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1. 发明授权

US5530372A Method of probing a net of an IC at an optimal probe-point 失效
标题翻译：在最佳探针点探测IC网络的方法
公开(公告)号：US5530372A
公开(公告)日：1996-06-25
申请号：US228027
申请日：1994-04-15
申请人： William T. Lee , Ronny Soetarman , Christopher G. Talbot
发明人： William T. Lee , Ronny Soetarman , Christopher G. Talbot
IPC分类号： G01R31/26 , G01R31/28 , G01R31/302 , G01R31/303
CPC分类号： G01R31/303 , G01R31/2886 , H01J2237/2594 , H01J2237/30416
摘要： Probe-point placement methods are described. A layout description, a netlist description and a cross-reference description of an IC are retrieved from storage. The data structures associate with each net name a list of polygons. Polygons of a selected net are broken into segments of a specified step size. Each segment is evaluated in accordance with a set of prober rules. Values produced by the prober rules are weighted and combined to obtain a prober score for each segment. The prober score indicates suitability of the corresponding net location for probing. If the best prober score indicates an optimal segment exists for probing, the coordinates of that segment are stored and used to direct a probe to the corresponding location of the IC. If the best prober score indicates no optimal segment exists for probing, each segment of the net is evaluated in accordance with a set of probe-point cutter rules. Values produced by the probe-point cutter rules are weighted and combined to obtain a cutter score for each segment. The cutter score indicates suitability of the corresponding net location for cutting a probe-point hole. A segment having the best cutter score is considered optimal for placing a probe point. The methods can be used, e.g., with electron-beam, focused-ion-beam and laser-beam systems, and with mechanical probe systems.
摘要翻译：描述探针点放置方法。从存储器检索布局描述，网表描述和IC的交叉引用描述。数据结构与每个网络名称相关联的多边形列表。所选网络的多边形被分解成指定步长的段。每个段都按照一组探测器规则进行评估。由探测器规则产生的值被加权并组合以获得每个段的探测器得分。探测器分数表示相应的净位置适用于探测。如果最好的探针分数表示存在用于探测的最佳分段，则该段的坐标被存储并用于将探针引导到IC的对应位置。如果最佳探测器分数表示探测不存在最佳分段，则根据一组探针切割器规则评估网络的每个分段。由探针切割器规则产生的值被加权并组合以获得每个切片的切割分数。切割分数表示用于切割探针孔的相应净位置的适用性。具有最佳切割分数的片段被认为是放置探针点的最佳选择。该方法可以用于例如电子束，聚焦离子束和激光束系统以及机械探针系统。

2. 发明授权

US06509750B1 Apparatus for detecting defects in patterned substrates 有权
标题翻译：用于检测图案化基板中的缺陷的装置
公开(公告)号：US06509750B1
公开(公告)日：2003-01-21
申请号：US09846487
申请日：2001-04-30
申请人： Christopher G. Talbot , Chiwoei Wayne Lo
发明人： Christopher G. Talbot , Chiwoei Wayne Lo
IPC分类号： G01R31302
CPC分类号： H01J37/265 , G06T7/0004 , H01J37/28 , H01J2237/202 , H01J2237/221 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817
摘要： Defects in a patterned substrate are detected by positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle imaging system having a field of view (FOV) with a substantially uniform resolution over the FOV; operating the charged-particle-beam optical column to acquire images over multiple subareas of the patterned substrate lying within the FOV by scanning a charged-particle beam over the patterned substrate while maintaining the charged-particle-beam optical column fixed relative to the patterned substrate; and comparing the acquired images to a reference to identify defects in the patterned substrate. The use of a large-FOV imaging system with substantially uniform resolution over the FOV allows acquisition of images over a wide area of the patterned substrate without requiring mechanical stage moves, thereby reducing the time overhead associated with mechanical stage moves. Multiple columns can be ganged together to further improve throughput.
摘要翻译：通过相对于图案化衬底定位带电粒子束光学柱来检测图案化衬底中的缺陷，带电粒子成像系统具有在FOV上具有基本均匀分辨率的视场（FOV）; 操作带电粒子束光学柱以通过在图案化衬底上扫描带电粒子束，同时保持带电粒子束光学柱相对于图案化衬底固定而在位于FOV内的图案化衬底的多个子区域上获取图像 ; 以及将获取的图像与参考值进行比较，以识别图案化衬底中的缺陷。使用在FOV上具有基本上均匀分辨率的大FOV成像系统允许在图案化基底的广泛区域上获取图像，而不需要机械台移动，从而减少与机械台移动相关的时间开销。可以将多个列组合在一起以进一步提高吞吐量。

