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1. 发明授权

US08222580B2 Cooking apparatus using microwaves 有权
标题翻译：使用微波炉的烹饪设备
公开(公告)号：US08222580B2
公开(公告)日：2012-07-17
申请号：US11979003
申请日：2007-10-30
申请人： Won Hui Lee , Hyun Jung Kim
发明人： Won Hui Lee , Hyun Jung Kim
IPC分类号： H05B6/72
CPC分类号： H05B6/72 , H05B6/74
摘要： A cooking apparatus which uses microwaves is provided having a microwave supplier which supplies microwaves into the cooking chamber. More particularly, the microwave supplier may be provided proximate an upper side of the cooking chamber; and a microwave radiator may be provided inside of the cooking chamber to re-radiate the microwaves.
摘要翻译：提供了一种使用微波的烹饪设备，其具有向烹饪室供应微波的微波供应器。更具体地，微波供应器可以设置在烹饪室的上侧附近; 并且可以在烹饪室内部设置微波辐射器，以重新辐射微波。

2. 发明申请

US20120088020A1 COOKING DEVICE WITH DEODORIZATION 审中-公开
标题翻译：具有除臭功能的烹饪器具
公开(公告)号：US20120088020A1
公开(公告)日：2012-04-12
申请号：US13331850
申请日：2011-12-20
申请人： Won Hui LEE , Hyun Jung Kim
发明人： Won Hui LEE , Hyun Jung Kim
IPC分类号： A23L1/015
CPC分类号： A61L9/22 , F24C15/2014
摘要： A method for deodorizing air in a cooking device including exhausting air containing odor-producing materials from a cooking chamber of the cooking device through a first opening, and selectively deodorizing air passing through the first opening by removing the odor-producing materials.
摘要翻译：一种用于通过第一开口从烹饪装置的烹饪室排出含有产生气味的材料的空气的烹饪装置中的空气除臭方法，并且通过除去产生气味的材料来选择性地除去通过第一开口的空气。

3. 发明授权

US08101894B2 Cooking device with deodorization 有权
标题翻译：烹饪器具除臭
公开(公告)号：US08101894B2
公开(公告)日：2012-01-24
申请号：US12234964
申请日：2008-09-22
申请人： Won Hui Lee , Hyun Jung Kim
发明人： Won Hui Lee , Hyun Jung Kim
IPC分类号： H05B6/68 , F24C15/30 , F24C15/00
CPC分类号： A61L9/22 , F24C15/2014
摘要： A cooking device includes an inner case, a cooking chamber within the inner case and an odor removal unit configured to generate a plasma discharge for removing odor-producing materials from the cooking chamber.
摘要翻译：烹饪装置包括内壳，内壳内的烹饪室和气味消除单元，其构造成产生用于从烹饪室除去产生气味的材料的等离子体放电。

4. 发明授权

US09107972B2 Cooking device with deodorization 有权
标题翻译：烹饪器具除臭
公开(公告)号：US09107972B2
公开(公告)日：2015-08-18
申请号：US13331850
申请日：2011-12-20
申请人： Won Hui Lee , Hyun Jung Kim
发明人： Won Hui Lee , Hyun Jung Kim
IPC分类号： H05B6/64 , A23L1/015 , F24C15/20 , A47J37/00 , A61L9/22
CPC分类号： A61L9/22 , F24C15/2014
摘要： A method for deodorizing air in a cooking device including exhausting air containing odor-producing materials from a cooking chamber of the cooking device through a first opening, and selectively deodorizing air passing through the first opening by removing the odor-producing materials.
摘要翻译：一种用于通过第一开口从烹饪装置的烹饪室排出含有产生气味的材料的空气的烹饪装置中的空气除臭方法，并且通过除去产生气味的材料来选择性地除去通过第一开口的空气。

5. 发明授权

US10655098B2 Cell culture system 有权
公开(公告)号：US10655098B2
公开(公告)日：2020-05-19
申请号：US14001838
申请日：2012-02-28
申请人： Donald E. Ingber , Hyun Jung Kim
发明人： Donald E. Ingber , Hyun Jung Kim
IPC分类号： C12M3/00 , C12M1/00 , C12M1/12 , C12M1/34 , C12M1/24 , C12M1/06
摘要： The embodiments of the invention described herein relate to systems and methods for culturing and/or maintaining intestinal cells, tissues and/or organoids in vitro. The cells, tissues and/or organoids cultured according to the methods and systems described herein can mimic or reproduce natural intestinal epithelial structures and behavior as well as support co-culture of intestinal microflora.

