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1. 发明申请

US20110223073A1 OZONE OXIDATION ACCELERATOR, OZONE OXIDATION ACCELERATOR COMPOSITION, AND OZONE TREATMENT METHOD 有权
标题翻译：臭氧氧化加速器，臭氧氧化加速器组合物和臭氧处理方法
公开(公告)号：US20110223073A1
公开(公告)日：2011-09-15
申请号：US13113151
申请日：2011-05-23
申请人： YOSHIKUNI TAKEUCHI , TAKU OGURA , MASARU TAMURA
发明人： YOSHIKUNI TAKEUCHI , TAKU OGURA , MASARU TAMURA
IPC分类号： B01J19/08
CPC分类号： C11D11/0047 , C02F1/78 , C02F2303/02 , C02F2303/04 , C02F2303/12 , C02F2305/04
摘要： The present invention relates to an ozone oxidation accelerator containing a compound of which a 0.5% by mass aqueous solution at 25° C. has a dynamic surface tension at 100 msec of 70 mN/m or less and a dynamic surface tension at 30 sec of 55 to 67 mN/m, and an ozone oxidation accelerator composition containing the ozone oxidation accelerator. The present invention also relates to an ozone treatment method including a step of supplying ozone into water to be treated that contains a substance to be treated, in the presence of the ozone oxidation accelerator composition.
摘要翻译：本发明涉及一种臭氧氧化促进剂，其包含在25℃下0.5质量％水溶液的动态表面张力为100毫秒为70mN / m以下的动态表面张力和30秒的动态表面张力的化合物 55〜67mN / m，臭氧氧化促进剂组合物含有臭氧氧化促进剂。本发明还涉及一种臭氧处理方法，包括在臭氧氧化促进剂组合物的存在下，向被处理物中供给臭氧的步骤。

2. 发明申请

US20090073740A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20090073740A1
公开(公告)日：2009-03-19
申请号：US11776491
申请日：2007-07-11
申请人： TAKU OGURA , MASAAKI MIHARA , YOSHIKI KAWAJIRI
发明人： TAKU OGURA , MASAAKI MIHARA , YOSHIKI KAWAJIRI
IPC分类号： G11C5/06 , G11C11/00 , G11C7/00
CPC分类号： G11C11/412 , G11C14/00 , G11C14/0063
摘要： An object of this invention is to provide a rewritable nonvolatile memory cell that can have a wide reading margin, and can control both a word line and a bit line by changing the level of Vcc. As a solution, a flip-flop is formed by cross (loop) connect of inverters comprising memory transistors that can control a threshold voltage by charge injection into the side spacer of the transistors. In the case of writing data to one memory transistor, a high voltage is supplied to a source of the memory transistor through a source line and a high voltage is supplied to a gate of the memory transistor through a load transistor of the other side inverter. In the case of erasing the written data, a high voltage is supplied to the source of the memory transistor through the source line.
摘要翻译：本发明的目的是提供一种可以具有宽的读取余量的可重写非易失性存储单元，并且可以通过改变Vcc的电平来控制字线和位线。作为解决方案，触发器通过包括存储器晶体管的逆变器的交叉（环路）连接形成，该存储器晶体管可以通过电荷注入到晶体管的侧隔板中来控制阈值电压。在向一个存储晶体管写入数据的情况下，通过源极线将高电压提供给存储晶体管的源极，并且通过另一侧反相器的负载晶体管将高电压提供给存储晶体管的栅极。在擦除写入数据的情况下，通过源极线将高电压提供给存储晶体管的源极。

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