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1. 发明申请

US20100136226A1 Methods of Forming Carbon Nanotubes 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US20100136226A1
公开(公告)日：2010-06-03
申请号：US12625896
申请日：2009-11-25
申请人： Xiaofeng Wang , Hong-Sik Yoon , In-Seok Yeo
发明人： Xiaofeng Wang , Hong-Sik Yoon , In-Seok Yeo
IPC分类号： B05D5/12
CPC分类号： C23C16/0281 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C23C16/26 , H01L51/0002 , H01L51/0048
摘要： Methods of forming carbon nanotubes include forming a catalytic metal layer on a sidewall of an electrically conductive region, such as a metal or metal nitride pattern. A plurality of carbon nanotubes are grown from the catalytic metal layer. These carbon nanotubes can be grown from a sidewall of the catalytic metal layer. The plurality of carbon nanotubes are then exposed to an organic solvent. This step of exposing the carbon nanotubes to the organic solvent may be preceded by a step of applying centrifugal forces to the plurality of carbon nanotubes. Alternatively, the exposing step may include applying a centrifugal force to the plurality of carbon nanotubes while simultaneously exposing the plurality of carbon nanotubes to an organic solvent.
摘要翻译：形成碳纳米管的方法包括在诸如金属或金属氮化物图案的导电区域的侧壁上形成催化金属层。从催化金属层生长多个碳纳米管。这些碳纳米管可以从催化金属层的侧壁生长。然后将多个碳纳米管暴露于有机溶剂。之前将碳纳米管暴露于有机溶剂的步骤之前可以将离心力施加到多个碳纳米管。或者，曝光步骤可以包括向多个碳纳米管施加离心力，同时将多个碳纳米管暴露于有机溶剂。

2. 发明申请

US20060249770A1 Single Transistor Floating-Body DRAM Devices Having Vertical Channel Transistor Structures and Methods of Fabricating the Same 失效
标题翻译：具有垂直沟道晶体管结构的单晶体管浮动体DRAM器件及其制造方法
公开(公告)号：US20060249770A1
公开(公告)日：2006-11-09
申请号：US11380946
申请日：2006-05-01
申请人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
发明人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
IPC分类号： H01L21/8242
CPC分类号： H01L27/108 , H01L21/84 , H01L27/10802 , H01L27/1203 , H01L29/7841
摘要： Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.
摘要翻译：单晶体体浮体DRAM器件具有垂直沟道晶体管结构。 DRAM器件包括衬底，以及设置在衬底上并彼此隔离的第一和第二浮体。源极区域和漏极区域设置在第一和第二浮体的每一个之下和之上。栅电极设置在第一和第二浮体之间。还提供了制造单晶体管浮体DRAM器件的方法。

3. 发明授权

US07368788B2 SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions 失效
标题翻译：具有反相器和存取晶体管的SRAM单元具有垂直鳍状有源区
公开(公告)号：US07368788B2
公开(公告)日：2008-05-06
申请号：US11375617
申请日：2006-03-14
申请人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
发明人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L29/785
摘要： Complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) cells include at least a first inverter formed in a fin-shaped pattern of stacked semiconductor regions of opposite conductivity type. In some of these embodiments, the first inverter includes a first conductivity type (e.g., P-type or N-type) MOS load transistor electrically coupled in series with a second conductivity type (e.g., N-type of P-type) MOS driver transistor. The first inverter is arranged so that active regions of the first conductivity type MOS load transistor and the second conductivity type driver transistor are vertically stacked relative to each other within a first portion of a vertical dual-conductivity semiconductor fin structure. This fin structure is surrounded on at least three sides by a wraparound gate electrode, which is configured to modulate conductivity of both the active regions in response to a gate signal.
摘要翻译：互补金属氧化物半导体（CMOS）静态随机存取存储器（SRAM）单元包括形成为具有相反导电类型的堆叠半导体区域的鳍状图案的至少第一反相器。在这些实施例的一些中，第一反相器包括与第二导电类型（例如，N型P型）MOS驱动器串联电耦合的第一导电类型（例如，P型或N型）MOS负载晶体管晶体管。第一反相器被布置成使得第一导电类型MOS负载晶体管和第二导电类型驱动晶体管的有源区在垂直双电导率半导体鳍结构的第一部分内相对于彼此垂直堆叠。这种翅片结构在至少三面被环绕的栅电极包围，该环形栅电极被配置成响应于栅极信号调制两个有源区的电导率。