6. 发明授权

US08785453B2 Arylpiperazine-containing purine derivatives and uses thereof 有权
标题翻译：含芳基哌嗪的嘌呤衍生物及其用途
公开(公告)号：US08785453B2
公开(公告)日：2014-07-22
申请号：US13509140
申请日：2010-11-05
申请人： Jinhwa Lee , Eun-Jung Park , Suk Youn Kang , Younggyu Kong , Junwon Lee , Hyun Jung Kim , Myung Eun Jung , Ki-Nam Lee , Jeongmin Kim , Ae Nim Pae , Woo-Kyu Park
发明人： Jinhwa Lee , Eun-Jung Park , Suk Youn Kang , Younggyu Kong , Junwon Lee , Hyun Jung Kim , Myung Eun Jung , Ki-Nam Lee , Jeongmin Kim , Ae Nim Pae , Woo-Kyu Park
IPC分类号： A61K31/52 , C07D473/34
CPC分类号： C07D473/34
摘要： A novel arylpiperazine-containing purine derivatives and a pharmaceutical composition comprising the same as an active ingredient, which are useful for preventing or treating depressive disorders, are provided.
摘要翻译：提供了一种新的含有芳基哌嗪的嘌呤衍生物和包含其作为活性成分的药物组合物，其可用于预防或治疗抑郁障碍。

7. 发明授权

US08506149B2 Optical sheets 有权
标题翻译：光学片
公开(公告)号：US08506149B2
公开(公告)日：2013-08-13
申请号：US12532081
申请日：2008-03-19
申请人： Kyung Nam Kim , Hyun Jung Kim , Sang Kyun Kim , Hyun Jin Kim , Jong Min Park , Chung Seock Kang
发明人： Kyung Nam Kim , Hyun Jung Kim , Sang Kyun Kim , Hyun Jin Kim , Jong Min Park , Chung Seock Kang
IPC分类号： G09F13/04
CPC分类号： G02B5/02 , G02B5/045
摘要： Disclosed is an optical sheet for use in liquid crystal displays, which simultaneously functions to uniformly diffuse light emitted from a light guide plate and a diffusion plate and to increase brightness, decreases the loss of light, and enables the fabrication of thinner liquid crystal displays.
摘要翻译：公开了一种用于液晶显示器的光学片，其同时起到均匀地漫射从导光板和扩散板发射的光并增加亮度，减少光损失，并且能够制造更薄的液晶显示器的功能。

8. 发明授权

US08486784B2 Vertical semiconductor device and method of manufacturing the same 失效
标题翻译：垂直半导体器件及其制造方法
公开(公告)号：US08486784B2
公开(公告)日：2013-07-16
申请号：US12979323
申请日：2010-12-27
申请人： Hyun Jung Kim
发明人： Hyun Jung Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66666 , H01L21/2256 , H01L21/26586 , H01L29/7827
摘要： A vertical semiconductor device with improved junction profile and a method of manufacturing the same are provided. The vertical semiconductor device includes a pillar vertically extended from a surface of a semiconductor substrate, a silicon layer formed in a bit line contact region of one sidewall of the pillar, and a junction region formed within a portion of the pillar contacting with the silicon layer.
摘要翻译：提供一种具有改进的结型材的垂直半导体器件及其制造方法。垂直半导体器件包括从半导体衬底的表面垂直延伸的柱，形成在柱的一个侧壁的位线接触区域中的硅层和形成在与硅层接触的柱的一部分内的接合区域。

