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1. 发明申请

US20070054504A1 Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
标题翻译：后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力
公开(公告)号：US20070054504A1
公开(公告)日：2007-03-08
申请号：US11221303
申请日：2005-09-07
申请人： Xiaolin Chen , Srinivas Nemani , DongQing Li , Jeffrey Munro , Marlon Menezes
发明人： Xiaolin Chen , Srinivas Nemani , DongQing Li , Jeffrey Munro , Marlon Menezes
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/31612
摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.
摘要翻译：描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。在基底上沉积介电层之后，将衬底提升到衬底接收表面上方的升高位置，并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力。本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并提高衬底的温度。在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中首先在沉积后直接在处理位置处暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置暴露于等离子体。

2. 发明申请

US20120177846A1 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：US20120177846A1
公开(公告)日：2012-07-12
申请号：US13236388
申请日：2011-09-19
申请人： DongQing Li , Jingmei Liang , Xiaolin Chen , Nitin K. Ingle
发明人： DongQing Li , Jingmei Liang , Xiaolin Chen , Nitin K. Ingle
IPC分类号： C23C16/40 , C23C16/56 , C23C16/50
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

3. 发明授权

US08563445B2 Conformal layers by radical-component CVD 有权
标题翻译：通过自由基成分CVD形成保形层
公开(公告)号：US08563445B2
公开(公告)日：2013-10-22
申请号：US13024487
申请日：2011-02-10
申请人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
发明人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
IPC分类号： H01L21/469
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅氮前驱物和自由基 - 氮前体。主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。

4. 发明授权

US07465680B2 Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
标题翻译：后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力
公开(公告)号：US07465680B2
公开(公告)日：2008-12-16
申请号：US11221303
申请日：2005-09-07
申请人： Xiaolin Chen , Srinivas D. Nemani , DongQing Li , Jeffrey C. Munro , Marlon E. Menezes
发明人： Xiaolin Chen , Srinivas D. Nemani , DongQing Li , Jeffrey C. Munro , Marlon E. Menezes
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/31612
摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.
摘要翻译：描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。在基底上沉积介电层之后，将衬底提升到衬底接收表面上方的升高位置并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力。本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并提高衬底的温度。在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中首先在沉积后直接在处理位置处暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置暴露于等离子体。

5. 发明申请

US20060286764A1 DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL 失效
公开(公告)号：US20060286764A1
公开(公告)日：2006-12-21
申请号：US11422150
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/76
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

6. 发明申请

US20110217851A1 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 有权
标题翻译：通过放射性元素CVD的合适层
公开(公告)号：US20110217851A1
公开(公告)日：2011-09-08
申请号：US13024487
申请日：2011-02-10
申请人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
发明人： Jingmei Liang , Xiaolin Chen , DongQing Li , Nitin K. Ingle
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形介电层（例如，硅 - 氮（Si-N-H）膜）的方法，材料和系统，其由无碳硅氮前驱体和自由基 - 氮前体主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。

7. 发明授权

US07799698B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07799698B2
公开(公告)日：2010-09-21
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01I21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

8. 发明申请

US20090035918A1 POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF HDP-CVD SIO2 失效
标题翻译：后沉积等离子体处理以提高HDP-CVD SIO2的拉伸应力
公开(公告)号：US20090035918A1
公开(公告)日：2009-02-05
申请号：US12252260
申请日：2008-10-15
申请人： Xiaolin Chen , Srinivas D. Nemani , DongQing Li , Jeffrey C. Munro , Marlon E. Menezes
发明人： Xiaolin Chen , Srinivas D. Nemani , DongQing Li , Jeffrey C. Munro , Marlon E. Menezes
IPC分类号： H01L21/76
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/31612
摘要： Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench is etched into the substrate. The substrate is transferred into a chamber suitable for dielectric deposition. A dielectric layer is deposited over the substrate, filling the trench and covering mesa regions adjacent to the trench. The substrate is raised to an elevated position above the substrate support and exposed to a plasma which increases the tensile stress of the substrate. The substrate is removed from the dielectric deposition chamber, and portions of the dielectric layer are removed so that the dielectric layer is even with the topmost portion of the nitride layer. The nitride and pad oxide layers are removed to form the STI structure.
摘要翻译：描述了通过在升高的位置处的等离子体处理来增加层的拉伸应力的电介质层的形成方法。在一个实施例中，将氧化物和氮化物层沉积在衬底上并图案化以形成开口。沟槽被蚀刻到衬底中。将基底转移到适合于电介质沉积的室中。介电层沉积在衬底上，填充沟槽并覆盖与沟槽相邻的台面区域。将衬底升高到衬底支撑件上方的升高位置并暴露于等离子体，这增加了衬底的拉伸应力。从电介质沉积室取出基板，除去介质层的部分，使得介质层与氮化物层的最上部分均匀。去除氮化物层和衬垫氧化物层以形成STI结构。

