线固化 - 微波固化,紫外线固化 - 厌氧固化和紫外线固化 - 电子束固化体系。 本发明解决了薄膜晶体管和有机电致发光器件之间的差的粘合性,并且提高了防潮和防氧化能力。 制备方法简单,有效,能降低成本和难度,大大提高装置的产率。
    • 4. 发明授权
    • Active matrix organic electroluminescent device and method of manufacture thereof
    • 有源矩阵有机电致发光器件及其制造方法
    • US08476824B2
    • 2013-07-02
    • US13407743
    • 2012-02-28
    • Junsheng YuYadong JiangJian ZhongHui Lin
    • Junsheng YuYadong JiangJian ZhongHui Lin
    • H01L33/48
    • H01L27/3258
    • An active matrix organic electroluminescent device includes a thin-film transistor, an organic electroluminescent device, and a spacer layer deposited between the thin-film transistor and the organic electroluminescent device, wherein the spacer layer is made of adhesive for a dual curing system selected from the group consisting of ultraviolet curing-thermal curing, ultraviolet curing-microwave curing, ultraviolet curing-anaerobic curing, and ultraviolet curing-electron beam curing system. The present invention solves the poor adhesiveness between the thin-film transistor and the organic electroluminescent device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate of the device.
    • 有源矩阵有机电致发光器件包括薄膜晶体管,有机电致发光器件和沉积在薄膜晶体管和有机电致发光器件之间的间隔层,其中间隔层由用于双固化系统的粘合剂制成,所述双固化系统选自 紫外线固化 - 热固化,紫外线固化 - 微波固化,紫外线固化 - 厌氧固化和紫外线固化 - 电子束固化体系。 本发明解决了薄膜晶体管和有机电致发光器件之间的差的粘合性,并且提高了防潮和防氧化能力。 制备方法简单,有效,能降低成本和难度,大大提高装置的产率。
    • 5. 发明申请
    • Active matrix organic electroluminescent device and method of manufacture thereof
    • 有源矩阵有机电致发光器件及其制造方法
    • US20110221331A1
    • 2011-09-15
    • US12770726
    • 2010-04-30
    • Junsheng YuYadong JiangJian ZhongHui Lin
    • Junsheng YuYadong JiangJian ZhongHui Lin
    • H01J1/62H01J9/22
    • H01L27/3258
    • An active matrix organic electroluminescent device includes a thin-film transistor, an organic electroluminescent device, and a spacer layer deposited between the thin-film transistor and the organic electroluminescent device, wherein the spacer layer is made of adhesive for a dual curing system selected from the group consisting of ultraviolet curing-thermal curing, ultraviolet curing-microwave curing, ultraviolet curing-anaerobic curing, and ultraviolet curing-electron beam curing system. The present invention solves the poor adhesiveness between the thin-film transistor and the organic electroluminescent device, and improves the moisture and oxygen proof ability. The preparation method is simple, effective, and able to lower the cost and difficulty, and greatly improve the yield rate of the device.
    • 有源矩阵有机电致发光器件包括薄膜晶体管,有机电致发光器件和沉积在薄膜晶体管和有机电致发光器件之间的间隔层,其中间隔层由用于双固化系统的粘合剂制成,所述双固化系统选自 紫外线固化 - 热固化,紫外线固化 - 微波固化,紫外线固化 - 厌氧固化和紫外线固化 - 电子束固化体系。 本发明解决了薄膜晶体管和有机电致发光器件之间的差的粘合性,并且提高了防潮和防氧化能力。 制备方法简单,有效,能降低成本和难度,大大提高装置的产率。
    • 6. 发明申请
    • Electrode material and applications thereof
    • 电极材料及其应用
    • US20120006781A1
    • 2012-01-12
    • US12831110
    • 2010-07-06
    • Yadong JiangTao WangDeen GuKai Yuan
    • Yadong JiangTao WangDeen GuKai Yuan
    • H01B13/00C23C14/34B05D5/12
    • G01J5/024G01J5/20H01L21/02565H01L21/0262
    • A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.
    • 使用金属钒膜作为与钒氧化物或掺杂氧化钒膜接触的提取电极。 电极材料适用于基于钒氧化物或掺杂氧化钒膜的检测器,传感器和光学开关。 金属钒膜有利于降低阵列单元的支撑结构的导热性。 使用金属钒作为源材料的钒膜的制备方法比使用NiCr合金作为源材料的NiCr膜更容易控制。 本发明的提取电极容易获得优异的金属 - 半导体接触特性。 金属钒膜的制备工艺和图案化工艺与IC和MEMS制造工艺具有很好的技术兼容性。
    • 7. 发明授权
    • Microbolometer for infrared detector or terahertz detector and method for manufacturing the same
    • 用于红外探测器或太赫兹探测器的微光度计及其制造方法
    • US09212950B2
    • 2015-12-15
    • US13168467
    • 2011-06-24
    • Xiangdong XuYadong Jiang
    • Xiangdong XuYadong Jiang
    • G01J5/02G01J5/20G01J5/04
    • G01J5/04G01J5/02G01J5/023G01J5/046G01J5/20
    • A microbolometer includes a micro-bridge structure for uncooling infrared or terahertz detectors. The thermistor and light absorbing materials of the micro-bridge structure are the vanadium oxide-carbon nanotube composite film formed by one-dimensional carbon nanotubes and two-dimensional vanadium oxide film. The micro-bridge is a three-layer sandwich structure consisting of a layer of amorphous silicon nitride base film as the supporting and insulating layer of the micro-bridge, a layer or multi-layer of vanadium oxide-carbon nanotube composite film in the middle of the micro-bridge as the heat sensitive and light absorbing layer of the microbolometer, and a layer of amorphous silicon nitride top film as the stress control layer and passivation of the heat sensitive film. The microbolometer and method for manufacturing the same can overcome the shortcomings of the prior art, improve the performance of the device, reduce the cost of raw materials and is suitable for large-scale industrial production.
    • 微辐射热计包括用于冷却红外或太赫兹检测器的微桥结构。 微桥结构的热敏电阻和光吸收材料是由一维碳纳米管和二维氧化钒膜形成的氧化钒 - 碳纳米管复合膜。 微桥是三层夹层结构,由一层非晶氮化硅基膜作为微桥的支撑和绝缘层组成,中层是一层或多层氧化钒 - 碳纳米管复合薄膜 作为微电热计的热敏光吸收层,以及一层非晶氮化硅顶层作为应力控制层和钝化热敏膜。 微量热计及其制造方法可以克服现有技术的缺点,提高器件性能,降低原材料成本,适合大规模工业化生产。
    • 9. 发明授权
    • Electrode material and applications thereof
    • 电极材料及其应用
    • US08404127B2
    • 2013-03-26
    • US12831110
    • 2010-07-06
    • Yadong JiangTao WangDeen GuKai Yuan
    • Yadong JiangTao WangDeen GuKai Yuan
    • H01B13/00
    • G01J5/024G01J5/20H01L21/02565H01L21/0262
    • A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.
    • 使用金属钒膜作为与钒氧化物或掺杂氧化钒膜接触的提取电极。 电极材料适用于基于钒氧化物或掺杂氧化钒膜的检测器,传感器和光学开关。 金属钒膜有利于降低阵列单元的支撑结构的导热性。 使用金属钒作为源材料的钒膜的制备方法比使用NiCr合金作为源材料的NiCr膜更容易控制。 本发明的提取电极容易获得优异的金属 - 半导体接触特性。 金属钒膜的制备工艺和图案化工艺与IC和MEMS制造工艺具有很好的技术兼容性。