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1. 发明授权

US09496333B2 Resurf high voltage diode 有权
公开(公告)号：US09496333B2
公开(公告)日：2016-11-15
申请号：US14622068
申请日：2015-02-13
申请人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
IPC分类号： H01L29/66 , H01L29/06 , H01L29/739 , H01L29/861
CPC分类号： H01L29/063 , H01L29/0649 , H01L29/0692 , H01L29/66356 , H01L29/7391 , H01L29/861
摘要： A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact regions separated from one another by a shallow trench isolation region (114, 115), along with a buried cathode extension region (104) formed under a RESURF anode extension region (106, 107) such that the cathode extension region (104) extends beyond the cathode contact (131) to be sandwiched between upper and lower regions (103, 106, 107) of opposite conductivity type.

2. 发明授权

US09385229B2 Semiconductor device with improved breakdown voltage 有权
标题翻译：具有提高击穿电压的半导体器件
公开(公告)号：US09385229B2
公开(公告)日：2016-07-05
申请号：US14495508
申请日：2014-09-24
申请人： Hongning Yang , Xin Lin , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Xin Lin , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L29/7824 , H01L29/0623 , H01L29/063 , H01L29/0634 , H01L29/0653 , H01L29/1095 , H01L29/4175 , H01L29/66659 , H01L29/66681 , H01L29/7835 , H01L29/78624
摘要： Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first region of semiconductor material having a first conductivity type and a first dopant concentration, a second region of semiconductor material having a second conductivity type overlying the first region, a drift region of semiconductor material having the first conductivity type overlying the second region, and a drain region of semiconductor material having the first conductivity type. The drift region and the drain region are electrically connected, with at least a portion of the drift region residing between the drain region and the second region, and at least a portion of the second region residing between that drift region and the first region. In one or more exemplary embodiments, the first region abuts an underlying insulating layer of dielectric material.
摘要翻译：提供半导体器件结构和相关的制造方法。示例性的半导体器件结构包括具有第一导电类型和第一掺杂剂浓度的第一半导体材料区域，具有覆盖第一区域的第二导电类型的第二半导体材料区域，具有第一导电类型的半导体材料的漂移区域覆盖第二区域，以及具有第一导电类型的半导体材料的漏极区域。漂移区域和漏极区域电连接，漂移区域的至少一部分位于漏极区域和第二区域之间，并且第二区域的至少一部分位于该漂移区域和第一区域之间。在一个或多个示例性实施例中，第一区域邻接介电材料的下层绝缘层。

3. 发明授权

US09165918B1 Composite semiconductor device with multiple threshold voltages 有权
标题翻译：具有多个阈值电压的复合半导体器件
公开(公告)号：US09165918B1
公开(公告)日：2015-10-20
申请号：US14272027
申请日：2014-05-07
申请人： Hongning Yang , Xin Lin , Pete Rodriguez , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Xin Lin , Pete Rodriguez , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/66 , H01L27/02 , H01L29/78 , H01L29/08 , H01L29/10 , H01L27/088 , H01L21/8234 , H01L21/265
CPC分类号： H01L27/0248 , H01L21/26513 , H01L21/26586 , H01L21/823412 , H01L21/823418 , H01L27/0266 , H01L27/088 , H01L29/0653 , H01L29/0696 , H01L29/0865 , H01L29/0882 , H01L29/1045 , H01L29/1079 , H01L29/1095 , H01L29/66575 , H01L29/66659 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate connected in parallel with one another, and a second constituent transistor including a second plurality of transistor structures in the semiconductor substrate connected in parallel with one another. The first and second constituent transistors are disposed laterally adjacent to one another and connected in parallel with one another. Each transistor structure of the first plurality of transistor structures includes a non-uniform channel such that the first constituent transistor has a higher threshold voltage level than the second constituent transistor.
摘要翻译：一种器件包括半导体衬底，第一组成晶体管，其包括彼此并联连接的半导体衬底中的第一多个晶体管结构;以及第二组成晶体管，包括在半导体衬底中并联连接的第二多个晶体管结构，另一个。第一和第二组成晶体管彼此横向相邻设置并彼此并联连接。第一多个晶体管结构的每个晶体管结构包括非均匀沟道，使得第一构成晶体管具有比第二构成晶体管更高的阈值电压电平。

4. 发明授权

US09136323B2 Drain-end drift diminution in semiconductor devices 有权
标题翻译：半导体器件的漏极漂移减少
公开(公告)号：US09136323B2
公开(公告)日：2015-09-15
申请号：US14486104
申请日：2014-09-15
申请人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/06 , H01L29/66 , H01L29/78 , H01L29/08 , H01L29/10
CPC分类号： H01L29/063 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/66659 , H01L29/66681 , H01L29/7835
摘要： A method of fabricating a transistor includes forming a field isolation region in a substrate. After forming the field isolation region, dopant is implanted in a first region of a substrate for formation of a drift region. A drain region is formed in a second region of the substrate. The first and second regions laterally overlap to define a conduction path for the transistor. The first region does not extend laterally across the second region.
摘要翻译：制造晶体管的方法包括在衬底中形成场隔离区域。在形成场隔离区之后，将掺杂剂注入到用于形成漂移区的衬底的第一区域中。漏极区形成在衬底的第二区域中。第一和第二区域横向重叠以限定晶体管的导电路径。第一区域不横向跨越第二区域延伸。