3. 发明授权

US5401972A Layout overlay for FIB operations 失效
标题翻译： FIB操作的布局覆盖
公开(公告)号：US5401972A
公开(公告)日：1995-03-28
申请号：US115997
申请日：1993-09-02
申请人： Christopher G. Talbot , Douglas Masnaghetti
发明人： Christopher G. Talbot , Douglas Masnaghetti
IPC分类号： H01J37/22 , G01Q30/02 , G01R31/303 , H01J37/304 , H01L21/027
CPC分类号： H01J37/3045 , G01R31/303 , H01J2237/31742
摘要： Focused ion bean (FIB) milling through a power plane of a device to expose or cut a hidden, lower-layer conductor requires accurate positioning relative to the hidden conductor of a box defining boundaries of the FIB operation. This can in general be done by aligning surface information (topology or voltage contrast) visible in a FIB or scanning electron microscope (SEM) image with an overlay image generated from stored data describing the device. The location of the hidden conductor relative to the visible surface information is determined from the stored data. Advanced integrated circuits often do not provide enough unique surface information near the FIB operation area to align the images with sufficient accuracy. In accordance with the invention, the imaging area is accurately deflected electronically (without moving the stage or changing the operating conditions of the FIB) to permit alignment over a much larger area, while maintaining pixel resolution and overlay accuracy needed to accurately position the FIB operation box.
摘要翻译：聚焦离子束（FIB）通过设备的功率平面研磨以暴露或切割隐藏的下层导体，需要相对于限定FIB操作边界的盒的隐藏导体进行精确定位。这通常可以通过将FIB或扫描电子显微镜（SEM）图像中可见的表面信息（拓扑或电压对比度）与从描述该器件的存储数据生成的覆盖图像进行对准来完成。根据存储的数据确定隐藏导体相对于可见表面信息的位置。先进的集成电路通常不能在FIB操作区域附近提供足够的独特表面信息，以使图像具有足够的精度。根据本发明，成像区域以电子方式准确地偏转（不移动平台或改变FIB的操作条件），以允许在更大的区域上对准，同时保持精确定位FIB操作所需的像素分辨率和覆盖精度框。

4. 发明授权

US06914441B2 Detection of defects in patterned substrates 有权
标题翻译：检测图案化基板中的缺陷
公开(公告)号：US06914441B2
公开(公告)日：2005-07-05
申请号：US10134210
申请日：2002-04-29
申请人： Christopher G. Talbot , Chiwoei Wayne Lo
发明人： Christopher G. Talbot , Chiwoei Wayne Lo
IPC分类号： G01R31/302 , G01B15/00 , G01N21/00 , G01N23/00 , G01N23/04 , G01N23/225 , G01Q30/04 , G01Q40/02 , G01R1/06 , G01R31/265 , G01R31/305 , H01J37/073 , H01J37/20 , H01J37/22 , H01J37/256 , H01J37/28 , H01L21/66
CPC分类号： H01J37/265 , G06T7/0004 , H01J37/28 , H01J2237/202 , H01J2237/221 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817
摘要： One embodiment of the present invention is a method of detecting defects in a patterned substrate, including: (a) positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle-beam optical column having a field of view (FOV) with a substantially uniform resolution over the FOV; (b) operating the charged-particle-beam optical column to acquire images of a region of the patterned substrate lying within the FOV by scanning the charged-particle beam over the patterned substrate; and (c) comparing the acquired images to a reference to identify defects in the patterned substrate.
摘要翻译：本发明的一个实施例是一种检测图案化衬底中的缺陷的方法，包括：（a）相对于图案化衬底定位带电粒子束光学柱，具有视场的带电粒子束光学柱（FOV），在FOV上具有基本均匀的分辨率; （b）通过在所述图案化衬底上扫描所述带电粒子束来操作所述带电粒子束光学柱以获取位于所述FOV内的所述图案化衬底的区域的图像; 和（c）将所获取的图像与参考进行比较，以识别图案化衬底中的缺陷。

