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1. 发明授权

US08697316B2 Hard mask spacer structure and fabrication method thereof 有权
标题翻译：硬掩模间隔结构及其制造方法
公开(公告)号：US08697316B2
公开(公告)日：2014-04-15
申请号：US13492934
申请日：2012-06-11
申请人： Ya-Chih Wang , Hai-Han Hung , Wen-Chieh Wang
发明人： Ya-Chih Wang , Hai-Han Hung , Wen-Chieh Wang
IPC分类号： G03F1/38
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/31144
摘要： A hard mask spacer structure includes a first spacer on a device layer, the first spacer defining a plurality of hole patterns and at least an asteriated hole pattern between the hole patterns; and a second spacer on the first spacer and inlaid into the asteriated hole pattern, thereby rounding the asteriated hole pattern.
摘要翻译：硬掩模间隔结构包括在器件层上的第一间隔物，第一间隔物限定多个孔图案，并且在孔图案之间至少形成一个空心孔图案; 以及在第一间隔件上的第二间隔件，并嵌入到空心孔图案中，从而使空心孔图案四舍五入。

2. 发明申请

US20130330660A1 HARD MASK SPACER STRUCTURE AND FABRICATION METHOD THEREOF 有权
标题翻译：硬掩模间隔结构及其制造方法
公开(公告)号：US20130330660A1
公开(公告)日：2013-12-12
申请号：US13492934
申请日：2012-06-11
申请人： Ya-Chih Wang , Hai-Han Hung , Wen-Chieh Wang
发明人： Ya-Chih Wang , Hai-Han Hung , Wen-Chieh Wang
IPC分类号： G03F1/00 , G03F1/46
CPC分类号： H01L21/76816 , H01L21/0337 , H01L21/31144
摘要： A hard mask spacer structure includes a first spacer on a device layer, the first spacer defining a plurality of hole patterns and at least an asteriated hole pattern between the hole patterns; and a second spacer on the first spacer and inlaid into the asteriated hole pattern, thereby rounding the asteriated hole pattern.
摘要翻译：硬掩模间隔结构包括在器件层上的第一间隔物，第一间隔物限定多个孔图案，并且在孔图案之间至少形成一个空心孔图案; 以及在第一间隔件上的第二间隔件，并嵌入到空心孔图案中，从而使空心孔图案四舍五入。

3. 发明授权

US08216946B2 Patterning method 有权
标题翻译：图案化方法
公开(公告)号：US08216946B2
公开(公告)日：2012-07-10
申请号：US12490311
申请日：2009-06-23
申请人： Wei-Cheng Shiu , Hai-Han Hung , Ya-Chih Wang , Chien-Mao Liao , Shing-Yih Shih
发明人： Wei-Cheng Shiu , Hai-Han Hung , Ya-Chih Wang , Chien-Mao Liao , Shing-Yih Shih
IPC分类号： H01L21/302
CPC分类号： H01L21/0337 , H01L21/0338
摘要： A patterning method has a mask layer and undoped patterns sequentially formed on a target layer. A doping process is performed to surfaces of the undoped patterns to form doped patterns from the surfaces of the undoped patterns. A material is filled in the gaps between the doped patterns. A portion of the doped patterns are then removed to expose the top surfaces of the remaining undoped patterns. The material and the exposed undoped patterns are removed. A portion of the mask layer is removed using the remaining doped patterns as a mask to form a first pattern on the mask layer. A portion of the target layer is removed using the mask layer having the first pattern thereon as a mask so as to form on the target layer a second pattern complementary to the first pattern.
摘要翻译：图案化方法具有顺序形成在目标层上的掩模层和未掺杂图案。对未掺杂图案的表面进行掺杂工艺以从未掺杂图案的表面形成掺杂图案。材料填充在掺杂图案之间的间隙中。然后去除部分掺杂图案以露出剩余未掺杂图案的顶表面。材料和暴露的未掺杂图案被去除。使用剩余的掺杂图案作为掩模去除掩模层的一部分，以在掩模层上形成第一图案。使用其上具有第一图案的掩模层作为掩模去除目标层的一部分，以在目标层上形成与第一图案互补的第二图案。

