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1. 发明申请

US20080197017A1 Target/Backing Plate Constructions, and Methods of Forming Them 审中-公开
标题翻译：目标/背板结构及其形成方法
公开(公告)号：US20080197017A1
公开(公告)日：2008-08-21
申请号：US10556174
申请日：2004-08-10
申请人： Wuwen Yi , Ravi Rastogi , Jaeyoon Kim , Brett M. Clark
发明人： Wuwen Yi , Ravi Rastogi , Jaeyoon Kim , Brett M. Clark
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407
摘要： The Invention includes target/backing plate constructions and methods of forming target/backing plate constructions. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of aluminum, copper, tantalum and titanium. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
摘要翻译：本发明包括目标/背板结构以及形成靶/背板结构的方法。靶材和背板可以通过适当的中间层彼此粘结。靶可以包括铝，铜，钽和钛中的一种或多种。中间层可以包括银，铜，镍，锡，钛和铟中的一种或多种。本发明的靶/背板结构可以具有至少20ksi的键合强度和小于80微米的目标内的平均晶粒尺寸。

2. 发明申请

US20090078570A1 TARGET/BACKING PLATE CONSTRUCTIONS, AND METHODS OF FORMING TARGET/BACKING PLATE CONSTRUCTIONS 审中-公开
标题翻译：目标/背板结构及其形成目标/背板结构的方法
公开(公告)号：US20090078570A1
公开(公告)日：2009-03-26
申请号：US12259998
申请日：2008-10-28
申请人： Wuwen Yi , Ravi Rastogi , Jaeyeon Kim , Brett Clark , Susan D. Storhers , Michael Pinter , Janine K. Kardokus
发明人： Wuwen Yi , Ravi Rastogi , Jaeyeon Kim , Brett Clark , Susan D. Storhers , Michael Pinter , Janine K. Kardokus
IPC分类号： C23C14/34 , B23K1/20 , B23K28/00 , B23K20/08
CPC分类号： C23C14/3414 , H01J37/3426 , H01J37/3491
摘要： Target/backing plate constructions and methods of forming target/backing plate constructions are disclosed herein. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of titanium, tantalum, titanium zirconium, hafnium, niobium, vanadium, tungsten, copper or a combination thereof. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
摘要翻译：本文公开了靶/背板结构和形成靶/背板结构的方法。靶材和背板可以通过适当的中间层彼此粘结。靶可以包括钛，钽，钛锆，铪，铌，钒，钨，铜或其组合中的一种或多种。中间层可以包括银，铜，镍，锡，钛和铟中的一种或多种。本发明的靶/背板结构可以具有至少20ksi的键合强度和小于80微米的目标内的平均晶粒尺寸。

3. 发明授权

US5157668A Method and apparatus for locating faults in electronic units 失效
标题翻译：用于定位电子单位故障的方法和装置
公开(公告)号：US5157668A
公开(公告)日：1992-10-20
申请号：US375839
申请日：1989-07-05
申请人： Charles W. Buenzli, Jr. , Ravi Rastogi , Kenneth F. Sierzega , Maurice M. Tayeh
发明人： Charles W. Buenzli, Jr. , Ravi Rastogi , Kenneth F. Sierzega , Maurice M. Tayeh
IPC分类号： G01R31/28 , G06F11/25 , G06F17/50
CPC分类号： G06F11/2257 , G01R31/2846 , G06F17/5022
摘要： An artificial intelligence based method and apparatus for locating faults in electronic units includes a technique for modelling electronic units in terms of behavioral constraints. Behavioral constraints model circuit components in terms of changes in outputs thereof which result from changes in inputs thereto. These changes, referred to as "phase changes" may be supplemented by gain and compliance constraints to model an electronic unit at all functional abstraction or hierarchical decomposition levels thereof. In addition to providing a universal modelling scheme, behavioral constraint relationships provide a highly accurate indication of subtle changes in a circuit, for accurate fault location or troubleshooting.Troubleshooting takes place by applying a predetermined search strategy on the electronic unit which is represented by behavioral constraints. The search strategy begins with a top down search. When a faulty block is found, the search moves down one functional abstraction level and searches the next lower level block having an output corresponding to the output of the higher level block. If the next lower level block is not defective, adjacent blocks at the next lower level are searched.Testing of the electronic unit is begun according to the functional test plan specified for the unit. Each functional test in the functional test plan is associated with one or more blocks at a functional abstraction level. When a functional test fails, troubleshooting begins at the block and functional abstraction level corresponding to the failed functional test.
摘要翻译：用于定位电子单元中的故障的基于人工智能的方法和装置包括在行为约束方面对电子单元进行建模的技术。根据其输入变化而导致的输出变化的行为约束模型电路组件。被称为“相位变化”的这些变化可以通过增益和合规约束来补充，以在所有功能抽象或其分级分解级别对电子单元建模。除了提供通用建模方案之外，行为约束关系提供了电路中微妙变化的高精度指示，用于准确的故障定位或故障排除。通过在由行为约束表示的电子单元上应用预定的搜索策略来进行故障排除。搜索策略以自上而下的搜索开始。当找到有故障的块时，搜索向下移动一个功能抽象级别，并搜索具有对应于较高级别块的输出的输出的下一个较低级别块。如果下一个较低级别的块没有缺陷，则搜索下一个较低级别的相邻块。电子单元的测试根据本机规定的功能测试计划开始。功能测试计划中的每个功能测试与功能抽象级别的一个或多个块相关联。当功能测试失败时，故障排除从对应于故障功能测试的块和功能抽象级别开始。

