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    • 5. 发明申请
    • MICROELECTROMECHANICAL DEVICE WITH ISOLATED MICROSTRUCTURES AND METHOD OF PRODUCING SAME
    • 具有隔离微结构的微电子器件及其制造方法
    • US20100155861A1
    • 2010-06-24
    • US12340202
    • 2008-12-19
    • Lisa Z. ZhangLisa H. KarlinRuben B. MontezWoo Tae Park
    • Lisa Z. ZhangLisa H. KarlinRuben B. MontezWoo Tae Park
    • H01L29/84H01L21/762
    • B81C1/00698
    • A microelectromechanical systems (MEMS) device (20) includes a polysilicon structural layer (46) having movable microstructures (28) formed therein and suspended above a substrate (22). Isolation trenches (56) extend through the layer (46) such that the microstructures (28) are laterally anchored to the isolation trenches (56). A sacrificial layer (22) is formed overlying the substrate (22), and the structural layer (46) is formed overlying the sacrificial layer (22). The isolation trenches (56) are formed by etching through the polysilicon structural layer (46) and depositing a nitride (72), such as silicon-rich nitride, in the trenches (56). The microstructures (28) are then formed in the structural layer (46), and electrical connections (30) are formed over the isolation trenches (56). The sacrificial layer (22) is subsequently removed to form the MEMS device (20) having the isolated microstructures (28) spaced apart from the substrate (22).
    • 微机电系统(MEMS)装置(20)包括多晶硅结构层(46),该多晶硅结构层(46)具有形成在其中的悬浮在衬底(22)上方的可移动微结构(28)。 绝缘沟槽(56)延伸穿过层(46),使得微结构(28)横向锚定到隔离沟槽(56)。 形成覆盖衬底(22)的牺牲层(22),并且覆盖牺牲层(22)上形成结构层(46)。 隔离沟槽(56)通过蚀刻穿过多晶硅结构层(46)并在沟槽(56)中沉积诸如富含硅的氮化物的氮化物(72)形成。 然后在结构层(46)中形成微结构(28),并且在隔离沟槽(56)上形成电连接(30)。 随后去除牺牲层(22)以形成具有与衬底(22)间隔开的隔离微结构(28)的MEMS器件(20)。
    • 6. 发明授权
    • Method of producing microelectromechanical device with isolated microstructures
    • 具有隔离微结构的微机电装置的制造方法
    • US07943525B2
    • 2011-05-17
    • US12340202
    • 2008-12-19
    • Lisa Z. ZhangLisa H. KarlinRuben B. MontezWoo Tae Park
    • Lisa Z. ZhangLisa H. KarlinRuben B. MontezWoo Tae Park
    • H01L21/302
    • B81C1/00698
    • A microelectromechanical systems (MEMS) device (20) includes a polysilicon structural layer (46) having movable microstructures (28) formed therein and suspended above a substrate (22). Isolation trenches (56) extend through the layer (46) such that the microstructures (28) are laterally anchored to the isolation trenches (56). A sacrificial layer (22) is formed overlying the substrate (22), and the structural layer (46) is formed overlying the sacrificial layer (22). The isolation trenches (56) are formed by etching through the polysilicon structural layer (46) and depositing a nitride (72), such as silicon-rich nitride, in the trenches (56). The microstructures (28) are then formed in the structural layer (46), and electrical connections (30) are formed over the isolation trenches (56). The sacrificial layer (22) is subsequently removed to form the MEMS device (20) having the isolated microstructures (28) spaced apart from the substrate (22).
    • 微机电系统(MEMS)装置(20)包括多晶硅结构层(46),该多晶硅结构层(46)具有形成在其中的悬浮在衬底(22)上方的可移动微结构(28)。 绝缘沟槽(56)延伸穿过层(46),使得微结构(28)横向锚定到隔离沟槽(56)。 形成覆盖衬底(22)的牺牲层(22),并且覆盖牺牲层(22)上形成结构层(46)。 隔离沟槽(56)通过蚀刻穿过多晶硅结构层(46)并在沟槽(56)中沉积诸如富含硅的氮化物的氮化物(72)形成。 然后在结构层(46)中形成微结构(28),并且在隔离沟槽(56)上形成电连接(30)。 随后去除牺牲层(22)以形成具有与衬底(22)间隔开的隔离微结构(28)的MEMS器件(20)。