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1. 发明授权

US08350661B2 Breakdown layer via lateral diffusion 有权
标题翻译：击穿层通过横向扩散
公开(公告)号：US08350661B2
公开(公告)日：2013-01-08
申请号：US12471937
申请日：2009-05-26
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
IPC分类号： H01C7/13
CPC分类号： H01C7/006 , G11C13/0004 , H01C17/08 , H01L45/06 , H01L45/12 , H01L45/1246 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1658 , H01L45/1683 , Y10T29/49082
摘要： An electronic device including a breakdown layer having variable thickness. The device includes a variable resistance material positioned between two electrodes. A breakdown layer is interposed between the variable resistance material and one of the electrodes. The breakdown layer has a non-uniform thickness, which serves to bias the breakdown event toward the thinner portions of the breakdown layer. As a result, the placement, size, and number of ruptures in the breakdown layer are more consistent over a series or array of devices. The variable resistance material may be a phase-change material. The variable-thickness breakdown layer may be formed through a diffusion process by introducing a gas containing a resistivity-enhancing species to the environment of segmented variable resistance devices during fabrication. The resistivity-enhancing element penetrates the outer perimeter of the variable resistance material and diffuses toward the interior of the device. The resistivity-enhancing species increases the resistance of the interface between the variable resistance material and the electrode by interacting with the variable resistance material and/or electrode to form a resistive interfacial material. Based on the diffusional nature of the process, the concentration of the resistivity-enhancing species decreases toward the center of the device and as a result, the breakdown layer is thinner toward the center of the device.
摘要翻译：一种包括具有可变厚度的击穿层的电子装置。该装置包括位于两个电极之间的可变电阻材料。在可变电阻材料和其中一个电极之间夹有击穿层。击穿层具有不均匀的厚度，其用于将击穿事件偏向击穿层的较薄部分。因此，击穿层中的断裂位置，尺寸和数量在一系列或多个器件中更为一致。可变电阻材料可以是相变材料。可变厚度击穿层可以通过扩散工艺形成，通过在制造过程中将含有电阻率增强物质的气体引入分段可变电阻器件的环境中。电阻率增强元件穿透可变电阻材料的外周，并向器件的内部扩散。电阻率增强物质通过与可变电阻材料和/或电极相互作用来增加可变电阻材料和电极之间的界面的电阻，以形成电阻界面材料。基于该工艺的扩散性质，电阻率增强物质的浓度朝向器件的中心减小，结果，击穿层朝向器件的中心较薄。

2. 发明申请

US20100301988A1 Breakdown Layer via Lateral Diffusion 有权
标题翻译：通过侧向扩散分解层
公开(公告)号：US20100301988A1
公开(公告)日：2010-12-02
申请号：US12471937
申请日：2009-05-26
申请人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
发明人： Wolodymyr Czubatyj , Tyler Lowrey , Edward J. Spall
IPC分类号： H01C7/00 , H01C17/00
CPC分类号： H01C7/006 , G11C13/0004 , H01C17/08 , H01L45/06 , H01L45/12 , H01L45/1246 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1658 , H01L45/1683 , Y10T29/49082
摘要： An electronic device including a breakdown layer having variable thickness. The device includes a variable resistance material positioned between two electrodes. A breakdown layer is interposed between the variable resistance material and one of the electrodes. The breakdown layer has a non-uniform thickness, which serves to bias the breakdown event toward the thinner portions of the breakdown layer. As a result, the placement, size, and number of ruptures in the breakdown layer are more consistent over a series or array of devices. The variable resistance material may be a phase-change material. The variable-thickness breakdown layer may be formed through a diffusion process by introducing a gas containing a resistivity-enhancing species to the environment of segmented variable resistance devices during fabrication. The resistivity-enhancing element penetrates the outer perimeter of the variable resistance material and diffuses toward the interior of the device. The resistivity-enhancing species increases the resistance of the interface between the variable resistance material and the electrode by interacting with the variable resistance material and/or electrode to form a resistive interfacial material. Based on the diffusional nature of the process, the concentration of the resistivity-enhancing species decreases toward the center of the device and as a result, the breakdown layer is thinner toward the center of the device.
摘要翻译：一种包括具有可变厚度的击穿层的电子装置。该装置包括位于两个电极之间的可变电阻材料。在可变电阻材料和其中一个电极之间夹有击穿层。击穿层具有不均匀的厚度，其用于将击穿事件偏向击穿层的较薄部分。因此，击穿层中的断裂位置，尺寸和数量在一系列或多个器件中更为一致。可变电阻材料可以是相变材料。可变厚度击穿层可以通过扩散工艺形成，通过在制造过程中将含有电阻率增强物质的气体引入分段可变电阻器件的环境中。电阻率增强元件穿透可变电阻材料的外周，并向器件的内部扩散。电阻率增强物质通过与可变电阻材料和/或电极相互作用来增加可变电阻材料和电极之间的界面的电阻，以形成电阻界面材料。基于该工艺的扩散性质，电阻率增强物质的浓度朝向器件的中心减小，结果，击穿层朝向器件的中心较薄。

