专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08645876B2 Methodology for performing post layer generation check 有权
标题翻译：执行后期生成检查的方法
公开(公告)号：US08645876B2
公开(公告)日：2014-02-04
申请号：US13234117
申请日：2011-09-15
申请人： Wye Boon Loh , Jeoung Mo Koo , Paul Kim Cheong Soh , Beng Lye Oh , Purakh Raj Verma
发明人： Wye Boon Loh , Jeoung Mo Koo , Paul Kim Cheong Soh , Beng Lye Oh , Purakh Raj Verma
IPC分类号： G06F17/50
CPC分类号： G06F17/5081
摘要： There is provided a method comprising receiving data corresponding to a layout design for a plurality of input mask layers and generating a layout design for at least one generated mask layer. The relationship between a first geometric element in a first layout pattern comprising one or more of the generated mask layers and a second geometric element in a second layout pattern is then determined and verified to check if they comply with predetermined rules. If the relationship does not conform with the predetermined rules the design of at least one of the generated mask layers associated with the first or second layout pattern is modified.
摘要翻译：提供了一种方法，包括接收对应于多个输入掩模层的布局设计的数据，并且生成用于至少一个生成的掩模层的布局设计。然后确定并验证包括生成的掩模层中的一个或多个的第一布局图案中的第一几何元素与第二布局图案中的第二几何元素之间的关系，以检查它们是否符合预定规则。如果关系不符合预定规则，则修改与第一或第二布局图案相关联的所生成的掩模层中的至少一个的设计。

2. 发明授权

US08410553B2 Semiconductor structure including high voltage device 有权
标题翻译：半导体结构包括高压器件
公开(公告)号：US08410553B2
公开(公告)日：2013-04-02
申请号：US12964753
申请日：2010-12-10
申请人： Jeoung Mo Koo , Purakh Raj Verma , Sanford Chu , Chunlin Zhu , Yisuo Li
发明人： Jeoung Mo Koo , Purakh Raj Verma , Sanford Chu , Chunlin Zhu , Yisuo Li
IPC分类号： H01L29/78
CPC分类号： H01L29/0847 , H01L29/0653 , H01L29/105 , H01L29/66568 , H01L29/7833
摘要： A high voltage device includes a substrate with a device region defined thereon. A gate stack is disposed on the substrate in the device region. A channel region is located in the substrate beneath the gate stack, while a first diffusion region is located in the substrate on a first side of the gate stack. A first isolation structure in the substrate, located on the first side of the gate stack, separates the channel and the first diffusion region. The high voltage device also includes a first drift region in the substrate coupling the channel to the first diffusion region, wherein the first drift region comprises a non-uniform depth profile conforming to a profile of the first isolation structure.
摘要翻译：高压器件包括其上限定有器件区域的衬底。栅极堆叠设置在器件区域中的衬底上。沟道区域位于栅堆叠下方的衬底中，而第一扩散区位于栅层叠的第一侧上的衬底中。位于栅极堆叠的第一侧的衬底中的第一隔离结构分离通道和第一扩散区域。高电压装置还包括在衬底中的第一漂移区域，其将沟道耦合到第一扩散区域，其中第一漂移区域包括符合第一隔离结构的轮廓的不均匀的深度分布。

3. 发明授权

US09111992B2 Semiconductor device including an n-well structure 有权
标题翻译：包括n阱结构的半导体器件
公开(公告)号：US09111992B2
公开(公告)日：2015-08-18
申请号：US13231934
申请日：2011-09-13
申请人： Jeoung Mo Koo , Purakh Raj Verma , Guowei Zhang
发明人： Jeoung Mo Koo , Purakh Raj Verma , Guowei Zhang
IPC分类号： H01L29/72 , H01L21/762 , H01L29/78 , H01L29/10 , H01L21/265 , H01L29/06 , H01L21/8238
CPC分类号： H01L29/7816 , H01L21/26513 , H01L21/76224 , H01L21/823892 , H01L29/0653 , H01L29/10 , H01L29/1079 , H01L29/1083 , H01L29/1087 , H01L29/1095 , H01L29/7835
摘要： A device comprising a p-type base region, and a p-type region formed over the p-type base region and in contact with the p-type base region is disclosed. The device also includes an n-well region surrounded by the p-type region, wherein the n-well is formed from an n-type epitaxial layer and the p-type region is formed by counter-doping the same n-type epitaxial layer.
摘要翻译：公开了一种包括p型基极区域和形成在p型基极区域上并与p型基极区域接触的p型区域的器件。该器件还包括被p型区域围绕的n阱区域，其中n阱由n型外延层形成，并且p型区域通过将相同的n型外延层。