9. 发明授权

US08076284B2 Analogues of antimicrobial and anticancer peptide synthesized and produced from Gaegurin 5 有权
标题翻译：由Gaegurin合成和生产的抗微生物剂和抗癌肽类似物5
公开(公告)号：US08076284B2
公开(公告)日：2011-12-13
申请号：US12301028
申请日：2007-05-14
申请人： Bong Jin Lee , Min Duk Seo , Su Jin Kang , Hyun Jung Kim
发明人： Bong Jin Lee , Min Duk Seo , Su Jin Kang , Hyun Jung Kim
IPC分类号： A61K38/08 , C07K7/06 , A61P35/00 , A61P31/00
CPC分类号： C07K14/463 , A61K38/00 , C07K7/06
摘要： Antimicrobial and anticancer peptides engineered using Gaegurin 5 isolated from Korean frog (Rana rugosa), which have a smaller structure compared with previously known Gaegurin peptides and show potent antimicrobial and anticancer activity. Specifically, the antimicrobial and anticancer peptides synthesized from the shortest length of Gaegurin 5, show potent antimicrobial activity against gram positive and negative strains, good safety with very low hemolytic activity and favorable advantages such as drug absorption and drug transportation due to its advantageous structural property, which can be useful as a potent antimicrobial or anticancer agent.
摘要翻译：使用从韩国青蛙（Rana rugosa）分离的Gaegurin 5工程化的抗微生物和抗癌肽，其结构与先前已知的Gaegurin肽相比具有较小的结构并显示出有效的抗微生物和抗癌活性。具体来说，从Gaegurin 5的最短长度合成的抗菌肽和抗癌肽对于革兰氏阳性菌株和阴性菌株显示出有效的抗微生物活性，具有非常低的溶血活性的良好的安全性和由于其有利的结构性质而引起的药物吸收和药物运输等有利的优点，其可用作有效的抗微生物剂或抗癌剂。

10. 发明申请

US20090093101A1 Method for Manufacturing a Transistor of a Semiconductor Memory Device 有权
标题翻译：制造半导体存储器件的晶体管的方法
公开(公告)号：US20090093101A1
公开(公告)日：2009-04-09
申请号：US12331830
申请日：2008-12-10
申请人： Hyun Jung Kim
发明人： Hyun Jung Kim
IPC分类号： H01L21/762
CPC分类号： H01L29/7831 , H01L27/10823 , H01L27/10826 , H01L27/10844 , H01L29/7851
摘要： A transistor of a semiconductor memory device including a semiconductor substrate having a plurality of active regions and a device isolation region, a plurality of first and second trench device isolation layers, which are arranged alternately with each other on the device isolation region of the semiconductor substrate, the first trench device isolation layers having a first thickness corresponding to a relatively high step height, and the second trench device isolation layers having a second thickness corresponding to a relatively low step height, a recess region formed in each of the active regions by a predetermined depth to have a stepped profile at a boundary portion thereof, the recess region having a height higher than that of the second trench device isolation layers to have an upwardly protruded portion between adjacent two second trench device isolation layers, a gate insulation layer, and a plurality of gate stacks formed on the gate insulation layer to overlap with the stepped profile of the respective active regions and the protruded portion of the relevant recess region.
摘要翻译：一种半导体存储器件的晶体管，包括具有多个有源区和器件隔离区的半导体衬底，多个第一和第二沟槽器件隔离层，它们在半导体衬底的器件隔离区上相互交替布置所述第一沟槽器件隔离层具有对应于较高台阶高度的第一厚度，并且所述第二沟槽器件隔离层具有对应于相对较低台阶高度的第二厚度，在每个所述有源区域中形成的凹陷区域由预定深度在其边界部分处具有阶梯轮廓，所述凹陷区域的高度高于所述第二沟槽器件隔离层的高度，以在相邻的两个第二沟槽器件隔离层之间具有向上突出部分，栅极绝缘层和形成在栅极绝缘层上的与栅极堆叠重叠的多个栅极堆叠相应的活性区域的凸起轮廓和相关凹陷区域的突出部分。

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