3. 发明授权

US07663907B2 Die customization using programmable resistance memory elements 有权
标题翻译：使用可编程电阻存储元件进行模具定制
公开(公告)号：US07663907B2
公开(公告)日：2010-02-16
申请号：US11229955
申请日：2005-09-19
申请人： Tyler Lowrey , Guy C. Wicker , Edward J. Spall
发明人： Tyler Lowrey , Guy C. Wicker , Edward J. Spall
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C2013/0083 , G11C2029/4402
摘要： A method of customizing an integrated circuit chip, comprising the steps of: providing an electronic circuit on said chip; providing a phase-change memory on the chip; storing information about said electronic circuit in the phase-change memory. A method of operating an optical display.
摘要翻译：一种定制集成电路芯片的方法，包括以下步骤：在所述芯片上提供电子电路; 在芯片上提供相变存储器; 将关于所述电子电路的信息存储在相变存储器中。一种操作光学显示器的方法。

4. 发明申请

US20100201697A1 Die Customization using Programmable Resistance Memory Elements 审中-公开
标题翻译：使用可编程电阻存储元件进行模具定制
公开(公告)号：US20100201697A1
公开(公告)日：2010-08-12
申请号：US12705639
申请日：2010-02-15
申请人： Tyler Lowrey , Guy C. Wicker , Edward J. Spall
发明人： Tyler Lowrey , Guy C. Wicker , Edward J. Spall
IPC分类号： G09G5/39
CPC分类号： G11C13/0004 , G11C2013/0083 , G11C2029/4402
摘要： A method of customizing an integrated circuit chip, comprising the steps of: providing an electronic circuit on said chip; providing a phase-change memory on the chip; storing information about said electronic circuit in the phase-change memory. A method of operating an optical display.
摘要翻译：一种定制集成电路芯片的方法，包括以下步骤：在所述芯片上提供电子电路; 在芯片上提供相变存储器; 将关于所述电子电路的信息存储在相变存储器中。一种操作光学显示器的方法。

5. 发明授权

US07471554B2 Phase change memory latch 有权
标题翻译：相变存储器锁存器
公开(公告)号：US07471554B2
公开(公告)日：2008-12-30
申请号：US11341983
申请日：2006-01-27
申请人： Edward J. Spall , Tyler Lowrey
发明人： Edward J. Spall , Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C13/0004 , G11C14/009
摘要： A non-volatile memory latch may be formed with a phase change memory layer. Such a latch may be faster and more easily integrated into main stream semiconductor processes than conventional latches that use non-volatile memory elements such as flash memory.
摘要翻译：非易失性存储器锁存器可以形成有相变存储器层。与使用诸如闪存等非易失性存储器元件的常规锁存器相比，这样的锁存器可以更快更容易地集成到主流半导体处理中。

6. 发明授权

US5517515A Multichip module with integrated test circuitry disposed within interposer substrate 失效
标题翻译：集成测试电路的多芯片模块设置在内插器基板内
公开(公告)号：US5517515A
公开(公告)日：1996-05-14
申请号：US292120
申请日：1994-08-17
申请人： Edward J. Spall , Thomas M. Storey
发明人： Edward J. Spall , Thomas M. Storey
IPC分类号： G01R31/28 , G01R31/3185 , H01L21/66 , H03K19/00 , G06F11/00
CPC分类号： G01R31/318536 , G01R31/318505
摘要： A multichip module (MCM) and associated fabrication technique are presented wherein a test circuit is disposed within the interposer substrate of the MCM to facilitate testing of the module's integrated circuit chips and testing of the interconnect wiring between integrated circuit chips. The test circuitry, disposed within the interposer substrate comprises semiconductor logic circuitry that electrically connects to the integrated circuit chips of the module. In the various multiplexer latch and shift register latch embodiments disclosed, active test circuitry within the interposer substrate is minimized and is essentially transparent to the integrated circuit chip designs incorporated in the MCM.
摘要翻译：提出了一种多芯片模块（MCM）和相关的制造技术，其中测试电路设置在MCM的插入器基板内，以便于模块的集成电路芯片的测试和集成电路芯片之间的互连布线的测试。设置在插入器衬底内的测试电路包括电连接到模块的集成电路芯片的半导体逻辑电路。在公开的各种复用器锁存器和移位寄存器锁存器实施例中，内插器衬底内的有源测试电路被最小化，并且对于并入MCM中的集成电路芯片设计基本上是透明的。

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