4. 发明申请

US20130062691A1 SEMICONDUCTOR DEVICE INCLUDING AN N-WELL STRUCTURE 有权
公开(公告)号：US20130062691A1
公开(公告)日：2013-03-14
申请号：US13231934
申请日：2011-09-13
申请人： Jeoung Mo Koo , Purakh Raj Verma , Guowei Zhang
发明人： Jeoung Mo Koo , Purakh Raj Verma , Guowei Zhang
IPC分类号： H01L21/336 , H01L29/78 , H01L21/20
CPC分类号： H01L29/7816 , H01L21/26513 , H01L21/76224 , H01L21/823892 , H01L29/0653 , H01L29/10 , H01L29/1079 , H01L29/1083 , H01L29/1087 , H01L29/1095 , H01L29/7835
摘要： A device comprising a p-type base region, and a p-type region formed over the p-type base region and in contact with the p-type base region is disclosed. The device also includes an n-well region surrounded by the p-type region, wherein the n-well is formed from an n-type epitaxial layer and the p-type region is formed by counter-doping the same n-type epitaxial layer.

5. 发明授权

US07867862B2 Semiconductor structure including high voltage device 有权
标题翻译：半导体结构包括高压器件
公开(公告)号：US07867862B2
公开(公告)日：2011-01-11
申请号：US11855168
申请日：2007-09-14
申请人： Jeoung Mo Koo , Purakh Raj Verma , Sanford Chu , Chunlin Zhu , Yisuo Li
发明人： Jeoung Mo Koo , Purakh Raj Verma , Sanford Chu , Chunlin Zhu , Yisuo Li
IPC分类号： H01L21/335
CPC分类号： H01L29/0847 , H01L29/0653 , H01L29/105 , H01L29/66568 , H01L29/7833
摘要： A high voltage device includes a substrate with a device region defined thereon. A gate stack is disposed on the substrate in the device region. A channel region is located in the substrate beneath the gate stack, while a first diffusion region is located in the substrate on a first side of the gate stack. A first isolation structure in the substrate, located on the first side of the gate stack, separates the channel and the first diffusion region. The high voltage device also includes a first drift region in the substrate coupling the channel to the first diffusion region, wherein the first drift region comprises a non-uniform depth profile conforming to a profile of the first isolation structure.
摘要翻译：高压器件包括其上限定有器件区域的衬底。栅极堆叠设置在器件区域中的衬底上。沟道区域位于栅堆叠下方的衬底中，而第一扩散区位于栅层叠的第一侧上的衬底中。位于栅极堆叠的第一侧的衬底中的第一隔离结构分离通道和第一扩散区域。高电压装置还包括在衬底中的第一漂移区域，其将沟道耦合到第一扩散区域，其中第一漂移区域包括符合第一隔离结构的轮廓的不均匀的深度分布。

