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1. 发明授权

US07981591B2 Semiconductor buried grating fabrication method 有权
标题翻译：半导体埋光栅制作方法
公开(公告)号：US07981591B2
公开(公告)日：2011-07-19
申请号：US12079524
申请日：2008-03-27
申请人： Yabo Li , Kechang Song , Nicholas John Visovsky , Chung-En Zah
发明人： Yabo Li , Kechang Song , Nicholas John Visovsky , Chung-En Zah
IPC分类号： G03F7/26
CPC分类号： G03F7/0005 , G02B6/124 , G02B6/136 , H01S5/12
摘要： Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.
摘要翻译：在半导体激光器结构中形成光栅轮廓的方法包括以下步骤：提供包括晶片衬底的半导体晶片，设置在晶片衬底上的蚀刻停止层，设置在蚀刻停止层上方的光栅层，设置在光栅上的蚀刻掩模层层和设置在蚀刻掩模层上的光致抗蚀剂层，形成光致抗蚀剂光栅图案，通过干蚀刻将光致抗蚀剂光栅图案转移到光栅层中，以及去除光致抗蚀剂层，选择性地湿蚀刻光栅层以形成光栅轮廓光栅层。在蚀刻掩模和蚀刻停止层之间放置光栅层控制选择性湿蚀刻步骤。该方法还包括通过选择性湿蚀刻去除蚀刻掩模层而不改变光栅轮廓，并且重新生长上覆层以产生半导体激光器结构。

2. 发明申请

US20090246707A1 Semiconductor buried grating fabrication method 有权
标题翻译：半导体埋光栅制作方法
公开(公告)号：US20090246707A1
公开(公告)日：2009-10-01
申请号：US12079524
申请日：2008-03-27
申请人： Yabo Li , Kechang Song , Nicholas John Visovsky , Chung-En Zah
发明人： Yabo Li , Kechang Song , Nicholas John Visovsky , Chung-En Zah
IPC分类号： G03F7/00
CPC分类号： G03F7/0005 , G02B6/124 , G02B6/136 , H01S5/12
摘要： Methods for forming grating profiles in semiconductor laser structures comprise the steps of providing a semiconductor wafer comprising a wafer substrate, an etch stop layer disposed over the wafer substrate, a grating layer disposed over the etch stop layer, an etch mask layer disposed over the grating layer, and a photoresist layer disposed over the etch mask layer, forming a photoresist grating pattern, transferring the photoresist grating pattern into the grating layers via dry etching, and removing the photoresist layer, selectively wet etching the grating layer to form the grating profile in the grating layer. The placement of the grating layer between the etch mask and etch stop layers controls the selective wet etching step. The method also comprises removing the etch mask layer via selective wet etching without altering the grating profile, and regrowing an upper cladding layer to produce the semiconductor laser structure.
摘要翻译：在半导体激光器结构中形成光栅轮廓的方法包括以下步骤：提供包括晶片衬底的半导体晶片，设置在晶片衬底上的蚀刻停止层，设置在蚀刻停止层上方的光栅层，设置在光栅上的蚀刻掩模层层和设置在蚀刻掩模层上的光致抗蚀剂层，形成光致抗蚀剂光栅图案，通过干蚀刻将光致抗蚀剂光栅图案转移到光栅层中，以及去除光致抗蚀剂层，选择性地湿蚀刻光栅层以形成光栅轮廓光栅层。在蚀刻掩模和蚀刻停止层之间放置光栅层控制选择性湿蚀刻步骤。该方法还包括通过选择性湿蚀刻去除蚀刻掩模层而不改变光栅轮廓，并且重新生长上覆层以产生半导体激光器结构。