4. 发明申请

US20100323521A1 PATTERNING METHOD 有权
标题翻译：绘图方法
公开(公告)号：US20100323521A1
公开(公告)日：2010-12-23
申请号：US12490311
申请日：2009-06-23
申请人： Wei-Cheng Shiu , Hai-Han Hung , Ya-Chih Wang , Chien-Mao Liao , Shing-Yih Shih
发明人： Wei-Cheng Shiu , Hai-Han Hung , Ya-Chih Wang , Chien-Mao Liao , Shing-Yih Shih
IPC分类号： H01L21/306
CPC分类号： H01L21/0337 , H01L21/0338
摘要： A patterning method has a mask layer and undoped patterns sequentially formed on a target layer. A doping process is performed to surfaces of the undoped patterns to form doped patterns from the surfaces of the undoped patterns. A material is filled in the gaps between the doped patterns. A portion of the doped patterns are then removed to expose the top surfaces of the remaining undoped patterns. The material and the exposed undoped patterns are removed. A portion of the mask layer is removed using the remaining doped patterns as a mask to form a first pattern on the mask layer. A portion of the target layer is removed using the mask layer having the first pattern thereon as a mask so as to form on the target layer a second pattern complementary to the first pattern.
摘要翻译：图案化方法具有顺序形成在目标层上的掩模层和未掺杂图案。对未掺杂图案的表面进行掺杂工艺以从未掺杂图案的表面形成掺杂图案。材料填充在掺杂图案之间的间隙中。然后去除部分掺杂图案以露出剩余未掺杂图案的顶表面。材料和暴露的未掺杂图案被去除。使用剩余的掺杂图案作为掩模去除掩模层的一部分，以在掩模层上形成第一图案。使用其上具有第一图案的掩模层作为掩模去除目标层的一部分，以在目标层上形成与第一图案互补的第二图案。

5. 发明申请

US20100020298A1 LITHOGRAPHY APPARATUS WITH AN OPTICAL FIBER MODULE 有权
标题翻译：具有光纤模块的光刻设备
公开(公告)号：US20100020298A1
公开(公告)日：2010-01-28
申请号：US12211809
申请日：2008-09-16
申请人： Wei-Cheng Shiu , Ya-Chih Wang
发明人： Wei-Cheng Shiu , Ya-Chih Wang
IPC分类号： G03B27/42
CPC分类号： G03B27/42 , G03F7/70325
摘要： A lithography apparatus with an optical fiber module includes: a light source, a photo mask positioned under the light source, a lens positioned under the photo mask, a wafer stage positioned under the lens for supporting the wafer, wherein the wafer includes a dry film. The lithography apparatus further includes an optical fiber module having a front surface facing away from the lens, wherein a gap is between the front surface and the dry film and the gap is smaller than the wavelength of the light source. The DUV (deep ultraviolet) can pass through the optical fiber module. The present invention features a gap smaller than the wavelength of the light source, creating a near-field effect with improved resolution.
摘要翻译：具有光纤模块的光刻设备包括：光源，位于光源下方的光掩模，位于光掩模下方的透镜，位于透镜下面用于支撑晶片的晶片台，其中晶片包括干膜。光刻设备还包括具有背离透镜的前表面的光纤模块，其中在前表面和干膜之间存在间隙，并且间隙小于光源的波长。 DUV（深紫外线）可以通过光纤模块。本发明的特征在于具有小于光源的波长的间隙，产生了具有改善的分辨率的近场效应。

