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1. 发明申请

US20100088458A1 OPERATION METHOD OF MEMORY 有权
标题翻译：存储器的操作方法
公开(公告)号：US20100088458A1
公开(公告)日：2010-04-08
申请号：US12245093
申请日：2008-10-03
申请人： YU MAO KAO , YUNG LI JI , CHIH NAN YEN , FUJA SHONE
发明人： YU MAO KAO , YUNG LI JI , CHIH NAN YEN , FUJA SHONE
IPC分类号： G06F12/02 , G06F12/00 , G06F12/10
CPC分类号： G06F12/04 , G06F12/0246 , G06F2212/1016 , Y02D10/13
摘要： An operation method of a memory includes the steps of calculating an offset of sequential write commands and the beginning of pages of a block of a non-volatile memory; shifting the block by the offset; and directly writing data from a host to the pages except the first and last pages of the block by the sequential write commands. In an embodiment, the pages are logical pages providing optimal writing efficiency and are determined before calculating the offset. The step of shifting the block by the offset is to increase corresponding logical block addresses (LBA) in the pages by the offset.
摘要翻译：存储器的操作方法包括以下步骤：计算顺序写入命令的偏移和非易失性存储器的块的开头; 将块移动偏移; 并且通过顺序写入命令直接将数据从主机写入除块的第一页和最后一页之外的页面。在一个实施例中，页面是提供最佳写入效率的逻辑页面，并且在计算偏移量之前确定。通过偏移移位块的步骤是通过偏移增加页面中的对应逻辑块地址（LBA）。

2. 发明申请

US20090198944A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20090198944A1
公开(公告)日：2009-08-06
申请号：US12026375
申请日：2008-02-05
申请人： FUJA SHONE , CHIH NAN YEN , YUNG LI JI
发明人： FUJA SHONE , CHIH NAN YEN , YUNG LI JI
IPC分类号： G06F12/02
CPC分类号： G06F13/409
摘要： An adaptive semiconductor memory device is used for being inserted into a host for storage. The semiconductor memory device comprises a non-volatile memory and a switch. The switch can be a logical switch or a physical switch that controls the semiconductor memory device to be in compliance with either a first specification version or a second specification version of the semiconductor memory device. The second specification version in comparison with the first specification version is used for higher capacity applications.
摘要翻译：自适应半导体存储器件被用于插入主机以进行存储。半导体存储器件包括非易失性存储器和开关。开关可以是控制半导体存储器件符合半导体存储器件的第一规范版本或第二规范版本的逻辑开关或物理开关。与第一个规范版本相比，第二个规范版本用于更高容量的应用。

3. 发明申请

US20090198882A1 METHOD OF WEAR LEVELING FOR NON-VOLATILE MEMORY AND APPARATUS USING THE SAME 有权
标题翻译：用于非易失性存储器的磨损方法和使用该方法的装置
公开(公告)号：US20090198882A1
公开(公告)日：2009-08-06
申请号：US12026400
申请日：2008-02-05
申请人： YUNG LI JI , CHIA CHEN CHANG , CHIH NAN YEN , FUJA SHONE
发明人： YUNG LI JI , CHIA CHEN CHANG , CHIH NAN YEN , FUJA SHONE
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , C07D401/12 , G06F2212/7201 , G06F2212/7211
摘要： A method of wear leveling for a non-volatile memory is disclosed. A non-volatile memory is divided into windows and gaps, with each gap between two adjacent windows. The windows comprise physical blocks mapped to logical addresses, and the gaps comprise physical blocks not mapped to logical addresses. The windows are shifted through the non-volatile memory in which the mapping to the physical blocks in the window to be shifted is changed to the physical blocks in the gap.
摘要翻译：公开了一种用于非易失性存储器的磨损均衡的方法。非易失性存储器分为窗口和间隙，两个相邻窗口之间的每个间隙。窗口包括映射到逻辑地址的物理块，并且间隙包括未映射到逻辑地址的物理块。窗口移动通过非易失性存储器，在该非易失性存储器中，将要移位的窗口中的物理块的映射改变为间隙中的物理块。

4. 发明申请

US20100115213A1 MEMORY APPARATUS AND MEMORY MANAGEMENT METHOD OF THE SAME 审中-公开
标题翻译：内存设备及其内存管理方法
公开(公告)号：US20100115213A1
公开(公告)日：2010-05-06
申请号：US12265913
申请日：2008-11-06
申请人： HSIN HSIEN WU , YUNG LI JI , CHIH NAN YEN , FUJA SHONE
发明人： HSIN HSIEN WU , YUNG LI JI , CHIH NAN YEN , FUJA SHONE
IPC分类号： G06F12/00 , G06F12/06 , G06F13/00
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： A method of memory management for an apparatus having a non-volatile memory and a volatile memory includes the steps of forming a tree structure of entries in the volatile memory, in which the tree structure has a left branch and a right branch, and a difference of heights of the left branch and the right branch is equal to or less than one; and accessing an entry in the volatile memory through the tree structure.
摘要翻译：一种用于具有非易失性存储器和易失性存储器的装置的存储器管理方法包括以下步骤：在易失性存储器中形成条目的树结构，其中树结构具有左分支和右分支，以及差分左分支和右分支的高度等于或小于1; 并通过树结构访问易失性存储器中的条目。

5. 发明申请

US20090259819A1 METHOD OF WEAR LEVELING FOR NON-VOLATILE MEMORY 审中-公开
标题翻译：非易失性存储器的磨损方法
公开(公告)号：US20090259819A1
公开(公告)日：2009-10-15
申请号：US12100136
申请日：2008-04-09
申请人： YEN MING CHEN , SHIH CHIEH TAI , YUNG LI JI , CHIH NAN YEN , FUJA SHONE
发明人： YEN MING CHEN , SHIH CHIEH TAI , YUNG LI JI , CHIH NAN YEN , FUJA SHONE
IPC分类号： G06F12/02 , G06F13/00 , G06F12/00
CPC分类号： G06F13/4239
摘要： A method of wear leveling for a non-volatile memory is performed as follows. First, the non-volatile memory is divided into a plurality of zones including at least a first zone and a second zone. The first zone is written and/or erased in which one or more logical blocks have higher writing hit rate, and therefore the corresponding physical blocks in the first zone will be written more often. The next step is to find one or more free physical blocks in second zone. The physical blocks of the first zone are replaced by the physical blocks of the second zone if the number of write and/or erase to the first zone exceeds a threshold number. The replacement of physical blocks in the first zone by the physical blocks in the second zone may include the steps of copying data from the physical blocks in the first zone to the physical block in the second zone, and changing the pointer of logical blocks to point to the physical blocks in the second zone.
摘要翻译：如下执行用于非易失性存储器的磨损均衡的方法。首先，非易失性存储器被分成包括至少第一区域和第二区域的多个区域。写入和/或擦除第一区域，其中一个或多个逻辑块具有较高的写入命中率，因此第一区域中相应的物理块将被更频繁地写入。下一步是在第二个区域中找到一个或多个空闲的物理块。如果第一区的写入次数和/或擦除次数超过阈值，则第一区的物理块被第二区的物理块替换。通过第二区域中的物理块来替换第一区域中的物理块可以包括以下步骤：将数据从第一区域中的物理块复制到第二区域中的物理块，并将逻辑块的指针改变为点到第二区的物理块。

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