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1. 发明授权

US09076931B2 Optoelectronic component and method for producing same 有权
标题翻译：光电元件及其制造方法
公开(公告)号：US09076931B2
公开(公告)日：2015-07-07
申请号：US13878178
申请日：2011-10-17
申请人： Wolfgang Schmid , Christoph Klemp , Alvaro Gomez-Iglesias
发明人： Wolfgang Schmid , Christoph Klemp , Alvaro Gomez-Iglesias
IPC分类号： H01L31/0264 , H01L33/46 , H01L33/44 , H01L33/40
CPC分类号： H01L33/46 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/10336 , H01L2924/10339 , H01L2924/10342 , H01L2924/10345 , H01L2924/10349 , H01L2924/00
摘要： An optoelectronic component has a semiconductor body, a dielectric layer, a mirror and an additional layer. The semiconductor body has an active zone for generating electromagnetic radiation and an n-contact and a p-contact (1b) for electrical contacting purposes. The dielectric layer is disposed between the semiconductor body and the mirror. The additional layer is disposed between the semiconductor body and the dielectric layer. Furthermore, a method for producing a component of this type is provided.
摘要翻译：光电子部件具有半导体本体，电介质层，反射镜和附加层。半导体本体具有用于产生电磁辐射的有源区和用于电接触目的的n接触和p接触（1b）。电介质层设置在半导体本体和反射镜之间。附加层设置在半导体本体和电介质层之间。此外，提供了这种类型的部件的制造方法。

2. 发明申请

US20130264596A1 Optoelectronic Component and Method for Producing Same 有权
标题翻译：光电子元件及其制作方法
公开(公告)号：US20130264596A1
公开(公告)日：2013-10-10
申请号：US13878178
申请日：2011-10-17
申请人： Wolfgang Schmid , Christoph Klemp , Alvaro Gomez-Iglesias
发明人： Wolfgang Schmid , Christoph Klemp , Alvaro Gomez-Iglesias
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L33/405 , H01L33/44 , H01L2924/0002 , H01L2924/10336 , H01L2924/10339 , H01L2924/10342 , H01L2924/10345 , H01L2924/10349 , H01L2924/00
摘要： An optoelectronic component has a semiconductor body, a dielectric layer, a mirror and an additional layer. The semiconductor body has an active zone for generating electromagnetic radiation and an n-contact and a p-contact (1b) for electrical contacting purposes. The dielectric layer is disposed between the semiconductor body and the mirror. The additional layer is disposed between the semiconductor body and the dielectric layer. Furthermore, a method for producing a component of this type is provided.
摘要翻译：光电子部件具有半导体本体，电介质层，反射镜和附加层。半导体本体具有用于产生电磁辐射的有源区和用于电接触目的的n接触和p接触（1b）。电介质层设置在半导体本体和反射镜之间。附加层设置在半导体本体和电介质层之间。此外，提供了这种类型的部件的制造方法。

3. 发明申请

US20120263205A1 Edge-Emitting Semiconductor Laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US20120263205A1
公开(公告)日：2012-10-18
申请号：US13497036
申请日：2010-09-01
申请人： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
发明人： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
IPC分类号： H01S5/20
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2031 , H01S5/34313 , H01S2301/16 , H01S2301/166
摘要： An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.
摘要翻译：一种边缘发射半导体激光器，包括有源辐射发生区（1）和公共波导（8），其适于引导在半导体激光器内的有源区（1）中产生的辐射。公共波导（8）包括布置在第一n掺杂层（4）和有源区（1）之间的第一n掺杂层（4）和第二n掺杂层（5），其中第二n掺杂层（5）的折射率n2大于第一n掺杂层（4）的折射率n1值dn。

4. 发明授权

US09136671B2 Edge emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US09136671B2
公开(公告)日：2015-09-15
申请号：US13503661
申请日：2010-08-25
申请人： Christian Lauer , Alvaro Gomez-Iglesias
发明人： Christian Lauer , Alvaro Gomez-Iglesias
IPC分类号： H01S5/00 , H01S5/10 , H01S5/042 , H01S5/065 , H01S5/20 , H01S5/32 , H01S5/40
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure is formed in the semiconductor body and includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer including a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.
摘要翻译：边缘发射半导体激光器包括：包括波导区域的半导体本体，其中波导区域包括第一波导层，第二波导层和布置在第一和第二波导层之间的有源层，并且产生激光辐射，波导区域布置在半导体本体的生长方向上设置在波导区域下游的第一和第二覆层之间，在半导体本体中形成相结构，并且包括从半导体本体的顶侧延伸到第二覆层的至少一个切口包含与第二包层的半导体材料不同的半导体材料的至少一个第一中间层嵌入到第二包层中，并且切口从半导体本体的顶侧至少部分地延伸到第一中间层。

5. 发明申请

US20120250717A1 EDGE EMITTING SEMICONDUCTOR LASER 有权
标题翻译：边缘发射半导体激光
公开(公告)号：US20120250717A1
公开(公告)日：2012-10-04
申请号：US13503661
申请日：2010-08-25
申请人： Christian Lauer , Alvaro Gomez-Iglesias
发明人： Christian Lauer , Alvaro Gomez-Iglesias
IPC分类号： H01S5/028
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first waveguide layer and the second waveguide layer and generates laser radiation, the waveguide region is arranged between a first cladding layer and a second cladding layer disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure for selection of lateral modes of the laser radiation emitted by the active layer is formed in the semiconductor body, wherein the phase structure comprises at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer comprising a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.
摘要翻译：边缘发射半导体激光器包括：包括波导区域的半导体本体，其中波导区域包括布置在第一波导层和第二波导层之间的第一波导层，第二波导层和有源层，并产生激光辐射，波导区域布置在第一包层和设置在半导体主体的生长方向的波导区域下游的第二包层之间，在半导体中形成用于选择由有源层发射的激光辐射的横向模式的相位结构其中所述相结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口，包括不同于所述第二覆层的半导体材料的半导体材料的至少一个第一中间层嵌入第二包覆层，并且切口从顶部延伸 e至少部分地进入第一中间层。

6. 发明授权

US08737444B2 Edge-emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US08737444B2
公开(公告)日：2014-05-27
申请号：US13497036
申请日：2010-09-01
申请人： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
发明人： Alvaro Gomez-Iglesias , Guenther Groenninger , Christian Lauer , Harald Koenig
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2031 , H01S5/34313 , H01S2301/16 , H01S2301/166
摘要： An edge emitting semiconductor laser comprising an active, radiation-generating zone (1), and an common waveguide (8), which is suitable for guiding the radiation generated in the active zone (1) within the semiconductor laser. The common waveguide (8) comprises a first n-doped layer (4) and a second n-doped layer (5), which is arranged between the first n-doped layer (4) and the active zone (1), wherein the refractive index n2 of the second n-doped layer (5) is greater than the refractive index n1 of the first n-doped layer (4) by a value dn.
摘要翻译：一种边缘发射半导体激光器，包括有源辐射发生区（1）和公共波导（8），其适于引导在半导体激光器内的有源区（1）中产生的辐射。公共波导（8）包括布置在第一n掺杂层（4）和有源区（1）之间的第一n掺杂层（4）和第二n掺杂层（5），其中第二n掺杂层（5）的折射率n2大于第一n掺杂层（4）的折射率n1值dn。

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