6. 发明授权

US07811723B2 Phase-shift mask and method for forming a pattern 有权
标题翻译：相移掩模和形成图案的方法
公开(公告)号：US07811723B2
公开(公告)日：2010-10-12
申请号：US12128617
申请日：2008-05-29
申请人： Kuo-Kuei Fu , Yuan-Hsun Wu , Ya-Chih Wang
发明人： Kuo-Kuei Fu , Yuan-Hsun Wu , Ya-Chih Wang
IPC分类号： G03F1/00
CPC分类号： G03F1/34 , G03F1/28 , G03F7/2022
摘要： A phase-shift mask for forming a pattern includes a glass substrate and a pattern, a first phase-shift region, a second phase-shift region and a third phase-shift region on the glass substrate. The first phase-shift region and the second phase-shift region are alternately arranged and the third phase-shift regions are formed at the terminal ends of the first phase-shift region.
摘要翻译：用于形成图案的相移掩模包括在玻璃基板上的玻璃基板和图案，第一相移区域，第二相移区域和第三相移区域。交替布置第一相移区域和第二相移区域，并且在第一相移区域的末端形成第三相移区域。

7. 发明授权

US07799697B2 Patterning method in semiconductor manufacturing process including an array of rectangular blocks and filling features 有权
标题翻译：包括矩形块阵列和填充特征的半导体制造工艺中的图案化方法
公开(公告)号：US07799697B2
公开(公告)日：2010-09-21
申请号：US12153024
申请日：2008-05-13
申请人： Wei-Cheng Shiu , Ya-Chih Wang
发明人： Wei-Cheng Shiu , Ya-Chih Wang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0337 , H01L21/76816
摘要： A patterning method in a semiconductor manufacturing process includes the following steps. A base is provided. A target layer and a lining layer are sequentially formed on the surface of the base. The lining layer is patterned to form a plurality of rectangular blocks. A sidewall spacer material layer is formed on the rectangular blocks and the target layer. Part of the sidewall spacer material layer is removed to form a sidewall spacer on the side wall of each of the plurality of rectangular blocks. The plurality of rectangular blocks is removed, and the sidewall spacer is used as a hard sheltering mask to etch and remove part of the target layer. The overlay accuracy is improved and the dimension of the electronic elements can be reduced so that a lot of two-dimension structures can be manufactured on the wafer substrate.
摘要翻译：半导体制造工艺中的图案化方法包括以下步骤。提供基地。目标层和衬层依次形成在基体的表面上。图案化衬里层以形成多个矩形块。在矩形块和目标层上形成侧壁间隔物层。去除侧壁间隔物材料层的一部分以在多个矩形块中的每一个的侧壁上形成侧壁间隔物。去除多个矩形块，并且将侧壁间隔件用作硬遮蔽掩模以蚀刻和去除部分目标层。提高了覆盖精度，并且可以减小电子元件的尺寸，从而可以在晶片衬底上制造大量的二维结构。

8. 发明申请

US20090227108A1 Patterning method in semiconductor manufacturing process 有权
标题翻译：半导体制造工艺中的图案化方法
公开(公告)号：US20090227108A1
公开(公告)日：2009-09-10
申请号：US12153024
申请日：2008-05-13
申请人： Wei-Cheng Shiu , Ya-Chih Wang
发明人： Wei-Cheng Shiu , Ya-Chih Wang
IPC分类号： H01L21/44
CPC分类号： H01L21/0337 , H01L21/76816
摘要： A patterning method in a semiconductor manufacturing process includes the following steps. A base is provided. A target layer and a lining layer are sequentially formed on the surface of the base. The lining layer is patterned to form a plurality of rectangular blocks. A sidewall spacer material layer is formed on the rectangular blocks and the target layer. Part of the sidewall spacer material layer is removed to form a sidewall spacer on the side wall of each of the plurality of rectangular blocks. The plurality of rectangular blocks is removed, and the sidewall spacer is used as a hard sheltering mask to etch and remove part of the target layer. The overlay accuracy is improved and the dimension of the electronic elements can be reduced so that a lot of two-dimension structures can be manufactured on the wafer substrate.
摘要翻译：半导体制造工艺中的图案化方法包括以下步骤。提供基地。目标层和衬层依次形成在基体的表面上。图案化衬里层以形成多个矩形块。在矩形块和目标层上形成侧壁间隔物层。去除侧壁间隔物材料层的一部分以在多个矩形块中的每一个的侧壁上形成侧壁间隔物。去除多个矩形块，并且将侧壁间隔件用作硬遮蔽掩模以蚀刻和去除部分目标层。提高了覆盖精度，并且可以减小电子元件的尺寸，从而可以在晶片衬底上制造大量的二维结构。