4. 发明申请

US20080023665A1 Thermal interconnect and interface materials, methods of production and uses thereof 审中-公开
标题翻译：热互连和界面材料，生产方法及其用途
公开(公告)号：US20080023665A1
公开(公告)日：2008-01-31
申请号：US11493788
申请日：2006-07-25
申请人： Martin W. Weiser , Ravi Rastogi , Meghana Nerurkar , Devesh Mathur , Colin Xingcun Tong
发明人： Martin W. Weiser , Ravi Rastogi , Meghana Nerurkar , Devesh Mathur , Colin Xingcun Tong
IPC分类号： C09K5/00
CPC分类号： H01L23/3733 , H01L23/3737 , H01L2224/2929 , H01L2224/293 , H01L2224/29324 , H01L2224/29339 , H01L2224/29347 , H01L2224/29386 , H01L2224/29439 , H01L2224/29499 , H01L2924/01019 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/09701 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/3011 , H01L2924/00 , H01L2924/00014 , H01L2924/014
摘要： Components and materials, including thermal interface materials, described herein include at least one matrix component, at least one high conductivity component, and at least one solder material. In some embodiments, the at least one high conductivity component includes a filler component, a lattice component or a combination thereof. Methods are also described herein of producing a thermal interface material that include providing at least one matrix component, providing at least one high conductivity component, providing at least one solder material, and blending the at least one matrix component, the at least one high conductivity component and the at least one solder material.
摘要翻译：包括本文所述的热界面材料的组分和材料包括至少一种基质组分，至少一种高电导率组分和至少一种焊料材料。在一些实施方案中，至少一种高电导率组分包括填料组分，晶格组分或其组合。本文还描述了生产热界面材料的方法，其包括提供至少一种基质组分，提供至少一种高电导率组分，提供至少一种焊料材料，以及混合所述至少一种基质组分，所述至少一种高导电性组分和至少一种焊料材料。

5. 发明申请

US20070099332A1 Chalcogenide PVD components and methods of formation 审中-公开
标题翻译：硫族元素PVD组分和形成方法
公开(公告)号：US20070099332A1
公开(公告)日：2007-05-03
申请号：US11598177
申请日：2006-11-09
申请人： Janine Kardokus , Michael Pinter , Ravi Rastogi , Diana Morales , Michael Payton
发明人： Janine Kardokus , Michael Pinter , Ravi Rastogi , Diana Morales , Michael Payton
IPC分类号： H01L21/00
CPC分类号： C23C14/0623 , C23C14/3414 , H01L31/0322 , H01L45/06 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1625 , Y02E10/541 , Y02P70/521
摘要： A PVD component forming method includes identifying two or more solids having different compositions, homogeneously mixing particles of the solids using proportions which yield a bulk formula, consolidating the homogeneous particle mixture to obtain a rigid mass while applying pressure and using a temperature below the minimum temperature of melting or sublimation of the solids, and forming a PVD component including the mass. A chalcogenide PVD component includes a rigid mass containing a bonded homogeneous mixture of particles of two or more solids having different compositions, the mass having a microcomposite structure exhibiting a maximum feature size of 500 μm or less, and one or more of the solids containing a compound of two or more bulk formula elements. An alternative PVD component exhibits a uniform composition with less than 10% difference in atomic compositions from feature to feature.
摘要翻译： PVD组分形成方法包括鉴定具有不同组成的两种或更多种固体，使用产生本体配方的比例均匀混合固体颗粒，在施加压力并使用低于最低温度的温度下固化均匀的颗粒混合物以获得刚性质量的固体的熔融或升华，以及形成包括该物质的PVD组分。硫族化物PVD组分包括含有两种或更多种具有不同组成的固体的粘合的均匀混合物的刚性物质，所述物质具有显示最大特征尺寸为500μm或更小的微复合结构，以及一种或多种含有两种或多种主体配方元素的化合物。替代的PVD组分显示出从特征到特征的原子组成差异小于10％的均匀组成。