3. 发明授权

US07723139B2 Quantum well intermixing 有权
标题翻译：量子井混合
公开(公告)号：US07723139B2
公开(公告)日：2010-05-25
申请号：US11906247
申请日：2007-10-01
申请人： Yabo Li , Kechang Song , Chung-En Zah
发明人： Yabo Li , Kechang Song , Chung-En Zah
IPC分类号： H01L21/00
CPC分类号： H01S5/34 , B82Y20/00 , H01L21/02546 , H01L21/02664 , H01L29/205 , H01S5/3414
摘要： Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer comprising upper and lower epitaxial layers, which each include barrier layers, and a quantum well layer disposed between the upper and lower epitaxial layers, applying at least one sacrificial layer over the upper epitaxial layer, and forming a QWI enhanced region and a QWI suppressed region by applying a QWI enhancing layer over a portion of the sacrificial layer, wherein the portion under the QWI enhancing layer is the QWI enhanced region, and the other portion is the QWI suppressed region. The method further comprises the steps of applying a QWI suppressing layer over the QWI enhanced region and the QWI suppressed region, and annealing at a temperature sufficient to cause interdiffusion of atoms between the quantum well layer and the barrier layers of the upper epitaxial layer and the lower epitaxial layer.
摘要翻译：量子阱混合（QWI）的方法的实施例包括提供包括上和下外延层的晶片，每个外延层各自包括势垒层，以及设置在上外延层和下外延层之间的量子阱层，在该外延层上施加至少一个牺牲层并且通过在牺牲层的一部分上施加QWI增强层来形成QWI增强区域和QWI抑制区域，其中QWI增强层下面的部分是QWI增强区域，而另一部分是QWI增强区域抑制区域。该方法还包括以下步骤：在QWI增强区域和QWI抑制区域上施加QWI抑制层，并且在足以引起量子阱层与上部外延层的势垒层之间的原子相互扩散的温度下退火，较低的外延层。

4. 发明申请

US20090086784A1 Quantum well intermixing 有权
标题翻译：量子井混合
公开(公告)号：US20090086784A1
公开(公告)日：2009-04-02
申请号：US11906247
申请日：2007-10-01
申请人： Yabo Li , Kechang Song , Chung-En Zah
发明人： Yabo Li , Kechang Song , Chung-En Zah
IPC分类号： H01S5/125 , H01L21/225
CPC分类号： H01S5/34 , B82Y20/00 , H01L21/02546 , H01L21/02664 , H01L29/205 , H01S5/3414
摘要： Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer comprising upper and lower epitaxial layers, which each include barrier layers, and a quantum well layer disposed between the upper and lower epitaxial layers, applying at least one sacrificial layer over the upper epitaxial layer, and forming a QWI enhanced region and a QWI suppressed region by applying a QWI enhancing layer over a portion of the sacrificial layer, wherein the portion under the QWI enhancing layer is the QWI enhanced region, and the other portion is the QWI suppressed region. The method further comprises the steps of applying a QWI suppressing layer over the QWI enhanced region and the QWI suppressed region, and annealing at a temperature sufficient to cause interdiffusion of atoms between the quantum well layer and the barrier layers of the upper epitaxial layer and the lower epitaxial layer.
摘要翻译：量子阱混合（QWI）的方法的实施例包括提供包括上和下外延层的晶片，每个外延层各自包括势垒层，以及设置在上外延层和下外延层之间的量子阱层，在该外延层上施加至少一个牺牲层并且通过在牺牲层的一部分上施加QWI增强层来形成QWI增强区域和QWI抑制区域，其中QWI增强层下面的部分是QWI增强区域，而另一部分是QWI增强区域抑制区域。该方法还包括以下步骤：在QWI增强区域和QWI抑制区域上施加QWI抑制层，并且在足以引起量子阱层与上部外延层的势垒层之间的原子相互扩散的温度下退火，较低的外延层。