5. 发明申请

US20150004768A1 DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件中的引出端DRIFT分解
公开(公告)号：US20150004768A1
公开(公告)日：2015-01-01
申请号：US14486104
申请日：2014-09-15
申请人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Daniel J. Blomberg , Xu Cheng , Xin Lin , Won Gi Min , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/06 , H01L29/66 , H01L29/10
CPC分类号： H01L29/063 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/66659 , H01L29/66681 , H01L29/7835
摘要： A method of fabricating a transistor includes forming a field isolation region in a substrate. After forming the field isolation region, dopant is implanted in a first region of a substrate for formation of a drift region. A drain region is formed in a second region of the substrate. The first and second regions laterally overlap to define a conduction path for the transistor. The first region does not extend laterally across the second region.
摘要翻译：制造晶体管的方法包括在衬底中形成场隔离区域。在形成场隔离区之后，将掺杂剂注入到用于形成漂移区的衬底的第一区域中。漏极区形成在衬底的第二区域中。第一和第二区域横向重叠以限定晶体管的导电路径。第一区域不横向跨越第二区域延伸。

6. 发明授权

US08575692B2 Near zero channel length field drift LDMOS 有权
标题翻译：近零通道长度场漂移LDMOS
公开(公告)号：US08575692B2
公开(公告)日：2013-11-05
申请号：US13025350
申请日：2011-02-11
申请人： Hongning Yang , Xin Lin , Jiang-Kai Zuo
发明人： Hongning Yang , Xin Lin , Jiang-Kai Zuo
IPC分类号： H01L29/78
CPC分类号： H01L29/66681 , H01L21/26586 , H01L29/0653 , H01L29/086 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/66689 , H01L29/7801 , H01L29/7816
摘要： Adverse tradeoff between BVDSS and Rdson in LDMOS devices employing a drift space (52, 152) adjacent the drain (56, 156), is avoided by providing a lightly doped region (511, 1511) of a first conductivity type (CT) separating the first CT drift space (52, 152) from an opposite CT WELL region (53, 153) in which the first CT source (57, 157) is located, and a further region (60, 160) of the opposite CT (e.g., formed by an angled implant) extending through part of the WELL region (53, 153) under an edge (591, 1591) of the gate (59, 159) located near a boundary (531, 1531) of the WELL region (53, 153) into the lightly doped region (511, 1511), and a shallow still further region (66, 166) of the first CT Ohmically coupled to the source (57, 157) and ending near the gate edge (591, 159) whereby the effective channel length (61, 161) in the further region (60, 160) is reduced to near zero. Substantial improvement in BVDSS and/or Rdson can be obtained without degrading the other or significant adverse affect on other device properties.
摘要翻译：通过提供第一导电类型（CT）的轻掺杂区域（511,1511）来避免使用邻近漏极（56,156）的漂移空间（52,152）的LDMOS器件中的BVDSS和Rdson之间的不利权衡，从第一CT源（57,157）所在的相对的CT WELL区域（53,153）的第一CT漂移空间（52,152）和相对CT的另一区域（60,160）由位于靠近所述WELL区域（53,153）的边界（531,1531）附近的所述门（59,159）的边缘（591,1591）下延伸穿过所述WELL区域（53,153）的一部分的一部分， 153和157）连接到所述源极（57,157）并且在所述栅极边缘（591,159）附近结束的所述第一CT的浅的另外的区域（66,166），由此另一区域（60,160）中的有效通道长度（61,161）减小到接近零。可以获得BVDSS和/或Rdson的显着改善，而不会降低对其他设备性能的其他影响或显着的不利影响。

7. 发明授权

US09543379B2 Semiconductor device with peripheral breakdown protection 有权
标题翻译：具有外围故障保护的半导体器件
公开(公告)号：US09543379B2
公开(公告)日：2017-01-10
申请号：US14218330
申请日：2014-03-18
申请人： Hongning Yang , Xin Lin , Zhihong Zhang , Jiang-Kai Zuo
发明人： Hongning Yang , Xin Lin , Zhihong Zhang , Jiang-Kai Zuo
IPC分类号： H01L29/66 , H01L29/06 , H01L29/78 , H01L29/36 , H01L21/8234 , H01L27/12
CPC分类号： H01L29/063 , H01L21/76283 , H01L21/823418 , H01L21/823481 , H01L27/1203 , H01L29/0619 , H01L29/0649 , H01L29/0653 , H01L29/0688 , H01L29/0878 , H01L29/0886 , H01L29/1087 , H01L29/36 , H01L29/66659 , H01L29/66681 , H01L29/66689 , H01L29/7823 , H01L29/7824 , H01L29/7835
摘要： A device includes a semiconductor substrate, source and drain regions disposed in the semiconductor substrate and having a first conductivity type, a body region disposed in the semiconductor substrate, having a second conductivity type, and in which the source region is disposed, a drift region disposed in the semiconductor substrate, having the first conductivity type, and through which charge carriers drift during operation upon application of a bias voltage between the source and drain regions, a device isolation region disposed in the semiconductor substrate and laterally surrounding the body region and the drift region, and a breakdown protection region disposed between the device isolation region and the body region and having the first conductivity type.
摘要翻译：一种器件包括半导体衬底，设置在半导体衬底中并具有第一导电类型的源极和漏极区域，设置在半导体衬底中的体区，具有第二导电类型，并且其中设置源极区，漂移区设置在具有第一导电类型的半导体衬底中，并且在施加源极和漏极区域之间的偏置电压时，电荷载体在工作期间漂移，设置在半导体衬底中并横向围绕身体区域的器件隔离区域和漂移区域和设置在器件隔离区域和体区之间并具有第一导电类型的击穿保护区域。

