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1. 发明授权

US06806202B2 Method of removing silicon oxide from a surface of a substrate 失效
公开(公告)号：US06806202B2
公开(公告)日：2004-10-19
申请号：US10309500
申请日：2002-12-03
申请人： Xiaoming Hu , James B. Craigo , Ravindranath Droopad , John L. Edwards, Jr. , Yong Liang , Yi Wei , Zhiyi Yu
发明人： Xiaoming Hu , James B. Craigo , Ravindranath Droopad , John L. Edwards, Jr. , Yong Liang , Yi Wei , Zhiyi Yu
IPC分类号： H01L21461
CPC分类号： H01L21/02046
摘要： A method for removing silicon oxide from a surface of a substrate is disclosed. The method includes depositing material onto the silicon oxide (110) and heating the substrate surface to a sufficient temperature to form volatile compounds including the silicon oxide and the deposited material (120). The method also includes heating the surface to a sufficient temperature to remove any remaining deposited material (130).

2. 发明授权

US07169619B2 Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process 失效
标题翻译：使用低温，低压，富碱土金属的方法在邻位衬底上制造半导体结构的方法
公开(公告)号：US07169619B2
公开(公告)日：2007-01-30
申请号：US10299246
申请日：2002-11-19
申请人： Yong Liang , Ravindranath Droopad , Xiaoming Hu , Jun Wang , Yi Wei , Zhiyi Yu
发明人： Yong Liang , Ravindranath Droopad , Xiaoming Hu , Jun Wang , Yi Wei , Zhiyi Yu
IPC分类号： H01L21/00
CPC分类号： H01L21/02197 , C30B23/02 , C30B29/24 , H01L21/02293 , H01L21/31604 , H01L21/31691
摘要： High quality epitaxial layers of monocrystalline oxide materials (24) can be grown overlying monocrystalline substrates (22) such as large silicon wafers. The monocrystalline oxide layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.
摘要翻译：单晶氧化物材料（24）的高质量外延层可以生长在覆盖单晶衬底（22）如大硅晶片上。单晶氧化物层（24）包括通过氧化硅的非晶界面层（28）与硅晶片间隔开的单晶氧化物层。非晶界面层用作衬底和缓冲层之间的去耦层，使得衬底和缓冲器是晶体图，化学和介电解耦的。此外，可以使用低压，低温，富碱土金属的工艺在邻近衬底上形成高质量的外延容纳缓冲层。

3. 发明授权

US06885065B2 Ferromagnetic semiconductor structure and method for forming the same 失效
标题翻译：铁磁半导体结构及其形成方法
公开(公告)号：US06885065B2
公开(公告)日：2005-04-26
申请号：US10299801
申请日：2002-11-20
申请人： Yong Liang , Ravindranath Droopad , Hao Li , Zhiyi Yu
发明人： Yong Liang , Ravindranath Droopad , Hao Li , Zhiyi Yu
IPC分类号： H01L21/8246 , H01L27/22 , H01L29/72
CPC分类号： H01L27/22 , B82Y10/00 , H01L43/12
摘要： A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.
摘要翻译：提供了铁磁半导体结构。该结构包括单晶半导体衬底和覆盖半导体衬底的掺杂氧化钛锐钛矿层。

4. 发明授权

US06916717B2 Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate 有权
标题翻译：用于生长单晶氧化物层和用于在单晶衬底上制造半导体器件的方法
公开(公告)号：US06916717B2
公开(公告)日：2005-07-12
申请号：US10137383
申请日：2002-05-03
申请人： Hao Li , Ravindranath Droopad , Daniel S. Marshall , Yi Wei , Xiao M. Hu , Yong Liang
发明人： Hao Li , Ravindranath Droopad , Daniel S. Marshall , Yi Wei , Xiao M. Hu , Yong Liang
IPC分类号： H01L33/00 , C30B25/18 , H01L21/20 , H01L21/205 , H01L21/316 , H01L31/10 , H01S5/026 , H01L21/336
CPC分类号： C30B25/18 , H01L21/02271 , H01L21/02318 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02521 , H01L21/31604 , H01L21/31691
摘要： High quality monocrystalline metal oxide layers are grown on a monocrystalline substrate such as a silicon wafer. The monocrystalline metal oxide is grown on the silicon substrate at a temperature low enough to prevent deleterious and simultaneous oxidation of the silicon substrate. After a layer of 1-3 monolayers of the monocrystalline oxide is grown, the growth is stopped and the crystal quality of that layer is improved by a higher temperature anneal. Following the anneal, the thickness of the layer can be increased by restarting the low temperature growth. An amorphous silicon oxide layer can be grown at the interface between the monocrystalline metal oxide layer and the silicon substrate after the thickness of the monocrystalline oxide reaches a few monolayers.
摘要翻译：高品质单晶金属氧化物层生长在诸如硅晶片的单晶衬底上。在硅衬底上生长单晶金属氧化物，其温度足够低以防止硅衬底的有害和同时的氧化。在生长单层氧化物的1-3层单层之后，停止生长，并且通过较高温度退火来改善该层的晶体质量。退火后，通过重新开始低温生长可以提高层的厚度。在单晶氧化物的厚度达到几个单层之后，可以在单晶金属氧化物层和硅衬底之间的界面处生长非晶氧化硅层。

