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1. 发明授权

US07352542B2 Enhanced spin-valve sensor with engineered overlayer formed on a free layer 失效
标题翻译：在自由层上形成具有工程覆层的增强型自旋阀传感器
公开(公告)号：US07352542B2
公开(公告)日：2008-04-01
申请号：US10898816
申请日：2004-07-26
申请人： Witold Kula , Alexander M. Zeltser
发明人： Witold Kula , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed on the free layer to decrease free layer magnetic thickness without reducing physical thickness.
摘要翻译：公开了一种用于在数据存储介质上检测磁记录信息的GMR传感器。传感器包括铁磁自由层和夹着导电间隔层的铁磁性钉扎层。在自由层上形成工程化的覆层以减少自由层的磁性厚度，而不会减小物理厚度。

2. 发明授权

US07007373B2 Method of manufacturing enhanced spin-valve sensor with engineered overlayer 失效
标题翻译：用工程覆层制造增强型自旋阀传感器的方法
公开(公告)号：US07007373B2
公开(公告)日：2006-03-07
申请号：US10298340
申请日：2002-11-18
申请人： Witold Kula , Alexander M. Zeltser
发明人： Witold Kula , Alexander M. Zeltser
IPC分类号： G11B5/187 , C23C14/06 , B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B2005/3996 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044
摘要： A method for making an enhanced spin valve sensor with engineered overlayer for sensing magnetically recorded information on a data storage medium. The method includes forming a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An overlayer is formed on the free layer and adapted to decrease free layer magnetic thickness without reducing physical thickness.
摘要翻译：一种制造具有工程覆层的增强自旋阀传感器的方法，用于在数据存储介质上感测磁记录信息。该方法包括形成铁磁自由层和夹着导电间隔层的铁磁性钉扎层。在自由层上形成覆盖层，适于降低自由层磁性厚度，而不会减小物理厚度。

3. 发明授权

US09373775B2 Methods of forming magnetic memory cells 有权
标题翻译：形成磁记忆单元的方法
公开(公告)号：US09373775B2
公开(公告)日：2016-06-21
申请号：US13614212
申请日：2012-09-13
申请人： Gurtej S. Sandhu , Witold Kula , Wayne I. Kinney
发明人： Gurtej S. Sandhu , Witold Kula , Wayne I. Kinney
IPC分类号： H01L27/20 , H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/02 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
摘要： Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more unifoimity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.
摘要翻译：公开了形成存储单元，磁存储单元结构和磁存储单元结构阵列的方法。方法的实施例包括图案化前体结构以形成包括至少上部离散特征部分和具有更宽的宽度，长度或两者比较高离散特征部分的下部特征部分的阶梯式结构。该方法使用沿着第一轴线例如x轴，然后沿着垂直于第一轴线或垂直于第一轴线的第二轴线，例如y轴定向的图案化动作。因此，即使在低于约三十纳米的尺寸下，图案化动作也可允许在多个形成的相邻电池芯结构之间的更大的均匀性。还公开了磁存储器结构和存储单元阵列。

4. 发明授权

US09048411B2 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications 有权
标题翻译：具有减少的垂直退磁场的多层使用瞬时应用的时间稀释
公开(公告)号：US09048411B2
公开(公告)日：2015-06-02
申请号：US14047130
申请日：2013-10-07
申请人： Guenole Jan , Ru Ying Tong , Witold Kula
发明人： Guenole Jan , Ru Ying Tong , Witold Kula
IPC分类号： H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic element is disclosed that has a composite free layer with a FM1/moment diluting/FM2 configuration wherein FM1 and FM2 are magnetic layers made of one or more of Co, Fe, Ni, and B and the moment diluting layer is used to reduce the perpendicular demagnetizing field. As a result, lower resistance x area product and higher thermal stability are realized when perpendicular surface anisotropy dominates shape anisotropy to give a magnetization perpendicular to the planes of the FM1, FM2 layers. The moment diluting layer may be a non-magnetic metal like Ta or a CoFe alloy with a doped non-magnetic metal. A perpendicular Hk enhancing layer interfaces with the FM2 layer and may be an oxide to increase the perpendicular anisotropy field in the FM2 layer. A method for forming the magnetic element is also provided.
摘要翻译：公开了具有FM1 /力矩稀释/ FM2配置的复合自由层的磁性元件，其中FM1和FM2是由Co，Fe，Ni和B中的一种或多种构成的磁性层，并且力矩稀释层用于减少垂直退磁场。结果，当垂直表面各向异性支配形状各向异性以产生垂直于FM1，FM2层的平面的磁化时，实现较低的电阻x面积乘积和较高的热稳定性。瞬时稀释层可以是非磁性金属如Ta或具有掺杂的非磁性金属的CoFe合金。垂直Hk增强层与FM2层接合，并且可以是氧化物以增加FM2层中的垂直各向异性场。还提供了形成磁性元件的方法。