8. 发明申请

US20150228713A1 High Voltage Diode 有权
标题翻译：高压二极管
公开(公告)号：US20150228713A1
公开(公告)日：2015-08-13
申请号：US14697195
申请日：2015-04-27
申请人： Xin Lin , Hongning Yang , Jiang-Kai Zuo
发明人： Xin Lin , Hongning Yang , Jiang-Kai Zuo
IPC分类号： H01L29/06 , H01L29/861 , H01L27/12
CPC分类号： H01L29/063 , H01L27/1207 , H01L29/0692 , H01L29/66204 , H01L29/861
摘要： A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact regions separated from one another by a shallow trench isolation region (114, 115), along with a non-uniform cathode region (104) and peripheral anode regions (106, 107) which define vertical and horizontal p-n junctions under the anode contact regions (130, 132), including a horizontal cathode/anode junction that is shielded by the heavily doped anode contact region (132).
摘要翻译：提供了沟槽隔离的RESURF二极管结构（100），其包括衬底（150），其中形成阳极（130,132）和阴极（131）接触区域，所述接触区域由浅沟槽隔离区域（114,115））以及在阳极接触区域（130,132）下限定垂直和水平pn结的不均匀阴极区（104）和外围阳极区（106,107），其包括被屏蔽的水平阴极/阳极结通过重掺杂的阳极接触区域（132）。

9. 发明授权

US08748981B2 Semiconductor device and related fabrication methods 有权
标题翻译：半导体器件及相关制造方法
公开(公告)号：US08748981B2
公开(公告)日：2014-06-10
申请号：US13606438
申请日：2012-09-07
申请人： Hongning Yang , Xin Lin , Jiang-Kai Zuo
发明人： Hongning Yang , Xin Lin , Jiang-Kai Zuo
IPC分类号： H01L29/66 , H01L29/76
CPC分类号： H01L29/66719 , H01L29/0653 , H01L29/0878 , H01L29/1087 , H01L29/402 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/7809 , H01L29/7812
摘要： Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first vertical drift region of semiconductor material, a second vertical drift region of semiconductor material, and a buried lateral drift region of semiconductor material that abuts the vertical drift regions. In one or more embodiments, the vertical drift regions and buried lateral drift region have the same conductivity type, wherein a body region of the opposite conductivity type overlies the buried lateral drift region between the vertical drift regions.
摘要翻译：提供半导体器件结构和相关的制造方法。示例性的半导体器件结构包括半导体材料的第一垂直漂移区域，半导体材料的第二垂直漂移区域和邻接垂直漂移区域的半导体材料的埋入横向漂移区域。在一个或多个实施例中，垂直漂移区域和掩埋横向漂移区域具有相同的导电类型，其中相反导电类型的体区域覆盖在垂直漂移区域之间的掩埋横向漂移区域。

10. 发明申请

US20140110814A1 Resurf High Voltage Diode 有权
标题翻译： Resurf高压二极管
公开(公告)号：US20140110814A1
公开(公告)日：2014-04-24
申请号：US13656103
申请日：2012-10-19
申请人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
发明人： Xin Lin , Daniel J. Blomberg , Hongning Yang , Jiang-Kai Zuo
IPC分类号： H01L21/329 , H01L29/861
CPC分类号： H01L29/063 , H01L29/0649 , H01L29/0692 , H01L29/66356 , H01L29/7391 , H01L29/861
摘要： A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact regions separated from one another by a shallow trench isolation region (114, 115), along with a buried cathode extension region (104) formed under a RESURF anode extension region (106, 107) such that the cathode extension region (104) extends beyond the cathode contact (131) to be sandwiched between upper and lower regions (103, 106, 107) of opposite conductivity type.
摘要翻译：提供了沟槽隔离的RESURF二极管结构（100），其包括衬底（150），其中形成阳极（130,132）和阴极（131）的接触区域，所述接触区域通过浅沟槽隔离区域（114,115）），以及形成在RESURF阳极延伸区域（106,107）下方的掩埋阴极延伸区域（104），使得阴极延伸区域（104）延伸超出阴极接触（131）以夹在上部和下部区域之间 103,106,107）。

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