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1. 发明申请

US20060286764A1 DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL 失效
公开(公告)号：US20060286764A1
公开(公告)日：2006-12-21
申请号：US11422150
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/76
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

2. 发明申请

US20060228886A1 DEPOSITION-SELECTIVE ETCH-DEPOSITION PROCESS FOR DIELECTRIC FILM GAPFILL 失效
标题翻译：用于电介质膜的沉积选择性蚀刻沉积工艺
公开(公告)号：US20060228886A1
公开(公告)日：2006-10-12
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh Pham , Farhad Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

3. 发明授权

US07799698B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07799698B2
公开(公告)日：2010-09-21
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01I21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

4. 发明授权

US07691753B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
公开(公告)号：US07691753B2
公开(公告)日：2010-04-06
申请号：US11422150
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.

5. 发明授权

US07081414B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07081414B2
公开(公告)日：2006-07-25
申请号：US10445240
申请日：2003-05-23
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N Pham , Farhad K Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N Pham , Farhad K Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01L21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

6. 发明授权

US06890597B2 HDP-CVD uniformity control 失效
标题翻译： HDP-CVD均匀性控制
公开(公告)号：US06890597B2
公开(公告)日：2005-05-10
申请号：US10435296
申请日：2003-05-09
申请人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
发明人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
IPC分类号： C23C16/44 , C23C16/455 , C23C16/56 , C23C16/40
CPC分类号： C23C16/45502 , C23C16/45591 , C23C16/56
摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.
摘要翻译：沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。通过在衬底上变化的工艺来进行沉积和抛光。不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

7. 发明授权

US06908862B2 HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features 失效
标题翻译： HDP-CVD去/蚀刻/去除工艺，用于将沉积改进为高纵横比特征
公开(公告)号：US06908862B2
公开(公告)日：2005-06-21
申请号：US10138189
申请日：2002-05-03
申请人： Dongqing Li , Xiaolin C. Chen , Lin Zhang
发明人： Dongqing Li , Xiaolin C. Chen , Lin Zhang
IPC分类号： C23C16/04 , C23C16/44 , C23C16/455 , C23C16/56 , H01L21/311 , H01L21/316
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/45523 , C23C16/56 , H01L21/02211 , H01L21/02274 , H01L21/31116 , H01L21/31612 , Y10S438/978
摘要： A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.
摘要翻译：一种在设置在基板处理室中的基板上沉积膜的方法。该方法包括通过从流入处理室的第一气态混合物形成高密度等离子体沉积薄膜的第一部分。然后停止沉积过程，并通过使卤素蚀刻剂流入处理室来蚀刻膜的部分沉积的第一部分。接下来，通过使钝化气体流入处理室来钝化蚀刻膜的表面，然后通过从流入处理室的第二气态混合物形成高密度等离子体，将薄膜的第二部分沉积在第一部分上。在一个实施方案中，钝化气体由不含惰性气体的氧源组成。

8. 发明授权

US06468927B1 Method of depositing a nitrogen-doped FSG layer 失效
标题翻译：沉积氮掺杂FSG层的方法
公开(公告)号：US06468927B1
公开(公告)日：2002-10-22
申请号：US09574271
申请日：2000-05-19
申请人： Lin Zhang , Wen Ma , Zhuang Li
发明人： Lin Zhang , Wen Ma , Zhuang Li
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/02304 , H01L21/3143 , H01L21/31629 , Y10S438/958
摘要： Gap-fill and damascene methods are disclosed for depositing an insulating thin film of nitrofluorinated silicate glass on a substrate in a process chamber. A high-density plasma, generated from a gaseous mixture of silicon-, fluorine-, oxygen-, and nitrogen-containing gases, deposits a layer of nitrofluorinated silicate glass onto the substrate. For gap-fill applications, the substrate is biased with a bias power density between 4.8 and 11.2 W/cm2 and the ratio of flow rate for the oxygen-containing gas to the combined flow rate for all silicon-containing gases in the process chamber is between 1.0 and 1.8, preferably between 1.2 and 1.4. For damascene applications, the bias power density is less than 3.2 W/cm2, preferably 1.6 W/cm2, and the flow rate ratio is between 1.2 and 3.0. Using optimized parameters, the thin film has a lower dielectric constant and better adhesion properties than fluorosilicate glass.
摘要翻译：公开了间隙填充和镶嵌方法，用于在处理室中的基底上沉积硝基氟化硅酸盐玻璃的绝缘薄膜。由硅，氟，氧和含氮气体的气体混合物产生的高密度等离子体将一层硝基氟化硅酸盐玻璃沉积在基底上。对于间隙填充应用，衬底偏置功率密度在4.8和11.2W / cm2之间，并且含氧气体的流速与处理室中所有含硅气体的组合流速之比为在1.0和1.8之间，优选在1.2和1.4之间。对于镶嵌应用，偏压功率密度小于3.2W / cm2，优选1.6W / cm 2，流速比在1.2和3.0之间。使用优化的参数，薄膜具有比氟硅酸盐玻璃更低的介电常数和更好的粘合性能。

