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    • 2. 发明授权
    • Laser characterization system and process
    • 激光表征系统和工艺
    • US08670109B2
    • 2014-03-11
    • US13303648
    • 2011-11-23
    • Yin WangGerard P. WysockiFeng XieChung-En Zah
    • Yin WangGerard P. WysockiFeng XieChung-En Zah
    • G01N21/00
    • H01S5/0042B82Y20/00G01J1/0403G01J1/0407G01J1/0414G01J3/021G01J3/1804G01J2001/4247G01R31/2635H01S5/141H01S5/3401
    • A system and process for automatically characterizing a plurality of external cavity semiconductor laser chips on a semiconductor laser bar separated from a semiconductor wafer. The system includes a diffraction grating and a steering mirror mounted on a rotary stage for rotating the diffraction grating through a range of diffraction angles. A laser bar positioning stage for automatically aligning each laser chip in a laser bar with the diffraction grating. Reflecting a laser beam emitted from a laser chip in a laser bar with diffraction grating and steering mirror to the laser analyzer. Automatically rotating the diffraction grating through a range of diffraction angles relative to the laser beam and automatically characterizing the laser optical properties such as spectra, power, or spatial modes with the laser analyzer at each diffraction angle.
    • 一种用于在与半导体晶片分离的半导体激光棒上自动表征多个外腔半导体激光器芯片的系统和工艺。 该系统包括安装在旋转台上的衍射光栅和转向镜,用于通过衍射角范围旋转衍射光栅。 激光棒定位台,用于将激光棒中的每个激光芯片与衍射光栅自动对准。 将激光棒中的激光芯片的衍射光栅和导向反射镜的激光束反射到激光分析仪。 通过相对于激光束的衍射角自动旋转衍射光栅,并自动表征激光光学性质,如激光分析仪在每个衍射角度下的光谱,功率或空间模式。
    • 4. 发明申请
    • P-TYPE ISOLATION REGIONS ADJACENT TO SEMICONDUCTOR LASER FACETS
    • P型隔离区域与半导体激光表面相邻
    • US20120236890A1
    • 2012-09-20
    • US13050058
    • 2011-03-17
    • Catherine G. CaneauFeng XieChung-En Zah
    • Catherine G. CaneauFeng XieChung-En Zah
    • H01S5/343H01L33/00H01S5/34
    • H01S5/3402B82Y20/00H01S5/06256H01S5/1017H01S5/168H01S5/2224H01S5/2231
    • A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated laser sections extending along a waveguide axis of the laser. An active waveguide core is sandwiched between upper and lower n-type cladding layers and the active core and the upper and lower n-type cladding layers extend through the electrically isolated laser sections of the quantum cascade laser. A portion of the upper n-type cladding layer comprises sufficient p-type dopant to have become p-type and to have become an electrical isolation region, which extends across at least a part of the thickness upper n-type cladding layer along a projection separating the sections of the quantum cascade laser. Laser structures are also contemplated where isolation regions are solely provided at the window facet sections of the laser to provide vertical isolation in the facet sections, to reduce the current into the facet regions of the laser, and help minimize potentially harmful facet heating.
    • 提供了量子级联激光器及其制造方法。 量子级联激光器包括沿着激光器的波导轴线延伸的一个或多个p型电隔离区域和多个电隔离的激光器部分。 有源波导芯夹在上,下n型覆层之间,有源芯和上,下n型覆层延伸穿过量子级联激光器的电隔离激光器部分。 上部n型包覆层的一部分包括足够的p型掺杂剂以成为p型并且已经成为电绝缘区域,其沿厚度的上部n型包覆层的至少一部分沿突出部 分离量子级联激光器的部分。 还设想了激光结构,其中仅在激光器的窗口部分处提供隔离区域以在小平面部分中提供垂直隔离,以减少进入激光器的小面区域的电流,并且帮助最小化潜在的有害面积加热。
    • 8. 发明申请
    • MULTI-WAVELENGTH DBR LASER
    • 多波长DBR激光
    • US20130114628A1
    • 2013-05-09
    • US13570719
    • 2012-08-09
    • Catherine Genevieve CaneauFeng XieChung-En Zah
    • Catherine Genevieve CaneauFeng XieChung-En Zah
    • H01S5/125
    • B82Y20/00H01S5/0612H01S5/06256H01S5/1215H01S5/3401H01S5/3402
    • A multi-wavelength distributed Bragg reflector (DBR) laser diode is provided including front and rear DBR sections and a plurality of dedicated tuning signal control nodes. The front DBR section includes a plurality of front wavelength selective grating sections defining a plurality of distinct grating periodicities λ1*, λ2* . . . corresponding to distinct Bragg wavelengths λS1*, λS2* . . . . The rear DBR section comprises a plurality of rear wavelength selective grating sections defining a plurality of distinct grating periodicities λ1, λ2 . . . corresponding to distinct Bragg wavelengths λS1, λS2 . . . . The tuning signal control nodes are associated with corresponding front wavelength selective grating sections, rear wavelength selective grating sections, or both, such that tuning signals applied to one or more of the dedicated tuning signal control nodes spectrally aligns select Bragg wavelengths λS1*, λS2* . . . of the front DBR section with a selected distinct Bragg wavelengths λS1, λS2 . . . of the rear DBR section.
    • 提供了多波长分布布拉格反射器(DBR)激光二极管,其包括前后DBR部分和多个专用调谐信号控制节点。 前DBR部分包括限定多个不同光栅周期性λ1*,λ2*的多个前波长选择光栅部分。 。 。 对应于不同的布拉格波长λS1*,λS2*。 。 。 。 后DBR部分包括限定多个不同的光栅周期性λ1,λ2的多个后波长选择光栅部分。 。 。 对应于不同的布拉格波长λS1,λS2。 。 。 。 调谐信号控制节点与对应的前波长选择光栅部分,后波长选择光栅部分或两者相关联,使得施加到一个或多个专用调谐信号控制节点的调谐信号使选择布拉格波长λS1*,λS2* 。 。 。 具有选定的不同布拉格波长λS1,λS2的前DBR部分。 。 。 的后DBR部分。
    • 10. 发明授权
    • P-type isolation between QCL regions
    • QCL区域之间的P型隔离
    • US08514902B2
    • 2013-08-20
    • US13050026
    • 2011-03-17
    • Catherine G. CaneauFeng XieChung-En Zah
    • Catherine G. CaneauFeng XieChung-En Zah
    • H01S5/00H01L21/00
    • H01S5/06256B82Y20/00H01S5/1017H01S5/168H01S5/2224H01S5/2231H01S5/3402
    • A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated laser sections extending along a waveguide axis of the laser. An active waveguide core is sandwiched between upper and lower n-type cladding layers and the active core and the upper and lower n-type cladding layers extend through the electrically isolated laser sections of the quantum cascade laser. A portion of the upper n-type cladding layer comprises sufficient p-type dopant to have become p-type and to have become an electrical isolation region, which extends across at least a part of the thickness upper n-type cladding layer along a projection separating the sections of the quantum cascade laser.
    • 提供了量子级联激光器及其制造方法。 量子级联激光器包括沿着激光器的波导轴线延伸的一个或多个p型电隔离区域和多个电隔离的激光器部分。 有源波导芯夹在上,下n型覆层之间,有源芯和上,下n型覆层延伸穿过量子级联激光器的电隔离激光器部分。 上部n型包覆层的一部分包括足够的p型掺杂剂以成为p型并且已经成为电绝缘区域,其沿厚度的上部n型包覆层的至少一部分沿突出部 分离量子级联激光器的部分。