5. 发明授权

US08900884B2 MTJ element for STT MRAM 有权
标题翻译： STT MRAM的MTJ元素
公开(公告)号：US08900884B2
公开(公告)日：2014-12-02
申请号：US13525502
申请日：2012-06-18
申请人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
发明人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要翻译：公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

6. 发明申请

US20130334629A1 MTJ Element for STT MRAM 有权
标题翻译： STT MRAM的MTJ元素
公开(公告)号：US20130334629A1
公开(公告)日：2013-12-19
申请号：US13525502
申请日：2012-06-18
申请人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
发明人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要翻译：公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

7. 发明申请

US20130270523A1 Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer 有权
标题翻译：通过插入硼粉尘层的磁性器件应用具有高热稳定性的自由层
公开(公告)号：US20130270523A1
公开(公告)日：2013-10-17
申请号：US13448557
申请日：2012-04-17
申请人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
摘要翻译：在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能。每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

8. 发明申请

US20130224521A1 High Thermal Stability Reference Structure with Out-of-Plane Aniotropy for Magnetic Device Applications 有权
标题翻译：用于磁性器件应用的具有非平面各向异性的高热稳定性参考结构
公开(公告)号：US20130224521A1
公开(公告)日：2013-08-29
申请号：US13406972
申请日：2012-02-28
申请人： Yu-Jen Wang , Witold Kula , Ru Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru Ying Tong , Guenole Jan
IPC分类号： G11B5/66 , H01F41/22 , H01F41/14
CPC分类号： H01L43/12 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/66 , G11B5/84 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/305 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.
摘要翻译：通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

9. 发明授权

US08372661B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
标题翻译：用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US08372661B2
公开(公告)日：2013-02-12
申请号：US11981127
申请日：2007-10-31
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

10. 发明申请

US20120280337A1 Composite free layer within magnetic tunnel junction for MRAM applications 有权
标题翻译：用于MRAM应用的磁性隧道结内的复合自由层
公开(公告)号：US20120280337A1
公开(公告)日：2012-11-08
申请号：US13068222
申请日：2011-05-05
申请人： Wei Cao , Witold Kula
发明人： Wei Cao , Witold Kula
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/161 , H01F10/187 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a FL1/FL2/FL3 configuration where FL1 and FL2 are crystalline magnetic layers and FL3 is an amorphous NiFeX layer for improved bit switching performance. FL1 layer is CoFe which affords a high magnetoresistive (MR) ratio when forming an interface with a MgO tunnel barrier. FL2 is Fe to improve switching performance. NiFeX thickness where X is Hf is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. Annealing at 330° C. to 360° C. provides a high MR ratio of 190%. Furthermore, low Hc and Hk are simultaneously achieved with improved bit switching performance and fewer shorts without compromising other MTJ properties such as MR ratio. As a result of high MR ratio and lower bit-to-bit resistance variation, higher reading margin is realized.
摘要翻译：公开了一种具有FL1 / FL2 / FL3配置的复合自由层的MRAM阵列，其中FL1和FL2是结晶磁性层，FL3是非晶NiFeX层，用于改善位切换性能。 FL1层是当与MgO隧道势垒形成界面时提供高磁阻（MR）比的CoFe。 FL2是Fe提高开关性能。其中X为Hf的NiFeX厚度优选在20至40埃之间，以显着降低位线切换电流和短路位数。在330℃至360℃退火提供190％的高MR比。此外，低Hc和Hk同时实现，具有改进的位切换性能和更短的短路，而不会影响其他MTJ特性，例如MR比。由于高MR比和较低的比特电阻变化，实现了更高的读取余量。

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