9. 发明申请

US20130186464A1 BUFFER LAYER FOR IMPROVING THE PERFORMANCE AND STABILITY OF SURFACE PASSIVATION OF SILICON SOLAR CELLS 审中-公开
标题翻译：用于改善硅太阳能电池表面钝化性能和稳定性的缓冲层
公开(公告)号：US20130186464A1
公开(公告)日：2013-07-25
申请号：US13733825
申请日：2013-01-03
申请人： Shuran Sheng , Lin Zhang
发明人： Shuran Sheng , Lin Zhang
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/02168 , H01L31/068 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally relate to the fabrication of solar cells and more specifically to a buffer layer for improving the performance and stability of surface passivation of Si solar cells. Generally, a passivation layer stack containing a buffer layer (interlayer) is formed on a surface of the silicon-based substrate. In one embodiment, the passivation layer stack may be formed on the back surface of the substrate. In another embodiment, the passivation layer stack is formed on the back surface of the substrate and a front emitter region (light receiving surface) of the substrate.
摘要翻译：本发明的实施方案一般涉及太阳能电池的制造，更具体地涉及用于提高Si太阳能电池的表面钝化的性能和稳定性的缓冲层。通常，在硅基基板的表面上形成包含缓冲层（中间层）的钝化层堆叠。在一个实施例中，钝化层堆叠可以形成在衬底的背面上。在另一个实施例中，钝化层堆叠形成在衬底的背面和衬底的前发射极区（光接收表面）上。

10. 发明授权

US08334228B2 Fiberglass compositions 有权
标题翻译：玻璃纤维组合物
公开(公告)号：US08334228B2
公开(公告)日：2012-12-18
申请号：US12637737
申请日：2009-12-14
申请人： Yuqiang Zhang , Guorong Cao , Bing Zhang , Lin Zhang , Wenzhong Xing , Guijiang Gu
发明人： Yuqiang Zhang , Guorong Cao , Bing Zhang , Lin Zhang , Wenzhong Xing , Guijiang Gu
IPC分类号： C03C13/02 , C03C13/06
CPC分类号： C03C13/00
摘要： This invention involves a fiberglass composition containing the following components: SiO2, Al2O3, CaO, MgO, B2O3, F2, TiO2, K2O, Na2O, Fe2O3 and SO3. The weight percentage of each of the components are as follows: SiO2 58˜65%, CaO 20˜26%, Al2O3 9˜17%, MgO 0.5˜1%, B2O3 0˜5%, F2 0˜1%, TiO2 0.1˜1%, K2O+Na2O 0˜0.8%, Fe2O3 0.1˜0.5%, SO3 0˜0.6%. The ternary system, SiO2—Al2O3—CaO, is basis of the fiberglass composition in this invention, which also has low quantities of MgO and B2O3. In addition, the total amount of alkaline earth oxide and the proportional relationship between MgO and CaO are rationally designed, which helps to improve the mechanical strength, heat resistance, and chemical stability of the glass. It also has excellent manufacturing performance. Moreover, the raw materials of the fiberglass composition in this invention are low in cost, and the invention meets environmental protection requirements.
摘要翻译：本发明涉及含有以下组分的玻璃纤维组合物：SiO2，Al2O3，CaO，MgO，B2O3，F2，TiO2，K2O，Na2O，Fe2O3和SO3。每种组分的重量百分比如下：SiO 2 58〜65％，CaO 20〜26％，Al 2 O 3 9〜17％，MgO 0.5〜1％，B 2 O 3〜5％，F2 0〜1％，TiO 2 0.1 〜1％，K2O + Na2O 0〜0.8％，Fe2O3 0.1〜0.5％，SO3 0〜0.6％。三元体系SiO2-Al2O3-CaO是本发明玻璃纤维组合物的基础，它也具有低量的MgO和B2O3。此外，合理设计碱土金属的总量和MgO与CaO的比例关系，有利于提高玻璃的机械强度，耐热性和化学稳定性。它也具有优良的制造性能。此外，本发明的玻璃纤维组合物的原料成本低，本发明符合环保要求。

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