6. 发明授权

US08802484B1 Integration of germanium photo detector in CMOS processing 有权
标题翻译：锗光电检测器在CMOS处理中的集成
公开(公告)号：US08802484B1
公开(公告)日：2014-08-12
申请号：US13747009
申请日：2013-01-22
申请人： Purakh Raj Verma , Guowei Zhang , Kah Wee Ang
发明人： Purakh Raj Verma , Guowei Zhang , Kah Wee Ang
IPC分类号： H01L21/00 , H01L31/102
CPC分类号： H01L21/02532 , H01L21/84 , H01L27/0617 , H01L27/1203 , H01L31/028
摘要： A method and device are provided for forming an integrated Ge or Ge/Si photo detector in the CMOS process by non-selective epitaxial growth of the Ge or Ge/Si. Embodiments include forming an N-well in a Si substrate; forming a transistor or resistor in the Si substrate; forming an ILD over the Si substrate and the transistor or resistor; forming a Si-based dielectric layer on the ILD; forming a poly-Si or a-Si layer on the Si-based dielectric layer; forming a trench in the poly-Si or a-Si layer, the Si-based dielectric layer, the ILD, and the N-well; forming Ge or Ge/Si in the trench; and removing the Ge or Ge/Si, the poly-Si or a-Si layer, and the Si-based dielectric layer down to an upper surface of the ILD. Further aspects include forming an in-situ doped Si cap epilayer or an ex-situ doped poly-Si or a-Si cap layer on the Ge or Ge/Si.
摘要翻译：提供了一种通过Ge或Ge / Si的非选择性外延生长在CMOS工艺中形成集成的Ge或Ge / Si光电检测器的方法和装置。实施例包括在Si衬底中形成N阱; 在Si衬底中形成晶体管或电阻器; 在Si衬底和晶体管或电阻器上形成ILD; 在ILD上形成Si基电介质层; 在所述Si基电介质层上形成多晶硅或Si-Si层; 在多晶硅或a-Si层中形成沟槽，Si基介电层，ILD和N阱; 在沟槽中形成Ge或Ge / Si; 并且将Ge或Ge / Si，多晶硅或a-Si层以及Si基介电层除去到ILD的上表面。另外的方面包括在Ge或Ge / Si上形成原位掺杂的Si帽外延层或非原位掺杂的多晶Si或者a-Si覆盖层。

7. 发明授权

US08507983B2 High voltage device 有权
标题翻译：高压设备
公开(公告)号：US08507983B2
公开(公告)日：2013-08-13
申请号：US13550571
申请日：2012-07-16
申请人： Guowei Zhang , Purakh Raj Verma
发明人： Guowei Zhang , Purakh Raj Verma
IPC分类号： H01L29/76
CPC分类号： H01L29/0847 , H01L21/26586 , H01L21/823807 , H01L27/0922 , H01L29/0653 , H01L29/1045 , H01L29/66659 , H01L29/7835
摘要： A device is disclosed. The device includes s substrate prepared with an active device region. The active device region includes a gate. The device also includes a doped channel well disposed in the substrate adjacent to a first edge of the gate. The first edge of the gate overlaps the channel well with a channel edge of the channel well beneath the gate. The first edge of the gate and channel edge defines an effective channel length of the device. The effective channel length is self-aligned to the gate. A doped drift well adjacent to a second edge of the gate is also included.
摘要翻译：公开了一种设备。该器件包括用有源器件区域制备的衬底。有源器件区域包括栅极。该器件还包括在栅极的第一边缘附近设置在衬底中的掺杂沟道。栅极的第一边缘与沟道的沟道边缘很好地与沟道的沟道边缘重叠。栅极和沟道边缘的第一个边缘定义了器件的有效沟道长度。有效通道长度与栅极自对准。还包括与栅极的第二边缘相邻的掺杂漂移阱。

8. 发明授权

US08450832B2 Large tuning range junction varactor 有权
标题翻译：大调谐范围结变容二极管
公开(公告)号：US08450832B2
公开(公告)日：2013-05-28
申请号：US11696732
申请日：2007-04-05
申请人： Manju Sarkar , Purakh Raj Verma
发明人： Manju Sarkar , Purakh Raj Verma
IPC分类号： H01L29/93
CPC分类号： H01L27/0808 , H01L29/93
摘要： Large tuning range junction varactor includes first and second junction capacitors coupled in parallel between first and second varactor terminals. First and second plates of the capacitors are formed by three alternating doped regions in a substrate. The first and third doped regions are of the same type sandwiching the second doped region of the second type. A first input terminal is coupled to the first and third doped regions and a second terminal is coupled to the second doped region. At the interfaces of the doped regions are first and second depletion regions whose width can be varied by varying the voltage across the terminals from zero to full reverse bias.
摘要翻译：大型调谐范围结变容二极管包括并联在第一和第二变容二极管端子之间的第一和第二结电容器。电容器的第一和第二板由衬底中的三个交替掺杂区域形成。第一和第三掺杂区域具有夹着第二类型的第二掺杂区域的相同类型。第一输入端子耦合到第一和第三掺杂区域，第二端子耦合到第二掺杂区域。在掺杂区域的界面处是第一和第二耗尽区域，其宽度可以通过将端子间的电压从零改变为全反向偏压来改变。

