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    • 2. 发明授权
    • Methods for fabricating planar heater structures for ejection devices
    • 用于制造喷射装置的平面加热器结构的方法
    • US08541248B2
    • 2013-09-24
    • US13248298
    • 2011-09-29
    • Yimin GuanBurton Joyner, IIZach Reitmeier
    • Yimin GuanBurton Joyner, IIZach Reitmeier
    • H01L21/02
    • B41J2/14112B41J2/1601B41J2/1628B41J2/1631H01L28/20
    • Methods and apparatus teach a substrate wafer having a plurality of plugs configured there within. The method also includes depositing and patterning a layer of a second metallic material over the substrate wafer, providing a layer of a dielectric material of a predetermined thickness over the patterned layer of the second metallic material, and conducting chemical mechanical polishing of the layer of the dielectric material to form a planarized top surface while exposing the patterned layer of the second metallic material. The method further includes cleaning the planarized top surface, depositing and patterning a resistor film over the planarized top surface, depositing one or more blanket films over the patterned resistor film, and patterning and etching the one or more blanket films. Further disclosed are planar heater structures and additional methods for fabricating the planar heater structures.
    • 方法和装置教导具有在其内部配置的多个插塞的衬底晶片。 该方法还包括在衬底晶片上沉积和图案化第二金属材料层,在第二金属材料的图案化层上提供预定厚度的电介质材料层,并对该层的第 电介质材料,以在暴露第二金属材料的图案化层的同时形成平坦化的顶表面。 该方法还包括清洁平坦化的顶表面,在平坦化的顶表面上沉积和图案化电阻器膜,在图案化的电阻膜上沉积一个或多个覆盖膜,以及图案化和蚀刻一个或多个覆盖膜。 还公开了平面加热器结构和用于制造平面加热器结构的附加方法。
    • 3. 发明授权
    • Planar heater structures for ejection devices
    • 用于喷射装置的平面加热器结构
    • US08833908B2
    • 2014-09-16
    • US13248300
    • 2011-09-29
    • Yimin GuanBurton Joyner, IIZach Reitmeier
    • Yimin GuanBurton Joyner, IIZach Reitmeier
    • B41J2/05B41J2/16B41J2/14
    • B41J2/14112B41J2/1601B41J2/1628B41J2/1646
    • Disclosed is a method for fabricating a planar heater structure for an ejection device. The method includes providing a substrate wafer having a plurality of plugs configured therewithin. The method also includes depositing and patterning a layer of a second metallic material over the substrate wafer, providing a layer of a dielectric material of a predetermined thickness over the patterned layer of the second metallic material, and conducting chemical mechanical polishing of the layer of the dielectric material to form a planarized top surface while exposing the patterned layer of the second metallic material. The method further includes cleaning the planarized top surface, depositing and patterning a resistor film over the planarized top surface, depositing one or more blanket films over the patterned resistor film, and patterning and etching the one or more blanket films. Further disclosed are planar heater structures and additional methods for fabricating the planar heater structures.
    • 公开了一种用于制造用于喷射装置的平面加热器结构的方法。 该方法包括提供具有在其中配置的多个插头的衬底晶片。 该方法还包括在衬底晶片上沉积和图案化第二金属材料层,在第二金属材料的图案化层上提供预定厚度的电介质材料层,并对该层的第 电介质材料,以在暴露第二金属材料的图案化层的同时形成平坦化的顶表面。 该方法还包括清洁平坦化的顶表面,在平坦化的顶表面上沉积和图案化电阻器膜,在图案化的电阻膜上沉积一个或多个覆盖膜,以及图案化和蚀刻一个或多个覆盖膜。 还公开了平面加热器结构和用于制造平面加热器结构的附加方法。
    • 4. 发明授权
    • Capping layer for insulator in micro-fluid ejection heads
    • 微流体喷射头中的绝缘体封盖层
    • US08376523B2
    • 2013-02-19
    • US12764357
    • 2010-04-21
    • Yimin GuanBurton Joyner, II
    • Yimin GuanBurton Joyner, II
    • B41J2/05
    • B41J2/14129B41J2002/14387
    • A micro-fluid ejection head has a resistor layer defining a heater element. An insulative layer underlies the heater element and a capping layer on the insulative layer substantially prevents ion mobility between the resistor and insulative layers. Resistance stability of the heater has been shown improved as has adhesion of the heater to the insulator. Representative layers include insulation of methyl silesquioxane (MSQ) in a thickness of about 5000 Angstroms or more, while the cap is a silicon nitride in a thickness of about 2000 Angstroms or less. Other capping layers include silicon carbide, silicon oxide or dielectrics. The resistor layer typifies TaAlN in a thickness of about 350 Angstroms, including overlying anode and cathode conductors that define the heater. Coating layers are also disclosed as are thermal barrier layers.
    • 微流体喷射头具有限定加热器元件的电阻层。 绝缘层位于加热器元件的下面,并且绝缘层上的覆盖层基本上防止电阻器和绝缘层之间的离子迁移。 由于加热器对绝缘体的粘附性,加热器的电阻稳定性得到改善。 代表性层包括厚度约5000埃或更大的甲基倍半硅氧烷(MSQ)的绝缘,而盖是约2000埃或更小的厚度的氮化硅。 其它覆盖层包括碳化硅,氧化硅或电介质。 电阻层以大约350埃的厚度代表TaAlN,包括覆盖加热器的阳极和阴极导体。 还公开了涂层是热障层。