5. 发明授权

US06890816B2 Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices 失效
标题翻译：包括外延钙钛矿层的化合物半导体结构和用于制造半导体结构和器件的方法
公开(公告)号：US06890816B2
公开(公告)日：2005-05-10
申请号：US10359879
申请日：2003-02-07
申请人： Yong Liang , Ravindranath Droopad
发明人： Yong Liang , Ravindranath Droopad
IPC分类号： C30B25/18 , H01L21/316 , H01L21/8242 , C30B11/00 , C30B23/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/02197 , C30B25/18 , H01L21/31691 , Y10S438/938
摘要： High quality epitaxial layers of monocrystalline perovskite materials (18) can be grown overlying monocrystalline substrates (12) such as gallium arsenide wafers by forming a metal template layer (16) on the monocrystalline substrate. The structure includes a metal-containing layer (16) to mitigate unwanted oxidation of underlying layers and a low-temperature seed layer (19) that prevents degradation of an epitaxial layer (14) during growth of the perovskite layer (18).
摘要翻译：通过在单晶衬底上形成金属模板层（16），可以将单晶钙钛矿材料（18）的高质量外延层生长在叠加的单晶衬底（12）如砷化镓晶片上。该结构包括用于减轻下层的不希望氧化的含金属层（16）和防止在钙钛矿层（18）生长期间外延层（14）退化的低温晶种层（19）。

6. 发明申请

US20060003602A1 Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof 有权
标题翻译：半导体结构和制造半导体结构的方法包括用镧，镧系金属或其组合改性的氧化铪
公开(公告)号：US20060003602A1
公开(公告)日：2006-01-05
申请号：US10883180
申请日：2004-06-30
申请人： Zhiyi Yu , Jay Curless , Yong Liang
发明人： Zhiyi Yu , Jay Curless , Yong Liang
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C14/0026 , C23C14/083 , H01L21/02192 , H01L21/0234 , H01L21/28194 , H01L21/3115 , H01L21/31645 , H01L29/513 , H01L29/517
摘要： Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnOx, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.
摘要翻译：提供半导体结构和制造半导体结构的方法，其包括用氧化镧或镧系金属氧化物改性的氧化铪层。根据本发明的实施例的半导体结构包括覆盖在衬底上的氧化铪的非晶层。含镧掺杂剂或含镧系金属的掺杂剂包含在氧化铪的非晶层内。该方法包括在衬底上生长氧化铪的非晶层。氧化铪的非晶层掺杂有具有化学配方LnO x x的掺杂剂，其中Ln是镧，镧系金属或其组合，X是大于零的任何数。掺杂步骤可以在氧化铪的非晶层生长期间或之后进行。

7. 发明授权

US07141857B2 Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof 有权
公开(公告)号：US07141857B2
公开(公告)日：2006-11-28
申请号：US10883180
申请日：2004-06-30
申请人： Zhiyi Yu , Jay A. Curless , Yong Liang , Alexandra Navrotsky , Sergey Ushakov , Bich-Yen Nguyen , Alexander Demkov
发明人： Zhiyi Yu , Jay A. Curless , Yong Liang , Alexandra Navrotsky , Sergey Ushakov , Bich-Yen Nguyen , Alexander Demkov
IPC分类号： H01L29/94 , H01L21/469
CPC分类号： H01L21/02181 , C23C14/0026 , C23C14/083 , H01L21/02192 , H01L21/0234 , H01L21/28194 , H01L21/3115 , H01L21/31645 , H01L29/513 , H01L29/517
摘要： Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnOx, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.