6. 发明申请

US20080112878A1 Alloy casting apparatuses and chalcogenide compound synthesis methods 审中-公开
标题翻译：合金铸造设备和硫族化合物合成方法
公开(公告)号：US20080112878A1
公开(公告)日：2008-05-15
申请号：US11598176
申请日：2006-11-09
申请人： Janine K. Kardokus , Michael R. Pinter , Ravi Rastogi , Diana L. Morales , Michael D. Bayton , Norman L. Sand , Bryan E. Powers
发明人： Janine K. Kardokus , Michael R. Pinter , Ravi Rastogi , Diana L. Morales , Michael D. Bayton , Norman L. Sand , Bryan E. Powers
IPC分类号： C01B19/04 , C01B19/00 , C01B17/00 , B22D46/00
CPC分类号： C01B19/007 , B22F9/04 , B22F9/08 , B22F2009/041 , B22F2999/00 , C01B19/002 , C01P2002/88 , C01P2004/03 , C22C1/0491 , C23C14/0623 , C23C14/3414 , F27B14/061 , F27D7/00 , Y02P10/253 , B22F2009/043 , B22F2009/049
摘要： A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.
摘要翻译：硫族化合物合成方法包括均匀混合固体颗粒，并且在混合过程中，向颗粒混合物赋予动能，加热颗粒混合物，使元素合金化，并形成含有该化合物的合金颗粒。另一种硫属化物化合物的合成方法包括在惰性气氛下，在加热容器中熔化颗粒混合物，从加热容器中除去熔体，将熔体置于淬火容器中，并使熔体固化。将固化的熔体还原成含有该化合物的合金颗粒。合金铸造设备包括外壳，加热容器，流量控制器，收集盘和主动冷却的淬火板。加热容器具有底部浇注孔和倾倒致动器。流量控制器从外壳外部操作倾倒致动器。淬火板位于收集盘的底部上方并在底部倾倒孔下方。

7. 发明申请

US20080026181A1 Synergistically-modified surfaces and surface profiles for use with thermal interconnect and interface materials, methods of production and uses thereof 审中-公开
标题翻译：用于热互连和界面材料的协同改性的表面和表面轮廓，生产方法及其用途
公开(公告)号：US20080026181A1
公开(公告)日：2008-01-31
申请号：US11493778
申请日：2006-07-25
申请人： Ravi Rastogi , Martin W. Weiser
发明人： Ravi Rastogi , Martin W. Weiser
IPC分类号： G11B5/64
CPC分类号： H01L21/4878 , H01L23/3735 , H01L23/3736 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , Y10T428/24355 , H01L2924/00
摘要： Synergistically-modified surfaces are described herein, where a surface having a surface profile is synergistically modified such that the thermal contact resistance between the surface and the at least one thermal interface material is reduced as compared to a surface that is not synergistically modified. Methods are also described herein of producing a synergistically-modified surface, comprising a) providing a surface having a surface profile, b) providing at least one thermal interface material, c) synergistically modifying the surface profile of the surface such that thermal contact resistance between the surface and the at least one thermal interface material is reduced as compared to a surface that is not synergistically modified. Layered components are also disclosed that comprise a synergistically-modified surface; a thermal interface material; and at least one additional layer of material.
摘要翻译：这里描述了协同改性的表面，其中具有表面轮廓的表面协同地被修改，使得与未协同改性的表面相比，表面和至少一种热界面材料之间的热接触电阻降低。本文还描述了产生协同改性表面的方法，其包括a）提供具有表面轮廓的表面，b）提供至少一种热界面材料，c）协同地改变表面的表面轮廓，使得与未协同改性的表面相比，表面和至少一种热界面材料减少。还公开了包含协同改性表面的分层组分; 热界面材料; 和至少一个附加的材料层。