9. 发明申请

US20050136684A1 Gap-fill techniques 审中-公开
标题翻译：间隙填充技术
公开(公告)号：US20050136684A1
公开(公告)日：2005-06-23
申请号：US10746695
申请日：2003-12-23
申请人： Kevin Mukai , Kimberly Branshaw , Zheng Yuan , Xinyun Xia , Xiaolin Chen , Dongqing Li , M. Karim , Van Ton , Cary Ching , Steve Ghanayeim , Nitin Ingle
发明人： Kevin Mukai , Kimberly Branshaw , Zheng Yuan , Xinyun Xia , Xiaolin Chen , Dongqing Li , M. Karim , Van Ton , Cary Ching , Steve Ghanayeim , Nitin Ingle
IPC分类号： C23C16/04 , C23C16/40 , C23C16/505 , H01L21/316 , H01L21/762 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号： C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76224 , H01L21/76828 , H01L21/76832 , H01L21/76837
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.
摘要翻译：可以单独地或组合地采用各种技术来改善通过化学气相沉积（CVD）形成的电介质材料的间隙填充性能。在一种方法中，使用次大气化学气相沉积（SACVD）沉积第一介电层，随后通过高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积的第二介电层，。在另一种方法中，在从远程等离子体室流入处理室的反应性离子物质的存在下沉积SACVD介电层，该处理室在沉积过程中执行蚀刻。在另一种方法中，可以使用SACVD与在高温下沉积的氧化物层组合来填充高方位沟槽。

10. 发明授权

US07745351B2 Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 失效
标题翻译：后沉积等离子体处理以增加HDP-CVD SIO2的拉伸应力
公开(公告)号：US07745351B2
公开(公告)日：2010-06-29
申请号：US12252260
申请日：2008-10-15
申请人： Xiaolin Chen , Srinivas D. Nemani , DongQing Li , Jeffrey C. Munro , Marlon E. Menezes
发明人： Xiaolin Chen , Srinivas D. Nemani , DongQing Li , Jeffrey C. Munro , Marlon E. Menezes
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/31612
摘要： Methods of forming a dielectric layer where the tensile stress of the layer is increased by a plasma treatment at an elevated position are described. In one embodiment, oxide and nitride layers are deposited on a substrate and patterned to form an opening. A trench is etched into the substrate. The substrate is transferred into a chamber suitable for dielectric deposition. A dielectric layer is deposited over the substrate, filling the trench and covering mesa regions adjacent to the trench. The substrate is raised to an elevated position above the substrate support and exposed to a plasma which increases the tensile stress of the substrate. The substrate is removed from the dielectric deposition chamber, and portions of the dielectric layer are removed so that the dielectric layer is even with the topmost portion of the nitride layer. The nitride and pad oxide layers are removed to form the STI structure.
摘要翻译：描述了通过在升高的位置处的等离子体处理来增加层的拉伸应力的电介质层的形成方法。在一个实施例中，将氧化物和氮化物层沉积在衬底上并图案化以形成开口。沟槽被蚀刻到衬底中。将基底转移到适合于电介质沉积的室中。介电层沉积在衬底上，填充沟槽并覆盖与沟槽相邻的台面区域。将衬底升高到衬底支撑件上方的升高位置并暴露于等离子体，这增加了衬底的拉伸应力。从电介质沉积室取出基板，除去介质层的部分，使得介质层与氮化物层的最上部分均匀。去除氮化物层和衬垫氧化物层以形成STI结构。

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