4. 发明申请

US20060220134A1 CMOS SRAM cells employing multiple-gate transistors and methods fabricating the same 失效
标题翻译：采用多栅极晶体管的CMOS SRAM单元及其制造方法
公开(公告)号：US20060220134A1
公开(公告)日：2006-10-05
申请号：US11375617
申请日：2006-03-14
申请人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
发明人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
IPC分类号： H01L27/12
CPC分类号： H01L27/1203 , H01L21/84 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L29/785
摘要： Complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) cells include at least a first inverter formed in a fin-shaped pattern of stacked semiconductor regions of opposite conductivity type. In some of these embodiments, the first inverter includes a first conductivity type (e.g., P-type or N-type) MOS load transistor electrically coupled in series with a second conductivity type (e.g., N-type of P-type) MOS driver transistor. The first inverter is arranged so that active regions of the first conductivity type MOS load transistor and the second conductivity type driver transistor are vertically stacked relative to each other within a first portion of a vertical dual-conductivity semiconductor fin structure. This fin structure is surrounded on at least three sides by a wraparound gate electrode, which is configured to modulate conductivity of both the active regions in response to a gate signal.
摘要翻译：互补金属氧化物半导体（CMOS）静态随机存取存储器（SRAM）单元包括形成为具有相反导电类型的堆叠半导体区域的鳍状图案的至少第一反相器。在这些实施例的一些中，第一反相器包括与第二导电类型（例如，N型P型）MOS驱动器串联电耦合的第一导电类型（例如，P型或N型）MOS负载晶体管晶体管。第一反相器被布置成使得第一导电类型MOS负载晶体管和第二导电类型驱动晶体管的有源区在垂直双电导率半导体鳍结构的第一部分内相对于彼此垂直堆叠。这种翅片结构在至少三面被环绕的栅电极包围，该环形栅电极被配置成响应于栅极信号调制两个有源区的电导率。

5. 发明授权

US08535753B2 Methods of forming carbon nanotubes 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US08535753B2
公开(公告)日：2013-09-17
申请号：US12625896
申请日：2009-11-25
申请人： Xianfeng Wang , Hong-Sik Yoon , In-Seok Yeo
发明人： Xianfeng Wang , Hong-Sik Yoon , In-Seok Yeo
IPC分类号： B82Y40/00
CPC分类号： C23C16/0281 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C23C16/26 , H01L51/0002 , H01L51/0048
摘要： Methods of forming carbon nanotubes include forming a catalytic metal layer on a sidewall of an electrically conductive region, such as a metal or metal nitride pattern. A plurality of carbon nanotubes are grown from the catalytic metal layer. These carbon nanotubes can be grown from a sidewall of the catalytic metal layer. The plurality of carbon nanotubes are then exposed to an organic solvent. This step of exposing the carbon nanotubes to the organic solvent may be preceded by a step of applying centrifugal forces to the plurality of carbon nanotubes. Alternatively, the exposing step may include applying a centrifugal force to the plurality of carbon nanotubes while simultaneously exposing the plurality of carbon nanotubes to an organic solvent.
摘要翻译：形成碳纳米管的方法包括在诸如金属或金属氮化物图案的导电区域的侧壁上形成催化金属层。从催化金属层生长多个碳纳米管。这些碳纳米管可以从催化金属层的侧壁生长。然后将多个碳纳米管暴露于有机溶剂。之前将碳纳米管暴露于有机溶剂的步骤之前可以将离心力施加到多个碳纳米管。或者，曝光步骤可以包括向多个碳纳米管施加离心力，同时将多个碳纳米管暴露于有机溶剂。

6. 发明授权

US08405137B2 Single transistor floating-body DRAM devices having vertical channel transistor structures 失效
标题翻译：具有垂直沟道晶体管结构的单晶体管浮体DRAM器件
公开(公告)号：US08405137B2
公开(公告)日：2013-03-26
申请号：US13301254
申请日：2011-11-21
申请人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
发明人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
IPC分类号： H01L29/788
CPC分类号： H01L27/108 , H01L21/84 , H01L27/10802 , H01L27/1203 , H01L29/7841
摘要： Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.
摘要翻译：单晶体体浮体DRAM器件具有垂直沟道晶体管结构。 DRAM器件包括衬底，以及设置在衬底上并彼此隔离的第一和第二浮体。源极区域和漏极区域设置在第一和第二浮体的每一个之下和之上。栅电极设置在第一和第二浮体之间。还提供了制造单晶体管浮体DRAM器件的方法。