8. 发明授权

US06852588B1 Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers 有权
标题翻译：制造包括外延Hf 3 Si 2层的半导体结构的方法
公开(公告)号：US06852588B1
公开(公告)日：2005-02-08
申请号：US10883181
申请日：2004-06-30
申请人： Zhiyi Yu , Jay A. Curless , Yong Liang
发明人： Zhiyi Yu , Jay A. Curless , Yong Liang
IPC分类号： H01L21/285 , H01L21/8242
CPC分类号： H01L21/28518
摘要： Methods are provided for fabricating semiconductor structures and semiconductor device structures utilizing epitaxial Hf3Si2 layers. A process in accordance with one embodiment of the invention begins by disposing a silicon substrate in a processing chamber. The pressure within the processing chamber and a temperature of the silicon substrate in the range of approximately 250° C. to approximately 700° C. is established. A layer of Hf3Si2 then is grown overlying the silicon substrate at a rate in the range of about one (1) to about five (5) monolayers per minute.
摘要翻译：提供了用于制造使用外延Hf 3 Si 2层的半导体结构和半导体器件结构的方法。根据本发明的一个实施例的方法开始于将硅衬底设置在处理室中。处理室内的压力和硅衬底的温度在大约250℃至大约700℃的范围内。然后以约1（1）至约5（5）单层/分钟的速率在硅衬底上生长一层Hf 3 Si 2。

9. 发明申请

US20080072961A1 Nanosized,dye-sensitized photovoltaic cell 审中-公开
标题翻译：纳米化染料敏化光伏电池
公开(公告)号：US20080072961A1
公开(公告)日：2008-03-27
申请号：US11528124
申请日：2006-09-26
申请人： Yong Liang , Jon J. Candelaria , Kurt W. Eisenbeiser , Yi Wei
发明人： Yong Liang , Jon J. Candelaria , Kurt W. Eisenbeiser , Yi Wei
IPC分类号： H01L31/00
CPC分类号： H01L51/422 , B82Y10/00 , H01L51/0048 , H01L51/0086 , H01L51/4253 , Y02E10/549
摘要： A sensitized photovoltaic device (10) provides for a reduction of the charge recombination rate and charge transport time. The device (10) includes a first electrode (12) comprising a transparent conducting oxide and a plurality of carbon nanostructures (16) formed thereon. A first layer (18) is formed on the carbon nanostructure (16) and comprises a first conduction band level (44). A second layer (20) is formed on the first oxide (18) and comprises a second conduction band level (46) higher than the first conduction band level (44). A sensitizer (22) is formed on the second layer (20) and comprises a lowest unoccupied molecular orbital level (48) higher than the second conduction band level (46). An electrolyte (24) is positioned over the sensitizer (22), and a second electrode (26) comprising a transparent conducting oxide and a layer of catalyst is formed over the electrolyte (24).
摘要翻译：敏化光伏器件（10）提供电荷复合速率和电荷传输时间的降低。装置（10）包括包括透明导电氧化物和形成在其上的多个碳纳米结构（16）的第一电极（12）。第一层（18）形成在碳纳米结构（16）上并且包括第一导带水平（44）。第二层（20）形成在第一氧化物（18）上并且包括高于第一导带电平（44）的第二导带电平（46）。敏化剂（22）形成在第二层（20）上并且包括比第二导带水平（46）高的最低未占据的分子轨道水平（48）。电解质（24）位于敏化剂（22）上方，并且在电解质（24）上方形成包括透明导电氧化物和催化剂层的第二电极（26）。

10. 发明申请

US20080037584A1 MULTIMODE xDSL LINE CARD ADAPTIVE ACTIVATION METHOD AND ITS SYSTEM 有权
标题翻译：多模式xDSL线卡自适应激活方法及其系统
公开(公告)号：US20080037584A1
公开(公告)日：2008-02-14
申请号：US11611086
申请日：2006-12-14
申请人： Yong Liang , Haihong Wei , Binfeng Wang , Xinjun Zhang
发明人： Yong Liang , Haihong Wei , Binfeng Wang , Xinjun Zhang
IPC分类号： H04J3/22
CPC分类号： H04Q11/0421 , H04Q2213/13003 , H04Q2213/13039 , H04Q2213/13109 , H04Q2213/13199 , H04Q2213/13298
摘要： This invention presents a multimode xDSL line card adaptive activation method, comprising the following steps: A) A master controller is installed and configured with multiple templates based on the modes of operation supported by a line card, and forwards templates to said line card; B) The line card receives templates forwarded by the master controller and activates the line card communications chip; C) The communications chip communicates with the remote CPE and decides on a mode of operation according to a handshake protocol; D) The line card employs a corresponding template according to the mode of operation chosen in Step C, and practices circuit activation with the CPE. This invention solves the existing problems in current multimode xDSL technology of poor compatibility and inability to adapt effectively.
摘要翻译：本发明提出一种多模xDSL线卡自适应激活方法，包括以下步骤：A）主控制器根据线卡所支持的操作模式安装并配置多个模板，并将模板转发到所述线卡; B）线卡接收由主控制器转发的模板，激活线卡通信芯片; C）通信芯片与远程CPE通信，根据握手协议决定操作模式; D）线卡根据步骤C中选择的操作模式采用相应的模板，并用CPE实现电路激活。本发明解决了当前多模式xDSL技术存在的兼容性差，无法有效适应的问题。

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