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    • 4. 发明申请
    • DOPED SEMICONDUCTOR NANOCRYSTALS AND METHODS OF MAKING SAME
    • US20090302304A1
    • 2009-12-10
    • US12365737
    • 2009-02-04
    • Xiaogang PengNarayan Pradhan
    • Xiaogang PengNarayan Pradhan
    • H01L29/66
    • C09K11/02C09K11/574C09K11/584C09K11/883Y10T428/2991Y10T428/2993Y10T428/2995
    • A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.
    • 一种合成掺杂半导体纳米晶体的方法。 在一个实施方案中,该方法包括将金属氧化物或金属盐前体,配体和溶剂组合以在反应容器中形成金属络合物的步骤; 在第一温度T1下将阴离子前体与所述金属络合物混合,所述第一温度T1足以形成多个主体纳米晶体; 在第二温度T2下在多个主体纳米晶体上掺杂金属掺杂剂,使得金属掺杂剂的层基本上形成在接收金属掺杂剂的主体纳米晶体的表面上; 并在第三温度T3下将具有阴离子前体和金属氧化物或金属盐前体的混合物加入到反应容器中,以允许主体纳米晶体在金属掺杂剂的表面上的再生长基本上形成在 主体纳米晶体,其接收金属掺杂剂以形成多个掺杂的纳米晶体,其中所述掺杂的纳米晶体显示出半导体的特性。
    • 9. 发明授权
    • Doped semiconductor nanocrystals and methods of making same
    • 掺杂半导体纳米晶体及其制备方法
    • US07632428B2
    • 2009-12-15
    • US11410663
    • 2006-04-25
    • Xiaogang PengNarayan Pradhan
    • Xiaogang PengNarayan Pradhan
    • H01B1/06B05D5/12
    • C09K11/02C09K11/574C09K11/584C09K11/883Y10T428/2991Y10T428/2993Y10T428/2995
    • A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.
    • 一种合成掺杂半导体纳米晶体的方法。 在一个实施方案中,该方法包括将金属氧化物或金属盐前体,配体和溶剂组合以在反应容器中形成金属络合物的步骤; 在第一温度T1下将阴离子前体与所述金属络合物混合,所述第一温度T1足以形成多个主体纳米晶体; 在第二温度T2下在多个主体纳米晶体上掺杂金属掺杂剂,使得金属掺杂剂的层基本上形成在接收金属掺杂剂的主体纳米晶体的表面上; 并在第三温度T3下将具有阴离子前体和金属氧化物或金属盐前体的混合物加入到反应容器中,以允许主体纳米晶体在金属掺杂剂的表面上的再生长基本上形成在 主体纳米晶体,其接收金属掺杂剂以形成多个掺杂的纳米晶体,其中所述掺杂的纳米晶体显示出半导体的特性。