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    • 8. 发明申请
    • Pillar devices and methods of making thereof
    • 支柱装置及其制造方法
    • US20090179310A1
    • 2009-07-16
    • US12007781
    • 2008-01-15
    • Vance DuntonS. Brad HernerPaul Wai Kie PoonChuanbin PanMichael ChanMichael KoneveckiUsha Raghuram
    • Vance DuntonS. Brad HernerPaul Wai Kie PoonChuanbin PanMichael ChanMichael KoneveckiUsha Raghuram
    • H01L29/868H01L21/20
    • H01L27/1021H01L29/8613H01L29/8615H01L29/868
    • A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.
    • 制造半导体器件的方法包括提供包含多个开口的绝缘层,在绝缘层中的多个开口中并在绝缘层之上形成第一半导体层,以及去除第一半导体层的第一部分, 第一半导体层的第一导电类型的第二部分保留在绝缘层中的多个开口的下部,并且绝缘层中的多个开口的上部保持未填充。 该方法还包括在绝缘层中的多个开口的上部和绝缘层上形成第二半导体层,以及去除位于绝缘层之上的第二半导体层的第一部分。 第二半导体层的第二导电类型的第二部分保留在绝缘层中的多个开口的上部,以在多个开口中形成多个柱状二极管。