7. 发明授权

US07795659B2 DRAM device and method of manufacturing the same 失效
标题翻译： DRAM装置及其制造方法
公开(公告)号：US07795659B2
公开(公告)日：2010-09-14
申请号：US12149406
申请日：2008-05-01
申请人： Hong-Sik Yoon , In-Seok Yeo , Seung-Jae Baik , Zong-Liang Huo , Shi-Eun Kim
发明人： Hong-Sik Yoon , In-Seok Yeo , Seung-Jae Baik , Zong-Liang Huo , Shi-Eun Kim
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10873 , H01L27/10829
摘要： In a DRAM device and a method of manufacturing the same, a multiple tunnel junction (MTJ) structure is provided, which includes conductive patterns and nonconductive patterns alternately stacked on each other. The nonconductive patterns have a band gap larger than a band gap of the conductive patterns. A gate insulation layer and a gate electrode are formed on a sidewall of the MTJ structure. A word line is connected with the MTJ structure, and a bit line is connected with one of top and bottom surfaces of the MTJ structure. A capacitor is connected with one of top and bottom surfaces of the MTJ structure that is not connected with the bit line. Current leakage in the DRAM device is reduced and a unit cells may be vertically stacked on the substrate, so a smaller surface area of the substrate is required for the DRAM device.
摘要翻译：在DRAM器件及其制造方法中，提供了多隧道结（MTJ）结构，其包括彼此交替堆叠的导电图案和非导电图案。非导电图案具有比导电图案的带隙大的带隙。在MTJ结构的侧壁上形成栅极绝缘层和栅电极。字线与MTJ结构连接，位线与MTJ结构的顶面和底面之一连接。电容器与MTJ结构的一个顶表面和底表面连接，不与位线连接。 DRAM器件中的电流泄漏减少，并且单元电池可以垂直地堆叠在衬底上，因此DRAM器件需要较小的衬底表面积。

8. 发明申请

US20080128802A1 SINGLE TRANSISTOR FLOATING BODY DRAM CELL HAVING RECESS CHANNEL TRANSISTOR STRUCTURE 审中-公开
标题翻译：具有输入通道晶体管结构的单晶片浮动体
公开(公告)号：US20080128802A1
公开(公告)日：2008-06-05
申请号：US12013547
申请日：2008-01-14
申请人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
发明人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
IPC分类号： H01L29/786
CPC分类号： H01L27/108 , H01L27/10802 , H01L29/7841 , H01L29/78648
摘要： Single transistor floating body dynamic random access memory (DRAM) cells include a semiconductor substrate and a barrier layer on the semiconductor substrate and a recess channel transistor on the barrier layer. The recess channel transistor includes a source region of a first conductivity type, a drain region of the first conductivity type spaced apart from the source region and a floating body of a second conductivity type between the barrier layer and the source region and the drain region. The floating body includes a recess region between the source region and the drain region.
摘要翻译：单晶体管浮体动态随机存取存储器（DRAM）单元包括半导体衬底和半导体衬底上的阻挡层以及阻挡层上的凹槽通道晶体管。凹槽沟道晶体管包括第一导电类型的源极区域，与源极区域隔开的第一导电类型的漏极区域和在阻挡层与源极区域和漏极区域之间的第二导电类型的浮动体。浮体包括在源极区域和漏极区域之间的凹陷区域。

9. 发明申请

US20120061752A1 SINGLE TRANSISTOR FLOATING-BODY DRAM DEVICES HAVING VERTICAL CHANNEL TRANSISTOR STRUCTURES 失效
标题翻译：具有垂直通道晶体管结构的单晶体浮体体DRAM器件
公开(公告)号：US20120061752A1
公开(公告)日：2012-03-15
申请号：US13301254
申请日：2011-11-21
申请人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
发明人： Zong-Liang Huo , Seung-Jae Baik , In-Seok Yeo , Hong-Sik Yoon , Shi-Eun Kim
IPC分类号： H01L29/78
CPC分类号： H01L27/108 , H01L21/84 , H01L27/10802 , H01L27/1203 , H01L29/7841
摘要： Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.
摘要翻译：单晶体体浮体DRAM器件具有垂直沟道晶体管结构。 DRAM器件包括衬底，以及设置在衬底上并彼此隔离的第一和第二浮体。源极区域和漏极区域设置在第一和第二浮体的每一个之下和之上。栅电极设置在第一和第二浮体之间。还提供了制造单晶体管浮体DRAM器件的方法。

10. 发明授权

US07535778B2 Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the same 有权
标题翻译：具有存储单元的半导体存储器件，每个都具有除存储器层之外的位对位层及其驱动方法
公开(公告)号：US07535778B2
公开(公告)日：2009-05-19
申请号：US11365585
申请日：2006-03-02
申请人： Hong-Sik Yoon , In-Seok Yeo
发明人： Hong-Sik Yoon , In-Seok Yeo
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C29/816 , G11C29/88 , G11C2213/77 , Y10S977/712
摘要： The semiconductor memory device includes a memory layer having a plurality of memory cells for storing data, and at least one bit registering layer for recording status information on whether the memory cells are defective. The memory layer may be a nanometer-scale memory device, such as a molecular memory, a carbon nanotube memory, an atomic memory, a single electron memory, or a memory fabricated by a chemical bottom-up method, etc.
摘要翻译：半导体存储器件包括具有用于存储数据的多个存储器单元的存储器层以及用于记录关于存储器单元是否有缺陷的状态信息的至少一个位寄存层。存储层可以是纳米级存储器件，例如分子存储器，碳纳米管存储器，原子存储器，单电子存储器或通过化学自下而上法制造的存储器等。

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