5. 发明授权

US5144225A Methods and apparatus for acquiring data from intermittently failing circuits 失效
标题翻译：从间歇性故障电路获取数据的方法和装置
公开(公告)号：US5144225A
公开(公告)日：1992-09-01
申请号：US737553
申请日：1991-07-25
申请人： Christopher G. Talbot , Neil Richardson
发明人： Christopher G. Talbot , Neil Richardson
IPC分类号： G01R31/305
CPC分类号： G01R31/305
摘要： Methods and apparatus are disclosed for conditional acquisition of potential measurements in integrated circuits, with the aid of electron-beam probes. The conditional acquisition enables display of waveform images which permit diagnosis of the causes and/or origins of failure in circuits which fail intermittently. Data is acquired in the normal manner on each pass through the test pattern. At the end of each test pattern execution a pass/fail signal from the tester exercising the circuit is used to reject or accept the acquired data. In this fashion, it is possible to accumulate only that data which carries information about the failure of interest and to reject data which does not. Over several test pattern repetitions it is possible to display only that data which shows the failure. Engineers are thus able to efficiently diagnose intermittent failures without the need to change device operating parameters. In one form of the invention, (a) initially a first buffer is defined as a "good-data" buffer and a second buffer is defined as a "temporary-data" buffer; (b) the circuit is probed during application of a test vector pattern to acquire data; (c) the acquired data is summed with stored data from the "good-data" buffer, and the sum is stored in the "temporary-data" buffer; (d) a determination is made whether circuit has failed to operate as expected in response to the pattern and, if the circuit has failed to operate as expected, the second buffer is redefined as a "good-data" buffer and the first buffer is re-defined as a "temporary-data" buffer; and (e) steps (b)-(d) are repeated, such that the data stored in the "good-data" buffer represents failing operation of the circuit.
摘要翻译：公开了借助于电子束探针在集成电路中对电位测量进行条件采集的方法和装置。条件采集可以显示允许诊断间歇性故障的电路故障原因和/或故障起因的波形图像。在通过测试图案的每次通过中以正常方式获取数据。在每个测试模式结束时，执行来自运行电路的测试仪的通过/失败信号用于拒绝或接受所获取的数据。以这种方式，只能累积携带关于感兴趣的失败的信息的数据，并且拒绝不存在的数据。在几个测试模式重复中，可以仅显示显示故障的数据。因此，工程师能够有效地诊断间歇性故障，而不需要改变设备操作参数。在本发明的一种形式中，（a）最初将第一缓冲器定义为“良好数据”缓冲器，将第二缓冲器定义为“临时数据”缓冲器; （b）在应用测试矢量模式获取数据时探测电路; （c）将获取的数据与来自“好数据”缓冲器的存储数据相加，并将和存储在“临时数据”缓冲器中; （d）确定电路是否按照预期的方式响应于该模式而失败，并且如果电路未按预期操作失败，则将第二缓冲器重新定义为“良好数据”缓冲器，并且第一缓冲器重新定义为“临时数据”缓冲区; 和（e）重复步骤（b） - （d），使得存储在“良好数据”缓冲器中的数据表示电路的故障操作。

