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1. 发明申请

US20120006781A1 Electrode material and applications thereof 有权
标题翻译：电极材料及其应用
公开(公告)号：US20120006781A1
公开(公告)日：2012-01-12
申请号：US12831110
申请日：2010-07-06
申请人： Yadong Jiang , Tao Wang , Deen Gu , Kai Yuan
发明人： Yadong Jiang , Tao Wang , Deen Gu , Kai Yuan
IPC分类号： H01B13/00 , C23C14/34 , B05D5/12
CPC分类号： G01J5/024 , G01J5/20 , H01L21/02565 , H01L21/0262
摘要： A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.
摘要翻译：使用金属钒膜作为与钒氧化物或掺杂氧化钒膜接触的提取电极。电极材料适用于基于钒氧化物或掺杂氧化钒膜的检测器，传感器和光学开关。金属钒膜有利于降低阵列单元的支撑结构的导热性。使用金属钒作为源材料的钒膜的制备方法比使用NiCr合金作为源材料的NiCr膜更容易控制。本发明的提取电极容易获得优异的金属 - 半导体接触特性。金属钒膜的制备工艺和图案化工艺与IC和MEMS制造工艺具有很好的技术兼容性。

2. 发明授权

US08404127B2 Electrode material and applications thereof 有权
标题翻译：电极材料及其应用
公开(公告)号：US08404127B2
公开(公告)日：2013-03-26
申请号：US12831110
申请日：2010-07-06
申请人： Yadong Jiang , Tao Wang , Deen Gu , Kai Yuan
发明人： Yadong Jiang , Tao Wang , Deen Gu , Kai Yuan
IPC分类号： H01B13/00
CPC分类号： G01J5/024 , G01J5/20 , H01L21/02565 , H01L21/0262
摘要： A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.
摘要翻译：使用金属钒膜作为与钒氧化物或掺杂氧化钒膜接触的提取电极。电极材料适用于基于钒氧化物或掺杂氧化钒膜的检测器，传感器和光学开关。金属钒膜有利于降低阵列单元的支撑结构的导热性。使用金属钒作为源材料的钒膜的制备方法比使用NiCr合金作为源材料的NiCr膜更容易控制。本发明的提取电极容易获得优异的金属 - 半导体接触特性。金属钒膜的制备工艺和图案化工艺与IC和MEMS制造工艺具有很好的技术兼容性。

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