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    • 2. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08426299B2
    • 2013-04-23
    • US13337748
    • 2011-12-27
    • Joon-Sung KimHye-Soo ShinMi-Youn KimYoung-Soo Kim
    • Joon-Sung KimHye-Soo ShinMi-Youn KimYoung-Soo Kim
    • H01L21/4763
    • H01L21/0273H01L21/28282H01L21/31058H01L21/31144H01L21/32139H01L27/11575H01L27/11582
    • A method of fabricating a semiconductor device may include: alternatively stacking dielectric layers and conductive layers on a substrate to form a stack structure, forming a first photoresist pattern on the stack structure, forming a second photoresist pattern whose thickness is reduced as the second photoresist pattern extends from the center of the stack structure towards a periphery of the stacked structure by performing a heat treatment on the first photoresist pattern, etching the stack structure through the second photoresist pattern to form a slope profile on the stack structure whose thickness is reduced as the slope profile extends from the center of the stack structure towards a periphery of the stacked structure, and forming a step-type profile on the end part of the stack structure by selectively etching the dielectric layer.
    • 制造半导体器件的方法可以包括:交替地在衬底上堆叠电介质层和导电层以形成堆叠结构,在堆叠结构上形成第一光致抗蚀剂图案,形成厚度随着第二光致抗蚀剂图案而减小的第二光致抗蚀剂图案 通过对第一光致抗蚀剂图案进行热处理,从堆叠结构的中心向着堆叠结构的周边延伸,通过第二光致抗蚀剂图案蚀刻堆叠结构,以在堆叠结构上形成斜面,其厚度减小为 倾斜轮廓从堆叠结构的中心延伸到层叠结构的周边,并且通过选择性地蚀刻介电层而在堆叠结构的端部上形成阶梯型轮廓。
    • 7. 发明申请
    • Substrate having alignment marks and method of obtaining alignment information using the same
    • 具有对准标记的基板和使用其的获取对准信息的方法
    • US20070296935A1
    • 2007-12-27
    • US11723362
    • 2007-03-19
    • Joon-Sung KimJi-Yong You
    • Joon-Sung KimJi-Yong You
    • G03B27/52G01B11/00
    • G03F9/7084G03F9/7076G03F9/708
    • The alignment marks formed in a scribe line of a semiconductor substrate include at least one main mark, a first sub-mark and second sub-marks. The first sub-mark is formed at a central portion of the main mark. The second sub-marks are disposed symmetrically with respect to the first sub-mark and are used for detecting asymmetry of the main mark by measuring distances between respective side edges of the main mark and the first sub-mark, and by measuring respective side edges between the main mark and each of the second sub-marks. Alternatively, the alignment marks include main outer and inner marks and a sub-mark disposed in between the main outer and inner marks. In this case, the sub-mark is used for detecting asymmetry of the main mark by measuring distances between respective side edges of the main outer mark and the sub-mark, and by measuring respective side edges between the main inner mark and the sub-mark. Thus, accurate alignment information can be obtained regardless of whether the main mark was inadvertently formed as asymmetrical.
    • 形成在半导体衬底的划线中的对准标记包括至少一个主标记,第一子标记和第二子标记。 第一子标记形成在主标记的中心部分。 第二子标记相对于第一子标记对称设置,并且用于通过测量主标记的各个侧边缘与第一子标记之间的距离来检测主标记的不对称性,并且通过测量相应的侧边缘 主标记和每个第二个子标记之间。 或者,对准标记包括主外标和内标,以及设置在主外标和内标之间的子标记。 在这种情况下,子标记用于通过测量主外标号和子标记的各侧边缘之间的距离来检测主标记的不对称性,并且通过测量主内标和子标记之间的相应侧边缘, 标记。 因此,无论主标记是否被无意地形成为不对称,都可以获得准确的对准信息。