6. 发明授权

US07253645B2 Detection of defects in patterned substrates 失效
标题翻译：检测图案化基板中的缺陷
公开(公告)号：US07253645B2
公开(公告)日：2007-08-07
申请号：US11069491
申请日：2005-02-28
申请人： Christopher G. Talbot , Chiwoei Wayne Lo
发明人： Christopher G. Talbot , Chiwoei Wayne Lo
IPC分类号： G01R31/305 , G01R31/02 , G01N23/22
CPC分类号： H01J37/265 , G06T7/0004 , H01J37/28 , H01J2237/202 , H01J2237/221 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817
摘要： A method of detecting defects in a patterned substrate includes positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle-beam optical column having a field of view (FOV) with a substantially uniform resolution over the FOV; operating the charged-particle-beam optical column to acquire images of a region of the patterned substrate lying within the FOV by scanning the charged-particle beam over the patterned substrate; and comparing the acquired images to a reference to identify defects in the patterned substrate.
摘要翻译：检测图案化衬底中的缺陷的方法包括相对于图案化衬底定位带电粒子束光学柱，具有在FOV上具有基本均匀分辨率的视场（FOV）的带电粒子束光学柱; 操作带电粒子束光学柱以通过在图案化衬底上扫描带电粒子束来获取位于FOV内的图案化衬底的区域的图像; 以及将获取的图像与参考值进行比较，以识别图案化衬底中的缺陷。

7. 发明授权

US5616921A Self-masking FIB milling 失效
标题翻译：自屏蔽FIB铣削
公开(公告)号：US5616921A
公开(公告)日：1997-04-01
申请号：US268790
申请日：1994-06-30
申请人： Christopher G. Talbot , Douglas Masnaghetti , Hongyu Ximen
发明人： Christopher G. Talbot , Douglas Masnaghetti , Hongyu Ximen
IPC分类号： B23K15/02 , C23C14/04 , C23C14/22 , G01Q30/02 , H01J37/147 , H01J37/304 , H01J37/305 , H01L21/027 , H01L21/302 , H01L21/3065 , H01J37/30
CPC分类号： H01J37/304 , B23K15/02 , C23C14/04 , C23C14/221 , H01J37/3056 , H01J2237/31732 , H01J2237/31742
摘要： Preferential etching during FIB milling can result in a rough, pitted surface and make IC probing/repair operations difficult. Preferential etching is compensated by acquiring a contrast image of the partially-milled sample, preparing mask image data from the contrast image, and controlling further FIB milling using the mask image data. For example, a window is to be milled in a top-layer power plane of an IC to expose a hidden layer. The window is partially milled. A FIB image is acquired and thresholded to produce mask image data. The mask image data distinguish areas where the power plane has been milled through from those where it has not been milled through. Milling is resumed using the mask image data to control effective FIB milling current. The mask image data are updated periodically as the window is milled.
摘要翻译： FIB铣削时的优先蚀刻可能导致粗糙的凹坑表面，使IC探测/维修操作变得困难。通过获取部分研磨的样品的对比度图像，从对比图像准备掩模图像数据以及使用掩模图像数据来控制进一步的FIB研磨来补偿优先蚀刻。例如，要在IC的顶层电源平面中铣削窗口以暴露隐藏层。窗户部分铣削。获取FIB图像并将其阈值化以产生掩模图像数据。掩模图像数据区分电力平面已经被研磨的区域与未被研磨过的那些区域。使用掩模图像数据恢复铣削以控制有效的FIB铣削电流。当窗口被铣削时，掩模图像数据被周期性地更新。

8. 发明申请

US20180029127A1 CONTROLLING AN INTENSITY PROFILE OF AN ENERGY BEAM IN ADDITIVE MANUFACTURING BASED ON TRAVEL DIRECTION OR VELOCITY 有权
公开(公告)号：US20180029127A1
公开(公告)日：2018-02-01
申请号：US15655298
申请日：2017-07-20
申请人： Hou T. Ng , Ron Naftali , Christopher G. Talbot
发明人： Hou T. Ng , Ron Naftali , Christopher G. Talbot
IPC分类号： B22F3/105 , B29C64/135 , H04N5/74 , B29C64/171 , B33Y50/02 , G02B26/08
摘要： An additive manufacturing apparatus includes a platform, a dispenser to dispense layers of feed material on the platform, and a fusing system including an energy source to generate an energy beam having an adjustable intensity profile, an actuator to cause the energy beam to traverse across an outermost layer of feed material, and a controller coupled to the actuator and the energy source. The controller is configured to cause the energy source to adjust the intensity profile of the energy beam on the outermost layer of feed material based on a traversal velocity and/or a traversal direction of the light beam across the outermost layer of feed material.