5. 发明申请

US20120268743A1 LASER CHARACTERIZATION SYSTEM AND PROCESS 失效
标题翻译：激光特性系统与工艺
公开(公告)号：US20120268743A1
公开(公告)日：2012-10-25
申请号：US13303648
申请日：2011-11-23
申请人： Yin Wang , Gerard P. Wysocki , Feng Xie , Chung-En Zah
发明人： Yin Wang , Gerard P. Wysocki , Feng Xie , Chung-En Zah
IPC分类号： G01N21/25 , F21V13/12 , F21V13/10
CPC分类号： H01S5/0042 , B82Y20/00 , G01J1/0403 , G01J1/0407 , G01J1/0414 , G01J3/021 , G01J3/1804 , G01J2001/4247 , G01R31/2635 , H01S5/141 , H01S5/3401
摘要： A system and process for automatically characterizing a plurality of external cavity semiconductor laser chips on a semiconductor laser bar separated from a semiconductor wafer. The system includes a diffraction grating and a steering mirror mounted on a rotary stage for rotating the diffraction grating through a range of diffraction angles. A laser bar positioning stage for automatically aligning each laser chip in a laser bar with the diffraction grating. Reflecting a laser beam emitted from a laser chip in a laser bar with diffraction grating and steering mirror to the laser analyzer. Automatically rotating the diffraction grating through a range of diffraction angles relative to the laser beam and automatically characterizing the laser optical properties such as spectra, power, or spatial modes with the laser analyzer at each diffraction angle.
摘要翻译：一种用于在与半导体晶片分离的半导体激光棒上自动表征多个外腔半导体激光器芯片的系统和工艺。该系统包括安装在旋转台上的衍射光栅和转向镜，用于通过衍射角范围旋转衍射光栅。激光棒定位台，用于将激光棒中的每个激光芯片与衍射光栅自动对准。将激光棒中的激光芯片的衍射光栅和导向反射镜的激光束反射到激光分析仪。通过相对于激光束的衍射角自动旋转衍射光栅，并自动表征激光光学性质，如激光分析仪在每个衍射角度下的光谱，功率或空间模式。

6. 发明授权

US08198112B2 Laser diodes comprising QWI output window and waveguide areas and methods of manufacture 失效
标题翻译：包括QWI输出窗口和波导区域的激光二极管以及制造方法
公开(公告)号：US08198112B2
公开(公告)日：2012-06-12
申请号：US12760092
申请日：2010-04-14
申请人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
发明人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01L21/00 , H01L31/0256
CPC分类号： B82Y20/00 , H01S5/0092 , H01S5/06256 , H01S5/162 , H01S2302/00
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长λL短。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括λPL筛选方案，其基于激光波长λL和QWI输出窗口的光致发光波长λPL的比较来确定激光二极管的可靠性。公开并要求保护附加实施例。

7. 发明申请

US20110255567A1 Laser Diodes Comprising QWI Output Window and Waveguide Areas and Methods of Manufacture 失效
标题翻译：包括QWI输出窗口和波导区域的激光二极管和制造方法
公开(公告)号：US20110255567A1
公开(公告)日：2011-10-20
申请号：US12760092
申请日：2010-04-14
申请人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
发明人： Chwan-Yang Chang , Chien-Chih Chen , Martin Hai Hu , Hong Ky Nguyen , Chung-En Zah
IPC分类号： H01S5/34 , H01L21/66 , H01L21/02
CPC分类号： B82Y20/00 , H01S5/0092 , H01S5/06256 , H01S5/162 , H01S2302/00
摘要： In accordance with one embodiment of the present disclosure, a process of manufacturing a semiconductor laser diode comprising a gain section, a QWI output window, and QWI waveguide areas is provided. The QWI waveguide areas are fabricated using quantum well intermixing and define a QWI waveguide portion in the QWI output window of the laser diode. The QWI output window is transparent to the lasing wavelength λL. The QWI waveguide portion in the QWI output window is characterized by an energy bandgap that is larger than an energy bandgap of the gain section such that the band gap wavelength λQWI in the QWI waveguide portion and the QWI output window is shorter than the lasing wavelength λL. The QWI output window is characterized by a photoluminescent wavelength λPL. The manufacturing process comprises a λPL screening protocol that determines laser diode reliability based on a comparison of the lasing wavelength λL and the photoluminescent wavelength λPL of the QWI output window. Additional embodiments are disclosed and claimed.
摘要翻译：根据本公开的一个实施例，提供了制造包括增益部分，QWI输出窗口和QWI波导区域的半导体激光二极管的工艺。使用量子阱混合制造QWI波导区域，并在激光二极管的QWI输出窗口中定义QWI波导部分。 QWI输出窗口对于激光波长λL是透明的。 QWI输出窗口中的QWI波导部分的特征在于能量带隙大于增益部分的能带隙，使得QWI波导部分和QWI输出窗口中的带隙波长λQWI比激光波长λL短。 QWI输出窗口的特征在于光致发光波长λPL。该制造工艺包括λPL筛选方案，其基于激光波长λL和QWI输出窗口的光致发光波长λPL的比较来确定激光二极管的可靠性。公开并要求保护附加实施例。