8. 发明申请

US20080291634A1 THERMAL INTERCONNECT AND INTERFACE MATERIALS, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
标题翻译：热互连和界面材料，生产方法及其用途
公开(公告)号：US20080291634A1
公开(公告)日：2008-11-27
申请号：US12124998
申请日：2008-05-21
申请人： Martin W. Weiser , Kikue S. Burnham , De-Ling Zhou , Roger Y. Leung , Jan Nedbal , Ravi Rastogi
发明人： Martin W. Weiser , Kikue S. Burnham , De-Ling Zhou , Roger Y. Leung , Jan Nedbal , Ravi Rastogi
IPC分类号： H05K7/20
CPC分类号： C09K5/14 , H01L23/3737 , H01L23/42 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2924/09701 , H01L2924/12044 , H01L2924/3011 , H01L2924/0665 , H01L2924/00
摘要： Thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent improves the thermal performance, compatibility, physical quality or a combination thereof of the thermal interface material. Methods of forming thermal interface materials are also disclosed that include providing each of the at least one matrix material component, at least one high conductivity filler, at least one solder material and at least one material modification agent, blending the components; and optionally curing the components pre- or post-application of the thermal interface material to the surface, substrate or component. Also, thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent at least one modified thermal filler profile.
摘要翻译：公开了热界面材料，其包括至少一种基质材料组分，至少一种高电导率填料组分，至少一种焊料材料; 和至少一种材料改性剂，其中所述至少一种材料改性剂改善所述热界面材料的热性能，相容性，物理质量或其组合。还公开了形成热界面材料的方法，其包括提供至少一种基质材料组分，至少一种高电导率填料，至少一种焊料材料和至少一种材料改性剂中的每一种，混合组分; 并且可选地将热界面材料预施加或后施加到表面，基材或组分上固化。此外，公开了热界面材料，其包括至少一种基体材料组分，至少一种高电导率填料组分，至少一种焊料材料; 和至少一种材料改性剂，其中所述至少一种材料改性剂至少一种改性的热填料型材。

9. 发明申请

US20070007505A1 Chalcogenide PVD components 审中-公开
标题翻译：硫族化物PVD组分
公开(公告)号：US20070007505A1
公开(公告)日：2007-01-11
申请号：US11178202
申请日：2005-07-07
申请人： Ravi Rastogi , Janine Kardokus , Diana Morales
发明人： Ravi Rastogi , Janine Kardokus , Diana Morales
IPC分类号： H01L29/02
CPC分类号： C04B35/547 , C04B35/645 , C04B35/6455 , C04B2235/40 , C04B2235/408 , C04B2235/42 , C04B2235/77 , C23C14/3414
摘要： A chalcogenide PVD component includes a bonded mixture of particles of a first solid and a second solid. The first solid contains a first compound. The particle mixture may exhibit a minimum solid phase change temperature greater than a solid phase change phase temperature of an element in the first compound. The particle mixture may exhibit a maximum solid phase change temperature less than a solid phase change temperature of an element in the first compound. The first compound may be a congruently melting line compound. The bonded mixture may lack melt regions or sublimation gaps. The particle mixture may exhibit a bulk formula including three or more elements. The particle mixture may include two or more line compounds.
摘要翻译：硫族化物PVD组分包括第一固体和第二固体的颗粒的粘合混合物。第一固体含有第一种化合物。颗粒混合物可以表现出比第一化合物中元素的固相变温相的最小固相变温度。颗粒混合物可以表现出小于第一化合物中元素的固相变温度的最大固相变温度。第一种化合物可以是一致的熔融线化合物。粘结的混合物可能缺乏熔融区域或升华间隙。颗粒混合物可以显示包括三个或更多个元素的主体配方。颗粒混合物可以包括两种或更多种线型化合物。

10. 发明授权

US5145955A Process for the preparation and composition of a fraction containing picroside I and kutkoside 失效
$Process for the preparation and composition of a fraction containing picroside I and kutkoside$
标题翻译：制备和组成含有微血小板I和kutkoside的级分的方法
公开(公告)号：US5145955A
公开(公告)日：1992-09-08
申请号：US783410
申请日：1991-10-28
申请人： Bacchan S. Aswal , Ramesh Chander , Sunil K. Chatterji , Bhola N. Dhawan , Yogesh Dwivedi , Narendra K. Garg , Poonam Jain , Narinder K. Kapoor , Dinesh K. Kulshreshtha , Bishan N. Mehrotra , Gyanendra K. Patnaik , Ravi Rastogi , Jagat P. S. Sarin , Krishna C. Saxena , Shekhar C. Sharma , Shri K. Sharma , Binduja Shukla , Pradeep K. S. Visen
发明人： Bacchan S. Aswal , Ramesh Chander , Sunil K. Chatterji , Bhola N. Dhawan , Yogesh Dwivedi , Narendra K. Garg , Poonam Jain , Narinder K. Kapoor , Dinesh K. Kulshreshtha , Bishan N. Mehrotra , Gyanendra K. Patnaik , Ravi Rastogi , Jagat P. S. Sarin , Krishna C. Saxena , Shekhar C. Sharma , Shri K. Sharma , Binduja Shukla , Pradeep K. S. Visen
IPC分类号： A61K36/80 , C07H17/04
CPC分类号： C07H17/04 , A61K36/80 , Y10S514/893 , Y10S514/894
摘要： The present invention describes a process for the preparation of a fraction, mainly containing picroside I and kurrooa, from the plant Picrorhiza kurrooa.
摘要翻译：本发明描述了用于制备主要含有赤霉素（I）和赤藓红（Kurrooa）的级分的方法。

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