9. 发明申请

US20180029126A1 CONTROLLING AN INTENSITY PROFILE OF AN ENERGY BEAM WITH A DEFORMABLE MIRROR IN ADDITIVE MANUFACTURING 审中-公开
公开(公告)号：US20180029126A1
公开(公告)日：2018-02-01
申请号：US15655229
申请日：2017-07-20
申请人： Hou T. Ng , Ron Naftali , Christopher G. Talbot
发明人： Hou T. Ng , Ron Naftali , Christopher G. Talbot
IPC分类号： B22F3/105 , B29C64/135 , H04N5/74 , B29C64/171 , B33Y50/02 , G02B26/08
CPC分类号： B22F3/1055 , B22F2003/1056 , B22F2003/1057 , B22F2999/00 , B29C64/135 , B29C64/153 , B29C64/171 , B29C64/245 , B33Y10/00 , B33Y30/00 , B33Y50/02 , G02B26/08 , G02B26/0825 , H04N5/7458 , Y02P10/295 , B22F2202/11 , B22F2203/03 , B22F2203/11
摘要： An additive manufacturing apparatus includes a platform, a dispenser to dispense layers of feed material on the platform, and a fusing system to direct an energy beam to fuse at least a portion of the outermost layer of feed material. The fusing system includes an energy source to emit the energy beam, a deformable mirror to receive the energy beam and reflect the energy beam, wherein a shape of the deformable mirror defines at least in part an intensity profile of the energy beam on the outermost layer of feed material, an actuator coupled to the deformable mirror, and a controller coupled to the actuator and configured to cause the actuator to deform the shape of the deformable mirror to adjust the intensity profile of the energy beam on the outermost layer of feed material in accordance to a desired profile.

10. 发明授权

US5357116A Focused ion beam processing with charge control 失效
标题翻译：聚焦离子束处理与充电控制
公开(公告)号：US5357116A
公开(公告)日：1994-10-18
申请号：US980371
申请日：1992-11-23
申请人： Christopher G. Talbot , Thomas M. Trexler
发明人： Christopher G. Talbot , Thomas M. Trexler
IPC分类号： G03F1/74 , G03F7/09 , G03F7/20 , H01L21/027 , H01L21/302 , H01L21/3065 , H01J37/30
CPC分类号： G03F1/74 , G03F7/093 , G03F7/2065
摘要： Focused ion beam (FIB) systems are used for IC mask or reticle repair and imaging and other applications. The impinging ions can cause an undesirable charge build-up on the specimen. Prior to beginning repair operations in a FIB system, a fluid containing a conductive material such as dimethyl ammonium salt is applied to the reticle, mask or device and allowed to dry, leaving a thin conductive layer on the specimen. A leakage path is preferably provided from the thin conductive layer to ground, to prevent charge buildup on the specimen. The FIB is used to cut through the conductive layer before commencing FIB deposition, to assure proper bonding of the deposited material. The technique also has application with electron beam imaging systems.
摘要翻译：聚焦离子束（FIB）系统用于IC掩模或掩模版修复和成像等应用。撞击的离子会导致样品上不希望的电荷积聚。在FIB系统开始修复操作之前，将含有导电材料如二甲基铵盐的流体施加到掩模版，掩模或器件上，并使其干燥，在样品上留下薄的导电层。优选地，从薄导电层到地面提供泄漏路径，以防止样品上的电荷累积。在开始FIB沉积之前，FIB用于切割导电层，以确保沉积材料的正确结合。该技术还具有电子束成像系统的应用。

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