8. 发明申请

US20100265982A1 Fracture Resistant Metallization Pattern For Semiconductor Lasers 有权
标题翻译：半导体激光器的耐断裂金属化模式
公开(公告)号：US20100265982A1
公开(公告)日：2010-10-21
申请号：US12426563
申请日：2009-04-20
申请人： Satish Chandra Chaparala , Martin Hai Hu , Lawrence Charles Hughes, JR. , Chung-En Zah
发明人： Satish Chandra Chaparala , Martin Hai Hu , Lawrence Charles Hughes, JR. , Chung-En Zah
IPC分类号： H01S5/00 , H01S5/026
CPC分类号： H01S5/0425 , H01S5/0092 , H01S5/06256
摘要： Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.
摘要翻译：提供金属化模式以减少半导体激光器中芯片断裂的可能性。根据本文公开的一个实施例，金属化图案的焊盘边缘延伸穿过激光基板中的多个结晶平面。以这种方式，在任何给定的应力集中开始的裂纹将需要传播到衬底中的许多结晶平面以达到显着的尺寸。本公开的另外的实施例涉及相邻的接触垫对的各自的几何形状和取向。公开和要求保护的另外的实施例。

9. 发明申请

US20090101924A1 Gallium nitride semiconductor device on SOI and process for making same 失效
标题翻译： SOI上的氮化镓半导体器件及其制造方法
公开(公告)号：US20090101924A1
公开(公告)日：2009-04-23
申请号：US11975289
申请日：2007-10-18
申请人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
发明人： Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/007 , H01L21/76254
摘要： Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
摘要翻译：用于制造绝缘体上的氮化镓半导体的方法和装置包括：将单晶硅层结合到透明基板; 并在单晶硅层上生长单晶氮化镓层。

10. 发明授权

US07480317B2 Thermal compensation in semiconductor lasers 失效
标题翻译：半导体激光器的热补偿
公开(公告)号：US07480317B2
公开(公告)日：2009-01-20
申请号：US11526988
申请日：2006-09-26
申请人： Martin Hai Hu , Daniel Ohen Ricketts , Chung-En Zah
发明人： Martin Hai Hu , Daniel Ohen Ricketts , Chung-En Zah
IPC分类号： H01S3/10 , H01S3/04
CPC分类号： H01S5/06804 , H01S5/0612 , H01S5/06256
摘要： The present invention relates to relates generally to semiconductor lasers and, more particularly, to schemes for measuring and controlling the temperature of semiconductor lasers and schemes for wavelength stabilization of semiconductor lasers. According to one embodiment of the present invention, a method of driving a temperature control mechanism in a semiconductor laser is provided. According to the method, signals representing an operating temperature of the semiconductor laser and ambient temperature are generated and a target laser operating temperature that is a function of the ambient temperature signal is established. A temperature control mechanism of the semiconductor laser is then driven to increase a degree of correlation between the operating temperature signal and the target laser operating temperature. Additional embodiments are disclosed and claimed.
摘要翻译：本发明一般涉及半导体激光器，更具体地，涉及用于测量和控制半导体激光器的温度和半导体激光器的波长稳定化方案的方案。根据本发明的一个实施例，提供了一种驱动半导体激光器中的温度控制机构的方法。根据该方法，产生表示半导体激光器的工作温度和环境温度的信号，建立作为环境温度信号的函数的目标激光器工作温度。然后驱动半导体激光器的温度控制机构以增加工作温度信号和目标激光器工作温度之间的相关程度。公开并要求保护附加实施例。

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