9. 发明授权

US08222130B2 High voltage device 有权
标题翻译：高压设备
公开(公告)号：US08222130B2
公开(公告)日：2012-07-17
申请号：US12500620
申请日：2009-07-10
申请人： Guowei Zhang , Purakh Raj Verma
发明人： Guowei Zhang , Purakh Raj Verma
IPC分类号： H01L21/22
CPC分类号： H01L29/0847 , H01L21/26586 , H01L21/823807 , H01L27/0922 , H01L29/0653 , H01L29/1045 , H01L29/66659 , H01L29/7835
摘要： A method of forming a device is presented. The method includes providing a substrate prepared with an active device region. The active device region includes gate stack layers of a gate stack including at least a gate electrode layer over a gate dielectric layer. A first mask is provided on the substrate corresponding to the gate. The substrate is patterned to at least remove portions of a top gate stack layer unprotected by the first mask. A second mask is also provided on the substrate with an opening exposing a portion of the first mask and the top gate stack layer. A channel well is formed by implanting ions through the opening and gate stack layers into the substrate.
摘要翻译：提出了一种形成装置的方法。该方法包括提供用活性器件区域制备的衬底。有源器件区域包括至少包括栅极电介质层上的栅极电极层的栅极堆叠的栅极堆叠层。在对应于栅极的基板上设置第一掩模。将衬底图案化以至少去除未被第一掩模保护的顶部栅极堆叠层的部分。在基板上还设有第二掩模，该开口具有暴露第一掩模和顶栅层叠层的一部分的开口。通过将离子通过开口和栅极堆叠层注入衬底而形成通道阱。

10. 发明授权

US07488662B2 Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process 有权
标题翻译：用于高性能SiGe CBiCMOS工艺的自对准垂直PNP晶体管
公开(公告)号：US07488662B2
公开(公告)日：2009-02-10
申请号：US11302479
申请日：2005-12-13
申请人： Shaoqiang Zhang , Purakh Raj Verma , Sanford Chu
发明人： Shaoqiang Zhang , Purakh Raj Verma , Sanford Chu
IPC分类号： H01L21/331
CPC分类号： H01L21/82285 , H01L21/8249 , H01L27/0623 , H01L27/0826 , H01L29/7378
摘要： A structure and a process for a self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process. Embodiments include SiGe CBiCMOS with high-performance SiGe NPN transistors and PNP transistors. As the PNP transistors and NPN transistors contained different types of impurity profile, they need separate lithography and doping step for each transistor. The process is easy to integrate with existing CMOS process to save manufacturing time and cost. As plug-in module, fully integration with SiGe BiCMOS processes. High doping Polysilicon Emitter can increase hole injection efficiency from emitter to base, reduce emitter resistor, and form very shallow EB junction. Self-aligned N+ base implant can reduce base resistor and parasitical EB capacitor. Very low collector resistor benefits from BP layer. PNP transistor can be Isolated from other CMOS and NPN devices by BNwell, Nwell and BN+ junction.
摘要翻译：用于高性能SiGe CBiCMOS工艺的自对准垂直PNP晶体管的结构和工艺。实施例包括具有高性能SiGe NPN晶体管和PNP晶体管的SiGe CBiCMOS。由于PNP晶体管和NPN晶体管包含不同类型的杂质分布，因此每个晶体管需要单独的光刻和掺杂步骤。该过程易于与现有的CMOS工艺集成，以节省制造时间和成本。作为插件模块，与SiGe BiCMOS工艺完全集成。高掺杂多晶硅发射器可以增加从发射极到基极的空穴注入效率，减少发射极电阻，并形成非常浅的EB结。自对准N +基极植入可以减少基极电阻和寄生EB电容。极低的集电极电阻受益于BP层。 PNP晶体管可以通过BNwell，Nwell和BN +结与其他CMOS和NPN器件隔离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式