9. 发明授权

US08658051B2 Lithography resolution improving method 有权
标题翻译：光刻分辨率改进方法
公开(公告)号：US08658051B2
公开(公告)日：2014-02-25
申请号：US12119275
申请日：2008-05-12
申请人： Kuo-Yao Cho , Wen-Bin Wu , Ya-Chih Wang , Chiang-Lin Shih , Chao-Wen Lay , Chih-Huang Wu
发明人： Kuo-Yao Cho , Wen-Bin Wu , Ya-Chih Wang , Chiang-Lin Shih , Chao-Wen Lay , Chih-Huang Wu
IPC分类号： C23F1/00 , B44C1/22 , H01L21/306
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338
摘要： A method of improving lithography resolution on a semiconductor, including the steps of providing a substrate on which a protecting layer, a first etching layer and a photoresist layer are sequentially formed; patterning the photoresist layer to form an opening so as to partially reveal the first etching layer; implanting a first ion into the revealed first etching layer to form a first doped area; and implanting a second ion into the revealed first etching layer to form a second doped area, wherein the first doped area is independent from the second doped area is provided.
摘要翻译：一种改善半导体上的光刻分辨率的方法，包括提供其上依次形成保护层，第一蚀刻层和光致抗蚀剂层的基板的步骤; 图案化光致抗蚀剂层以形成开口，以便部分地露出第一蚀刻层; 将第一离子注入到所揭示的第一蚀刻层中以形成第一掺杂区域; 以及将第二离子注入到所揭示的第一蚀刻层中以形成第二掺杂区域，其中所述第一掺杂区域与所述第二掺杂区域无关。

10. 发明授权

US08368869B2 Lithography apparatus with an optical fiber module 有权
标题翻译：具有光纤模块的平版印刷设备
公开(公告)号：US08368869B2
公开(公告)日：2013-02-05
申请号：US12211809
申请日：2008-09-16
申请人： Wei-Cheng Shiu , Ya-Chih Wang
发明人： Wei-Cheng Shiu , Ya-Chih Wang
IPC分类号： G02B6/04 , G02B6/06 , G03B27/42 , G03B27/54 , F21V7/04
CPC分类号： G03B27/42 , G03F7/70325
摘要： A lithography apparatus with an optical fiber module includes: a light source, a photo mask positioned under the light source, a lens positioned under the photo mask, a wafer stage positioned under the lens for supporting the wafer, wherein the wafer includes a dry film. The lithography apparatus further includes an optical fiber module having a front surface facing away from the lens, wherein a gap is between the front surface and the dry film and the gap is smaller than the wavelength of the light source. The DUV (deep ultraviolet) can pass through the optical fiber module. The present invention features a gap smaller than the wavelength of the light source, creating a near-field effect with improved resolution.
摘要翻译：具有光纤模块的光刻设备包括：光源，位于光源下方的光掩模，位于光掩模下方的透镜，位于透镜下方的用于支撑晶片的晶片台，其中晶片包括干膜。光刻设备还包括具有背离透镜的前表面的光纤模块，其中在前表面和干膜之间存在间隙，并且间隙小于光源的波长。 DUV（深紫外线）可以通过光纤模块。本发明的特征在于具有小于光源的波长的间隙，产生了具有改善的分辨率的近场效应。

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